• Journal of Powder Materials
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• v.25 no.2
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• pp.120-125
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• 2018

Boron nitride nanotubes (BNNTs) are receiving great attention because of their unusual material properties, such as high thermal conductivity, mechanical strength, and electrical resistance. However, high-throughput and high-efficiency synthesis of BNNTs has been hindered due to the high boiling point of boron (${\sim}4000^{\circ}C$) and weak interaction between boron and nitrogen. Although, hydrogen-catalyzed plasma synthesis has shown potential for scalable synthesis of BNNTs, the direct use of $H_2$ gas as a precursor material is not strongly recommended, as it is extremely flammable. In the present study, BNNTs have been synthesized using radio-frequency inductively coupled thermal plasma (RF-ITP) catalyzed by solid-state ammonium chloride ($NH_4Cl$), a safe catalyst materials for BNNT synthesis. Similar to BNNTs synthesized from h-BN (hexagonal boron nitride) + $H_2$, successful fabrication of BNNTs synthesized from $h-BN+NH_4Cl$ is confirmed by their sheet-like properties, FE-SEM images, and XRD analysis. In addition, improved dispersion properties in aqueous solution are found in BNNTs synthesized from $h-BN+NH_4Cl$.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.135.1-135.1
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• 2014

Silicon nanoparticles can be synthesized in a standard radio-frequency glow discharge system at low temperature (${\sim}200^{\circ}C$). Plasma synthesis of silicon nanoparticles, initially a side effect of powder formation, has become over the years an exciting field of research which has opened the way to new opportunities in the field of materials deposition and their application to optoelectronic devices. Hydrogenated polymorphous silicon (pm-Si:H) has a peculiar microstructure, namely a small volume fraction of plasma synthesized silicon nanoparticles embedded in an amorphous matrix, which originates from the unique deposition mechanism. Detailed discussion on plasma synthesis of silicon nanoparticles, growth mechanism and photovoltaic application of pm-Si:H will be presented.

• Journal of the Korean institute of surface engineering
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• v.57 no.3
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• pp.155-164
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• 2024

Physical properties of carbon nanomaterials are dependent on their nanostructures and they are modified by diverse synthesis methods. Among them, thermal plasma method stands out for synthesizing carbon nanomaterials by controlling chemical and physical reactions through various design and operating conditions such as plasma torch type, plasma gas composition, power capacity, raw material injection rate, quenching rate, kinds of precursors, and so on. The method enables the production of carbon nanomaterials with various nanostructures and characteristics. The high-energy integration at high-temperature region thermal plasma to the precursor is possible to completely vaporize precursors, and the vaporized materials are rapidly condensed to the nanomaterials due to the rapid quenching rate by sharp temperature gradient. The synthesized nanomaterials are averagely in several nanometers to 100 nm scale. Especially, the thermal plasma was validated to synthesize low-dimensional carbon nanomaterials, carbon nanotubes and graphene, which hold immense promise for future applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.136.1-136.1
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• 2015

In the present study, UHF (320 MHz) in combination with RF (13.56 MHz) plasmas was used for the synthesis of hydrogenated silicon nitride (SiNx:H) films by PECVD process at low temperature. RF/UHF hybrid plasmas were maintained at a fixed pressure of 410 mTorr in the N2/SiH4 and N2/SiH4/NH3 atmospheres. To investigate the radical generation and plasma formation and their control for the growth of the film, plasma diagnostic tools like vacuum ultraviolet absorption spectroscopy (VUVAS), optical emission spectroscopy (OES), and RF compensated Langmuir probe (LP) were utilized. Utilization of RF/UHF hybrid plasmas enables very high plasma densities ~ 1011 cm-3 with low electron temperature. Measurements using VUVAS reveal the UHF source is quite effective in the dissociation of the N2 gas to generate more active atomic N. It results in the enhancement of the Si-N bond concentration in the film. Consequently, the deposition rate has been significantly improved up to 2nm/s for the high rate synthesis of highly transparent (up to 90 %) SiNx:H film. The films properties such as optical transmittance and chemical composition are investigated using different analysis tools.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2011.11a
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• pp.694-696
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• 2011

The high enthalpy plasma research center in Chonbuk national university is under construction for four types of plasma equipments. The equipments are 1set of 0.4 MW class enhanced Huels type plasma equipment, 1 set of 2.4 MW class enhanced Huels type plasma quipment, 1 set of 60 kW RF plasma equipment and 1 set of 200 kW RF plasma equipment. 60kW RF plasma system is R&D and pilot scale production equipment of nano powder synthesis and plasma spray coating. 200kW RF plasma system is mass production equipment with high power capacity of nano powder synthesis. 0.4MW plasma system can be applied to the ground test facility for material testing under re-entry conditions for space vehicles.

