• The Korean Journal of Ceramics
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• v.2 no.4
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• pp.197-202
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• 1996

The highly oriented diamond particles were deposited on the mirror-polished (100) silicon substrates in the bell-jar type microwave plasma deposition system using a three-step process consisting if carburization, bias-enhanced nucleation and growth. By adjusting the geometry of the substrate and substrate holder, very dense disc-shaped plasma was formed over the substrate when the bias voltage was below -200V. Almsot perfectly oriented diamond films were obtained only in this dense disc-shaped plasma. From the results of the optical emission spectra of the dense disc-shaped plasma, it was found that the concentrations of atomic hydrogen and hydrocarbon radical were increased with negative bias voltage. It was also found that the highly oriented diamonds were deposited in the region, where the intensity ratios of carbonaceous species to atomic hydrogen are saturated.

• Textile Coloration and Finishing
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• v.21 no.3
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• pp.19-25
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• 2009

Polymerization of tetraethoxysilane on a glass substrate was investigated by remote microwave plasma using argon with portions of nitrous oxide as carrier gas. Transparent layer like a thickness of 0.5 ${\mu}m$ 3 ${\mu}m$ were obtained, differing in chemical composition, depending on plasma power and treatment time as well as on ageing time. In general the milder the treatment and the shorter the ageing was, the higher was the content of organic structural elements in the layer. We have identified that the chemical structure of our samples composed of mainly Si O and Si C groups containing aliphatics, carbonyl groups. These results were obtained by X ray photon spectroscopy, Fourier transformed infrared spectroscopy, and scanning electron microscope combined with Energy dispersive X ray spectroscopy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.73-73
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• 2008

In this work, the study on the $SiO_2$ film non-uniformity by PECVD (Plasma Enhanced Chemical Vapor Deposition) was performed. Plasma diagnostics was analyzed by a DLP(Double Langmuir Probe) and a probe-type QMS(Quadrupole Mass Spectrometer) in order to investigate the spatial distribution of the plasma species in the chamber. The relationship between the plasma species and the depositing rate of the films was examined. On the basis of this work, it was confirmed that O radical density mainly contributed to the increase in the depositing rate of the $SiO_2$ films and the electron temperature in the plasma had a main effect on the formation of the oxygen radicals.

• Journal of the Korean institute of surface engineering
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• v.40 no.4
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• pp.159-164
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• 2007

Transparent aluminum oxide films were deposited on polycarbonate (PC) substrates by inductively coupled plasma (ICP) assisted reactive sputtering. the oxygen flow rate was regulated by controlling the target voltage with a proportional integrate derivative controller. The PC substrate was treated with plasma prior to the deposition in order to the enhance the adhesive strength of the $Al_2O_3$ film. The characteristics of hardness, structure, density, transmittance, deposition rate, surface roughness and residual stress were investigated to estimate the possibility for the hard coating.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.66.1-66.1
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• 2010

Microcrystalline silicon at low temperatures has been developed using plasma enhanced chemical vapor deposition (PECVD). It has been found that energetically positive ion and atomic hydrogen collision on to growing surface have important effects on increasing growth rate, and atomic hydrogen density is necessary for the increasing growth rate correspondingly, while keeping ion bombardment is less level. Since the plasma potential is determined by working pressure, the ion energy can be reduced by increasing the deposition pressure of 700-1200 Pa. Also, correlation of the growth rate and crystallinity with deposition parameters such as working pressure, hydrogen flow rate and input power were investigated. Consequently an efficiency of 7.9% was obtained at a high growth rate of 0.92 nm/s at a high RF power 300W using a plasma-enhanced chemical vapor deposition method (27.12MHz).

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.155.2-155.2
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• 2014

