• 한국신재생에너지학회:학술대회논문집
• /
• 2011.05a
• /
• pp.104.1-104.1
• /
• 2011

가볍고, 유연성(flexibility)을 갖는 박막(thin film)형 플랙서블 태양전지(flexible solar cell)는 상황에 따른 형태의 변형이 가능하여, 휴대가 간편하고, 기존 혹은 신규 구조물의 지붕(rooftop)등에 설치가 용이하여, 차세대 성장 동력 분야에서 각광받고 있다. 그러나 아직까지 플랙서블 태양전지는 제작시 열에 의한 기판의 변형, 기판 이송시 너울 현상, 대면적 패터닝(patterning) 기술 등 많은 어려움 등으로 웨이퍼나 글라스 기판에 제조된 태양전지 대비 낮은 광전환 효율을 갖는다. 따라서 본 연구에서는 플랙서플 태양전지 성능개선을 위해 3.5세대급 ($450{\times}450cm^2$) 스퍼터(sputter), 금속유기 화학기상장치 (MOCVD), 플라즈마 화학기상장치 (PECVD), 레이저 가공장치 (Laser scriber)를 이용하여 a-Si:H/a-SiGe:H 이중접합(tandem)을 갖는 태양전지를 제작하였고, 광 변환효율 특성을 평가하였다. 전도도(conductivity), 라만(Raman)분광 및 UV/Visible 분광 분석을 통하여 박막의 전기적, 구조적, 광학적 물성을 평가하여 단위박막의 물성을 최적화 했다. 또한 제작된 태양전지는 쏠라 시뮬레이터 (Solar Simulator)를 이용하여 성능 평가를 수행하였고, 상/하부층의 전류 정합 (current matching)을 위해 외부양자효율 (external quantum efficiency) 분석을 수행하였다. 제작된 이중접합 접이식 태양전지로 소면적($0.25cm^2$)에서 8.7%, 대면적($360cm^2$ 이상) 8.0% 이상의 효율을 확보하였으며, 성능 개선을 위해 대면적 패턴 기술 향상 및 공정 기술 개선을 수행 중이다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.1261-1262
• /
• 2008

Laser-based crystallization techniques are ideally-suited for forming high-quality crystalline Si films on active-matrix display backplanes, because the highly-localized energy deposition allows for transformation of the as-deposited a-Si without damaging high-temperature-intolerant glass and plastic substrates. However, certain significant and non-trivial attributes must be satisfied for a particular method and implementation to be considered manufacturing-worthy. The crystallization process step must yield a Si microstructure that permits fabrication of thin-film transistors with sufficient uniformity and performance for the intended application and, the realization and implementation of the method must meet specific requirements of viability, robustness and economy in order to be accepted in mass production environments. In recent years, Low Temperature Polycrystalline Silicon (LTPS) has demonstrated its advantages through successful implementation in the application spaces that include highly-integrated active-matrix liquid-crystal displays (AMLCDs), cost competitive AMLCDs, and most recently, active-matrix organic light-emitting diode displays (AMOLEDs). In the mobile display market segment, LTPS continues to gain market share, as consumers demand mobile devices with higher display performance, longer battery life and reduced form factor. LTPS-based mobile displays have clearly demonstrated significant advantages in this regard. While the benefits of LTPS for mobile phones are well recognized, other mobile electronic applications such as portable multimedia players, tablet computers, ultra-mobile personal computers and notebook computers also stand to benefit from the performance and potential cost advantages offered by LTPS. Recently, significant efforts have been made to enable robust and cost-effective LTPS backplane manufacturing for AMOLED displays. The majority of the technical focus has been placed on ensuring the formation of extremely uniform poly-Si films. Although current commercially available AMOLED displays are aimed primarily at mobile applications, it is expected that continued development of the technology will soon lead to larger display sizes. Since LTPS backplanes are essentially required for AMOLED displays, LTPS manufacturing technology must be ready to scale the high degree of uniformity beyond the small and medium displays sizes. It is imperative for the manufacturers of LTPS crystallization equipment to ensure that the widespread adoption of the technology is not hindered by limitations of performance, uniformity or display size. In our presentation, we plan to present the state of the art in light sources and beam delivery systems used in high-volume manufacturing laser crystallization equipment. We will show that excimer-laser-based crystallization technologies are currently meeting the stringent requirements of AMOLED display fabrication, and are well positioned to meet the future demands for manufacturing these displays as well.

• Korean Journal of Weed Science
• /
• v.30 no.3
• /
• pp.215-224
• /
• 2010

A greenhouse experiment was conducted to determine the effects of medium components and shade treatment on the growth, contents of total phenolics and flavonoids, and 1,1-diphenyl-2-picryl hydrazyl (DPPH) radical scavenging activity of Youngia sonchifolia. Substrates combined with coco peat and perlite (ratio 70:30 or 50:50, v/v) showed higher plant length, leaf area, and fresh weight than single substrate (P<0.05). Shade treatment also significantly reduced plant height, root length, leaf areas, and fresh weight (P<0.05) with increasing of the degree. Shading treatment, however, increased contents of total phenolics [mg ferulic acid equivalents $kg^{-1}$ dry wt.] and total flavonoids [mg naringin equivalents $kg^{-1}$ dry wt.] in shoot parts of Y. sonchifoli, showing 110.2 to 119.2 and 128.3 to 146.7 mg $kg^{-1}$, respectively. The antioxidant potential of the methanol extracts from the plants dose-dependently increased DPPH free radical scavenging activity, and the activity was higher in shoots (50.2 to 80.8%) than in roots (47.7 to 49.8%), and in shading treatment than in no shade.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.14 no.5
• /
• pp.887-892
• /
• 2019

