• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.62-62
• /
• 2015

In this study, we study the effects of CF4 plasma treatment on the characteristics of enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs). The CF4 plasma is generated by inductively coupled plasma reactive ion etching (ICP-RIE) system. The CF4 gas is decomposed into fluorine ions by ICP-RIE and then fluorine ions will effect the AlGaN/GaN interface to inhibit the electron transport of two dimension electron gas (2DEG) and increase channel resistance. The CF4 plasma method neither like the recessed type which have to utilize Cl2/BCl3 to etch semiconductor layer nor ion implantation needed high power to implant ions into semiconductor. Both of techniques will cause semiconductor damage. In the experiment, the CF4 treatment time are 0, 50, 100, 150, 200 and 250 seconds. It was found that the devices treated 100 seconds showed best electric performance. In order to prove fluorine ions existing and CF4 plasma treatment not etch epitaxial layer, the secondary ion mass spectrometer confirmed fluorine ions truly existing in the sample which treatment time 100 seconds. Moreover, transmission electron microscopy showed that the sample treated time 100 seconds did not have etch phenomena. Atomic layer deposition is used to grow Al2O3 with thickness 10, 20, 30 and 40 nm. In electrical measurement, the device that deposited 20-nm-thickness Al2O3 showed excellent current ability, the forward saturation current of 210 mA/mm, transconductance (gm) of 44.1 mS/mm and threshold voltage of 2.28 V, ION/IOFF reach to 108. As IV concerning the breakdown voltage measurement, all kinds of samples can reach to 1450 V.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.27 no.3
• /
• pp.246-252
• /
• 2016

In this paper, reduction of monostatic RCS by DBD plasma is measured. For the calibration of monostatic RCS, S-parameters of two metallic plate in different sizes are used and the result is within 0.4 dB error. Metallic plate is put behind DBD plasma generator for measuring reduction of monostatic RCS by DBD plasma. To prevent arc discharge between metallic plate and DBD plasma generator, measurement is progressed spacing the interval between metallic plate and DBD plasma generator. As a result, maximum reduction of monostatic RCS is about 3 dB at 7.4 GHz.

• Electrical & Electronic Materials
• /
• v.9 no.5
• /
• pp.506-511
• /
• 1996

This paper deals with an inexpensive, simple and fast Langmuir probe sweeping circuit and its application. This sweeper completes a probe trace in a 1 ms order. Futhermore, the circuit drives a maximum probe voltage of $\pm$30V and has a maximum probe current capability of a few amperes. The plasma parameters are successfully determined using the fast Langmuir probe method.

• Fibers and Polymers
• /
• v.3 no.4
• /
• pp.174-178
• /
• 2002

A plasma treatment using saturated $CF_4$ gas was employed to improve the resistance of polypropylene fabrics to water wetting. The fabrics were significantly fluorinated even within a short treatment time of 30 seconds. The result of contact angle measurement indicated that such highly hydrophobic surface was considerably durable even after 150 days of aging.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.336-339
• /
• 2003

The present report is the investigation of the effects of the HIP treatment on plasma-sprayed ceramic coating of $Al_2O_3$, $Al_2O_3-SiO_2$ on the metal substrate. These effects were characterized by phase identification, Vickers hardness measurement, and tensile test before and after HIPing.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.799-801
• /
• 2003

The secondary electron emission $coefficient({\bullet})$ of vacuum annealed MgO films has been investigated by ${\bullet}$ -focused ion beam(${\bullet}$ -FIB) system. The vacuum annealed MgO films have been found to have higher ${\bullet}$ values than those for as-deposited MgO films for Ne+ ion. Also it is found that the ${\bullet}$ for air-hold of vacuum annealed MgO layers for 24-hours is similar to that for vacuum annealed MgO films without any air-hold.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.202-202
• /
• 2011

Diagnostics of plasma density is a key factor for monitoring plasma processing. Various probes are invented to measure plasma density and cut-off probe is a one of the most promising diagnostics tool for measuring plasma density. However, at the low density or high pressure the cut-off probe cannot clearly resolve the cut-off peak. Several reasons make this problem: Cut-off likes peaks caused by cavity resonances and weaken transmission spectrum signal at high pressure. Recently, You et al., have researched mechanism of cut-off probe and we improve the cut-off reliability and sensitivity base on that research. Modified cut-off antenna is adapted and bias cut-off probe method is tried. These experiment results have good agreement with the previous study and show good measurement characteristics.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.150-150
• /
• 2011

Electron-neutral collision frequency is one of the important parameters in the plasma physics. Recently, It is employed to monitor the plasma processing in industrial plasma engineering [1]. Using the wave-cutoff probe with network analyzer, the plasma impedance was measured in inductively coupled argon plasma and analyzed to determine the resonance frequency. The electron-neutral collision frequency is directly calculated from the resonance frequency. The calculated electron-neutral collision frequency is good agree with reference which is calculated by measured EEDF using single langmuir probe (SLP).

• Journal of the Korean institute of surface engineering
• /
• v.50 no.6
• /
• pp.504-509
• /
• 2017

In order to improve corrosion resistance for cast stainless steel in seawater, the characteristics of corrosion resistance after plasma ion nitriding was investigated. Plasma ion nitriding process was conducted in a mixture of nitrogen of 25% and hydrogen of 75% at substrate temperature ranging from 350 to $500^{\circ}C$ for 10 hours using pulsed-DC glow discharge plasma with working pressure of 250 Pa in vacuum condition. Corrosion tests were carried out for as-received and plasma ion nitrided specimens. The corrosion characteristics were investigated by measurement of weight loss and observation of surface morphology. In anodic polarization experiment, relatively less damage depth and weight loss were presented at a nitrided temperature of $400^{\circ}C$, attributing to the formation of S-phase.

• Textile Coloration and Finishing
• /
• v.17 no.6 s.85
• /
• pp.36-41
• /
• 2005

The effects of low temperature plasma treatment on the properties of three types of foams, polyurethane(PU), injection phylon(IP), and phylon(PH) that used for footwear mid-sole were examined. The change of surface properties of foams were characterized by electron scanning microscope, contact angle measurement, and universal testing machine. Adhesion was tested by T-peel tests of plasma treated foams/polyurethane adhesive joints. The contact angle of three types of foams were decreased dramatically with the plasma treatment time, specifically noticeable in the case of phylon(Ph). It has shown the relationship with the contact angle of phylon(PH) and the distance between electrode and samples. The peel strength of foams were increased with the increase of plasma treatment time.