• Corrosion Science and Technology
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• v.9 no.1
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• pp.8-11
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• 2010

During PEO (plasma-electrolytic-oxidation) treatment of titanium, the relationship between the thickness of oxide film and the measured electrical information was investigated. A simple real time monitoring method based on the electrical information being gathered during PEO treatment is proposed. The proposed method utilizes the current flowing from a high frequency voltage source to calculate the resistance of an oxide film, which is converted into the thickness of an oxide film. This monitoring method can be implemented in PEO system in which an oxide film is grown by constant or pulsed voltage/current sources.

• Applied Science and Convergence Technology
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• v.23 no.3
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• pp.145-150
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• 2014

MgO thin films were deposited by internal ICP-assisted reactive-magnetron sputtering with bipolar pulse bias on a substrate to suppress random arcs. Mg is reactively sputtered by a bipolar pulsed DC power of 100 kHz into ICP generated by a dielectrically shielded internal antenna. At a mass flow ratio of $Ar/O_2$ = 10 : 2 and an ICP/sputter power ratio of 1 : 1, optimal film properties were obtained (a powder-like crystal orientation distribution and a RMS surface roughness of approximately 0.42 nm). A bipolar pulse substrate bias at a proper frequency (~a few kHz) prevented random arc events. The crystalline preferred orientations varied between the (111), (200) and (220) orientations. By optimizing the plasma conditions, films having similar bulk crystallinity characteristics (JCPDS data) were successfully obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.612-615
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• 2000

The etch rate of $SiO_2$ in Enhanced - Inductive Coupled Plasma (E-ICP) and CW-ICP systems are investigated. As addition of $O_2$ to $CF_4$ gas increases oxide etch rate, E-ICP etching shows the highest etch rate (about 6000A) at an optimized condition with 30% $O_2$ in $CF_4$ 70Hz at the modulation frequency of 70Hz. E-ICP also shows better etch profile than CW-ICP.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2190-2192
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• 2005

Discharge of the flat lamp lighting source research are requested very much. For improving brightness, life time, efficiency of flat lamp, plasma diagnosis of the flat lamp lighting source to understand property of lighting source is very important. distance of discharge electrode is 5.5mm and width is 16.5mm, we measured electron temperature and electron density measured with single langmuir probe in flat lamp. we tested the discharge from 100 Torr to 300 Torr pressure. the Pulse is rectangular pulse with frequency 20kHz and Duty ratio 20%. Resultly, electron temperature decreases and electron density increase as increase the gas pressure and electron temperature decreases and electron density increase as increase the voltage.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1732-1734
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• 2003

An MgO thin film sputtering system for the PDP (Plasma Display Panel) applications has been developed. This system was manufactured with a vertical In-Line type of 42 inch, which has the length of 520 mm and the width of 900 mm. A reactive magnetron discharge for this sputtering was generated using an unipolar pulsed power supply which has functions of constant voltage (Max. 500 V) and current (Max. 15 A) control, frequency of $10{\sim}100$ kHz and duty ratio of $10{\sim}60$ %. The experiment was conducted under various conditions : $3{\sim}10$ mTorr of pressure, the ratio of $O_2$/Ar = $0.1{\sim}0.5$, 50 % of duty and power of $0.5{\sim}1.7$ kW. From the experiment, the deposition rate of a static state and a moving state were measured to be about 45 nm/min and 6 nm m/min at the distance of 50 mm between the target and the substrate, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.452-455
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• 2000

Diamond thin films were synthesized on WC-Co substrate at various experimental parameters using 13.56MHz RF PACVD(radio frequency plasma-assisted chemical vapor deposition). In order to increase the nucleation density, the WC-Co substrate was polished with 3$\mu\textrm{m}$ diamond paste. And the WC-Co substrate was pretreated in HNO$_3$: H$_2$O = 1:1 and O$_2$ plasma. In H$_2$-CH$_4$gas mixture, the crystallinity of thin film increased with decreasing CH$_4$concentration at 800W discharge power and 20torr reaction pressure. In H$_2$-CH$_4$-O$_2$gas mixture, the crystallinity of thin film increased with increasing O$_2$concentration at 800W discharge power, 20torr reaction pressure and 4% CH$_4$concentration.

