• Journal of the Speleological Society of Korea
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• no.78
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• pp.29-31
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• 2007

This paper is devoted to a study of the characterization of the plasma state. For the purpose of monitoring plasma condition, we experiment on reactive ion etching (RIE) process. Without actual etch process, generated oxygen plasma, measurement of plasma emission intensity. Changing plasma process parameters, oxygen flow, RF power and chamber pressure have controlled. Using the optical emission spectroscopy (OES), we conform to the unique oxygen wavelength (777nm), the most powerful intensity region of the designated range. Increase of RF power and chamber pressure, emission intensity is increased. oxygen flow is not affect to emission intensity.

• Journal of Environmental Health Sciences
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• v.39 no.3
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• pp.289-299
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• 2013

Objectives: For the field application of the dielectric barrier discharge plasma reactor, scale-up of the plasma reactor is needed. This study investigated the possibility of inactivation of microorganisms in sewage using pilot multi-plasma reactor. We also considered the possibility of degradation of total organic carbon (TOC) and nonbiodegradable matter ($UV_{254}$) in sewage. Methods: The pilot plasma reactor consists of plasma reactor with three plasma modules (discharge electrode and quartz dielectric tube), liquid-gas mixer, high voltage transformers, gas supply equipment and a liquid circulation system. In order to determine the operating conditions of the pilot plasma reactor, we performed experiments on the operation parameters such as gas and liquid flow rate and electric discharge voltage. Results: The experimental results showed that optimum operation conditions for the pilot plasma reactor in batch experiments were 1 L/min air flow rate), 4 L/min liquid circulation rate, and 13 kV electric discharge voltage, respectively. The main operation factor of the pilot plasma process was the high voltage. In continuous operation of the air plasma process, residual microorganisms, $UV_{254}$ absorbance and TOC removal rate at optimal condition of 13 kV were $10^{2.24}$ CFU/mL, 56.5% and 8.6%, respectively, while in oxygen plasma process at 10 kV, residual microorganisms, $UV_{254}$ absorbance and TOC removal rate at optimal conditions were $10^{1.0}$ CFU/mL, 73.3% and 24.4%, respectively. Electric power was increased exponentially with the increase in high voltage ($R^2$ = 0.9964). Electric power = $0.0492{\times}\exp^{(0.6027{\times}lectric\;discharge\;voltage)}$ Conclusions: Inactivation of microorganisms in sewage effluent using the pilot plasma process was done. The performance of oxygen plasma process was superior to air plasma process. The power consumption of oxygen plasma process was less than that of air plasma process. However, it was considered that the final evaluation of air and oxygen plasma must be evaluated by considering low power consumption, high process performance, operating costs and facility expenses of an oxygen generator.

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.133-138
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• 2017

We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.

• Journal of Environmental Science International
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• v.23 no.3
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• pp.369-378
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• 2014

Effect of improvement of the dielectric barrier discharge (DBD) plasma system on the inactivation performance of bacteria were investigated. The improvement of plasma reactor was performed by combination with the basic plasma reactor and UV process or combination with the basic plasma reactor and circulation system which was equipped with gas-liquid mixer. Experimental results showed that tailing effect was appeared after the exponential decrease in basic plasma reactor. There was no enhancement effect on the Ralstonia Solanacearum inactivation with combination of basic plasma process and UV process. The application of gas-liquid mixing device on the basic plasma reactor reduced inactivation time and led to complete sterilization. The effect existence of gas-liquid mixing device, voltage, air flow rate (1 ~ 5 L/min), water circulation rate (2.8 ~ 9.4 L/min) in gas-liquid mixing plasma, plasma voltage and UV power of gas-liquid mixing plasma+UV process were evaluated. The optimum air flow rate, water circulation rate, voltage of gas-liquid mixing system were 3 L/min, 3.5 L/min and 60 V, respectively. There was no enhancement effect on the Ralstonia Solanacearum inactivation with combination of gas-liquid mixing plasma and UV process.

• Transactions on Electrical and Electronic Materials
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• v.14 no.2
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• pp.71-77
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• 2013

Advanced semiconductor manufacturing technology requires methods to maximize tool efficiency and improve product quality by reducing process variability. Real-time plasma process monitoring and diagnosis have become crucial for fault detection and classification (FDC) and advanced process control (APC). Additional sensors may increase the accuracy of detection of process anomalies, and optical monitoring methods are non-invasive. In this paper, we propose the use of a chromatic data acquisition system for real-time in-situ plasma process monitoring called the Plasma Eyes Chromatic System (PECS). The proposed system was initially tested in a six-inch research tool, and it was then further evaluated for its potential to detect process anomalies in an eight-inch production tool for etching blanket oxide films. Chromatic representation of the PECS output shows a clear correlation with small changes in process parameters, such as RF power, pressure, and gas flow. We also present how the PECS may be adapted as an in-situ plasma arc detector. The proposed system can provide useful indications of a faulty process in a timely and non-invasive manner for successful run-to-run (R2R) control and FDC.

