• 제목/요약/키워드: plasma measurement

검색결과 780건 처리시간 0.033초

P018 Comparison between Cutoff Probe and Langmuir Probe: Focused on Measurement Technique Error

  • 권준혁;김대웅;유신재;신용현
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.235.1-235.1
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    • 2014
  • Precise measurement of plasma parameters including density and temperature is the most essential part for understanding plasma characteristics. To persue more accurate measurement, it is very important to understand the intrinsic error of the measurement method. In this paper, we performed the plasma measurement with different method; langmuire probe and cutoff probe. Both measurement technology are known to be exactly correlate with etch other. We conducted the four set of same experiments process by diffrent persons to observe the intrinsic error based on measurement tools. As a result, the cutoff probe is relatively reliable then the Langmuir probe. This difference is analyzed to be intrinsic since it cames from the inevitable error such as manufacturing of probe tip. From this study, we sure that it is good decision to choose cutoff probe as repeatable measurement independent with intrinsic human factor.

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Measurement of electron density of atmospheric pressure Ar plasma jet by using Michelson interferometer

  • Lim, Jun-Sup;Hong, Young June;Choi, Eun Ha
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.195.1-195.1
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    • 2016
  • Currently, as Plasma application is expanded to the industrial and medical industrial, low temperature plasma applications became important. Especially in medical and biology, many researchers have studied about generated radical species in atmospheric pressure low temperature plasma directly adapted to human body. Therefore, so measurement their plasma parameter is very important work and is widely studied all around world. One of the plasma parameters is electron density and it is closely relative to radical production through the plasma source. some kinds of method to measuring the electron density are Thomson scattering spectroscopy and Millimeter-wave transmission measurement. But most methods have very expensive cost and complex configuration to composed of experiment system. We selected Michelson interferometer system which is very cheap and simple to setting up, so we tried to measuring electron density by laser interferometer with laser beam chopping module for measurement of temporal phase difference in plasma jet. To measuring electron density at atmospheric pressure Ar plasma jet, we obtained the temporal phase shift signal of interferometer. Phase difference of interferometer can occur because of change by refractive index of electron density in plasma jet. The electron density was able to estimate with this phase difference values by using physical formula about refractive index change of external electromagnetic wave in plasma. Our guiding laser used Helium-Neon laser of the centered wavelength of 632 nm. We installed chopper module which can make a 4kHz pulse laser signal at the laser front side. In this experiment, we obtained more exact synchronized phase difference between with and without plasma jet than reported data at last year. Especially, we found the phase difference between time range of discharge current. Electron density is changed from Townsend discharge's electron bombardment, so we observed the phase difference phenomenon and calculated the temporal electron density by using phase shift. In our result, we suggest that the electron density have approximately range between 1014~ 1015 cm-3 in atmospheric pressure Ar plasma jet.

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Laser Diagnostic in a Plasma Display Panel Discharge Cell

  • Choi, Young-Wook
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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    • pp.21-22
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    • 2000
  • Laser diagnostic method in a plasma display discharge cell was introduced. The information of electric field, potential and electron temperature et al. in the surface of plasma display panel can be measured using laser induced fluorescence spectroscopy. However, because of the very small discharge dimension of ${\sim}$ 100 ${\mu}m$, the measurement attempt has almost not been performed. In this paper, the direct measurement possibility of the parameters and the recent work of electric field measurement are demonstrated in the plasma display panel.

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Fast Measurement using Wave-Cutoff Method

