• Journal of Welding and Joining
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• v.16 no.1
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• pp.77-87
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• 1998

This paper deals with the effect of laser welding parameters on the weld formation. Thin steels for automotive application were prepared so as to be welded with high power carbon dioxide laser system. Major process parameters were position of focus and travel speed. The effect of shielding gas was also discussed by employing the high speed photometry. Test results showed that the optimal position of focus varied in accordance with the joint configuration; bead-on-plate, butt or lap welding. It was recommended that the position of focus for the lap welding be located at slightly inner part of the material to be welded. In this case, however, it was noticeable that the weld penetration ratio, d/t$_{0}$ dropped drastically at the critical region. Results also demonstrated that both the bead width and penetration reduced as the travel speed increased. The penetration ratio showed two distinct regions; stabilized zone at the lower range of the travel spped and sudden drop zone at the higher range of travel speed. Lower limit of the penetration for acceptable weld was proved to be about 90% of the parent metal thickness based on the physical properties of the weld. Mixed gas application for both the shielding of molten metal and laser induced plasma control was recommended as far as the penetration was concerned.d.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.68-68
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• 2011

As feature size is smaller, new technology are needed in semiconductor factory such as gap-fill technology for sub 100nm, development of ALD equipment for Cu barrier/seed, oxide trench etcher technology for 25 nm and beyond, development of high throughput Cu CMP equipment for 30nm and development of poly etcher for 25 nm and so on. We are focus on gap-fill technology for sub-30nm. There are many problems, which are leaning, over-hang, void, micro-pore, delaminate, thickness limitation, squeeze-in, squeeze-out and thinning phenomenon in sub-30 nm gap fill. New gap-fill processes, which are viscous oxide-SOD (spin on dielectric), O3-TEOS, NF3 Based HDP and Flowable oxide have been attempting to overcome these problems. Some groups investigated SOD process. Because gap-fill performance of SOD is best and process parameter is simple. Nevertheless these advantages, SOD processes have some problems. First, material cost is high. Second, density of SOD is too low. Therefore annealing and curing process certainly necessary to get hard density film. On the other hand, film density by Flowable oxide process is higher than film density by SOD process. Therefore, we are focus on Flowable oxide. In this work, dielectric film were deposited by PECVD with TSA(Trisilylamine - N(SiH3)3) and NH3. To get flow-ability, the effect of plasma treatment was investigated as function of O2 plasma power. QMS (quadruple mass spectrometry) and FTIR was used to analysis mechanism. Gap-filling performance and flow ability was confirmed by various patterns.

• Korean Journal of Optics and Photonics
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• v.12 no.2
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• pp.103-108
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• 2001

In this paper, we designed and made the scanned point detecting system for 3-dimensional measurement of the light emitted from plasma display panel (PDP) , and we measured and analyzed 3-dimensional light emitted from a real PDP by using this scanned point detecting system. The scanned point detecting system has a point detector with a pinhole. The light emitted from the source at the in-focus position can pass through the pinhole and be collected by detector. The light from other sources at outof-focus positions is focused at points in front of or behind the pinhole, and thus it is intercepted by the pinhole. Therefore, we can detect light information from a particular point of a PDP cell of 3-dimensional structure. We know the electric field distribution inside the PDP cell from the 3-dimensionallight intensity distribution measured by using the scanned point detecting system. As the Z axial measurement increases, the intensity of light detected increases and intensity of light detected on the inside edge of the ITa electrode is larger than outside edge of the ITa eletrode and gap of the ITa electrodes. Also, as the measurement point moves from one barrier rib to another, the detected light is weaker near to the barrier ribs than at the center between the barrier ribs. The emitted light is concentrated at the center between barrier ribs. ribs.

• Korean Journal of Poultry Science
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• v.21 no.2
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• pp.139-150
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• 1994

Egg cholesterol has been a hot issue in respect of it's effect on health and diseases in human. There is a general recognition that the cholesterol from eggs is similar to that from the other dietary sources in its biochemical functions. Many evidences show that egg yolk increased plasma cholesterol levels at an average rate of 2.3 mg /100 rnL plasma for every 100 mg cholesterol consumed. The elevation of plasma cholesterol could, however, be altered by various dietary factors such as ratios of polyunsaturated fatty acids and saturated fatty acids. Blood cholesterol levels of Korean adults have been raised up to, on the average, 193 and 187 mg /100 mL plasma for men and women, respectively, from 167/5 mg /100 mL in 1980. Furthermore, proportion of hypercholesterolemics(> 210 mg /dL) has been increased up to 23% of the population. These changes in blood cholesterol levels are attributed to the changes of dietary patterns, suggesting the arguement that Koreans are insensitive to changes of blood cholesterol is not right. Egg cholesterol levels have never been successfully reduced to any significant levels even with tremendous amounts of efforts made during last decades. The alternative and the best way to control blood cholesterol level originating from egg consumption appeares to enrich egg fat with omega-3 series fatty acids. Ingestion of the fatty acid group has specific functions to reduce hypertension and prevent various types of cancer as well as to reduce blood cholesterol. Another way to reduce egg cholesterol directly is to produce smaller egg yolk without reducing whole egg size since cholesterol is located only in the yolk. It is important to keep faith with consumers by providing correct informations on eggs, meanwhile efforts need to focus on to improve the quality of eggs as one of the best protein food items.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• Nuclear Engineering and Technology
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• v.31 no.5
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• pp.512-521
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• 1999

