• Korean Chemical Engineering Research
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• v.44 no.5
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• pp.528-534
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• 2006

The purpose of this paper is to investigate the optimal operating condition for the hydrogen production by biogas reforming using the plasmatron induced thermal plasma. The component ratio of biogas($CH_4/CO_2$) produced by anaerobic digestion reactor were 1.03, 1.28, 2.12, respectively. And the reforming experiment was performed. To improve hydrogen production and methane conversion rates, parametric screening studies were conducted, in which there are the variations of biogas flow ratio(biogas/TFR: total flow rate), vapor flow ratio($H_2O/TFR$: total flow rate) and input power. When the variations of biogas flow ratio, vapor flow ratio and input power were 0.32~0.37, 0.36~0.42, and 8 kW, respectively, the methance conversion reached its optimal operating condition, or 81.3~89.6%. Under the condition mentioned above, the wet basis concentrations of the synthetic gas were H2 27.11~40.23%, CO 14.31~18.61%. The hydrogen yield and the conversion rate of energy were 40.6~61%, 30.5~54.4%, respectively, the ratio of hydrogen to carbon monoxide($H_2/CO$) was 1.89~2.16.

• Journal of Korean Society of Environmental Engineers
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• v.28 no.1
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• pp.48-53
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• 2006

The purpose of this paper is to investigate the optimal condition of the SynGas production by reforming of propane using plasmatron. Plasma was generated by air and arc discharge. The effects of applied steam, $CO_2$ or Ni-catalyst on propane conversion, yield of hydrogen and $H_2/CO$ ratio as well as correlation of syngas were studied. When the variations of $O_2/C_3H_8$ flow ratio, $H_2O/C_3H_8$ flow ratio and $CO_2/C_3H_8$ flow ratio were $0.94{\sim}1.48,\;4.3{\sim}10\;and\;0.8{\sim}3.05$ respectively, Under the condition mentioned above, result of $H_2O/C_3H_8$ flow ratio was maximum $H_2$ concentration, or $28.2{\sim}31.6%$, and result of $H_2O/C_3H_8$ flow ratio with catalyst was minimum CO concentration or $6.6{\sim}7.1%$ and the ratio of hydrogen to carbon monoxide($H_2/CO$) were $3.89{\sim}4.86$.

• Transactions of the Korean hydrogen and new energy society
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• v.17 no.4
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• pp.362-370
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• 2006

The purpose of this paper was to investigate the reforming characteristics and optimum operating condition of the plasmatron assisted $CH_4$ reforming reaction for the hydrogen-rich gas production. Also, in order to increase the hydrogen production and the methane conversion rate, parametric screening studies were conducted, in which there were the variations of the $CH_4$ flow ratio, $CO_2$ flow ratio, vapor flow ratio, mixing flow ratio and catalyst addition in reactor. High temperature plasma flame was generated by air and arc discharge. The air flow rate and input electric power were fixed 5.1 l/min and 6.4 kW, respectively. When the $CH_4$ flow ratio was 38.5%, the production of hydrogen was maximized and optimal methane conversion rate was 99.2%. Under these optimal conditions, the following synthesis gas concentrations were determined: $H_2$, 45.4%; CO, 6.9%; $CO_2$, 1.5%; and $C_2H_2$, 1.1%. The $H_2/CO$ ratio was 6.6, hydrogen yield was 78.8% and energy conversion rate was 63.6%.

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.2918-2922
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• 2007

This is a report of a feasibility study on the reduction of harmful substances such as particulate matters and nitric oxides emitted from diesel engines by using a plasma reforming system that can generate hydrogen-rich gas. In this paper, an exhaust reduction mechanism of the non-thermal plasma reaction was investigated to perform its efficiency and characteristics on producing hydrogen-rich gas. Firstly, we explain briefly the chemistry of hydrocarbon reforming. The experimental system is showed in the second part. Finally, we demonstrate the feasibility of producing hydrogen using non-thermal plasma. The experimental results are focused on the influence of the different operating parameters (air ratio, inlet flow rates, voltage) on the reformer efficiency and the composition of the produced gas.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.207-207
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• 2010

Both ZnO and GaN have excellent physical properties in optoelectronic devices such as blue light emitting diode (LED), blue laser diode (LD), and ultra-violet (UV) detector. The ZnO/GaN heterostructure, which has a potential to achieve the cost efficient LED technology, has been fabricated by using radio frequency (RF) sputtering, pyrolysis, metal organic chemical vapor deposition (MOCVD), direct current (DC) arc plasmatron, and pulsed laser deposition (PLD) methods. Among them, the PLD system has a benefit to control the composition ratio of the grown film from the mixture target. A 500-nm-thick ZnO film was grown by PLD technique on c-plane GaN/sapphire substrates. The post annealing process was executed at some varied temperature between from $300^{\circ}C$ to $900^{\circ}C$. The morphology and crystal structural properties obtained by using atomic force microscope (AFM) and x-ray diffraction (XRD) showed that the crystal quality of ZnO thin films can be improved as increasing the annealing temperature. We will discuss the post-treatment effect on film quality (uniformity and reliability) of ZnO/GaN heterostructures.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.552-552
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• 2013

In our study we consider Al2O3 ceramic substrates for Plasma Surface Treatments in order to improve deposited diamond surface and increase diamond deposition rate by applying DBD (Dielectric Barrier Dischrge) system. Because Plasma Surface Treatments was used as a modification method of material surface properties like surface free energy, wettability, and adhesion. By applying Plasma Surface Treatments diamond films are deposited on the Al2O3 ceramic substrates. DC Arc Plasmatron with mathane and hydrogen gases is used. Deposited diamond films are investigated by SEM (Scanning Electron Microscopy), AFM (Atomic Force Microscopy) and XRD (X-ray Diffractometer). Then the C-H stretching of synthetic diamond films by FTIR (Fourier Transform Infrared Spectroscopy) is studied. As a result, nanocrystalline diamond films were identified by using SEM and diamond properties in XRD peaks at (111, $43.8{\Box}$, (220, $75.3{\Box}$ and (311, $90.4{\Box}$ were shown. Absorption peaks in FTIR spectrum, caused by CHx sp3 bond stretching of CVD diamond films, were identified as well. Finally, we improved such parameters as depostion rate ($2.3{\mu}m$/h), diamond surface uniformity, and impurities level by applying Plasma Surface Treatments. These experimental results show the importance of Plasma Surface Treatments for diamond deposition by a plasma source.