• Journal of Powder Materials
• /
• v.12 no.5 s.52
• /
• pp.351-356
• /
• 2005

Nanoscale Al powder with thin layer of alumina was produced by Wire Electric Explosion (WEE) process. Spark-Plasma Sintering (SPS) was performed for the produced powder to confirm the effectiveness of SPS like so-called 'surface-cleaning effect' and so on. Crystallite size and alumina content of produced powder varied with the ratio of input energy to sublimation energy of Al wire ($e/e_s$): Increase in ($e/e_s$) resulted in the decrease of crystallite size and the increase of alumina content. Shrinkage curve during SPS process showed that the oxide surface layer could not be destroyed near the melting point of Al. It implied that there was not enough or no spark-plasma effect during SPS for Al/Alumina powder.

• Journal of Powder Materials
• /
• v.30 no.1
• /
• pp.41-46
• /
• 2023

In this study, an Al₈₂Ni₇Co₃Y₈ (at%) bulk metallic glass is fabricated using gas-atomized Al₈₂Ni₇Co₃Y₈ metallic glass powder and subsequent spark plasma sintering (SPS). The effect of powder size on the consolidation of bulk metallic glass is considered by dividing it into 5 ㎛ or less and 20-45 ㎛. The sintered Al₈₂Ni₇Co₃Y₈ bulk metallic glasses exhibit crystallization behavior and crystallization enthalpy similar to those of the Al₈₂Ni₇Co₃Y₈ powder with 5 ㎛ or less and it is confirmed that no crystallization occurred during the sintering process. From these results, we conclude that the Z-position-controlled spark plasma sintering process, using superplastic deformation by viscous flow in the supercooled liquid-phase region of amorphous powder, is an effective process for manufacturing bulk metallic glass.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.198-198
• /
• 2011

단분산 결정질 실리콘 나노입자 (<10 nm)는 양자점 효과로 인한 선택적 파장 흡수가 가능하므로 태양전지 분야에 응용 가능성이 크다. 특히 입경의 크기가 작아지면 부피대비 표면적이 넓어지기 때문에 태양빛 흡수 면적이 증가한다. 따라서 입자의 크기는 태양전지에서 효율을 결정하는 중요한 요소 중 하나이다. 이러한 이유에서 plasma arc synthesis, laser ablation, pyrolysis 그리고 PECVD (Plasma Enhanced Chemical Vapor Deposition) 등이 실리콘 나노입자를 합성하는데 연구되어 왔으며, 특히 PECVD는 입자 생성과 동시에 균일한 증착이 이루어질 수 있기 때문에 태양전지 제작 시 공정 효율을 높일 수 있다. PECVD를 이용한 나노입자 합성에서 입경을 제어하는데 중요한 전구물질은 Ar과 SiH4가스이다. Ar 가스는 ICP (Inductively Coupled Plasma) 챔버 내부에 가해준 전력을 통해 가속됨으로써 분해되어 Ar plasma가 생성된다. 이는 공급되는 SiH4가스를 분해시켜 핵생성을 유도하고, 그 주위로 성장시킴으로써 실리콘 나노입자가 합성된다. 이때 중요한 변수 중 하나는 핵생성과 입자성장시간의 조절을 통한 입경제어 이다. 또한 공급되는 가스의 유량은 입자가 생성될 때 필요한 화학적 구성비를 결정하므로 입경에 중요한 요소가 된다. 마지막으로 공정압력은 챔버내부의 plasma 구성 요소들의 평균 자유 행로를 결정하여 SiH4가 분해되어 입자가 생성되는 속도와 양을 제어한다. PECVD를 이용한 실리콘 나노입자 형성의 주요 변수는 RF pulse, 가스(Ar, SiH4, H2)의 유량, Plasma power, 공정압력 등이 있다. 본 연구에서는 RF (Radio Frequency) PECVD방법을 이용하여 실리콘 나노입자를 만드는데 필요한 여러 변수들을 제어함으로써 이에 따른 입경분포 차이를 연구하였다. 또한 SEM (Scanning Electron Microscopy)과 SMPS (Scanning Mobility Particle Sizer)를 이용하여 각 변수에 따라 생성된 나노입자의 입경과 농도를 분석하였다. 이 중 plasma power에 따른 입경분포 측정 결과 600W에서 합성된 실리콘 나노입자가 상당히 단분산 된 형태로 나타남을 확인할 수 있었고 향후 다른 변수의 제어, 특히 DC bias 전압과 열을 가함으로써 나노입자의 결정성을 확인하는 추가 연구를 통해 태양전지 제작에 응용 할 수 있을 것으로 예상된다.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2001.11a
• /
• pp.35-35
• /
• 2001

