• Title/Summary/Keyword: plasma fluid simulation

Search Result 70, Processing Time 0.033 seconds

Characterization of Inductively Coupled Ar/CH4 Plasma using the Fluid Simulation (유체 시뮬레이션을 이용한 유도결합 Ar/CH4 플라즈마의 특성 분석)

  • Cha, Ju-Hong;Lee, Ho-Jun
    • The Transactions of The Korean Institute of Electrical Engineers
    • /
    • v.65 no.8
    • /
    • pp.1376-1382
    • /
    • 2016
  • The discharge characteristics of inductively coupled $Ar/CH_4$ plasma were investigated by fluid simulation. The inductively coupled plasma source driven by 13.56 Mhz was prepared. Properties of $Ar/CH_4$ plasma source are investigated by fluid simulation including Navier-Stokes equations. The schematics diagram of inductively coupled plasma was designed as the two dimensional axial symmetry structure. Sixty six kinds of chemical reactions were used in plasma simulation. And the Lennard Jones parameter and the ion mobility for each ion were used in the calculations. Velocity magnitude, dynamic viscosity and kinetic viscosity were investigated by using the fluid equations. $Ar/CH_4$ plasma simulation results showed that the number of hydrocarbon radical is lowest at the vicinity of gas feeding line due to high flow velocity. When the input power density was supplied as $0.07W/cm^3$, CH radical density qualitatively follows the electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density.

Analysis of Inductively Coupled Plasma using Electrostatic Probe and Fluid Simulation (정전 탐침법과 유체 시뮬레이션을 이용한 유도결합 Ar 플라즈마의 특성 연구)

  • Cha, Ju-Hong;Lee, Ho-Jun
    • The Transactions of The Korean Institute of Electrical Engineers
    • /
    • v.65 no.7
    • /
    • pp.1211-1217
    • /
    • 2016
  • Discharge characteristics of inductively coupled plasma were investigated by using electrostatic probe and fluid simulation. The Inductively Coupled Plasma source driven by 13.56 Mhz was prepared. The signal attenuation ratios of the electrostatic probe at first and second harmonic frequency was tuned in 13.56Mhz and 27.12Mhz respectively. Electron temperature, electron density, plasma potential, electron energy distribution function and electron energy probability function were investigated by using the electrostatic probe. Experiment results were compared with the fluid simulation results. Ar plasma fluid simulations including Navier-Stokes equations were calculated under the same experiment conditions, and the dependencies of plasma parameters on process parameters were well agreed with simulation results. Because of the reason that the more collision happens in high pressure condition, plasma potential and electron temperature got lower as the pressure was higher and the input power was higher, but Electron density was higher under the same condition. Due to the same reason, the electron energy distribution was widening as the pressure was lower. And the electron density was higher, as close to the gas inlet place. It was found that gas flow field significantly affect to spatial distribution of electron density and temperature.

Analysis of DC Plasma using Electrostatic Probe and Fluid Simulation (정전 탐침법과 유체시뮬레이션을 이용한 DC플라즈마 특성 연구)

  • Son, Eui-Jeong;Kim, Dong-Hyun;Lee, Ho-Jun
    • The Transactions of The Korean Institute of Electrical Engineers
    • /
    • v.63 no.10
    • /
    • pp.1417-1422
    • /
    • 2014
  • Using a parallel plate DC plasma system was prepared. Using this equipment, we investigated the basic discharge characteristics of DC argon plasma in terms of electron density, temperature, voltage and current waveforms and plasma potential. The effects of the electrode gap distance, input voltage, ballast resistance and pressure were measured using electrostatic probe. Plasma simulation using fluid approximation has been performed. External circuit effects was included in the simulation. Measured and calculated current voltage characteristics show similar tendencies.

Characterization of inductively coupled Ar/CH4 plasma using tuned single langmuir probe and fluid simulation

  • Cha, Ju-Hong;Han, Mun-Gi;Kim, Dong-Hyeon;Lee, Hae-Jun;Lee, Ho-Jun
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2015.08a
    • /
    • pp.143.1-143.1
    • /
    • 2015
  • An inductively coupled plasma source driven by 13.56MHz was prepared for the deposition of a-C:H thin film. Properties of the plasma source are investigated by fluid simulation including Navier-Stokes equations and home-made tuned single Langmuir probe. Signal attenuation ratios of the Langmuir probe at first and second harmonic frequency were 13.56Mhz and 27.12Mhz respectively. Dependencies of plasma parameters on process parameters were agreed with simulation results. Ar/CH4 plasma simulation results shown that hydrocarbon radical densities have their lowest value at the vicinity of gas feeding line due to high flow velocity. For input power density of 0.07W/cm3, CH radical density qualitatively follows electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density. The result suggest that optimization of discharge power is important for controlling deposition film quality in high density plasma sources.

  • PDF

Properties of Inductively coupled Ar/CH4 plasma based on plasma diagnostics with fluid simulation

  • Cha, Ju-Hong;Son, Ui-Jeong;Yun, Yong-Su;Han, Mun-Gi;Kim, Dong-Hyeon;Lee, Ho-Jun
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2016.02a
    • /
    • pp.210.2-210.2
    • /
    • 2016
  • An inductively coupled plasma source was prepared for the deposition of a-C:H thin film. Properties of the inductively coupled plasma source are investigated by fluid simulation including Navier-Stokes equations and home-made tuned single Langmuir probe. Signal attenuation ratios of the Langmuir probe harmonic frequency were 13.56Mhz and 27.12Mhz. Dependencies of plasma parameters on process parameters were accord with simulation results. Ar/CH4 plasma simulation results shown that hydrocarbon radical densities have their lowest value at the vicinity of gas feeding line due to high flow velocity. For input power density of 0.07W/cm3, CH radical density qualitatively follows electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density. The result suggest that optimization of discharge power is important for controlling deposition film quality in high density plasma sources.

