• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.237.1-237.1
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• 2014

Etching is one of the most important steps in semiconductor manufacturing. In etch process control a critical task is to stop the etch process when the layer to be etched has been removed. If the etch process is allowed to continue beyond this time, the material gets over-etched and the lower layer is partially removed. On the other hand if the etch process is stopped too early, part of the layer to be etched still remains, called under-etched. Endpoint detection (EPD) is used to detect the most accurate time to stop the etch process in order to avoid over or under etch. The goal of this research is to develop a hardware and software system for EPD. The hardware consists of an Optical Plasma Monitor (OPM) sensor which is used to continuously monitor the plasma optical emission intensity during the etch process. The OPM software was developed to acquire and analyze the data to perform EPD. Our EPD algorithm is based on the following theory. As the etch process starts the plasma generated in the vacuum is added with the by-products from the etch reactions on the layer being etched. As the endpoint reaches and the layer gets completely removed the plasma constituents change gradually changing the optical intensity of the plasma. Although the change in optical intensity is not apparent, the difference in the plasma constituents when the endpoint has reached leaves a unique signature in the data gathered. Though not detectable in time domain, this signature could be obscured in the frequency spectrum of the data. By filtering and analysis of the changes in the frequency spectrum before and after the endpoint we could extract this signature. In order to do that, first, the EPD algorithm converts the time series signal into frequency domain. Next the noise in the frequency spectrum is removed to look for the useful frequency constituents of the data. Once these useful frequencies have been selected, they are monitored continuously in time and using a sub-algorithm the endpoint is detected when significant changes are observed in those signals. The experiment consisted of three kinds of etch processes; ashing, SiO2 on Si etch and metal on Si etch to develop and evaluate the EPD system.

• 한국전기전자재료학회논문지
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• 제24권9호
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• pp.701-709
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• 2011

In semiconductor wafer fabrication, etching is one of the most critical processes, by which a material layer is selectively removed. Because of difficulty to correct a mistake caused by over etching, it is critical that etch should be performed correctly. This paper proposes a new approach for etch endpoint detection of small open area wafers. The traditional endpoint detection technique uses a few manually selected wavelengths, which are adequate for large open areas. As the integrated circuit devices continue to shrink in geometry and increase in device density, detecting the endpoint for small open areas presents a serious challenge to process engineers. In this work, a high-resolution optical emission spectroscopy (OES) sensor is used to provide the necessary sensitivity for detecting subtle endpoint signal. Partial Least Squares (PLS) method is used to analyze the OES data which reduces dimension of the data and increases gap between classes. Support Vector Machine (SVM) is employed to detect endpoint using the data after PLS. SVM classifies normal etching state and after endpoint state. Two data sets from OES are used in training PLS and SVM. The other data sets are used to test the performance of the model. The results show that the trained PLS and SVM hybrid algorithm model detects endpoint accurately.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.436-437
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• 2012

Double patterning technology (DPT) has been suggested as a promising candidates of the next generation lithography technology in FLASH and DRAM manufacturing in sub-40nm technology node. DPT enables to overcome the physical limitation of optical lithography, and it is expected to be continued as long as e-beam lithography takes place in manufacturing. Several different processes for DPT are currently available in practice, and they are litho-litho-etch (LLE), litho-etch-litho-etch (LELE), litho-freeze-litho-etch (LFLE), and self-aligned double patterning (SADP) [1]. The self-aligned approach is regarded as more suitable for mass production, but it requires precise control of sidewall space etch profile for the exact definition of hard mask layer. In this paper, we propose etch end point detection (EPD) in spacer etching to precisely control sidewall profile in SADP. Conventional etch EPD notify the end point after or on-set of a layer being etched is removed, but the EPD in spacer etch should land-off exactly after surface removal while the spacer is still remained. Precise control of real-time in-situ EPD may help to control the size of spacer to realize desired pattern geometry. To demonstrate the capability of spacer-etch EPD, we fabricated metal line structure on silicon dioxide layer and spacer deposition layer with silicon nitride. While blanket etch of the spacer layer takes place in inductively coupled plasma-reactive ion etching (ICP-RIE), in-situ monitoring of plasma chemistry is performed using optical emission spectroscopy (OES), and the acquired data is stored in a local computer. Through offline analysis of the acquired OES data with respect to etch gas and by-product chemistry, a representative EPD time traces signal is derived. We found that the SE-EPD is useful for precise control of spacer etching in DPT, and we are continuously developing real-time SE-EPD methodology employing cumulative sum (CUSUM) control chart [2].