• Journal of the Semiconductor & Display Technology
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• v.18 no.1
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• pp.5-9
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• 2019

Optical emission spectroscopy is used to identify chemical species and monitor the changes of process results during the plasma process. However, plasma process monitoring or fault detection by using emission signal variation monitoring is vulnerable to background signal fluctuations. IR heaters are used in semiconductor manufacturing chambers where high temperature uniformity and fast response are required. During the process, the IR lamp output fluctuates to maintain a stable process temperature. This IR signal fluctuation reacts as a background signal fluctuation to the spectrometer. In this research, we evaluate the effect of infrared background signal fluctuation on plasma process monitoring and improve the plasma process monitoring accuracy by using simple infrared background signal subtraction method. The effect of infrared background signal fluctuation on plasma process monitoring was evaluated on $SiO_2$ PECVD process. Comparing the $SiO_2$ film thickness and the measured emission line intensity from the by-product molecules, the effect of infrared background signal on plasma process monitoring and the necessity of background signal subtraction method were confirmed.

• Journal of Environmental Health Sciences
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• v.39 no.2
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• pp.187-195
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• 2013

Objectives: For the practical application of the dielectric barrier discharge plasma reactor, a plasma reactor able to manage large volumes of water is needed. This study investigated the possibility of the practical application of a multi-plasma reactor which is a scaled-up version of a single plasma reactor. Methods: The multi-plasma reactor consists of several high-voltage transformers and plasma modules (discharge, ground electrodes and quartz dielectric tubes). The effects of water characteristics such as voltage (30-120 V), air flow rate (1-5 l/min), number of high-voltage transformers and plasma modules, and water quality on Escherichia coli (E. coli) disinfection and decrease of COD and $UV_{254}$ absorbance were investigated. Results: The experimental results showed that at a voltage of over 80 V, most of the E. coli were disinfected within 90 seconds. E. coli inactivation was not affected by the air flow rate. E. coli disinfection in the multiplasma process showed the traditional log-linear form of the disinfection curve. E. coli inactivation performance by transformer 3-Reactor 5 and transformer 3-Reactor 3 were similar. The disinfection performance of the UV process was affected by artificial sewage water. However, the plasma process was less affected by the artificial sewage within the standards for effluent water quality. Conclusions: Disinfection performance with several low voltages and plasma modules of three to five in number applied to the plasma process was higher than that concentrating a small amount of high voltage through a single plasma reactor. Removal of COD, $UV_{254}$ absorbance, and E. coli disinfection with the plasma process were better than with the UV process.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.721-723
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• 2005

We applied the Atmospheric Pressure Plasma (AP-plasma) to the MgO film to try to control the Aging-time on the PDP production-line. The MgO film surface and the discharge characteristics of AC-PDPs were investigated, using the plasma-treated MgO film. The Aging-time change can be achieved by treating the MgO film with plasma. This method can be adapted to the mass production-line.

• International journal of advanced smart convergence
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• v.10 no.1
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• pp.159-165
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• 2021

Electronic devices used in the mobile environments fabricated under the plasma conditions in high vacuum system. Especially for the development of advanced electronic devices, high quality plasma as the process conditions are required. For this purpose, the variable conductance throttle valves for controllable plasma employed to the high vacuum system. In this study, we analyzed the effects of throttle valve applications on vacuum characteristics simulated to obtain the optimum design modelling for plasma conditions of high vacuum system. We used commercial simulator of vacuum system, VacSim(multi) on this study. Reliability of simulator verified by simulation of the commercially available models of high vacuum system. Simulated vacuum characteristics of the proposed modelling agreed with the observed experimental behaviour of real systems. Pressure limit valve and normally on-off control valve schematized as the modelling of throttle valve for the constant process-pressure of below 10-3 torr. Simulation results plotted as pump down curve of chamber, variable valve conductance and conductance logic of throttle valve. Simulated behaviors showed the applications of throttle valve sustained the process-pressure constantly, stably, and reliably in plasma process.

• Transactions on Electrical and Electronic Materials
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• v.3 no.3
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• pp.14-17
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• 2002

The HDP (High Density Plasma) CVD process consists of a simultaneous sputter etch and chemical vapor deposition. As CMOS process continues to scale down to sub- quarter micron technology, HDP process has been widely used fur the gap-fill of small geometry metal spacing in inter-metal dielectric process. However, HBP CVD system has some potential problems including plasma-induced damage. Plasma-induced gate oxide damage has been an increasingly important issue for integrated circuit process technology. In this paper, thin gate oxide charge damage caused by HDP deposition of inter-metal dielectric was studied. Multiple step HDP deposition process was demonstrated in this work to prevent plasma-induced damage by introducing an in-situ top SiH$_4$ unbiased liner deposition before conventional deposition.