• Journal of the Korean Ceramic Society
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• v.29 no.9
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• pp.681-688
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• 1992

Ultrafine Si3N4 and Si3N4+SiC mixed powders were synthesized through thermal plasma chemical vapor deposition(CVD) using a hybrid plasma, which was characterized by the supersposition of a radio-frequency plasma and arc jet. The reactant SiCl4 was injected into an arc jet and completely decomposed in a hybrid plasma, and the second reactant CH4 and/or NH3 mixed with H2 were injected into the tail flame through double stage ring slits. In the case of ultrafine Si3N4 powder synthesis, reaction efficiency increased significantly by double stage injection compared to single stage one, although crystallizing behaviors depended upon injection speed of reactive quenching gas (NH3+N2) and injection method. For the preparation of Si2N4+SiC mixed powders, N/C composition ratio could be controlled by regulating the injection speed of NH3 and/or CH4 reactant and H2 quenching gas mixtures as well as by adjusting the reaction space.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.04a
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• pp.142-142
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• 2006

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.523-527
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• 2012

Silicon carbide (SiC) has recently drawn an enormous amount of industrial interest due to its useful mechanical properties, such as its thermal resistance, abrasion resistance and thermal conductivity at high temperatures. In this study, RF thermal plasma (PL-35 Induction Plasma, Tekna CO., Canada) was utilized for the synthesis of high-purity SiC powder from an organic precursor (hexamethyldisilazane, vinyltrimethoxysilane). It was found that the SiC powders obtained by the RF thermal plasma treatment included free carbon and amorphous silica ($SiO_2$). The SiC powders were further purified by a thermal treatment and a HF treatment, resulting in high-purity SiC nano-powder. The particle diameter of the synthesized SiC powder was less than 30 nm. Detailed properties of the microstructure, phase composition, and free carbon content were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), a thermogravimetric (TG) analysis, according to the and Brunauer-Emmett-Teller (BET) specific surface area from N2 isotherms at 77 K.

• Journal of the Korean Ceramic Society
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• v.33 no.11
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• pp.1285-1291
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• 1996

Using Cr2O3 Al and graphite powders as starting materials Cr3C2 was synthesized by combustion synthesis process according to the following reaction : 3Cr3C2 +4C+6Allongrightarrow2Cr3C2 +3Al2O3. The synthesis was conducted at 2 atm in an argon atmosphere. in this study main-product was monolithic phase of Cr3C2 /Cr7C3 mixture and sub-product was slag state of $\alpha$-Al2O3. Single phase of Cr3C2 was obtained when crushed main-product was heat-treated at 120$0^{\circ}C$ for 3h in vacuum state with addition of 2.5wt% C. The obtained Cr3C2 powder can be used as plasma-arc deposit material because the flowability index of powder with the size of 9-50${\mu}{\textrm}{m}$ was 66.

• Korean Journal of Materials Research
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• v.27 no.12
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• pp.710-715
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• 2017

We synthesized YOF(yttirum oxyfluoride) powders through solid state reactions using $Y_2O_3$ and $YF_3$ as raw materials. The synthesis of crystalline YOF was started at $300^{\circ}C$ and completed at $500^{\circ}C$. The atmosphere during synthesis had a negligible effect on the synthesis of the YOF powder under the investigated temperature range. The particle size distribution of the YOF was nearly identical to that of the mixed $Y_2O_3$ and $YF_3$ powders. When the synthesized YOF powders were used as a raw material for the suspension plasma spray(SPS) coating, the crystalline phases of the coated layer consisted of YOF and $Y_2O_3$, indicating that oxidation or evaporation of YOF powders occurred during the coating process. Based on thermogravimetric analysis, the crystalline formation appeared to be affected by the evaporation of fluoride because of the high vapor pressure of the YOF material.