A feasibility study was performed to design an epithermal neutron beam for BNCT using the neutron of 2.45 MeV on the average produced from $^2H(d,n)^3$He reaction induced by plasma focus in the z-pinch instead of the conventional accelerator-based $^3H(d, n)^4$He neutron generator. Flux and spectrum were analyzed to use these neutrons as the neutron source for BNCT. Neutronic characteristics of several candidate materials in this neutron source were investigated Using MCNP Code, and $^7LiF$ ; 40%Al + 60%$AIF_3$, and Pb Were determined as moderator, filter, and reflector in an epithermal neutron beam design for BNCT, respectively. The skin-skull-brain ellipsoidal phantom, which consists of homogeneous regions of skin-, bone-, or brain-equivalent material, was used in order to assess the dosimetric effect in brain. An epithermal neutron beam design for BNCT was proposed by the repeated work with MCNP runs, and the dosimetric properties (AD, AR, ADDR, and Dose Components) calculated within the phantom showed that the neutron beam designed in this work is effective in tumor therapy. If the neutron source flux is high enough using the z-pinch plasma, BNCT using the neutron source produced from $^2H(d,n)^3$He reaction will be very feasible.

• Journal of the Korean Vacuum Society
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• v.11 no.2
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• pp.113-118
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• 2002

We developed engineering methods to control gas flow in a plasma reactor in order to achieve good etch depth uniformity for large area GaAs etching. Finite difference numerical method was found quite useful for simulation of gas flow distribution in the reactor for dry etching of GaAs. The experimental results in $BCl_3/N_2/SF_6/He$ ICP plasmas confirmed that the simulated data fitted very well with real data. It is noticed that a focus ring could help improve both gas flow and etch uniformity for 150 mm diameter GaAs plasma etch processing. The simulation results showed that optimization of clamp configuration could decrease gas flow uniformity as low as $\pm$ 1.5% on an 100 mm(4 inch) GaAs wafer and $\pm$ 3% for a 150 m(6 inch) wafer with the fixed reactor and electrode, respectively. Comparison between simulated gas flow uniformity and real etch depth distribution data concluded that control of gas flow distribution in the chamber would be significantly important in order or achieve excellent dry etch uniformity of large area GaAs wafers.

• Current Optics and Photonics
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• v.1 no.3
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• pp.221-227
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• 2017

To apply a square-shaped beam homogenizer to laser shock peening, it should be designed with a long working distance and by considering metal targets with various shapes and textures. For long working distances, a square-shaped beam homogenizer with a long depth of focus is required. In the range of working distance, the laser beam is required to have not only high efficiency but high uniformity, in other words, a good peening quality is guaranteed. In this study, we defined this range as the working distance for laser shock peening. We have simulated the effect of some parameters on the working distance. The parameters include the focal length of the condenser lens, pitch size of the array lens, and plasma threshold of the metal. The simulation was performed through numerical analysis by considering the diffraction effect.

• ETRI Journal
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• v.31 no.6
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• pp.695-702
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• 2009

We propose a lens-drive unit composed of an ionic polymer-metal composite (IPMC) for an auto-focus compact camera module in cellular phones to solve the power consumption problem of voice coil motors which are widely used in commercial products. In this research, an IPMC incorporated into a lens-drive unit is designed to implement a large displacement in low-power consumption by using an anisotropic plasma treatment. Experimental results show that a camera module containing IPMCs can control and maintain the position of the lens by using proportional integral derivative control with a photo-reflective position sensor despite the non-linear actuation behavior of IPMCs. We demonstrate that the fabrication and commercialization of a lens actuator that has a large displacement and low power consumption using IPMCs is possible in the near future.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.5
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• pp.150-156
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• 2009

The removal of tiny particles adhered to surfaces is one of the crucial prerequisite for a further increase in IC fabrication, large area displays and for the process in nanotechnology. Various cleaning techniques (wet chemical cleaning, scrubbing, pressurized jets and ultrasonic processes) currently used to clean critical surfaces are limited to removal of micrometer-sized particles. Therefore the removal of sub-micron sized particles from silicon wafers is of great interest. For this purpose various cleaning methods are currently under investigation. In this paper, we report on experiments on the cleaning effect of 100nm sized fluorescence particles on silicon wafer using the plasma shockwave occurred by femtosecond laser. The plasma shockwave is main effect of femtosecond laser cleaning to remove particles. The removal efficiency was dependent on the gap distance between laser focus and surface but in some case surface was damaged by excessive laser intensity. These experiments demonstrate the feasibility of femtosecond laser cleaning using 100nm size fluorescence particles on wafer.