• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.39-43
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• 2005

In the study, in order to deposit TaN thin film for diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristics of TaN thin films grown PAALD method. Plasma Assisted ALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamino) tantalum) precursor and NH3 reaction gas is shown that TaN thin film deposited high density and amorphous phase with XRD measurement. The degree of diffusion and reaction taking place in Cu/TaN (deposited using 150W PAALD)/$SiO_{2}$/Si systems with increasing annealing temperature was estimated for MOS capacitor property and the $SiO_{2}$, (600${\AA}$)/Si system surface analysis by C-V measurement and secondary ion material spectrometer (SIMS) after Cu/TaN/$SiO_{2}$ (400 ${\AA}$) layer etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to 500$^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.357-357
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• 2012

The doping process of the solar cell has been used by furnace or laser. But these equipment are so expensive as well as those need high maintenance costs and production costs. The atmospheric pressure plasma doping process can enable to the cost reduction. Moreover the atmospheric pressure plasma can do the selective doping, this means is that the atmospheric pressure plasma regulates the junction depth and doping concentration. In this study, we analysis the atmospheric pressure plasma doping compared to the conventional furnace doping. the single crystal silicon wafer doped with dopant forms a P-N junction by using the atmospheric pressure plasma. We use a P type wafer and it is doped by controlling the plasma process time and concentration of dopant and plasma intensity. We measure the wafer's doping concentration and depth by using Secondary Ion Mass Spectrometry (SIMS), and we use the Hall measurement because of investigating the carrier concentration and sheet resistance. We also analysis the composed element of the surface structure by using X-ray photoelectron spectroscopy (XPS), and we confirm the structure of the doped section by using Scanning electron microscope (SEM), we also generally grasp the carrier life time through using microwave detected photoconductive decay (u-PCD). As the result of experiment, we confirm that the electrical character of the atmospheric pressure plasma doping is similar with the electrical character of the conventional furnace doping.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.8
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• pp.6-14
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• 2006

This paper is a study about a proper method of plasma generation to cleaning method and a high frequency power equipment circuit to generation of plasma that used cleaning of chamber for TFT-LCD PECVD. The high density plasma required for cleaning causes a possibility of high density plasma more than $1{\times}10^{11}[EA/cm^3]$. It apply a ferrite core of ferromagnetic body to a existing ICP form. In case of power transfer equipment on 400[kHz] high frequency to generation of plasma it makes certain a stable switching operation in condition of plasma through using a inverter form for general purpose HB. And it demonstrates the performance of power transfer equipment using methods of measurement which use a transformer of series combination the density of plasma and the rate of dissolution of $NF_3$ in condition of $A_r\;and\;NF_3$.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.722-725
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• 2003

In AC plasma display, it is very important to quantify the wall voltage induced by the wall charge accumulated on the dielectric surface. If we know the quantities of the wall voltage in each period of every sequence; reset period, address period and sustain period, then it helps us to design the optimal driving waveform for high efficiency plasma display. We develop a new method to measure the wall voltage with VDS (Versatile Driving Simulator) system. From this method the wall voltage induced by a wall charge profiles just after the reset discharge of every cells in plasma display panel can be investigated and analyzed successfully. It is noted that the wall voltage profiles are influenced by the space charge and then they are stabilized as time goes by. It is also noted that both the remaining wall charge at the previous sequence and space charges contribute to wall voltage quantities just after the reset discharge. It is noted that the wall charges contribute dominantly after a few hundreds microseconds, while the space charges have been decayed within 100 ${\mu}s$ just after the reset discharge.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.476-480
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• 2003

In this paper, we have performed 3-dimensional time-resolving measurement of the Ne light emitted from the cell of plasma display panel(PDP) as a function of the pressure using the scanned point detecting system. From the temporal behavior results, we could analyze the discharge behavior of panel with Ne-Xe(4%) mixing gas and 300 torr, 400 torr and 500 torr pressure. At the top view of panel, the discharge of 300 torr panel starts at the 634 ns and ends at the 722 ns. The emission duration time is about 90 ns. The discharge of 400 torr panel starts at the 682 ns and ends at the 786 ns. the emission duration time is about 100 ns. Also, the discharge of 500 torr panel starts at the 770 ns and ends at the 826 ns. the emission duration time is about 56 ns. The discharge moves from inner edge of cathode electrode to outer cathode electrode forming arc type. In the side view of 300 torr, 400 torr and 500 torr an emission shows that the light is detected up to 180${\mu}{\textrm}{m}$, 150${\mu}{\textrm}{m}$ and 70${\mu}{\textrm}{m}$ height of barrier rib and the emission distribution of the 300 torr is wider than 400 torr, 500 torr.

