• Proceedings of the KSME Conference
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• 2008.11a
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• pp.585-589
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• 2008

This study is performed to analyze the fluid flow about 150mm shower heads of semiconductor device. Under the air pressure, the ideal gas of moving fluid is injected as 5m/s velocity into inlet of shower heads and the flow distribution in shower heads is measured according to pitch of plasma distribution device. As results, the maximum and minimum value of fluid velocity are investigated with their position. The velocity values at outlet are also studied. From two experiment using the plasma distribution device, the results of CFD are compared with the experimental results. That results shows stable flow of fluid in that case of corrected design from CFD.

• Journal of the Semiconductor & Display Technology
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• v.15 no.3
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• pp.72-77
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• 2016

As the semiconductor production technology has gradually developed and intra-market competition has grown fiercer, the caliber of Si Wafer for semiconductor production has increased as well. And semiconductors have become integrated with higher density. Presently the Si Wafer caliber has reached up to 450 mm and relevant production technology has been advanced together. Electrostatic chuck is an important device utilized not only for the Wafer transport and fixation but also for the heat treatment process based on plasma. To effectively control the high calories generated by plasma, it employs a refrigerant-based cooling method. Amid the enlarging Si Wafers and semiconductor device integration, effective temperature control is essential. Therefore, uniformed temperature distribution in the electrostatic chuck is a key factor determining its performance. In this study, the form of refrigerant flow channel will be investigated for uniformed temperature distribution in electrostatic chuck.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.12
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• pp.2179-2183
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• 2007

In this paper, to produce sheet plasma with high density for ion plating, we designed magnetic circuit of ion plating device consisting of solenoid coil and rectangular permanent magnet. And, we analyzed the effects of the magnetic field distribution using FEM (Finite Element Methode). Additionally, we made a sputtering system including ion plating technique on the basis of the design and verified the possibility of the sheet plasma application for advanced sputter system.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.98-99
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• 2012

Deposition of thin films using magnetron sputtering plasmas is a well-developed, classical technology. However, detailed investigations using advanced diagnostics are insufficient in magnetron sputtering, in comparison with plasma-aided dry etching and plasma-enhanced chemical vapor deposition. In this talk, we will show examples of diagnostic works on magnetron sputtering employing metal targets. Diagnostic methods which have fine spatial resolutions are suitable for magnetron sputtering plasmas since they have significant spatial distributions. We are using two-dimensional laser-induced fluorescence spectroscopy, in which the plasma space is illuminated by a tunable laser beam with a planer shape. A charge-coupled device camera with a gated image intensifier is used for taking the picture of the image of laser-induced fluorescence formed on the planer laser beam. The picture of laser-induced fluorescence directly represents the two-dimensional distribution of the atom density probed by the tunable laser beam, when an intense laser with a relatively wide line-width is used. When a weak laser beam with a relatively narrow linewidth is used, the laser-induced fluorescence represents the density distribution of atoms which feel the laser wavelength to be resonant via the Doppler shift corresponding to their velocities. In this case, we can obtain the velocity distribution function of atoms by scanning the wavelength of the laser beam around the line center.

• Proceedings of the SAREK Conference
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• 2009.06a
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• pp.1361-1366
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• 2009

This study is to see the internal flow for the plasma cutting fume collector. Plasma cutters are widely used in the canning industry and Fume cause the device because it will affect the performance of the design of dust collector. Therefore, to determine the distribution of the internal flow using CFD and Solver was used for calculated with commercial CFD code STAR-CCM+. The results show that design of chamber was incorrect after passed the filter for exhaust to the fan. And the location of the duct to the influx of dust collector and the design was incorrect. In addition, an array of filter was also inappropriate. As a result, present fume collector need to improvement.

• Journal of Industrial Convergence
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• v.21 no.7
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• pp.83-92
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• 2023

The bullet shape of the plasma jet using the atmospheric-pressure dielectric barrier discharge method changes depending on the applied fluid rate and the intensity of the electric field. This changes appear as a difference in spectral distribution due to a difference in density of the DBD plasma jet. It is an important factor in utilizing the plasma device that difference between the occurrence of active species and the intensity through the analysis of the spectrum of the generated plasma jet. In this paper, a plasma jet generator of the atmospheric pressure volume DBD method using Ar gas was make a prototype in accordance with the proposed design method. The characteristics jet fluid rate analysis of Ar gas was accomplished through simulation to determine the dependence of flow rate for the generation of plasma jets, and the characteristics of plasma jets using spectrometers were analyzed in the prototype system to generate optimal plasma jet bullet shapes through MFC flow control. Through the design method of the proposed system, the method of establishing the optimal plasma jet characteristics in the device and the results of active species on the EOS were verified.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.338-344
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• 1996

This study was an investigation of plasma-induced damages on silicon substrate in the semiconductor manufacturing technology. The plasma-induced damage level on silicon substrate was analyzed and compared in various plasma etching systems. The analysis methods were therma wave, life-time recovery, SCA (Surface Charge Analyzer) and TRXF (Total Reflection X-ray Fluorescence) measurements, and the measured values were compared for each systems. In the comparison of the values which were obtained by a system that had low life-time recovery, there was not any differences in DC parameters. However, the reflesh time distribution of device of that system had decreased about 10 to 20m sec compared to a system which had high life-time recovery.

• Journal of Powder Materials
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• v.27 no.4
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• pp.333-338
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• 2020

In this study, we fabricate a thin- and dense-BCuP-5 coating layer, one of the switching device multilayers, through a plasma spray process. In addition, the microstructure and macroscopic properties of the coating layer, such as hardness and bond strength, are investigated. Both the initial powder feedstock and plasma-sprayed BCuP-5 coating layer show the main Cu phase, Cu-Ag-Cu₃P ternary phases, and Ag phase. This means that microstructural degradation does not occur during plasma spraying. The Vickers hardness of the coating layer was measured as 117.0 HV, indicating that the fine distribution of the three phases enables the excellent mechanical properties of the plasma-sprayed BCuP-5 coating layer. The pull-off strength of the plasma-sprayed BCuP-5 coating layer is measured as 16.5 kg/㎠. Based on the above findings, the applicability of plasma spray for the fabrication process of low-cost multi-layered electronic contact materials is discussed and suggested.

• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.121-129
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• 2012

RF biased inductively coupled plasma (ICP) is widely used in semiconductor and display etch processes which are based on vacuum science. Up to now, researches on how rf-bias power affects have been focused on the controls of dc self-bias voltages. But, effect of RF bias on plasma parameters which give a crucial role in the processing result and device performance has been little studied. In this work, we studied the correlation between the RF bias and plasma parameters and the recent published results were included in this paper. Plasma density was changed with the RF bias power and this variation can be explained by simple global model. As the RF bias was applied to the ICP, increase in the electron temperature from the electron energy distribution was measured indicating electron heating. Plasma density uniformity was enhanced with the RF bias power. This study can be helpful for the control of the optimum discharge condition, as well as the basic understanding for correlation between the RF bias and plasma parameters.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.957-960
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• 2008

The influences of silicon and MgO seed particle on the reconstruction characteristics of MgO protective layer were investigated to clarify the mechanism of reconstruction and exaggerated grain growth (EGG) in AC-PDP. The reconstruction and EGG are closely correlated with the driving force for nucleation and growth, interface energy and initial size distribution of MgO protective layer in plasma space during discharge in AC-PDP.