• Journal of the Korean institute of surface engineering
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• v.40 no.5
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• pp.209-213
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• 2007

Change of the plasma volume by pulse frequency in a bipolar pulsed DC unbalanced magnetron sputtering was investigated. As increasing the frequency at off duty 10% and at a constant power, the plasma volume was lengthened in vertical direction from the AZO target. When there is an electrically floated substrate, the vertical length of the plasma area was not affected by the pulse frequency. Instead, the diameter of the plasma volume was increased. We found that the temperature rise of a substrate was affected by the pulse frequency, too. As increasing it, the maximum temperature rise of a glass substrate was decreased from $132^{\circ}C\;to\;108^{\circ}C$.

• Proceedings of the KIEE Conference
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• summer
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• pp.1205-1207
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• 2004

AC plasma power supply is used to control a ozone generator and a air pollution gas. AC plasma power supply is composed of power semiconductor switch devices and control board adapted SHE(Selected Harmonic Elimination) PWM method. AC plasma power supply with sinusoidal VVVF(variable voltage and variable frequency) is realized. Its output voltage range is from 0 [V] to 20[kV] and output frequency range is from 8[kHz] to 20[kHz]. Using proposed system, AC high voltage and high frequency discharge is tested in the DBD(dieletric barrier discharge) reactor, and the space distribution of a its non-thermal plasma is observed. In spite of the increasement of voltage and frequency, the proposed system have a stable operation characteristics. It is verified by the experimental results.

• Journal of fish pathology
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• v.33 no.1
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• pp.91-95
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• 2020

Fish bacterial diseases have spread and caused serious problem for cultured marine fish in Korea. The important bacterial disease affecting mariculture such as olive flounder (Paralichthys olivaceus) are caused by Edwardsiella tarda, Vibrio scophthalmi and Streptococcus parauberis. For the bacterial disease protection in aquaculture industry, the water treatment is needed in aquaculture system. During the last decades atmospheric pressure non-thermal plasma in contact with liquids have received a lot of attention of environmental and medical application. In this study, we determined the disinfectant effect in seawater and three major fish bacterial disease pathogens by using low frequency plasma treatment. Three fish bacteria (E. tarda, V. schophthalmi, S. parauberis) were not detected within 16 min, 150 min and 270 min of 20 L, 500 L and 1 ton seawater post low frequency plasma treatment, respectively. Three major fish bacterial disease pathogens were not detected within 2 min after the low frequency plasma treatment, suggesting that the low frequency plasma possess disinfectant effectiveness.

• Proceedings of the KIPE Conference
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• 2006.06a
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• pp.470-474
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• 2006

This dissertation discuses about a ferrite core plasma source using low operating frequency without sputtering problem by the stored electric field. Compared with the conventional RF power system with 13.56MHz switching frequency, the proposed plasma power system is only separated at 400kHz, so that it makes possible to use of low cost switching elements, PWM control and soft switching. Moreover, it could improve the coupling efficiency for plasma and antenna by using the ferrite core in order to transfer the energy of the load This dissertation tried to analyze new plasma generation method for the plasma generation system by modeling the plasma load and grafting the concept of impedance matching in order to interpret it with the formula This dissertation verified the ferrite core inductive coupling plasma source authorized for 400kHz of low frequency power by applying to the semi-conductor ash process thru the measurement of ash capacity and uniformed plasma distribution on the actual wafer.

• Korean Journal of Community Nutrition
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• v.3 no.5
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• pp.685-694
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• 1998

