• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2011년도 추계학술발표대회 논문집
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• pp.154-157
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• 2011

Hydrogenated silicon nitride deposited by LF-PECVD is commonly used for anti-reflection coating and passivation in silicon solar cell fabrication. The deposition of the optimized silicon nitride on the surface is elemental in crystalline silicon solar cell. In this work, the carrier lifetimes were measured while the thicknesses of $SiN_x$ were changed from 700 ${\AA}$ to 1150 ${\AA}$ with the gas flow of $SiH_4$ as 40 sccm and $NH_3$ as 120 sccm,. The carrier lifetime enhanced as the thickness of $SiN_x$ increased due to improved passivation effect. To study the characteristics of $SiN_x$ with various gas ratios, the gas flow of $NH_3$ was changed from 40 sccm to 200 sccm with intervals of 40 sccm. The thickness of $SiN_x$ was fixed as 1000 ${\AA}$ and the gas flow of $SiH_4$ as 40 sccm. The refractive index of SiNx and the carrier lifetime were measured before and after heat treating at $650^{\circ}C$ to investigate their change by the firing process in solar cell fabrication. The index of refraction of SiNx decreased as the gas ratios increased and the longest carrier lifetime was measured with the gas ratio $NH_3/SiH_4$ of 3.

• 반도체디스플레이기술학회지
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• 제7권1호
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• pp.1-5
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• 2008

In this paper, we fabricated pressure difference type gas flow sensor using only dry etching technology by ICP-RIE(inductive coupled plasma reactive ion etching). The sensor's structure consists of a common shear stress type piezoresistive pressure sensor with an orifice fabricated in the middle of the sensor diaphragm. Generally, structure like diaphragm is fabricated by wet etching technology using TMAH, but we fabricated diaphragm by only dry etching using ICP-RIE. To equalize the thickness of diaphragm we applied insulator($SiO_2$) layer of SOI(Si/$SiO_2$/Si-sub) wafer as delay layer of dry etching. Size of fabricated diaphragm is $1000{\times}1000{\times}7\;{\mu}m^3$ and overall chip $3000{\times}3000{\times}7\;{\mu}m^3$. We measured the variation of output voltage toward the change of gas pressure to analyze characteristics of the fabricated sensor. Sensitivity of fabricated sensor was relatively high as about 1.5mV/V kPa at 1kPa full-scale. Nonlinearity was below 0.5%F.S. Over-pressure range of the fabricated sensor is 100kPa or more.

• 분석과학
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• 제7권4호
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• pp.483-492
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• 1994

Glow Discharge를 이용한 고체 시료의 극미량 원소분석은 흡광, 방출, 형광 그리고 질량 분석 방법들이 특히 금속 시료들의 분석을 위해 많이 연구되어지고 있다. 본 연구에서는 자체 제작한 Gas-Jet-assisted Glow Discharge(GJGD)를 이용하여 각 실험변수에 따른 영향을 비교하여 보았다. 제작한 글로우 방전의 특성화 실험에 사용한 실험 변수로는 전류, 방전 가스의 흐름 속도, 압력 등이었고 시료는 황동을 사용하였다. 시료의 주원소인 구리(Cu)와 아연(Zn)의 방출선세기와 방전가스인 아르곤(Ar)의 상대적인 세기를 비교하여 보았는데, 대체적으로 전류의 증가는 튕겨나옴(Sputtering) 현상을 촉진시켜 방출선의 세기가 증가하였고 가스 흐름 속도는 플라즈마 속으로의 수송과 확산에 관여하여 증가될수록 방출선의 세기를 감소시켰다. 글로우 방전 내의 압력의 증가는 튕겨나옴 현상을 감소시킴과 더불어 시료 표면으로의 재부착을 증가시켜 방출선의 세기가 급격히 감소함을 보여 주었다.

• 분석과학
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• 제25권2호
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• pp.127-132
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• 2012

반도체와 전자부품의 코팅제로 사용되는, 특히 LCD와 PDP 커넥터주위의 보호를 위해 사용되는 폴리실록산(시편)의 흐름성(flow) 및 퍼짐성(self-leveling)을 측정할 수 있는 시험 장치가 고안되었고, 점도가 각기 다른 실록산 폴리머 견본들을 이용하여 고안된 시험장치를 시험하였다. 이 장치를 사용하여 시편의 흐름성 및 퍼짐성을 측정한 결과, 이 장치가 점도를 통해 흐름성 및 퍼짐성을 예측하던 것을 대신 할 수 있다고 판단되었다. 특히, 흐름성이 적절히 조절되어야만 하는 LCD, PDP 및 반도체 커넥션 보호 코팅제의 특성 평가에 유용하게 활용될 것으로 기대된다.

• 대한의용생체공학회:의공학회지
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• 제28권3호
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• pp.387-391
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• 2007

An oxygenator is a very important artificial organ and widely used for patients with lung failure or during open heart surgery. Although an oxygenator has been widely studied worldwide to enhance its efficiency, studies on oxygenators, in particular when using a pulsatile blood flow, are domestically limited. Therefore, a new oxygenator was developed in the lab and animal experimental results are described in the paper. The oxygenator is composed of polycarbonate housing and polypropylene hollow fibers. It has a total length of 400 mm and a surface area of $1.7 m^2$. The animal experiment lasted for 4 hours. The blood flow rate was set to 2 L/min and a pulsatile blood pump, T-PLS (Twin-Pulse Life Support), was used. Samples were drawn at the oxygenator's inlet and outlet. The total hemoglobin (Hb), saturation oxygen ($sO_2$), and partial oxygen pressure ($pO_2$), partial $CO_2$ pressure ($pCO_2$), and plasma bicarbonate ion concentration ($HCO_3^-$) were measured. The oxygen and carbon dioxide transfer rates were also calculated based on the experimental data in order to estimate the oxygenator's gas transfer efficiency. The oxygen and carbon dioxide transfer rates were $16.4{\pm}1.58$ and $165.7{\pm}10.96 mL/min$, respectively. The results showed a higher carbon dioxide transfer rate was achieved with the oxygenator. Also, the mean inlet and outlet blood pressures were 162.79 and 137.92 mmHg, respectively. The oxygenator has a low pressure drop between its inlet and outlet. The aim of own preliminary study was to make a new oxygenator and review its performance when applying a pulsatile blood pump thus, confirming the possibility of a new oxygenator suitable for pulsatile flow.