  • 서상훈;나병근;유광호;장홍영
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.30-30
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    • 2011
  • The wave-cutoff tool is a new diagnostic method to measure electron density and electron temperature. Most of the plasma diagnostic tools have the disadvantage that their application to processing plasma where toxic and reactive gases are used gives rise to many problems such as contamination, perturbation, precision of measurement, and so on. We can minimize these problems by using the wave-cutoff method. Here, we will present the results obtained through the development of the wave-cutoff diagnostic method. The frequency spectrum characteristics of the wave-cutoff probe will be obtained experimentally and analyzed through the microwave field simulation by using the CST-MW studio simulator. The plasma parameters are measured with the wave-cutoff method in various discharge conditions and its results will be compared with the results of Langmuir probe. Another disadvantage is that other diagnostic methods spend a long time (~ a few seconds) to measure plasma parameters. In this presentation, a fast measurement method will be also introduced. The wave-cutoff probe system consists of two antennas and a network analyzer. The network analyzer provides the transmission spectrum and the reflection spectrum by frequency sweeping. The plasma parameters such as electron density and electron temperature are obtained through these spectra. The frequency sweeping time, the time resolution of the wave-cutoff method, is about 1 second. A short pulse with a broad band spectrum of a few GHz is used with an oscilloscope to acquire the spectra data in a short time. The data acquisition time can be reduced with this method. Here, the plasma parameter measurement methods, Langmuir probe, pulsed wave-cutoff method and frequency sweeping wave-cutoff method, are compared. The measurement results are well matched. The real time resolution is less than 1 ?sec. The pulsed wave-cutoff technique is found to be very useful in the transient plasmas such as pulsed plasma and tokamak edge plasma.

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Investigation of an Infrared Temperature Measurement System for Thermal Safety Verification of Plasma Skin Treatment Devices

  • Choi, Jong-ryul;Kim, Wookeun;Kang, Bongkeun;Song, Tae-Ha;Baek, Hee Gyu;Han, Yeong Gil;Park, Jungmoon;Seo, Soowon
    • Current Optics and Photonics
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    • 제1권5호
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    • pp.500-504
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    • 2017
  • In this paper, we developed a temperature measurement system based on an infrared temperature imaging module for thermal safety verification of a plasma skin treatment device (PSTD). We tested a pilot product of the low-temperature PSTD using the system, and the temperature increase of each plasma torch was well-monitored in real-time. Additionally, through the approximation of the temperature increase of the plasma torches, a certain limitation of the plasma treatment time on skin was established with the International Electrotechnical Commission (IEC) guideline. We determined an appropriate plasma treatment time ($T_{Safe}$ < 24 minutes) using the configured temperature measurement system. We believe that the temperature measurement system has a potential to be employed for testing thermal safety and suitability of various medical devices and industrial instruments.

연속 대기압 플라즈마를 처리한 폴리에스테르 섬유의 표면 특성 (Surface-Properties of Poly(Ethylene Terephthalate) Fabric by In-line Atmospheric Plasma Treatments)

  • 권일준;박성민;구강;송병갑;김종원
    • 한국염색가공학회지
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    • 제19권4호
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    • pp.38-46
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    • 2007
  • Surface properties of the plasma treated fabric were changed while maintaining its bulk properties. Surface of plasma treated fabric take charge of enhanced adhesion by surface etching, surface activity. The water repellency coating Poly(Ethylene Terephthalate) fabric was treated with atmospheric pressure plasma using various parameters such as Argon gas, treatment time, processing power. Morphological changes by atmospheric pressure plasma treatment were observed using field emmission scanning electron microscopy(FE-SEM) and the zeta-potential measurement, contact angle measurement equipment. At the atmospheric pressure plasma treatment time of 150 sec, the power of 800W, the best wettability and peel strength were obtained. And we confirmed the possibility of industrial application by using atmospheric plasma system.

자화된 플라즈마 내에서의 단분산 입자의 하전량 특정 (Measurement of Monodisperse Particle Charging in Unmagnetized and Magnetized Plasmas)

  • 한장식;안강호;김곤호
    • 반도체디스플레이기술학회지
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    • 제1권1호
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    • pp.35-40
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    • 2002
  • Understanding of charging properties of a small particle is necessary to control the particle contamination and to improve productivity of the electronic device in the plasma aided semiconductor manufacturing processes. In this study, the effects of both magnetic field and particle size on the charging properties are experimentally investigated in collisional dusty plasmas. The experiments carried out in the system consisted of a monodisperse particle generation system, a DC magnetized plasma generation system and a charge measurement system. The plasma chamber is made of cross-shape Pyrex surrounded by magnetic bucket (composed of 12 permanent magnetic bar) to confine the plasma. DC magnetic field up to 250G are applied to the plasma zone by external magnetic coil. Previous work shows the charging effect clearly increase with increasing the size of the particle and plasma density, as it was expected.