• Journal of Electrical Engineering and Technology
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• v.1 no.2
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• pp.216-225
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• 2006

This paper presents a new circuit topology of DC busline switch and snubbing capacitor-assisted full-bridge soft-switching PWM inverter type DC-DC power converter with a high frequency link for low voltage large current applications as DC feeding systems, telecommunication power plants, automotive DC bus converters, plasma generator, electro plating plants, fuel cell interfaced power conditioner and arc welding power supplies. The proposed power converter circuit is based upon a voltage source-fed H type full-bridge high frequency PWM inverter with a high frequency transformer link. The conventional type high frequency inverter circuit is modified by adding a single power semiconductor switching device in series with DC rail and snubbing lossless capacitor in parallel with the inverter bridge legs. All the active power switches in the full-bridge inverter arms and DC busline can achieve ZVS/ZVT turn-off and ZCS turn-on commutation operation. Therefore, the total switching losses at turn-off and turn-on switching transitions of these power semiconductor devices can be reduced even in the high switching frequency bands ranging from 20 kHz to 100 kHz. The switching frequency of this DC-DC power converter using IGBT power modules is selected to be 60 kHz. It is proved experimentally by the power loss analysis that the more the switching frequency increases, the more the proposed DC-DC converter can achieve high performance, lighter in weight, lower power losses and miniaturization in size as compared to the conventional hard switching one. The principle of operation, operation modes, practical and inherent effectiveness of this novel DC-DC power converter topology is proved for a low voltage and large current DC-DC power supplies of arc welder applications in industry.

• Applied Chemistry for Engineering
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• v.33 no.1
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• pp.38-43
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• 2022

The effect of introducing oxygen functional groups by oxygen plasma treatment of activated carbon on adsorption properties of cesium ions was investigated. During the oxygen plasma treatment, the frequency, power, and oxygen gas flow rates were fixed at 100 kHz, 80 W, and 60 sccm, respectively, while the reaction time was varied. Under the experimental conditions, the amount of cesium ion adsorption increased as the content of oxygen groups on C-O-C and O=C-O bonds increased when the reaction time with oxygen gas was 10 minutes. However, when the reaction time increased to 15 minutes, the oxygen functional group content decreased resulting in the decrease of the adsorbed cesium ion amount. On the other hand, unlike the oxygen content of the surface-treated activated carbon, the specific surface area and pore properties were hardly affected by the oxygen plasma reaction time. As a result, the oxygen plasma-treated activated carbon improved the cesium ion removal rate by up to 97.3% compared to that of the untreated activated carbon. This is considered to be due to the content of oxygen groups on C-O-C and O=C-O bonds introduced on the surface of the activated carbon through oxygen plasma treatment.

• Korean Journal of Community Nutrition
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• v.4 no.2
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• pp.186-193
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• 1999

Recent epidemiologic and clinical students have shown that plasma cholesterol and triglyceride levels are independent risk factors for coronary heart disease. However, there is not much data on the characteristics of anthropometry and lipid profiles of hypercholesterolemia patients with hypertiglyceridemia. In this study, 112 hypercholesterolemic subjects$(T.C{\ge}240mg/dl)$ were divided into two groups by their plasma triglyceride levels. We compared the anthropometric measurements and lipid profiles of the subjects between the two groups : the simples hypercholesterolemic group(SHC, TG<200mg/dl) and the combined hypercholesterolemic group$(CHC, TG{\ge}250mg/dl)$. The distribution of the subjects into the SHC and CHC groups was 36.6% and 47.3%, respectively. The frequency of the CHC patients decreased with age. The subjects in this group had higher weight, BMI, HWR, cricumferences of mid arm, waist, hip and thigh, and skinfold thicknesses of biceps and triceps than those of the SHC subjects. The difference of plasma total cholesterol level was mainly due to the difference of VLDL-C levels. These differences resulted in the CHC subjects having higher atherogenic indexes and T-C/HDL-C ratios than those of the SHC subjects. Also, the former had higher Apo-B and insulin levels than those the latter. However, blood pressure, fasting blood glucose and HDL-C levels were not significantly different between the two groups. These results suggest that hypercholesterolemic patients with hypertriglyceridemia have riskier lipid profiles for CHD than those of patients with normal triglyceridemia. They also indicate that CHC is closely associated with glucose resistance syndrome(obesity, hyperglycemia, hyperinsulinemia and hypertriglyceridemia), and more prevalent in young people.

• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.51-55
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• 2011

We investigated the etching characteristics of zinc oxide (ZnO) thin films deposited by the atomic layer deposition method. The gases of the inductively coupled plasma chemistry consisted of $Cl_2$, Ar, and $O_2$. The maximum etch rate was 40.3 nm/min at a gas flow ratio of $Cl_2$/Ar=15:5 sccm, radio-frequency power of 600 W, bias power of 200 W, and process pressure of 2 Pa. We also investigated the plasma induced damage in the etched ZnO thin films using X-ray diffraction (XRD), atomic force microscopy and photoluminescence (PL). A highly oriented (100) peak was present in the XRD spectroscopy of the ZnO samples. The full width at half maximum value of the ZnO sample etched using the $O_2/Cl_2$/Ar chemistry was higher than that of the as-deposited sample. The roughness of the ZnO thin films increased from 1.91 nm to 2.45 nm after etching in the $O_2/Cl_2$/Ar plasma chemistry. Also, we obtained a strong band edge emission at 380 nm. The intensities of the peaks in the PL spectra from the samples etched in all of the chemistries were increased. However, there was no deep level emission.