• Journal of the Korean Ceramic Society
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• v.41 no.3
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• pp.197-201
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• 2004

SiO$_2$ and SiON thick films were deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique on silicon wafer (100) using SiH$_4$ and $N_2$O as precursor gases. In this work, the influence of rf power, and rf bias power on the optical and physical properties of SiO$_2$ and SiON thick films is presented. The refractive index decreases with increasing rf power, and rf bias power. The refractive index of the films varied from 1.4493 to 1.4952 at wavelength at 1552 nm, with increasing rf power, the nitrogen content decreases while the oxygen content increases, in a manner that the O/N ratio increases approximately linearly.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.12 no.4
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• pp.123-130
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• 2013

Zirconia is well known in industrial applications for its mechanical characteristics. DLC (diamond-like carbon) have high elastic modulus, high electric resistivity, high dielectric constant, high wear resistance, low friction coefficient, bio compatibility, chemically inert and thermally stable. Because of all these physical and chemical properties these types of coatings have become key procedure for thin coating. Friction coefficient of DLC films is already evaluated and the current work is a further advancement by calculating the fracture toughness and wear resistance of these coatings. In the present study DLC thin film coatings are developed on $ZrO_2$ alloy surface using Plasma Enhanced Chemical Vapor Deposition (PECVD) method. Vicker hardness test is employed and it was concluded that, DLC coatings increase the Vickers hardness of ceramics.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.194-200
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• 2001

In this study, the optical properties of diamond-like carbon(DLC) films, which was synthesized by 13.56 MHz rf plasma enhanced chemical vapor deposition system(PECVD), were investigated. We observed the variation of the transmittance and optical band gap with respect to deposition condition. The change of the transmittance and optical band gap of the DLC films were investigated as a function of RF power, working pressure, and additional gas. The optical band gap decreased with the increase of RF power and working pressure. We could verify the bond structures change of DLC films by observing the content of hydrogen using FT-IR spectroscopy. And the addition of hydrogen and nitrogen decreased the optical band gap by the breakage of C-H bond of DLC films during the deposition.

• Journal of Soil and Groundwater Environment
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• v.12 no.3
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• pp.29-35
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• 2007

Titanium was oxidized with oxygen plasma and calcinated with rapid thermal annealing for degradation of humic acid dissolved in water. Titania photocatalytic plate was produced by titanium surface oxidized with oxygen plasma by Plasma Enhanced Chemical Vapor Deposition (PECVD). RF-power and deposition condition is controlled under 100 W, 150 W, 300 W and 500 W. Treatment time was controlled by 5 min and 10 min. The film properties were evaluated by the X-ray Photoelectron Spectroscopy (XPS) and X-Ray Diffraction (XRD). From the experimental results, we found the optimal condition of titania film which exhibited good performance. Moreover photocatalytic capacity was about twice better than thermal spray titania film, and also as good as titania powder.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.893-896
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• 2003

Plasma polymerized para-xylene (PPpX) thin films deposited by plasma enhanced chemical vapor deposition (PECVD) were used to passivate the organic light emitting diodes (OLEDs). For OLEDs, indium tin oxide (ITO), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD), tris(8-hydroxyquinoline) aluminum $(Alq_{3})$ and aluminum (Al) were used as the anode, the hole transport layer (HTL), the emitting layer (EML) and the cathode, respectively. The OLED device with the PPpX passivation film (passivated device) showed similar electrical and optical characteristics to those of the OLED device without the PPpX passivation film (control device), indicating that the PECVD process did not degrade the performance of the OLEDs notably. The lifetime of the passivated device was two times longer than that of the control device. Passivation of OLEDs with PPpX films also suppressed the growth of dark spots. The density and size of dark spots of the passivated device were much smaller than those of the control device.

• Transactions on Electrical and Electronic Materials
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• v.17 no.3
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• pp.159-162
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• 2016

We studied an electrolyte-dielectric metal (EDM) device based on a Si₃N₄ layer-coated anodic aluminium oxide (AAO) template for chemical sensors. The AAO templates were fabricated using a two-step anodization procedure at 0℃ and 70 V in 0.3 M oxalic acid, after which the Si₃N₄ was deposited on them using plasma enhanced chemical vapor deposition (PECVD). The average pore size was approximately 106 nm and the depth of the AAO templates was 24.6 nm to 86.5 nm. The Si₃N₄ layer-coated AAO is more stable than a single AAO template.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.334.2-334.2
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• 2016

