• Title/Summary/Keyword: plasma flow

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Oxidation of Soot Particles with O Radicals Generated in a AC Streamer Corona Discharge (AC 스트리머 코로나 방전으로 생성된 O 라디칼과 매연 입자의 산화반응)

  • Kim, Pil-Seung;Lee, Kyo-Seung;Hwang, Jung-Ho
    • Journal of the Korean Society of Combustion
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    • v.8 no.1
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    • pp.9-16
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    • 2003
  • Carbon soot emission from combustion processes, especially from diesel engines, is a subject of growing concern since soot is known to seriously affect human health. Efforts have been made to oxidize soot particles utilizing Non-Thermal Plasma(NTP) techniques. When oxygen is carried into a plasma device, electrons generated by the plasma dissociate the oxygen, resulting in the formation of oxygen atoms. These highly activated atoms, called O radicals, are known as strong oxidizing agent. This paper presents concentration variations of CO and $CO_2$ at the exit of the plasma device, resulting from the soot oxidation by O radicals, with variations of inlet oxygen concentration, gas temperature, and gas flow rate. Based on the data, Arrehenious rate constants of reactions between C(s)+O and C(s)+O+O were proposed.

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On the silicon nitride film formation and characteristic study by chemical vapor deposition method using electron cyclotron resonance plasma (전자 싸이클로트론 공명 플라즈마 화학 증착법에 의한 실리콘 질화막 형성 및 특성 연구)

  • 김용진;김정형;송선규;장홍영
    • Journal of the Korean institute of surface engineering
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    • v.25 no.6
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    • pp.287-292
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    • 1992
  • Silicon nitride thin film (SiNx) was deposited onto the 3inch silicon wafer using an electron cyclotron resonance (ECR) plasma apparatus. The thin films which were deposited by changing the SiH4N2 gas flow rate ratio at 1.5mTorr without substrate heating were analyzed through the x-ray photo spectroscopy (XPS) and ellipsometer measurements, etc. Silicon nitride thin films prepared by the electron cyclotron resonance plasma chemical vapor deposition method at low substrate temperature (<10$0^{\circ}C$) exhibited excellent physical and electrical properties. The very uniform and good quality silicon nitride thin films were obtained. The characteristics of electron cyclotron resonance plasma were inferred from the analyzed results of the deposited films.

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Baking analysis of the KSTAR vacuum vessel and plasma facing components (KSTAR 진공용기 및 플라즈마 대향 부품에 대한 베이킹 해석)

  • 이강희;임기학;허남일;인상렬;조승연
    • Journal of the Korean Vacuum Society
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    • v.8 no.4A
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    • pp.397-402
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    • 1999
  • The base pressure of the vacuum vessel of KSTAR tokamak is to be ultra high vacuum, $10^{-6}\sim10^{-7}Pa$, to produce a clean plasma with low impurity concentrations. For this purpose, vessel and plasma facing components need to be baked up to $250^{\circ}C$, $350^{\circ}C$ respectively to remove impurities from the plasma-material interaction surfaces. Here the required heating power to be supplied for baking has been calculated according to pre-assumed different temperature profiles (baking scenario and proper baking plan for KSTAR tokamak has been proposed. Mass flow rate and temperature of nitrogen gas for baking has also been calculated.

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A study on plasma-assisted patterning and doubly deposited cathode for improvement of AMOLED common electrode IR drop

  • Yang, Ji-Hoon;Kwak, Jeong-Hun;Lee, Chang-Hee;Hong, Yong-Taek
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.481-484
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    • 2008
  • In order to reduce IR drop through common electrode in AMOLED, we propose a novel method to form electrical contact between highly-conductive bus lines and common electrode by using a plasma-assisted patterning of OLED layers and double deposition of the common electrode. Plasma-assisted patterning effects on OLED performance and degradation have been investigated. This patterning method caused turn-on voltage decrease, current flow increase at the same applied OLED voltages, quantum efficiency decrease, and rapid degradation at early stage during the lifetime test. However, comparable 70% luminance lifetime were obtained for both patterned and non-patterned OLEDs.

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Monitoring of plasma and spatter with photodiode in $CO_2$ laser welding (고출력 $CO_2$ 레이저 용접시 포토 다이오드를 이용한 플라즈마와 스패터 모니터링)

  • 박현성;이세헌;정경훈;박인수
    • Laser Solutions
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    • v.2 no.1
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    • pp.30-37
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    • 1999
  • Laser-welded Tailored Blank is the hottest thing in many automobile companies. But they demand on weld quality, reproducibility, and formability. So it is the great problem of automation of laser welding process. Therefore, it is requested to construct on-line process monitoring system on high accuracy. The light which is emitted from plasma and spatter in laser welding was detected by photo-diodes. It was found that the light intensity depends on welding speed. laser power, and flow rate of assist gas. The relationship between the plasma and spatter and the weld quality can be used for on-line laser weld monitoring systems.