• 분석과학
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• 제15권2호
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• pp.120-126
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• 2002

유도결합 플라스마 질량분석기(ICP-MS)와 유도결합 플라스마 원자방출분광기 (ICP-AES)를 이용하여 상업적으로 유통되고 있는 4 종의 분무기(Meinhard, ESI PFA, Cross-flow, Babington)와 한국표준과학연구원(KRISS)에서 직접 제작한 분무기인 KRISS Inert 분무기와 KRISS conespray 분무기의 성능을 평가하였다. 각 분무기의 압력, 시료주입량의 변화에 따른 시료주입 효율을 조사하였으며 ICP-MS와 ICP-AES에 연결하였을 때 시료주입량의 변화에 따른 감도, 안정성, 바탕선 세기, 산화물과 수소화물의 생성 비율을 조사하였다. 시료의 종류, 시료 양의 제한성, 분석기기의 종류, 분석 원소에 따라 가장 적합한 분무기를 선택해야 높은 감도, 낮은 바탕값, 안정한 신호세기 등의 좋은 분석결과를 얻을 수 있음을 알 수 있었다.

• Journal of Korean Dental Science
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• 제11권2호
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• pp.71-81
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• 2018

Purpose: The purpose of this study was to investigate the corrosion behaviors of dental implant alloy after microsized surface modification in electrolytes containing Mn ion. Materials and Methods: $Mn-TiO_2$ coatings were prepared on the Ti-6Al-4V alloy for dental implants using a plasma electrolytic oxidation (PEO) method carried out in electrolytes containing different concentrations of Mn, namely, 0%, 5%, and 20%. Potentiodynamic method was employed to examine the corrosion behaviors, and the alternatingcurrent (AC) impedance behaviors were examined in 0.9% NaCl solution at $36.5^{\circ}C{\pm}1.0^{\circ}C$ using a potentiostat and an electrochemical impedance spectroscope. The potentiodynamic test was performed with a scanning rate of $1.667mV\;s^{-1}$ from -1,500 to 2,000 mV. A frequency range of $10^{-1}$ to $10^5Hz$ was used for the electrochemical impedance spectroscopy (EIS) measurements. The amplitude of the AC signal was 10 mV, and 5 points per decade were used. The morphology and structure of the samples were examined using field-emission scanning electron microscopy and thin-film X-ray diffraction. The elemental analysis was performed using energy-dispersive X-ray spectroscopy. Result: The PEO-treated surface exhibited an irregular pore shape, and the pore size and number of the pores increased with an increase in the Mn concentration. For the PEO-treated surface, a higher corrosion current density ($I_{corr}$) and a lower corrosion potential ($E_{corr}$) was obtained as compared to that of the bulk surface. However, the current density in the passive regions ($I_{pass}$) was found to be more stable for the PEO-treated surface than that of the bulk surface. As the Mn concentration increased, the capacitance values of the outer porous layer and the barrier layer decreased, and the polarization resistance of the barrier layers increased. In the case of the Mn/Ca-P coatings, the corroded surface was found to be covered with corrosion products. Conclusion: It is confirmed that corrosion resistance and polarization resistance of PEO-treated alloy increased as Mn content increased, and PEO-treated surface showed lower current density in the passive region.

• 자원환경지질
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• 제40권5호
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• pp.563-574
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• 2007

LIBS는 시료 표면에서 발생된 플라즈마로부터 방출되는 원자들의 분광선을 측정함으로써 물질의 화학적 조성을 감지, 확인, 정량화할 수 있는 최신의 분석기술로 기존의 전형적인 원소분석방법에 비해 현장분석기술로서의 더 많은 장점을 가지고 있다. LIBS는 최소한의 시료로 복잡한 분석과정을 피함으로 신속한 분석을 가능케 하고, 기기의 다방면적의 적용가능성과 단순함으로 인해 신속하게 가스, 고체, 액체상에서 다원소를 동시에 분석할 수 있는 레이저 기반의 분석기술로 지구화학적 분석, 탐사 혹은 환경분석에서 현장 이동성을 가진 센서로의 가능성 측면에서 매력적인 도구가 된다. 그러나 현장분석기술로서 토양환경에 적용하기에는 여전히 해결해야 할 문제들이 있다. 문헌연구를 통해 기본적인 작용원리인 플라즈마 형성과 물질붕괴과정을 고찰하고 현장분석기술로서 LIBS의 현 위치를 살펴본다. 또한 토양환경에 적용하기 위해 매질의 특성, 레이저 특성 및 분석신호에 영향을 미치는 다양한 인자들을 살펴보아 LIBS에 대한 기본적 이해를 돕고자 한다. 또한 분석에 미치는 영향 인자들을 보정해 분석 결과의 정확도, 정밀도 및 검출 한계 등 분석의 질을 향상 시킬 수 있는 기법 등을 다양한 문헌 연구를 통해 살펴봄으로써 추후 국내 토양환경분야의 LIBS 현장기술의 적용가능성을 고찰해보고자 한다.