Plasma Enhanced Atomic Layer Deposition(PEALD)와 Atomic Layer Deposition(ALD) Techniques는 '정확한 두께 조절' 및 '우수한 균일도'를 가지는 신뢰할 수 있는 진공 기술이다. 본 연구에서는 다공성 구조를 가지는 기판을 대상으로 PEALD와 ALD Techniques을 이용한 $Al_2O_3$ 형성 공정의 증착 특성을 비교하였다. 각 공정은 공통적으로 Tris-Methyl-Aluminium(TMA)을 첫번째 전구체로 사용하였고 purge gas로는 Nitrogen를 사용하였다. 그리고 두번째 전구체로 PEALD 공정에서는 Oxygen Plasma를 사용하였고 ALD 공정에서는 Water를 사용하였다. 복잡한 다공성 구조를 가지는 기판은 $TiO_2$ Nano-Particle paste과 colloidal Silver paste를 소결시켜 제작하여 사용하였다. 각 공정의 차이점을 비교하기 위해서 배기단에 Capacitor Diaphram Gauge(CDG)와 Residual Gas Analyzer(RGA)를 통해서 압력과 잔류 가스를 모니터하였다. 그리고 각 공정을 통해서 porous한 Nano-Particles Network에 형성된 $Al_2O_3$막의 특성을 비교하기 위해서 FE-SEM과 EDX를 통해서 관찰하였다. 또한 좀 더 자세한 비교 분석을 위해서 $Al_2O_3$ 막이 형성된 porous한 Nano-Particles Networks의 각 각의 particles들을 분산시켜 TEM과 AFM를 통해서 관찰하였다. 나아가 전기적 물성의 차이점을 비교하기 위해서 IV 및 CV를 측정하였다. 위의 일련의 비교 실험을 통해서 'PEALD과 ALD을 이용한 다공성 기판의 증착 특성'에 대하여 고찰하였다.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1379-1382
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• 1997

Diamond-like carbon(DLC) thin films are produced by using a filtered cathodic vacuum arc(FCVA) deposition system. Different magnetic components, namely steering, focusing, and filtering plasma-optic systems, are used to achieve a stable arc plasma and to prevent the macroparticles from incorporating into the deposited films. Effects of magnetic fields on plasma behavior and film deposition are examined. The carbon ion energy is found to be varied by applying a negative (accelerating) substrate bias voltage. The deposition rate of DLC films is dependent upon magnetic field as well as substrate bias voltage and at a nominal deposition condition is about $2{\AA}/s$. The structural properties of DLC films, such as internal stress, relative fraction of tetrahedral($sp^3$) bonds, and surface roughness have also been characterized as a function of substrate bias voltages and partial gas($N_2$) pressures.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.156-159
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• 2011

SiNx:H films have been widely used for anti-reflection coatings and passivation for crystalline silicon solar cells. In this study, SiNx:H films were deposited using high frequency (13.56 MHz) direct plasma enhanced chemical vapor deposition, and the optical and passivation properties were investigated. The radio frequency power, the spacing between the showerhead and wafer, the $NH_3/SiH_4$ ratio, the total gas flow, and the $N_2$ gas flow were changed over certain ranges for the film deposition. The thickness uniformity, the refractive index, and the minority carrier lifetime were then measured in order to study the properties of the film. The optimal deposition conditions for application to crystalline Si solar cells are determined from the results of this study.

• Journal of the Semiconductor & Display Technology
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• v.7 no.2
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• pp.59-62
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• 2008

The Lifetime of OLEDs by ITO/glass substrates cleaning method and cathode deposition method were investigated in the fabrication of green light emitting OLEDs with $Alq_3$-C545T fluorescent system. In our experiments, the optimum cleaning method was obtained at last processing of boiling IPA(isopropyl alcohol). And the optimum deposition methode was obtained at 3 steps deposition rate of Al. The deposition rate of 3 steps progressed changing from $0.5\AA$/sec to $3\AA$/ sec. The green light emitting OLED with plasma treatment at 150W for 2 minutes showed the highest luminance and efficiency of 20000 cd/$m^2$ and 16 lm/W. On the contrary, the OLED device without plasma treatment showed much lower performance with the luminance and efficiency of 3500 cd/$m^2$ and 2 lm/W.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.11a
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• pp.12-12
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• 2000

This paper investigated the effect of the film deposition rate for $CrN_x$ microstructure and mechanical properties. For these purpose, pure Cr an stoichiometric CrN films were deposited with various target power density on Si hardened M2 tool steel. The variation of ni trogen concentration in $CrN_x$ f analyzed by AES and deposition rate was calculated by measuring of thickness using ${\alpha}-step$ profilometer. The microstructure was analyzed by X-Ray Diffract and Scanning Electron Microscopy(SEM), and mechanical properties were evalua residual stress, microhardness and adhesion tests. Deposition rate of Cr and CrN increased as an almost linear function of target power density from $0.25\mu\textrm{m}/min$ and $0.15\mu\textrm{m}/min$ to $0.43\mu\textrm{m}/min$. Residual stresses of Cr and CrN films were from tensi Ie to compressive stress with an increase of deposi tion rate a compressive stresses were increased as more augmentation of deposition r maximum hardness value of $2300kg/\textrm{mm}^2$ and the best adhesion strength correspond HF 1 were obtained for CrN film synthesized at the highest target densitY($13.2W/\textrm{mm}^2$) owing to high residual compressive stress and increasing mobility.