• 제목/요약/키워드: point contact spectroscopy

검색결과 29건 처리시간 0.026초

Characterization of a LSCF/GDC Cathode Composite in Solid Oxide Fuel Cells Using Impedance Spectroscopy

  • Hwang, Jin-Ha;Lee, Byung-Kook
    • 한국세라믹학회지
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    • 제42권12호
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    • pp.793-799
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    • 2005
  • A composite cathode of LSCF$(La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_3)\;and\;GDC\; (Gd_2O_3-doped\;CeO_2:Ce_{0.9}Gd_{0.1}O_{1.95_})$ was characterized in terms of an electrode response, using a point contact in an Yttria-Stabilized Zirconia (YSZ) electrolyte incorporated into AC two-point impedance spectroscopy. The point-contacted configuration amplifies the responses occurring near the YSZ/cathode interface through the aligned point contact on the planar LSCF/GDC electrode. The point contact interface increases the bulk resistance allowing the estimation of the point contact geometry and resolving the electrode-related responses. The resultant impedance spectra are analyzed through an equivalent circuit model constructed by resistors and constant phase elements. The bulk responses can be resolved from the electrode-related portions in terms of spreading resistance. The electrode-related polarizations are measured in terms of temperature and oxygen partial pressure. The modified impedance spectroscopy is discussed in terms of methodology and analytical aspects, toward resolving the electrode-polarization issues in solid oxide fuel cells.

Energy Gap of $MgB_2$ from Point Contact Spectroscopy

  • Lee, Suyoun;Yonuk Chong;S. H. Moon;Lee, H. N.;Kim, H. G.
    • Progress in Superconductivity
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    • 제3권2호
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    • pp.146-150
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    • 2002
  • We performed the point contact spectroscopy on newly discovered superconductor $MgB_2$ thin films with Au tip. In the point contact spectroscopy of the metallic Sharvin limit, the differential conductance below the gap is twice as that above the gap by virtue of Andreev Reflection. After some surface cleaning processes of sample preparation such as ion-milling and wet etching, the obtained dI/dV versus voltage curves are relatively well fitted to the Blonder-Tinkham-Klapwijk (BTK) formalism. Gaps determined by this technique were distributed in the range of 3meV~ 8meV with the BCS value of 5.9meV in the weak coupling limit. We attribute these discrepancies to the symmetry of the gap parameter and the degradation of the surface of the sample. We also present the temperature dependence of the conductance vs voltage curve and thereby the temperature dependence of the gap.

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Au-Te 과 n-GaAs 의 접촉저항 특성 (The characteristics of the specific contact resistance of Au-Te to n-GaAs)

  • 정성훈;송복식;문동찬;김선태
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1995년도 추계학술대회 논문집
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    • pp.63-66
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    • 1995
  • The ohmic characterization of Au/Te/Au/n-GaAs structure is investigated by the application of x-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, the specific contact resistance and I-V measurement. Increasing the annealing temperature, the results of XRD measurement show the sharpening of the Au-Ga peak and the increasing of the intensity of Au peak due to the crystallization. At 400$^{\circ}C$, which is the ohmic onset point, Ga$_2$Te$_3$peak gets evident and GaAs regrowth peak appears for the samples annealed at 500$^{\circ}C$. The variation of shottky contact to ohmic contact is confirmed by the I-V curve transition. The specific contact resistance of 3.8x10$\^$-5/$\Omega$-$\textrm{cm}^2$ is obtained for the sample annealed at 500$^{\circ}C$ and above 600$^{\circ}C$ the specific contact resistance increased due to the decomposition of GaAs substrate.

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Label-free and sensitive detection of purine catabolites in complex solutions by surface-enhanced raman spectroscopy

  • Davaa-Ochir, Batmend;Ansah, Iris Baffour;Park, Sung Gyu;Kim, Dong-Ho
    • 한국표면공학회지
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    • 제55권6호
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    • pp.342-352
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    • 2022
  • Purine catabolite screening enables reliable diagnosis of certain diseases. In this regard, the development of a facile detection strategy with high sensitivity and selectivity is demanded for point-of-care applications. In this work, the simultaneous detection of uric acid (UA), xanthine (XA), and hypoxanthine (HX) was carried out as model purine catabolites by surface-enhanced Raman Spectroscopy (SERS). The detection assay was conducted by employing high-aspect ratio Au nanopillar substrates coupled with in-situ Au electrodeposition on the substrates. The additional modification of the Au nanopillar substrates via electrodeposition was found to be an effective method to encapsulate molecules in solution into nanogaps of growing Au films that increase metal-molecule contact and improve substrate's sensitivity and selectivity. In complex solutions, the approach facilitated ternary identification of UA, XA, and HX down to concentration limits of 4.33 𝜇M, 0.71 𝜇M, and 0.22 𝜇M, respectively, which are comparable to their existing levels in normal human physiology. These results demonstrate that the proposed platform is reliable for practical point-of-care analysis of biofluids where solution matrix effects greatly reduce selectivity and sensitivity for rapid on-site disease diagnosis.