This cross-sectional study was conducted to describe the changes of plasma cardiovascular disease(CVD) risk factors in Korea. Overnight fasting plasma levels of total cholesterol, high density lipoprotein(HDL)-cholesterol, triacylglycerol and glucose were analyzed. Blood pressure and anthropometric data were also measured. Health practice factors such as smoking status, alcohol consumption and frequency fo exercise were evaluated by a self-administered questionnaire. Questions regarding dietary habits and food preferences were also asked. Seventy eight percent of the subjects had more than one CVD risk factor. Plasma total cholesterol, triacylglycerol, and fasting blood glucose were significantly increased according to the subjects body mass index$(kg/m^2$, BMI), whereas HDL-cholesterol, low density lipoprotein(LDL)-cholesterol and blood pressure showed no significant differences with BMI. Current smokers had significantly high plasma total cholesterol, LDL-cholesterol and triacylglycerol levels. Alcohol consumption significantly increased plasma total cholesterol and fasting blood sugar, but regular exercise had no effects on the plasma CVD risk factors. Overeating and frequency of fast food consumption were positively correlated with the CVD risk score, whereas intake of grains, meats and vegetables were negatively correlated with that score. A stepwise multiple regression analysis was performed to examine the effects of specific dietary factors on plasma lipid levels. For plasma total cholesterol level, the frequency of fast food intake explained 8% of the variance, followed by habitual overeating, frequency of grain intake and high cholesterol food intake(Model $R^2$=22.4%). For plasma triacylglycerol level, preference of oily foods accounted for 7.5% of the variance, followed by eating breakfast, preference of fruit and frequency of grain intake(Model $R^2$=22.0%). The findings suggest that intervention programs to reduce the risk of CVD should focus on health practice through reducing BMI, smoking cessation and moderate or no alcohol drinking. Moreover, desirable dietary habits such as eating breakfast, not overeating and reduced intake of fast food may improve CVD risk.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.523-523
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• 2012

As the wafer geometric requirements continuously complicated and minutes in tens of nanometers, the expectation of real-time add-on sensors for in-situ plasma process monitoring is rapidly increasing. Various industry applications, utilizing plasma impedance monitor (PIM) and optical emission spectroscopy (OES), on etch end point detection, etch chemistry investigation, health monitoring, fault detection and classification, and advanced process control are good examples. However, process monitoring in semiconductor manufacturing industry requires non-invasiveness. The hypothesis behind the optical monitoring of plasma induced ion current is for the monitoring of plasma induced charging damage in non-invasive optical way. In plasma dielectric via etching, the bombardment of reactive ions on exposed conductor patterns may induce electrical current. Induced electrical charge can further flow down to device level, and accumulated charges in the consecutive plasma processes during back-end metallization can create plasma induced charging damage to shift the threshold voltage of device. As a preliminary research for the hypothesis, we performed two phases experiment to measure the plasma induced current in etch environmental condition. We fabricated electrical test circuits to convert induced current to flickering frequency of LED output, and the flickering frequency was measured by high speed optical plasma monitoring system (OPMS) in 10 kHz. Current-frequency calibration was done in offline by applying stepwise current increase while LED flickering was measured. Once the performance of the test circuits was evaluated, a metal pad for collecting ion bombardment during plasma etch condition was placed inside etch chamber, and the LED output frequency was measured in real-time. It was successful to acquire high speed optical emission data acquisition in 10 kHz. Offline measurement with the test circuitry was satisfactory, and we are continuously investigating the potential of real-time in-situ plasma induce current measurement via OPMS.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.528-528
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• 2012

Recently, atmospheric pressure plasmas attract lots of interests for the useful applications such as surface modification and bio-medical treatment. In this study, a particle-in-cell Monte Carlo collision (PIC-MCC) simulation was adopted to investigate the discharge characteristics of a planar micro dielectric barrier discharge (DBD) with a driving frequency from 13.56 MHz to 162.72 MHz and with a gap distance of 80 micrometers. The variation of frequency, in the change in the electron energy probability function (EEPF). Through the relation between the ion trajectories and the frequency, results in the change of EEPFs is achievable with the turning point of frequency mode. Therefore, it is possible to categorize the efficient operation range of DBDs for its applications by controlling the interactions between plasmas and neutral gas for the generation of preferable radicals.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.307-307
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• 2013