In this study, after 20nm-thick $SiO_2$ thin film was deposited by PECVD method on the PES substrate, which is known to have the highest heat resistance among plastic substrates, as a buffer layer, ITZO thin films were deposited by RF magnetron sputtering method to investigate the electrical and optical properties according to the working pressure. The ITZO thin film deposited at the working pressure of 3mTorr showed the best electrical properties with a resistivity of $8.02{\times}10^{-4}{\Omega}-cm$ and a sheet resistance of $50.13{\Omega}/sq.$. The average transmittance in the visible region (400-800nm) of all ITZO films was over 80% regardless of working pressure. The Figure of merit showed the largest value of $23.90{\times}10^{-4}{\Omega}^{-1}$ in the ITZO thin film deposited at 3mTorr. This study found that ITZO thin films are very promising materials to replace ITO thin films in next-generation flexible display devices.

• Journal of Life Science
• /
• v.31 no.10
• /
• pp.954-959
• /
• 2021

Apoptosis is an important mechanism that regulates cellular populations to maintain homeostasis, and the caspases, a family of cysteine proteases, are key mediators of the apoptosis pathway. Caspase-8 is an initiator caspase of the extrinsic apoptotic pathway, which is initiated by extracellular stimuli. Caspase-8 have two conserved domains, N-terminal tandem death effector domains (DED) and C-terminal two catalytic domain, which are important for this extrinsic apoptosis pathway. In extrinsic apoptosis pathway, death receptors which members of TNF superfamily are activated by binding of death receptor specific ligands from cell outside. After the activated death receptors recruit adaptor protein Fas-associated death domain protein (FADD), death domains (DD) of death receptor and FADD bind to each other and FADD combined with death receptor recruits procaspase-8, a precursor form of caspase-8. The DED of FADD and procaspase-8 bind to one another and FADD-bound procaspase-8 is activated by cleavage of the prodomain. This death receptor-FADD-caspase-8 complex called death inducing signaling complex (DISC). Cellular FLICE-inhibitory proteins (c-FLIPs) regulate caspase-8 activation by acting both anti- and pro-apoptotically, and caspase-8 activation initiates the activation of executioner caspases such as caspase-3. Finally activated executioner caspases complete the apoptosis by acting critically DNA degradation, nuclear condensation, plasma membrane blebbing, and the proteolysis of certain caspase substrates.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.16 no.3
• /
• pp.443-450
• /
• 2021

After selecting a PES substrate with excellent thermal stability and optical properties among plastic substrates, a SiO₂ thin film was deposited as a buffer layer to a thickness of 20nm by plasma-enhanced chemical vapor deposition to compensate for the high moisture absorption. Then, the ITZO thin film was deposited by a RF magnetron sputtering method to investigate electrical and optical properties according to RF power. The ITZO thin film deposited at 50W showed the best electrical properties such as a resistivity of 8.02×10^-4 Ω-cm and a sheet resistance of 50.13Ω/sq.. The average transmittance of the ITZO thin film in the visible light region(400-800nm) was relatively high as 80% or more when the RF power was 40 and 50W. Figure of Merits (Φ_TC and FOM) showed the largest values of 23.90×10^-4 Ω^-1 and 5883 Ω^-1cm^-1, respectively, in the ITZO thin film deposited at 50W.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.100-101
• /
• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• Horticultural Science & Technology
• /
• v.31 no.1
• /
• pp.65-71
• /
• 2013

This research was conducted to evaluate the influence of $NO_3{^-}:NH_4{^+}$ ratios in fertilizer solution on the vegetative growth and fruit yield of hot pepper (Capsicum annuum L.) through pot cultivation. The Hoaglad's solution was modified to contain various $NO_3{^-}:NH_4{^+}$ ratios such as 100:0 (A), 73:37 (B), 50:50 (C), 27:73 (D), 0:100 (E), and no nitrogen (F). Plants were transplanted into root substrates and the modified solutions were applied as plant needed in plastic house. There were no statistical significances among the treatments from A through D in the fresh and dry weights, and number of leaves 31 days after transplanting, but elevation of $NH_4{^+}$ ratios in the solution decreased the fresh fruit weight 62 days after transplanting with statistical differences. In the results of inorganic element analysis based on the dry weight of fully expanded mature leaves, N and P contents as well as micro cations such as Fe, Mn, Zn, and Cu increased as $NH_4{^+}$ ratios were elevated 62 days after transplanting. However, those of macro cations such as K, Ca, and Mg resulted in decreasing tendency. The elevation of $NH_4{^+}$ ratios in fertilizer solution resulted in the increase of EC and total N concentrations ($NO_3{^-}+NH_4{^+}$), but this decreased the pH as well as Ca and Mg concentrations in soil solution 62 days after transplanting. The K concentration in soil solution was the highest in the treatments of C and followed by D, B, E, and A. The above results indicate that the proper $NO_3{^-}:NH_4{^+}$ ratio in the nutrient solution is 73:27 (B) or 100:0 (A) and the B solution is proper for the vegetative growth and that of A is proper for reproductive growth stage.