• Title/Summary/Keyword: plasma patterning

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Selective growth of carbon notubes by patterning nickel catalyst metal (패터닝된 Ni 촉매 금속 위에서의 탄소나노튜브 성장)

  • Bang Y.Y.;Chang W.S.;Han C.S.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2006.05a
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    • pp.473-474
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    • 2006
  • Aligned carbon nanotubes(CNTs) array were synthesized using direct current plasma-enhanced chemical vapor deposition. The nickel microgrids catalyzed the growth of carbon nanotubes which take on the area of the nickel microgrids. Selective growth of areas of nanotubes was achieved by patterning the nickel film. CNTs were grown on the pretreated substrates at 30% $C_2H_2:NH_3$ flow ratios for 10min. Carbon nanotubes with diameters about 20 nanometers and lengths approximately 720 nanometers were obtained. Morphologies of carbon nanotubes were observed by FE-SEM and TEM.

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Patterning of CVD Diamond Films For MEMS Application

  • Wang, Xiaodong;Yang, Yirong;Ren, Congxin;Mao, Minyao;Wang, Weiyuan
    • Journal of the Korean Vacuum Society
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    • v.7 no.s1
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    • pp.167-170
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    • 1998
  • To apply diamond films in microelectromechanical systems(MEMS), it is necessary to develop the patterning technologies of diamond films in the micrometer scale. In this paper, three different kinds of technologies for patterning CVD diamond films carried out by us were demonstrated: selective growth by improved diamond nucleation in DC bias-enhanced microwave plasma chemical vapor deposition (MPCVD) system, selective growth of seeding using diamond-particle-mixed photoresist, and selective etching of oxygen ion beam using Al as the mask. It was show that high selectivity and precise patterns had been achieved, and all the processes were compatible with IC process.

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Photolithographic Method of Patterning Barrier Ribs for PDP by Green Sheet

  • Park, Lee-Soon;Jang, Dong-Gyu;Hur, Young-June;Lee, Sung-Ho;Kim, Duck-Gon;Kwon, Young-Hwan
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1225-1228
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    • 2005
  • Barrier ribs in the plasma display panel(PDP) function to maintain the discharge space between the glass plates as well as to prevent optical crosstalk. Patterning of barrier ribs is one of unique processes for making PDP. In this work photosensitive barrier rib pastes were prepared by incorporating binder polymer, solvent, functional monomers photoinitiator, and barrier rib powder of which surface was treated with fumed silica particles. Study on the function of materials for the barrier rib paste were undertaken. After optimization of paste formulation and photolithographic process, it was found that photolithographic patterning of barrier ribs with photosensitive barrier rib green sheet could be used in the fabrication of high resolution PDP.

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Photosensitive Electrode Paste Formulation and Its Effect on Photolithographic Process

  • Park, Lee-Soon;Im, Moo-Sik;Park, Jin-Woo;Kim, Hong-Tak;Ryu, Jae-Hwa;Park, Seung-Tae
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.381-384
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    • 2003
  • Photosensitive electordes(Ag and Black) are widely used in the patterning of both address and bus electrodes on the rear and front panel of plasma display panel (PDP). As the need for high resolution(>XGA) and large area(>60 inches) PDP is increased, basic understanding of each component of formulation on the photolithographic process of patterning electrodes are required in order to increase the yield in the production of PDP. In this work, the materials and amount of necessary components of photosensitive electrode paste and their effect on the photolithographic process of patterning electrodes were studied.

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Comparison of the Existing Wet Etching and the Dry Etching with the ICP Process Method (새로운 ICP 장치를 이용한 고온 초전도체의 Dry Etching과 기존의 Wet Etching 기술과의 비교)

  • 강형곤;임성훈;임연호;한윤봉;황종선;한병성
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.2
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    • pp.158-162
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    • 2001
  • In this report, a new process for patterning of YBaCuO thin films, ICP(inductively coupled plasma) method, is described by comparing with existing wet etching method. Two 100㎛ wide and 2mm long YBaCuO striplines on LaAlO$_3$ substrates have been fabricated using two patterning techniques. And the properties were compared with the critical temperature and the SEM photography. Then, the critical temperatures of two samples were about 88 K, but the cross section of sample using ICP method was shaper than that using the wet etching method. ICP method can be used as a good etching technique process for patterning of YBaCuO superconductor.

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Magnetized Frequency characteristics of Enhanced Inductively Coupled Plasma (Enhanced Inductively Coupled Plasma의 자화 주파수 의존 특성)

  • 라상호;박세근;오범환
    • Proceedings of the IEEK Conference
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    • 2000.06b
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    • pp.302-305
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    • 2000
  • It is important to control the electron energy distribution to have high quality plasma process. A conventional inductively coupled plasma(ICP) source with 13.56MHz power is not adequate for low damage sub-half micron patterning process due to higher electron temperature. Only the pulsed plasma technique seems to provide low electron temperature, and thus low process damage. Recently, a novel method proposed by us, named as ‘Enhanced-ICP’, which uses periodic weak axial magnetic field added to a normal ICP source, has shown great improvement in etch characteristics. changes of plasma characteristics according to the frequency of time-varying axial magnetic field have been observed by probe-time-averaged Langmuir probe.

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Application of the Plasma Etching technique to Fabricating a Concave-type Pt Electrode Capacitor

  • Kim, Hyoun Woo;Hwang, Woon Suk
    • Corrosion Science and Technology
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    • v.2 no.5
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    • pp.243-246
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    • 2003
  • We have used a plasma etching method in order to develop a concave-type Pt electrode capacitor to overcome the limitation of conventional stack-type capacitor in a small critical-dimension (CD) pattern. We have deposited Pt layer on the concave-type structure made by patterning of $SiO_2$ and subsequently we separated the adjacent nodes by etch-back process with photoresist (PR) as a protecting layer.

Polyimide Surface Modifying using Near-Atmospheric Pressure Plasma for Inkjet Printing (준 대기압 플라즈마를 이용한 잉크젯 프린팅용 폴리이미드 표면 개질)

  • Mun, Mu-Gyeom;Yeom, Geun-Yeong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2014.11a
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    • pp.16-16
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    • 2014
  • 본 논문에서는 polymer 기판 위에 direct inkjet patterning을 효율적으로 수행하기 위하여 기판 표면의 chemical bonding과 morphology를 in-line system 적용이 가능한 near atmospheric pressure plasma (N-APP)를 이용 하여 기판을 modifying 시켰다. modified substrate 위에 inkjet printing을 이용하여 metal interconnection을 하였다. 그 결과 기존 기판에서의 line width 보다 얇은 선폭을 획득 하였고 adhesion이 향상 되었다.

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