초고집적 회로에 적용되는 반도체 소자의critical dimension (CD)이 수 nano 사이즈로 줄어들고 있기 때문에, 다양한 물질의 식각을 할 때, 건식식각의 중요성이 더 강조되고 있다. 특히 $SiO_2$와 같은 유전체 물질을 식각할 때, plasma process induced damages (P2IDs)가 관찰되어 왔고, 이러한 P2IDs를 줄이기 위해, pulsed-time modulation plasma가 광범위하게 연구되어 왔다. Pulsed plasma는 정기적으로 radio frequency (RF) power on과 off를 반복하여 rf power가 off된 동안, 평균전자 온도를 낮춤으로써, 웨이퍼로 입사되는 전하 축적을 효과적으로 줄일 수 있다. 또한 fluorocarbon plasmas를 사용하여 $SiO_2$를 식각하기 위해 Dual-Frequency Capacitive coupled plasma (DF-CCP)도 널리 연구되어 왔는데, 이것은 기존의 방법과는 다르게 plasma 밀도와 ion bombardment energy를 독립적으로 조절 가능하다는 장점이 있어서 미세 패턴을 식각할 때 효과적이다. 본 연구에서는 Source power에는 60 MHz pulsed radio frequency (RF)를, bias power에는 2 MHz continuous wave (CW) rf power가 사용된 system에서 Ar/$C_4$ F8/$O_2$ 가스 조합으로, amorphous carbon layer (ACL)가 hard mask로 사용된 $SiO_2$를 식각했다. 그리고 source pulse의 duty ratio와 pulse frequency의 효과에 따른 $SiO_2$의 식각특성을 연구하였다. 그 결과, duty ratio의 감소에 따라 $SiO_2$, ACL의 etch rate이 감소했지만, $SiO_2$/ACL의 etch selectivity는 증가하였다. 반면에 pulse frequency의 변화에 따른 두 물질의 etch selectivity는 크게 변화가 없었다. 그 이유는 pulse 조건인 duty ratio의 감소가 전자 온도 및 전자 에너지를 낮춰 $C_2F8$가스의 분해를 감소시켰으며, 이로 인해 식각된 $SiO_2$의 surface와 sidewall에 fluorocarbon polymer의 형성이 증가하였기 때문이다. 또한 duty ratio의 감소에 따라 etch selectivity뿐만 아니라 etch profile까지 향상되는 것을 확인할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.234-234
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• 2011

Electron-neutral collision frequency is one of the important parameters in the plasma physics and in industrial plasma engineering. We can understand the momentum, energy, and charge transport properties of the plasma using electron-neutral collision frequency.[1] The wave-cutoff method is a diagnostic method for the electron density measurement, but the cutoff peak value depends on gas pressure. The wave-cutoff signal becomes unclear as increasing gas pressure. The reason of pressure dependence is that the electron-neutral collision disturbs electron motion so that microwave can propagate through plasma at plasma frequency.[2] Using the pressure dependence of wave-cutoff method we can find the electron-neutral collision frequency. At first we tried to confirm this method using well known gas such as Ar. The cutoff signal decrease as increasing gas pressure (the simulation result). The wave-cutoff signal is unclear at a gas pressure of 500 mTorr. (electron density $1.0{\times}10^{10}/cm^3$, electron temperature 1.7 eV, electron -neutral collision frequency~1 GHz). In this condition, the electron-neutral collision frequency is closed to the wave-cutoff frequency.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.510-515
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• 2001

It was first time that low frequency R.F. derived plasma enhanced MOCVD with frimethylborate precursor was used to fabricate a new ternary compound $BO_{x}$ $N_{y}$ . The formation of BON molecule was resulted from nitrogen nitrifying B-O, and forming the angular molecule structure proved by XPS and FT-IR results. The relationship between hardness and film thickness was studied. An thickness-independent hardness was fond about 10 GPa. The empirical calculation of band-gap and UV test result showed that our deposited $BO_{x}$ $N_{y}$ thin film was semiconductor material with 3.4eV of wide band gap. The electrical conductivity, $4.8$\times$10^{-2}$ /($\Omega$.cm)$^{-1}$ also confirmed that $BO_{x}$ $N_{y}$ has a semiconductor property. The roughness detected from the as-grown films showed that there was no serious bombarding effect due to anion in the plasma occurring in the RF frequency derived plasma.