• 청정기술
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• 제25권1호
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• pp.81-90
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• 2019

프로페인($C_3H_8$)의 건식 개질($CO_2$ 개질)을 통한 합성 가스($H_2$와 CO 혼합물) 제조를 위해 $Ni-CeO_2/{\gamma}-Al_2O_3$ 촉매가 충진된 유전체 장벽 방전 플라즈마 반응기를 사용하였다. 열 또는 플라즈마에 의해 환원된 $Ni-CeO_2/{\gamma}-Al_2O_3$ 촉매를 사용하여 $C_3H_8/CO_2$ 비율 1/3, 총 유량 $300mL\;min^{-1}$에서 플라즈마-촉매 건식 개질을 수행하였다. 건식 개질에 대한 촉매 활성은 온도범위 $500{\sim}600^{\circ}C$에서 평가되었다. $Ni-CeO_2/{\gamma}-Al_2O_3$ 촉매 제조를 위해 전구물질 수용액(질산니켈, 질산세륨)으로 함침된 ${\gamma}-Al_2O_3$를 공기 분위기에서 소성시킨 후, $H_2/Ar$ 분위기에서 환원시켰다. 촉매 특성 조사에는 X-선 회절분석기(XRD), 투과전자현미경(TEM), 전계 방출 주사전자현미경(FE-SEM), 승온 탈착($H_2-TPD$, $CO_2-TPD$) 및 라만 분광기가 이용되었다. 열로 환원된 촉매와 비교하면 플라즈마 방전하에서 환원된 $Ni-CeO_2/{\gamma}-Al_2O_3$ 촉매가 개질 반응을 통한 합성 가스 생산에서 보다 우수한 촉매 활성을 나타내었다. 또한, 플라즈마로 환원된 $Ni-CeO_2/{\gamma}-Al_2O_3$가 개질 반응의 문제점인 탄소퇴적 관점에서 장기 촉매 안정성을 보여주었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1818-1820
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• 1999

This paper presents direct ${\mu}c$-Si:H thin film growth on the glass substrates using RPCVD system (remote plasma chemical vapor deposition) in low temperature. Hydrogenated micro-crystalline silicon deposited by RPCVD system in low temperature is very useful material for photovoltaic devices, sensor applications, and TFTs (thin film transistors). Varying the deposition conditions such as substrate temperature, gas flow rate, reactive gas ratio $(SiH_4/H_2)$, total chamber pressure, and rf power, we deposited ${\mu}c$-Si:H thin films on the glass substrates (Corning glass 1737). And then we measured the structural and electrical properties of the films.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1772-1774
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• 2004

Because the physics occurring during an interruption process is not well known, it is not easy to analyze the characteristics of a self-blast circuit breaker neither theoretically nor experimentally. Fortunately the available computational power and the numerical method improved recently make it possible to predict an interruption process as precisely and fast as possible. Therefore many researches using computational methods have been done for the interruption process of interrupters and applied to extend the information such as thermal and dielectric reignition. In this paper, we have simulated the interruption process of SF6 self-blast circuit breakers with the arc plasma during the fault interruption of a 10 kA current. The CFD program used here is coupled with the electromagnetic field analysis, the radiation model and the effects of turbulence. Through this work, we have get further information about the thermal performance as well as the behavior of the arc. The results have been compared with the measured arc voltage.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.99.2-99.2
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• 2015

현재 투명전극(Transparent Conductive Oxide: TCO)은 평판 디스플레이, 태양전지, 터치패널, 투명 트렌지스터의 전극 등 여러 분야에서 연구되어지고 있으며, 주로 IT 산업의 핵심재료로 ITO (Indium Tin Oxide)가 사용되고 있다. ITO 박막은 주로 스퍼터 공정을 통해 제작이 되며, 전기전도도가 우수하며 높은 Optical Band Gap을 가지고 있어 투명전극으로 많이 사용되고 연구되어지고 있다. 산화물 박막을 증착할 때 산소유량에 따라 박막의 물성이 변하거나 박막의 특성이 저하되는 현상 등을 가지고 있어 공정시 산소유량이 중요한 변수로 작용하게 된다. 본 연구에서는 증착 공정 중 발생하는 플라즈마의 방출광을 가지고 산소의 대표적인 파장의 방출광을 관찰하여 방출광이 변화함에 따라 실시간으로 산소가스유량이 제어됨을 확인하였으며, 또한 산소유량제어를 통해 생성된 박막의 전기적 특성 및 광학적 특성 등 박막의 물성을 비교하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권12호
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• pp.606-615
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• 2004

The discharge characteristics of a ramp reset waveform in the alternating current plasma display panel(ac PDP) were studied using a 2-dimensional numerical simulation. We analyzed the wall charge variation during the reset discharge, address discharge and sustain discharge adopting a ramp reset waveform. Then we investigated the principal parameters for a successful discharge. In this paper, we suggest a new parameter, printing particles' density and its effects on the stability of the ramp discharge. The maximum current flows of the three electrodes during the ramp reset period were decreased with the increase in the priming particles's density which was explained with the wall charge characteristics and the current flow characteristics obtained by a 2-D simulation.