  • PDF

Characteristics of Linear Microwave Plasma Using the Fluid Simulation and Langmuir Probe Diagnostics

  • Seo, Gwon-Sang;Han, Mun-Gi;Yun, Yong-Su;Kim, Dong-Hyeon;Lee, Hae-Jun;Lee, Ho-Jun
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2013.08a
    • /
    • pp.158.1-158.1
    • /
    • 2013
  • Microwave는 일반적으로 300 [MHz]~30 [GHz] 사이의 주파수를 가지는 전파로 1 [m] 이하의 파장을 가진다. Microwave를 이용한 플라즈마의 경우 낮은 이온 에너지, 효율적인 전자 가열, 넓은 동작압력 범위, 높은 밀도 등의 장점을 가지고 있어 PECVD(Plasma Enhanced Chemical Vapor Deposition)에 적합한 플라즈마 소스라고 할 수 있다. 또한 Microwave는 파장의 길이가 증착이 이루어지는 진공 챔버의 길이보다 매우 작기 때문에 대면적 적용성이 용이하므로 현재 많은 연구가 이루어지고 있다. 본 연구에서는 Fluid Simulation을 통해 Maxwell's equation, continuity equation, electromagnetic wave equation 등을 이용하여 Microwave의 파워 및 압력에 따른 플라즈마 parameter를 계산하고, 자체 제작한 Linear microwave plasma 장치에서 정전 탐침(Langmuir Probe)을 이용하여 플라즈마 Parameter를 측정하였다. 또한 Simulation 결과와 실험결과를 비교 분석하였다.

  • PDF

Numerical Modeling of Floating Electrodes in a Plasma Processing System

  • Joo, Junghoon
    • Applied Science and Convergence Technology
    • /
    • v.24 no.4
    • /
    • pp.102-110
    • /
    • 2015
  • Fluid model based numerical analysis is done to simulate a plasma processing system with electrodes at floating potential. $V_f$ is a function of electron temperature, electron mass and ion mass. Commercial plasma fluid simulation softwares do not provide options for floating electrode boundary value condition. We developed a user subroutine in CFD-ACE+ and compared four different cases: grounded, dielectric, zero normal electric field and floating electric potential for a 2D-CCP (capacitively coupled plasma) with a ring electrode.

Development of Virtual Integrated Prototyping Simulation Environment for Plasma Chamber Analysis and Design (VIP-SEPCAD) (플라즈마 챔버의 특성 분석 및 최적 설계를 위한 가상의 시뮬레이션 환경 개발)

  • 김헌창;설용태
    • Journal of the Semiconductor & Display Technology
    • /
    • v.2 no.4
    • /
    • pp.9-12
    • /
    • 2003
  • This paper describes a newly developed simulation environment for analysis and design of a plasma processing chamber based on first principles including complicated physical and chemical interactions of plasma, fluid dynamics of neutrals, and transport phenomena of particles. Capabilities of our simulator, named VIP-SEPCAD (Virtual Integrated Prototyping Simulation Environment for Plasma Chamber Analysis and Design), are demonstrated through a two dimensional simulation of an oxygen plasma chamber. VIP-SEPCAD can provide plasma properties such as spatiotemporal profiles of plasma density and potential, electron temperature, ion flux and energy, etc. By coupling neutral and particle transport models with a three moment plasma model, VIP-SEPCAD can also predict spatiotemporal profiles of chemically reactive species and particles exist in plasma.

  • PDF

Characterization of Linear Microwave Plasma using the Fluid Simulation (유체 시뮬레이션을 이용한 선형 마이크로웨이브 플라즈마의 특성 분석)

  • Seo, Kwon-Sang;Han, Moon-Ki;Kim, Dong-Hyun;Lee, Ho-Jun
    • The Transactions of The Korean Institute of Electrical Engineers
    • /
    • v.64 no.4
    • /
    • pp.567-572
    • /
    • 2015
  • Discharge characteristics of linear microwave plasma were investigated by using fluid simulation of 2D axis-symmetry based on finite elements method. The microwave power was 2.45 GHz TEM mode and transmitted through linear antenna. Resistive power and pressure were considered simulation variables and argon was used for working gas. A decrease of electron density along the quartz tube was observed in low power condition but relatively uniform plasmas were generated in chamber by increasing the resistive power. The electron temperature was highly detected near the surface of quartz tube because the electron was heated only dielectric surface. The power transmission efficiency decreased and characteristics of surface plasma were observed in high electron density condition.

Simulation of Neutral Flow around Plasma Actuator

  • Jung Suk-Young;Ahn Chang-Soo;Hong Seung-Kyu
    • 한국전산유체공학회:학술대회논문집
    • /
    • 2006.05a
    • /
    • pp.306-308
    • /
    • 2006
  • Numerical simulations were carried out of the effects of momentum and heat produced by a plasma actuator on neutral flow. Momentum and heat generated during plasma discharge were modeled as a body force and heat source using results of experiments and DSMC of particle. These force and heat model were inserted into a Navier-Stokes equation and the flow around the plasma actuator could be explored by solving fluid dynamics only. Fluid simulation showed that force produced in DSMC generated a jet flow in the vicinity of the plasma actuator and heat accounted for density change.

  • PDF