agnesium Oxide (MgO) with a NaCI structure is well known to exhibit high secondary electron emission, excellent high temperature chemical stability, high thermal conductance and electrical insulating properties. For these reason MgO films have been widely used for a buffer layer of high $T_c$ superconducting and a protective layer for AC-plasma display panels to improve discharge characteristics and panel lifetime. Up to now MgO films have been synthesized by lE-beam evaporation, Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapor Deposition (MOCVD), however there have been some limitations such as low film density and micro-cracks in films. Therefore magnetron sputtering process were emerged as predominant method to synthesis high density MgO films. In previous works, we designed and manufactured unbalanced magnetron source with high power density for the deposition of high quality MgO films. The magnetron discharges were sustained at the pressure of O.lmtorr with power density of $110W/\textrm{cm}^2$ and the maximum deposition rate was measured at $2.8\mu\textrm{m}/min$ for Cu films. In this study, the syntheses of MgO films were carried out by unbalanced magnetron sputtering with various $O_2$ partial pressure and specially target power densities, duty cycles and frequency using pulsed DC power supply. And also we investigated the plasma states with various $O_2$ partial pressure and pulsed DC conditions by Optical Emission Spectroscopy (OES). In order to confirm the relationships between plasma states and film properties such as microstructure and secondary electron emission coefficient were analyzed by X-Ray Diffraction(XRD), Transmission Electron Microscopy(TEM) and ${\gamma}-Focused$ Ion Beam (${\gamma}-FIB$).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.6
• /
• pp.349-355
• /
• 2017

Zinc sulphide (ZnS) nanoparticles were fabricated by hydrothermal synthesis at $180^{\circ}C$ for 12 h. Two kinds of ZnS powder (hydrothermal synthesized ZnS and commercial ZnS) were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) for phase and microstructure, respectively. The XRD patterns showed that all ZnS nanoparticles have a sphalerite (cubic) structure. The nanoparticles of two different ZnS powders were sintered by spark plasma sintering. The sintered ZnS were analyzed by XRD, SEM, and FT-IR. We found that the transmittance of the infrared region is highly dependent on the density and crystal structure of sintered ZnS and the purity of the starting ZnS powder.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.24 no.1
• /
• pp.1-7
• /
• 2014

Aluminum nitride, which has outstanding properties such as high thermal conductivity and electrical resistivity, has been received a great attention as a substrate and packaging material of semiconductor devices. Since aluminum nitride has a high sintering temperature of 2173 K and its properties depends on the impurity level, it is necessary to synthesize high-purity and nano-sized aluminum nitride powders for the applications. In this research, we synthesized high purity aluminum nitride nanopowders from aluminum using RF induction thermal plasma system. Sheath gas (NH3) flow was controlled to establish the synthesis condition of high purity aluminum nitride nanopowders. The obtained aluminum nitride nanopowders were evaluated by XRD, SEM, TEM, BET, FTIR and N-O analysis.

• Journal of radiological science and technology
• /
• v.27 no.2
• /
• pp.45-50
• /
• 2004

Synthesis diamond films have been deposited on the molybdenum substrates using an microwave plasma enhanced chemical vapor deposition method. The effects of deposition time, surface morphology, infrared transmittance and Raman scattering have been studied. Diamond deposited on molybdenum substrate for 100 hours by MW plasma CVD from $CH_4-H_2-O_2$ gas mixture had good crystallity with $100[{\mu}m]$ thickness needed for radiation detector. Diamond radiation detector of M-I-M type was made and the current of radiation detector was increased by increasing X-ray dose.