• Analytical Science and Technology
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• v.16 no.1
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• pp.82-89
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• 2003

Isotope dilution mass spectrometry (IDMS) was applied to the determination of Ni, Cr, Mo in low alloy steel reference materials. The Mo isotope ratio measurement was performed by dynamic reaction cell inductively coupled plasma mass spectrometry (DRC-ICP/MS) using ammonia as a reaction cell gas. In the case of Ni and Cr measurement, all data were obtained at medium resolution mode (m/${\Delta}m=3000$) of double focusing sector field high resolution inductively coupled plasma mass spectrometry (HR-ICP/MS). For the method validation of the technique was assessed using the certified reference materials such as NIST SRM 361, NIST SRM 362, NIST SRM 363, NIST SRM 364, NIST SRM 36b. This method was applied to the determination of Ni, Cr and Mo in low alloy steel sample (CCQM-P25) provided by NMIJ for international comparison study.

• Journal of the Optical Society of Korea
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• v.15 no.1
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• pp.38-43
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• 2011

We have developed a simple model of a bright-room contrast ratio (BRCR) measurement system for plasma display panels (PDPs) adopting a contrast enhancement film (CEF) by using an illumination design tool. Only four model parameters were used, namely, total ambient illumination power delivered by fluorescent lamps, a panel scattering rate, illuminance of PDP white patterns, and the absorption coefficient of a color adjusting film. These parameters were determined by simple optical measurements and matching simulations. The proposed model was employed to predict the BRCR values of four different CEF samples, and the simulated ones were found to be in agreement with measured ones within about 10% relative-error.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1915-1917
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• 2004

Inductively coupled plasma is commonly used for electrodeless lamp due to its ease of plasma generation. Optical characteristics significantly depend on the RF power and gas pressure of the plasma. This paper describes the measurement of luminance as a function of RF power and gas pressure with a goal of finding optimal operating conditions of the electrodeless lamp. The gas pressure was varied from 10 [mTorr] to 500 [mTorr] and the RF power was varied from 10 [W] to 200 [W]. It was found that the luminance tends to be decreased when argon pressure is increased, and the luminance is increased as RF power is increased. It was also found that the luminance per unit RF power is high when the argon pressure is low and when the RF power is in the range of 30 [W]${\sim}$40 [W].

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.149-149
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• 2012

We introduce Helicon discharge plasma source and Laser Thomson scattering system recently finished an installation in KRISS. Laser Thomson scattering method is promising for diagnostics in Helicon plasma because a measurement by electrical probe typically used has significant errors due to the gyromotion of electrons induced by high magnetic field. However, we found that LTS is affected by magnetic field so that we applied the normalization method for processing data and the results show a clear Maxwellian distribution at various conditions of magnetic field and RF power at low energy part without distortion.

• Textile Coloration and Finishing
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• v.8 no.2
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• pp.56-63
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• 1996

Low-temperature plasma treatment or sputter etching is of interest as one of the techniques to modify polymer surface. In this study, poly(ethylene terephthalate)(PET), nylon 6 and cotton fabrics dyed three black dyes were subjected to low-temperature argon plasma and also sputter etching. In relation to bathochromic effect, the surface characteristics of the treated fabrics and films were investigated by means of critical surface tension, SEM and ESCA measurement. The depth of shade of fabrics more increased by the sputter etching technique than argon plasma treatment. Many microcraters on the fiber surface formed by the sputter etching resulted in increase of surface area of the fiber and wettability, but the hydrophobic group was increased by the results of ESCA analysis. In particular the change in reflective index of the fibers was much more effective than the chemical composition of the fiber surface on increasing of the depth of shade.