• Korean Journal of Materials Research
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• v.5 no.5
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• pp.568-574
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• 1995

We investigated the effects of B-doping on the growth mechanism of ZnO films. The B-doped ZnO films, which were widely applied for transparent conducting electrode, were deposited by plasma enhanced chemcial vapor depostion(PECVD) using diethylzinc(DEZ), No.sub 2/. and B$_{2}$H$_{6}$. The deposition conditions were a sbustrate temperature of 30$0^{\circ}C$, an rf power of 200, and a chamber pressure of 1 torr. At the given depostion condition, the growth rate of B-doped ZnO thin films was higher than that of undoped ones, but didn't change even with further increasing B$_{2}$H$_{6}$ flow rate and the interplanar distance between(0002) planes was reduced as B atoms substituted Zn sites.s.

• Journal of Korean Ophthalmic Optics Society
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• v.9 no.2
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• pp.291-299
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• 2004

DLC films were deposited using the ECR-PECVD method with the fixed deposition condition, such as ECR power, methane and hydrogen gas-flow rates and deposition time, for various substrate bias voltage. We have investigated the ion bombardment effect induced by the substrate bias voltage on films during the deposition of film. The characteristic of the films were analyzed using the FTIR, Raman, and UV/Vis spectroscopy analysis shows that the amount of dehydrogenation in films was increased with the increase of substrate bias voltage and films thickness was decreased. Raman scattering analysis shows that integrated intensity ratio(ID/IG) of the D and G peak was increased as the substrate bias voltage increased and films hardness was increased. Optical transmittances of DLC film were decreased with increasing deposition time and substrate bias voltage. From these results, it can be concluded that films deposited at this experimental have the enhanced characteristics of DLC because of the ion bombardment effect on films during the deposition of film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.241-241
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• 2009

For the Radio Frequency Integrated Passive Device (RFIPD) application, we have successfully developed and characterized high break-down voltage metal-insulator-metal (MIM) capacitors with 2,000 ${\AA}$ plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which deposited with $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $250^{\circ}C$ chamber temperature. At the PECVD process condition of gas mixing rate (0.957), working pressure (0.9 Torr), and RF power (60 W), the AFM RMS value of about 2,000 ${\AA}$ silicon nitride on the bottom metal was the lowest of 0.862 nm and break-down electric field was the highest of about 8.0 MV/cm with the capacitance density of 326.5 $pF/mm^2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.489.1-489.1
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• 2014

Plasma Enhanced Chemical Vapor Deposition (PECVD) 장치를 통하여 증착된 수소화된 질화막(SiNx:H)은 결정질 태양전지의 반사방지막과 패시베이션 층으로 널리 사용되고 있다. 본 연구에서는 PECVD 장치내에 플라즈마를 형성하는 무선주파수(Radio Frequency)를 다양하게 변화시켜 수소화된 실리콘 질화막의 경향성을 알아보고 각 무선주파수에서 최적화된 패시베이션층을 태양전지에 적용하여 그 특성들을 분석하였다. 다양한 무선주파수 범위는 고주파(High Frequency: 13.56 MHz), 저주파 (Low Frequency: 440 kHZ) 그리고 혼합주파(Dual Frequency: 13.56 MHz + 440 kHz)를 각각 이용하여 수소화된 질화막을 증착 하였으며 $156{\times}156mm$ 대면적 결정질 실리콘 태양전지를 제작하여 비교하였다.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.05a
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• pp.211-215
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• 2006

평면 광도파로 코어로 사용되는 SiON (Silicon oxynitride)과 클래딩으로 사용되는 $SiO_2$ (Silicon oxide)의 굴절률 차이가 2.5 %인 고굴절률차 평면 광도파로용 SiON 박막을 PECVD (plasma enhanced chemical vapor deposition)로 제작하였다. PECVD에 사용된 가스는 $SiH_4,\;NH_3,\;N_{2}O$이고, Si 기판의 $SiO_2$ 막은 100 nm이다. 가스의 비율에 따라 SiON 막의 굴절률은 633 nm의 파장에서 1.476에서 1.777까지 변화하였다. 코어로 사용되는 SiON의 두께는 $2.5{\mu}m$이고 클래딩과의 굴절률 차이는 2.5 %였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.200-201
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• 2008

태양전지 제작 시 반사방지막(Anti-reflection Coating)이 태양전지 효율에 미치는 영향을 알아보기 위한 실험으로 최적의 가스비를 알아보기 위하여 Plasma Enhanced Chemical Vapor Deposition(PECVD)를 이용한 Silicon nitride 증착 실험이다. SiH4 가스를 45 sccm으로 고정시킨 상태에서 NH3를 25,45,60,90,135 sccm으로 가변하여 Carrier Lifetime과 Refractive index를 측정하였다. PECVD의 조건은 기판온도 $450^{\circ}C$, Chamber 압력 1 Torr, 증착두께 $1000\AA$으로 고정하였다. 증착 후 500, 600, 700, $800^{\circ}C$로 열처리를 하고나서 Carrier Lifetime을 측정하여 열처리에 대한 효과도 알아보았다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.519-523
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• 2000

Using plasma-enhanced chemical vapor deposition (PECVD), carbon thin film as electron field emitter were fabricated. These carbon thin film were deposited on Si(100) substrate at several RF power. These film were estimated by raman spectroscopy, scanning electron microscopy, and field emission. The field electron emission property of these carbon thin film was estimated by a diode technique. As the result, we observed that the field emission properties of these films were promoted by higher RF power. These results are explained as change of surface morphology and structural properties of carbon thin film

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.68.1-68.1
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• 2007

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1320-1322
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• 2005

Microcrystalline silicon films were deposited on glass substrate by using plasma-enhanced chemical vapor deposition (PECVD) method. The crystalline volume fraction was estimated by means of Raman spectrometer with argon laser as light source. The high hydrogen dilution of silane gas was used for increase in content of crystal silicon phase.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.71-72
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• 2008

Ultralow-k 물질은 반도체 성능향상에 있어서 필요한 물질이다 [1]. 이를 위하여 본 실험은 톨루엔과 일반적인 SiO 박막을 제조하는 데 사용되어 지는 TEOS (tetraethyl orthosilicate)를 co-depo.하여 유무기 복합 박막을 PECVD (plasma enhanced chemical vapor deposition)법을 이용하여 증착하였다. 얻어진 박막은 IR과 nano-indentation과 capacitance의 측정을 통하여 측정되었다. 이를 통하여 co-depo.를 통한 유무기 복합 박막이 기존의 CVD법을 이용한 저유전 박막보다 우수한 기계적 특성을 가짐을 확인하였다.