Silicon nitride (SiNx:H) films are generally used as passivation layer on solar cell and they are usually made by plasma enhanced chemical vapor deposition (PECVD). In this study, we investigated the properties of silicon nitride (SiNx:H) films made by PECVD. Effects of mixture ratio of process gases with silane (SiH4) and ammonia (NH3) on the passivation qualities of silicon nitride film are evaluated. Passivation properties of SiNx:H are focused by making antireflection properties identical with thickness and refractive index controlled. The absorption coefficient of each film was evaluated by spectrometric ellipsometery and the minority carrier lifetimes were evaluated by quasi-steady-state photo-conductance (QSSPC) measurement. The optical properties were obtained by UV-visible spectrophotometer. The interface properties were measured by capacitance-voltage (C-V) measurement and the film components were identified by Fourier transform infrared spectroscopy (FT-IR) and Rutherford backscattering spectroscopy detection (RBS) - elastic recoil detection (ERD).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.292-292
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• 2009

OLED(Organic Light Emitting Device)는 LCD(Liquid Crystal Display)의 뒤를 잇는 차세대 디스플레이의 선두주자로서 자체발광형이기 때문에 백라이트 등의 보조광원이 불필요하며, 구동전압이 낮고 넓은 시야각과 빠른 응답속도 등의 특징을 가지고 있다. 또한 플렉서블 기판을 사용할 수 있어 차세대 디스플레이인 플렉서블 디스플레이에 적합하다. 플렉서블한 디스플레이를 만들기 위해서 플라스틱 기판에 OLED 물질을 사용하여 기존에 무겁고, 깨지기 쉬우며, 변형이 불가능한 유리로 만든 소자 보다 더 가볍고 깨지지 않고 변형이 가능한 플렉서블 디스플레이를 제작 할 수 있다. 그러나 플라스틱 기판은 매우 큰 투습율을 가지고 있어 OLED소자에 적용시키면 공기 중의 수분이나 산소와 접촉이 많아져 쉽게 산화되어 소자의 효율 및 수명이 짧아진다. 또한 OLED에 사용되는 유기물도 산소나 수분에 의해 특성이 급격히 저하되기 때문에 산소 및 수분의 차단은 필수적이다. 이러한 단점을 최소화하기 위해서 PECVD(Plasma Enhanced Chemical Vapor Deposition)로 만든 SiON(Silicon Oxynitride) 박막을 차단막(Passivation layer)으로 사용하였다. PECVD를 이용하여 SiON 박막을 증착시킬 때 RF Power, 공정압력, Distance의 변화에 따른 박막의 결정화도, 수분투습도, 광투과도 등의 특성을 FT-IR(Fourier Transform Infrared Spectroscopy), Ellipsometer, UV-visible Spectrophotometer, MOCON를 이용하여 SiON 박막의 특성을 고찰하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.367-372
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• 2002

The vertically well-aligned carbon nanotubes(CNTs) were successfully grown on Ni coated silicon wafer substrate by DC bias-assisted PECVD(Plasma Enhanced Chemical Vapor Deposition). As a catalyst, Ni thin film of thickness ranging from 15~30nm was prepared by electron beam evaporator method. In order to find the optimum growth condition, the type of gas mixture such as $C_2H_2-NH_3$ was systematically investigated by adjusting the gas mixing ratio at $570^{\circ}C$ under 0.4Torr. The diameter of the grown CNTs was 40~200nm and the diameter of the CNTs increased with increasing the Ni particles size. TEM images clearly showed carbon nanotubes to be multiwalled. The measured turn-on field was $3.9V/\mu\textrm{m}$ and an emission current of $1.4{\times}10^4A/\textrm{cm}^2$ was $7V/\mu\textrm{m}$. The CNTs grown by bias-assisted PECVD was able to demonstrate high quality in terms of vertical alignment, crystallization of graphite and the processing technique at low temperature of $570^{\circ}C$ and this can be applied for the emitter tip of FEDs.

• Transactions on Electrical and Electronic Materials
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• v.5 no.1
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• pp.15-18
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• 2004

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of a-C:H thin film by plasma enhanced chemical vapor deposition (PECVD) system for 30 sec under 30W rf power at a gas pressure of 1.4＊10$\^$-1/ torr. A high pretilt angle of about 5 by ion beam exposure on the a-C:H thin film surface was measured. A good LC alignment by the ion beam alignment method on the a-C:H thin film surface was observed at annealing temperature of 250$^{\circ}C$, and the alignment defect of NLC was observed above annealing temperature of 300$^{\circ}C$. Consequently, the high LC pretilt angle and the good thermal stability of LC alignment by the ion beam alignment method on the a-C:H thin film by PECVD method as working gas at 30W rf bias condition can be achieved.