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A selective Assay To Measure Antioxidant Capacity in Both The Aqueous and Lipid Compartments of Plasma

  • Giancarlo Aldini;Yeum, Kyung-Jin;Robert. M. Russel;Norman I. Krinsky
    • Nutritional Sciences
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    • 제6권1호
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    • pp.12-19
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    • 2003
  • The measurement of the total antioxidant capacity (TAC) of human plasma has been widely applied in nutritional science, for example to evaluate the antioxidant contribution of dietary components and to study, although indirectly, the bioavailability of dietary antioxidants. Several methods have been proposed for the measurement of TAC, most of them based on the ability of plasma to withstand the oxidative damage induced by aqueous radicals. Although plasma contains both hydrophilic and lipophilic antioxidants that interact through extensive cross-talk in most of the methods employed for the TAC measurement, the hydrophilic antioxidants such as ascorbic acid, uric acid, and protein thiols mainly contribute to the total antioxidant plasma capacity (almost 70%) while lipophilic antioxidants embedded in the lipoproteins (carotenoids, a-tocopherol, ubiquino1-10) participate only in a negligible amount (less than 5%). The present paper reviews the analytical methods used to assess the TAC and in particular focuses on new approaches that are capable of distinguishing the antioxidant capacity of both the aqueous and lipid compartments of plasma. The general principle of the method as well as some in vitro and ex vivo applications will be discussed within the text.

플라즈마 파동의 분산관계 측정에 관한 연구 (Measurement of Dispersion Relation of Plasma Wave)

  • 정중현;이종규
    • 수산해양기술연구
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    • 제33권3호
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    • pp.248-258
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    • 1997
  • The analytical solutions of the Fraunhofer Diffraction(FD) theory and the principle for measurement of the dispersion relation of plasma wave is presented. Especially, the method for measurement of low-frequency wave is discussed. The wavenumbers of the density fluctuations are obtained from the curve fitting between the expremental FD profile and theoretical one for each frequency component. In measurement of the wavenumber of the low -frequency region, the information of the wavenumber is easily obtained from the ratio of the intensity at = 0 to the intensity at =0.5. The millimeter wave FD apparatus was designed to measure low-frequency density fluctuations. The determined wavenumbers are in the range of =0.1~ 1.0cm. Thus, the millimeter wave FD method was shown to be useful for the measurement of low-frequency density fluctuations, which are impossible to be measured by using a convention. Thomson scattering. The obtained dispersion relations will be useful information for plasma waves.

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Atmospheric Plasma Spray코팅을 이용한 Yttrium계 소재의 내플라즈마성 및 세정 공정에 관한 연구 (A Study on Plasma Corrosion Resistance and Cleaning Process of Yttrium-based Materials using Atmospheric Plasma Spray Coating)

  • 권혁성;김민중;소종호;신재수;정진욱;맹선정;윤주영
    • 반도체디스플레이기술학회지
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    • 제21권3호
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    • pp.74-79
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    • 2022
  • In this study, the plasma corrosion resistance and the change in the number of contamination particles generated using the plasma etching process and cleaning process of coating parts for semiconductor plasma etching equipment were investigated. As the coating method, atmospheric plasma spray (APS) was used, and the powder materials were Y2O3 and Y3Al5O12 (YAG). There was a clear difference in the densities of the coatings due to the difference in solubility due to the melting point of the powdered material. As a plasma environment, a mixed gas of CF4, O2, and Ar was used, and the etching process was performed at 200 W for 60 min. After the plasma etching process, a fluorinated film was formed on the surface, and it was confirmed that the plasma resistance was lowered and contaminant particles were generated. We performed a surface cleaning process using piranha solution(H2SO4(3):H2O2(1)) to remove the defect-causing surface fluorinated film. APS-Y2O3 and APS-YAG coatings commonly increased the number of defects (pores, cracks) on the coating surface by plasma etching and cleaning processes. As a result, it was confirmed that the generation of contamination particles increased and the breakdown voltage decreased. In particular, in the case of APS-YAG under the same cleaning process conditions, some of the fluorinated film remained and surface defects increased, which accelerated the increase in the number of contamination particles after cleaning. These results suggest that contaminating particles and the breakdown voltage that causes defects in semiconductor devices can be controlled through the optimization of the APS coating process and cleaning process.