• Journal of the Korean Chemical Society
• /
• v.44 no.6
• /
• pp.592-599
• /
• 2000

The fine particles of binary ceramic composite of titania-partially-stabilized zirconia(TPSZ) were synthesized by ultrasonic spray pyrolysis at the various temperatures, compositions and concentrations and the effects of process factors for synthesis on the characteristics of fine particles were discussed. The starting salt solutions were prepared to have the ionic concentrations of 0.025~0.1 M aqueous solutions. The fine particles were prepared to have the compositions of 90~97.5 wt% of $ZrO_2$ and 2.5~10 wt% of $TiO_2$. The temperatures for particle synthesis were regulated to be 400~550$^{\circ}C$ as a drying zone, 800~1100$^{\circ}C$ as a pyrolysis zone. The produced fine particles were collected by a wet process and analyzed to investigate characteristic properties after being dried. The compositions of ceramic fine particles were determined by Inductively Coupled Plasma-Atomic Emission Spectroscopy(ICP-AES) technique and phases, morphologies and particle sizes of those were investigated by Raman Spectroscopy, X-ray diffraction(XRD), Scanning Electron Microscopy(SEM), Transmission Electron Microscopy(TEM) and Particle Size Analyzer(PSA) techniques.

• Archives of Pharmacal Research
• /
• v.12 no.3
• /
• pp.207-213
• /
• 1989

This study was performed to investigate the mechanism of in vitro cytotosic actions of polyacetylenes which are panaxydol, panaxynol and panaxytriol isolated from Panax ginseng C. A. Meyer. DNA synthesis of L1210 cells was significantly inhibited with dose dependent pattern when L1210 cells were treated for 1 hour with over 5 .mu.g/ml of polyacetylenes. Panaxydol which had the most potent cytotoxicity among three polyacetylenes showed also the strongest inhibitory effect on DNA synthesis. Intracellular cyclic AMP levels of L1210 cells treated with 2.5 $\mu$g/ml of panaxydol or panaxytriol were significantly elevated on the incubation duration. The elevation of cyclic AMP levels by panaxytriol was higher than that by panaxydol, but no significant increase in cyclic AMP by panaxynol was observed. All three polyacetylenes had no effect on glycolysis of L1210 cells. Electron microscopic observations revealed that polyacetylenes caused damage to plasma membranes of L1210 cells in proportion to their cytotoxicities at each $ED_{50}$ value (panaxydol > panaxynol> panaxytriol). These results suggest that cytotoxicities of polyacetylenes against L1210 cells might be mediated by elevated cyclic AMP level, even though the relationship among their cytotoxicities, inhibitory effect on DNA synthesis and ability to elevation of cyclic AMP level are not fully agreed, and might be also related to membrane damage.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.105-105
• /
• 2012

We have developed a photoemission-assisted plasma-enhanced chemical vapor deposition (PAPE-CVD) [1,2], in which photoelectrons emitting from the substrate surface irradiated with UV light ($h{\nu}$=7.2 eV) from a Xe excimer lamp are utilized as a trigger for generating DC discharge plasma as depicted in Fig. 1. As a result, photoemission-assisted plasma can appear just above the substrate surface with a limited interval between the substrate and the electrode (~10 mm), enabling us to suppress effectively the unintended deposition of soot on the chamber walls, to increase the deposition rate, and to decrease drastically the electric power consumption. In case of the deposition of DLC gate insulator films for the top-gate graphene channel FET, plasma discharge power is reduced down to as low as 0.01W, giving rise to decrease significantly the plasma-induced damage on the graphene channel [3]. In addition, DLC thickness can be precisely controlled in an atomic scale and dielectric constant is also changed from low ${\kappa}$ for the passivation layer to high ${\kappa}$ for the gate insulator. On the other hand, negative electron affinity (NEA) of a hydrogen-terminated diamond surface is attractive and of practical importance for PAPECVD, because the diamond surface under PAPE-CVD with H2-diluted (about 1%) CH4 gas is exposed to a lot of hydrogen radicals and therefore can perform as a high-efficiency electron emitter due to NEA. In fact, we observed a large change of discharge current between with and without hydrogen termination. It is noted that photoelectrons are emitted from the SiO2 (350 nm)/Si interface with 7.2-eV UV light, making it possible to grow few-layer graphene on the thick SiO2 surface with no transition layer of amorphous carbon by means of PAPE-CVD without any metal catalyst.