2-메타크릴로일옥시에틸 이소시아네이트에 의한 삼나무재의 화학처리 (Chemical Modification of Japanese Cedar with 2-Methacryloyloxyethyl Isocyanate)

  • 한규성;세토야마 코우이치
    • Journal of the Korean Wood Science and Technology
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    • 제28권1호
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    • pp.36-41
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    • 2000
  • 목재는 2-메타크릴로일옥시에틸 이소시아네이트(MOI)와 $50-60^{\circ}C$에서 촉매존재하에서 매우 쉽게 반응하였다. 적외선 분광분석을 통하여, 목재가 MOI와 우레탄결합($1715cm^{-1}$)를 형성하고 있을 뿐만 아니라, 올레핀구조의 탄소간 이중결합 ($1635cm^{-1}$)이 존재하고 있음이 밝혀졌다. 도입된 메타크릴산기는 다른 비닐모노머와의 그래프트공중합시 반응시점으로 작용할 것이다. 또한 MOI처리목재는, MOI와의 반응에 의해 친수성이던 목재의 표면이 소수화되어 접촉각이 증대되는 결과를 낳았다. X선광전자분광분석(XPS)의 결과, 목재의 표면부위의 대부분은 MOI에 의해 개질되었음을 밝혀졌다.

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Antibacterial property and characterization of CuSn thin films deposited by RF magnetron co-sputtering method

  • 강유진;박주연;김동우;김학준;강용철
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.360.2-360.2
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    • 2016
  • CuSn thin films were fabricated by rf magnetron co-sputtering method on the Si(100) substrate for evaluation of the antibacterial effect. The co-sputtering process was performed with different rf powers and sputtering times to regulate the thickness of the films and relative atomic ratio of Cu to Sn. The physicochemical properties of the CuSn thin films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectroscopy (XAES), Optical microscope (OM), 4-point probe, and antibacterial test. An antibacterial test was conducted with Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) as changing contact times between CuSn fillms and bacteria suspension. We compared to the crystalline structures of films before sterilization and after sterilization by XRD measurement. The changes of oxidation states of Cu and Sn and the chemical environment of films before and after antibacterial test were investigated with high resolution XPS spectra in the regions of Cu 2p, Cu LMM, and Sn 3d. After antibacterial test, the morphology of the films was checked with an OM images. The electrical properties of the CuSn films such as surface resistance and conductivity were measured by using 4-point probe.

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GaN 위에 electron beam evaporator로 증착시킨 ITO contactd의 구조적 특성 및 전기적 특성 평가

  • 김동우;성연준;이재원;박용조;김태일;김현수;염근영
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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    • pp.33-33
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    • 2000
  • 일반적으로 GaN-based light emitting diodes(LEDs)는 Top layer위에 금속박막으로 contact을 형성하고 있으며 광소자 구성에 있어 빛은 이러한 금속 contact을 통과할 수 없다. 그러나 만약 이러한 contact이 투명전도막으로 구성될 수 있다면 보다 효율적인 광소자의 구성이 기대되어진다. 특히 GaN photodetector, GaN-based LEDs, GaN vertical cavity surface emitting lasers(VCSELs)등의 소자형성에 있어 투명전도막 contact은 매우 중요하며 그 응용에 앞서 기본적인 구조적, 전기적, 광학적 특성에 대한 연구가 반드시 선행되어져야 한다. 따라서 본 실험에서는 이러한 투명전도막으로써 Indium Tin Oxide(ITO)를 사용하였으며 박막형태의 contact으로 제조하여 n-GaN, p-GaN와 corning glass위에 e-beam evaporation법로써 제조하였다. 또한 각 n-, p-type과 corning glass위에 증착된 ITO박막의 구조적 특성을 분석하기 위하여 x-ray diffractometry(XRD)와 Auger electron spectroscopy(AES)등을 사용하였으며 전기적 특성을 측정하기 위하여 four point probe를 사용하였고 그들의 I-V 곡선을 측정하였다. 또한 UV spectrometry를 사용하여 그들의 광학적 특성을 측정하고자 하였다. ITO 박막의 제조에 있어 기판은 초음파 유기세정 후 HCl과 H2O2(1:1)의 혼합용액을 사용하여 GaO2를 제거하고자 하였으며 이후 초순수로 세척하여 사용하였다. 초기 진공도는 3$\times$10-5 Torr이하였으며 기판온도 50$0^{\circ}C$에서 0.6 /s의 증착속도로 약 2000 증착하였다. 이렇게 제조된 ITO 박막은 5$\times$10-5 Torr이하의 진공분위기에서 $600^{\circ}C$로 열처리를 실시하였으며 열처리 시간의 변화에 따른 그들의 전기적, 구조적, 광학적 특성을 측정하였다. 열처리 과정을 통한 ITO박막은 투과도는 420nm의 영역에서 80%이상을 나타내었으며 이때의 면저항은 약 50ohm/ 이었다. 또한 I-V 곡선 측정에 의한 contact특성의 측정결과 열처리 전의 ITO contact은 n-GaN와 n-GaN에 대해 각각 ohmic과 schottky contact의 일반적인 contact 특성을 나타내었다. 그러나 이러한 contact 특성은 열처리 시간의 변화에 따라 변화하는 것을 확인할 수 있었다.

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