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Numerical Analysis of an Arc Plasma in a DC Electric Furnace

  • Lee, Yeon-Won;Lee, Jong-Hoon
    • Journal of Advanced Marine Engineering and Technology
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    • v.28 no.8
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    • pp.1251-1257
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    • 2004
  • In order to analyze the heat transfer phenomena in the plasma flames, a mathematical model describing heat and fluid flow in an electric arc has been developed and used to predict heat transfer from the arc to the steel bath in a DC Electric Arc Furnace. The arc model takes the separate contributions to the heat transfer from each involved mechanism onto account, that is radiation, convection and energy transported by electrons. The finite volume method and a SIMPLE algorithm are used for solving the governing MHD equations, that are conservation equations of mass, momentum and energy together with the equations describing a standard k-${\varepsilon}$ model for turbulence. The model predicts heat transfer for different currents and arc lengths. Finally these calculation results can be used as a useful insight into plasma phenomena of the industrial-scale electric arc furnace. From these results, it can be concluded that higher arc current and longer arc length give high heat transfer

Preparation of plasma-polymerized polythiophene films (플라즈마 중합된 폴리티오펜 필름의 제조)

  • Kim, Tae-Young;Kim, Jong-Eun;Kim, Won-Jung;Suh, Kwang-S.
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.1419-1421
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    • 2002
  • Plasma polymerization of thiophene was carried out in a vacuum reactor with capacitively coupled electrode. This paper describes the dependence of molecular structure and electrical properties on the polymerization conditions such as plasma energy, mass flow rate and pressure. The plasma polymerized thiophene films were chracterized by FT-IR spectroscopy and SEM. The IR analysis revealed the thiophene rings are broken by the discharge energy.

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Wear Mechanism of Plasma-Sprayed Coating in Mo- and Co-Based Alloy

  • Lee, Soo W.
    • Tribology and Lubricants
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    • v.11 no.5
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    • pp.108-113
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    • 1995
  • Wear and friction behavior of plasma-sprayed coatings in Mo- and Co-based alloy were studied for the application of piston-ring automobile engine. The plasma-sprayed coatings were varied with gun current density, gas flow, and distance. The surface roughness, microhardness, and wear volume were measured depending on the spray distances. The high temperature hardness value were also measured as a function of temperature. Ball-on-disc geometry configuration tribometer was utilized in air. The wear tests were performed in the temperature ranges from room temperature to 825$^{\circ}$C to investigate the tribological trend of the piston-ring materials in the lack of lubricant. The cross sections of wear track were investigated, using microscopy.

Field emission from hydrogen-free DLC

  • Suk Jae chung;Han, Eun-Jung;Lim, Sung-Hoon;Jin Jang
    • Journal of Korean Vacuum Science & Technology
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    • v.3 no.1
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    • pp.49-53
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    • 1999
  • We have studied the field emission characteristics of diamond-like-carbon (DLC) films deposited by a layer-by-layer technique using plasma enhanced chemical vapor deposition, in which the deposition of a thin layer of DLC and a CH4 plasma exposure on its surface were carried out alternatively. The hydrogen-free DLC can be deposited by CH4 plasma exposure for 140 sec on a 5 nm DLC layer. N2 gas-phase doping in the CH4 plasma was also carried out to reduce the work function of the DLC. The optimum [N2]/[CH4] flow rate ratio was found to be 9% for the efficient electron emission, at which the onset-field was 7.2 V/$\mu\textrm{m}$. It was found that the hydrogen-free DLC has a stable electron emitting property.

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Characterization of Low-Temperature Graphene Growth with Plasma Enhanced Chemical Vapor Deposition

  • Ma, Yifei;Kim, Dae-Kyoung;Xin, Guoqing;Chae, Hee-Yeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.421-421
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    • 2012
  • Graphene has drawn enormous attention owing to its outstanding properties, such as high charge mobility, excellent transparence and mechanical property. Synthesis of Graphene by chemical vapor deposition (CVD) is an attractive way to produce large-scale Graphene on various substrates. However the fatal limitation of CVD process is high temperature requirement(around $1,000^{\circ}C$), at which many substrates such as Al substrate cannot endure. Therefore, we propose plasma enhanced CVD (PECVD) and decrease the temperature to $400^{\circ}C$. Fig. 1 shows the typical structure of RF-PECVD instrument. The quality of Graphene is affected by several variables. Such as plasma power, distance between substrate and electronic coil, flow rate of source gas and growth time. In this study, we investigate the influence of these factors on Graphene synthesis in vacuum condition. And the results were checked by Raman spectra and conductivity measurement.

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