• Ceramist
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• v.22 no.2
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• pp.170-181
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• 2019

All-solid-state batteries have received increasing attention because of their high safety aspect and high energy and power densities. However, the inferior solid-solid interfaces between solid electrolyte and active materials in electrode, which cause high interfacial resistance, reduce ion and electron transfer rate and limit battery performance. Recently, spark plasma sintering is emerging as a promising technique for fabricating solid electrolytes and composite-electrodes. Herein, this paper focuses on the overview of spark plasma sintering to fabricate solid electrolytes and composite-electrodes for all-solid-state batteries. In the end, future opportunities and challenges associated with SPS technique for all-solid-state batteries are described.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1408-1409
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• 2006

In this paper, poly methyl methacrylate thin films were deposited on a ITO glass substrate using a plasma polymerization technique. In order to investigate the influence of the plasma coupling method and plasma conditions on the plasma polymerized poly methyl methacrylate (ppMMA) thin film properties, inductively coupled (ICP) and capacitively coupled plasma (CCP) were used to generate the plasma and the plasma parameters were varied. Molecular structures of the ppMMAs were investigated using a Fourier Transform Infrared (FT-IR) spectroscopy. Dielectric constants of the ppMMA thin films were investigated using a impedance analyzer (HP4192A, LF Impedance Analyzer). Current-Voltage (I-V) characteristics of the ppMMA thin films were investigated using a source measurement unit (SMU: Keithley 2400). Relationship between the plasma coupling technique/process parameter and ppMMA thin films properties were investigated.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.12
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• pp.2179-2183
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• 2007

In this paper, to produce sheet plasma with high density for ion plating, we designed magnetic circuit of ion plating device consisting of solenoid coil and rectangular permanent magnet. And, we analyzed the effects of the magnetic field distribution using FEM (Finite Element Methode). Additionally, we made a sputtering system including ion plating technique on the basis of the design and verified the possibility of the sheet plasma application for advanced sputter system.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.29B no.1
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• pp.67-75
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• 1992

A new method of driving the PDP(Plasma Display Panel) was proposed and its characteristics were investigated. Applying high frequency non-discharge pulses to an auxiliary anode resulted an increased region of stable operation, decreased delay time and increased light intensity. It is suggested that PDP with DPM (Double Pulse Memory) drive technique improves the delay time, luminance, region of stable operation and luminous efficacy compared to PDP with PPM(Planar Pulse Memory) drive technique developed by NHK Lab. in Japan.

• Molecular & Cellular Toxicology
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• v.1 no.2
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• pp.87-91
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• 2005

Although 2D-PAGE has been widely used as the primary method for protein separation, difficulties in displaying proteins with an extreme values of isoelectric paint (pI), molecular size and hydrophobicity limit the technique. In addition, time consuming steps involving protein transfer and extraction from the gel-pieces can result in sample loss. Here, we describe a novel protein separation technique with capillary size-exclusion chromatography (CSEC) for rapid protein identification from human plasma. The method includes protein fractionation along with molecular size followed by in-solution tryptic digestion and peptide analysis through reversed phase liquid chromatography (RPLC) coupled to nanoflow electrospray-tandem mass spectrometry (ESI-MS/MS). Tryptic peptides are applied an a $100\;{\mu}m\;i.d.{\times}10mm$ length pre-column and then separated on a $75\;{\mu}m{\times}200mm$ analytical column at -100 nL/min flaw rate. Proteins were identified over the wide ranges of pI (3.7-12.3) when this technique was applied to the analysis of $1-2\;{\mu}L$ of human plasma. This gel-free system provides fast fractionation and may be considered a complementary technique to SDS-PAGE in proteomics.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.1
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• pp.91-96
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• 1987

Plasma etching can obtain less damaged etch surface than reactive ion etching. This study was performed to get anisotropic etching characteristics of Si using two step etching technique with C2CIF5 and SF6 gas mixture. The results show that the etch rate and aspect ratio of silicon was increased with increment of SF6 contents. The bulging phenomenon on trench side wall in the plasma one-step etching technique was eliminated by the two step etching technique. The anisotropy was decreased from 12(at 120m Torr) to 2.2(at 400m Torr) with increasing the chamber pressure. At the low rf power (350 watts) anisotrpy of silicon was obtained 7 lower than that of high rf power (650 watts. A:~9). In Summary we obtained anisotropic etching profiles of silicon with e 6\ulcornerm depth by using the plasma two-step etching technique.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.288-288
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• 2012

The oxidation characteristics of tungsten line pattern during the carbon-based mask layer removal process using oxygen plasmas and the reduction characteristics of the WOx layer formed on the tungsten line surface using hydrogen plasmas have been investigated for sub-50 nm patterning processes. The surface oxidation of tungsten line during the mask layer removal process could be minimized by using a low temperature ($300^{\circ}K$) plasma processing instead of a high temperature plasma processing for the removal of the carbon-based material. Using this technique, the thickness of WOx on the tungsten line could be decreased to 25% of WOx formed by the high temperature processing. The WOx layer could be also completely removed at the low temperature of $300^{\circ}K$ using a hydrogen plasma by supplying bias power to the tungsten substrate to provide an activation energy for the reduction. When this oxidation and reduction technique was applied to actual 40 nm-CD device processing, the complete removal of WOx formed on the sidewall of tungsten line could be observed.

• Journal of Electrical Engineering and Technology
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• v.6 no.6
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• pp.836-841
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• 2011

Plasma polymerized methyl methacrylate (ppMMA) thin films were deposited by plasma polymerization technique with different plasma powers and subsequently thermally treated at temperatures of 60 to $150^{\circ}C$. To find a better ppMMA preparation technique for application to organic thin film transistor (OTFT) as dielectric layer, the chemical composition, surface morphology, and electrical properties of ppMMA were investigated. The effect of ppMMA thin-film preparation conditions on the resulting thin film properties were discussed, specifically O-H site content in the pMMA, dielectric constant, leakage current density, and hysteresis.

• Journal of Mechanical Science and Technology
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• v.15 no.12
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• pp.1691-1698
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• 2001

In recent years, significant progress has been made in modeling turbulence behavior in plasma and its effect on transport. It has also been made in diagnostics for turbulence measurement; however, there is still a large gap between theoretical model and experimental measurements. Visualization of turbulence can improve the connection to theory and validation of the theoretical model. One method to visualize the flow structures in plasma is a laser Schlieren imaging technique. We have recently applied this technique and investigated the characteristics of a highly underexpanded pulsed plasma jet originating from an electrothermal capillary source. Measurements include temporally resolved laser Schlieren imaging of a precursor blast wave. Analysis on the trajectory of the precursor blast wave shows that it does not follow the scaling expected for a strong shock resulting from the instantaneous deposition of energy at a point. However, the shock velocity does scale as the square root of the deposited energy, in accordance with the point deposition approximation.

• Proceedings of the KIEE Conference
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• 2006.04a
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• pp.135-137
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• 2006

To improve device yield and throughput, faults in plasma processing equipment should be quickly and accurately diagnosed. Despite many useful information of ex-situ sensor measurements, their applications to recognize plasma faultshave not been investigated. In this study, a new technique to identify fault causes by recognizing X-ray photoelectron spectroscopy (XPS) using neural network and continuous wavelet transformation (CWT). The presented technique was evaluated with the plasma etch data. A totalof 17 experiments were conducted for model construction. Model performance was investigated from the perspectives of training error, testing error, and recognition accuracy with respect to various thresholds. CWT-based BPNN models demonstrated a higher prediction accuracy of about 26%. Their advantages over pure XPS-based models were conspicuous in all three measures at small networks.