• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.93-93
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• 2016

Large scale integrated circuits (LSIs) has been improved by the shrinkage of the circuit dimensions. The smaller chip sizes and increase in circuit density require the miniaturization of the line-width and space between metal interconnections. Therefore, an extreme precise control of the critical dimension and pattern profile is necessary to fabricate next generation nano-electronics devices. The pattern profile control of plasma etching with an accuracy of sub-nanometer must be achieved. To realize the etching process which achieves the problem, understanding of the etching mechanism and precise control of the process based on the real-time monitoring of internal plasma parameters such as etching species density, surface temperature of substrate, etc. are very important. For instance, it is known that the etched profiles of organic low dielectric (low-k) films are sensitive to the substrate temperature and density ratio of H and N atoms in the H2/N2 plasma [1]. In this study, we introduced a feedback control of actual substrate temperature and radical density ratio monitored in real time. And then the dependence of etch rates and profiles of organic films have been evaluated based on the substrate temperatures. In this study, organic low-k films were etched by a dual frequency capacitively coupled plasma employing the mixture of H2/N2 gases. A 100-MHz power was supplied to an upper electrode for plasma generation. The Si substrate was electrostatically chucked to a lower electrode biased by supplying a 2-MHz power. To investigate the effects of H and N radical on the etching profile of organic low-k films, absolute H and N atom densities were measured by vacuum ultraviolet absorption spectroscopy [2]. Moreover, using the optical fiber-type low-coherence interferometer [3], substrate temperature has been measured in real time during etching process. From the measurement results, the temperature raised rapidly just after plasma ignition and was gradually saturated. The temporal change of substrate temperature is a crucial issue to control of surface reactions of reactive species. Therefore, by the intervals of on-off of the plasma discharge, the substrate temperature was maintained within ${\pm}1.5^{\circ}C$ from the set value. As a result, the temperatures were kept within $3^{\circ}C$ during the etching process. Then, we etched organic films with line-and-space pattern using this system. The cross-sections of the organic films etched for 50 s with the substrate temperatures at $20^{\circ}C$ and $100^{\circ}C$ were observed by SEM. From the results, they were different in the sidewall profile. It suggests that the reactions on the sidewalls changed according to the substrate temperature. The precise substrate temperature control method with real-time temperature monitoring and intermittent plasma generation was suggested to contribute on realization of fine pattern etching.

• 전기의세계
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• 제22권2호
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• pp.57-69
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• 1973

The aim of this study was to investigate the behaviors of plasma jet under coaxial magnetic field in paralled with it for controlling optical characteristics and input power of plasma jet without impurity and instability of arc plasma column. Because the discharge characteristics of plasma jet were so distinctively different according to the existence or non-existence of magnetic field, the input power, luminous intensity of plasma jet and thermal efficiency were comparatively studied in respect of such variables as arc current, gap of electrode, quantity of argon flow, magnetic flux density, diameter and length of nozzle, with the use of several materials which were different in diameter and length of nozzel. The results were as follows; 1) The voltage tends to show a drooping characteristic at law current and then rises gradually. The luminous intensity of plasma jet increases exponentially with arc current. 2) Arc voltage increases and luminous intensity tends to decrease gradually as gap of electrode increases. 3) Arc voltage and luminous intensity tends to decrease gradually as gap of electrode increases. 3) Arc voltage and luminous intensity increase in accordance with the quantity of argon flow. 4) At first step, arc voltage increases to maximum value with the growth of flux density and then tends to show a gradual decrease. Luminous intensity decreases with the growth flux density. 5) Arc voltage decreases as the constriction length of nozzle increases, maximum decrease is shown at the constriction length of 20(mm) and it increases beyond that value. The luminous intensity decreases as the constriction length grows. 6) Arc voltage and luminous in tensity increase with the growth of diameters of nozzle. 7) Thermal efficiency has values between 50% and 75%, being influenced by arc current, the quantity of argon flow, flux density, the length of electrode gap and the constriction length of nozzle.

• 대한화학회지
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• 제30권3호
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• pp.327-332
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• 1986

유도결합 플라스마 공간내의 전자밀도를 측정하였다. 전자밀도의 측정시 유도결합 플라스마의 작동조건은, (1) 냉각기체만 사용할 때, (2) 냉각기체와 운반기체만을 사용할 때, (3) 보통의 작동조건은, 즉 에아로졸을 포함한 운반기체를 사용할 때, (4) 약 88%의 에아로졸을 제거시켰을 때, 그리고 (5) 과량의 리튬을 주입시켰을 때로서 분류하였다. 보통의 작동조건에서 플라스마의 낮은 부분에서는 전자밀도가 상당히 감소하여 플라스마내의 가장 전자밀도가 큰 곳보다 약 80배 감소하였다. 이온화 방해영향을 일으키는 알칼리금속을 과량으로 넣었을 때 전자밀도의 변화는 관찰되지 않았고 유도코일의 power를 증가시키면 전자밀도도 증가하였다.

• Journal of Astronomy and Space Sciences
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• 제20권1호
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• pp.53-62
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• 2003

SPS(Space Physics Sensor)는 1999년 발사된 다목적 실용 위성 1호(KOMPSAT-I)에 실린 관측 장비로서, 태양 활동 극대기인 2000년 6월부터 2001년 8월까지 지구 이온층에 관한 자료를 지구로 전송하였다. 이 자료 중 때때로 저위도 지역에서 급격한 플라즈마 밀도 증가 현상을 볼 수 있었다. 이러한 현상의 통계적 분포를 살펴본 결과, 지구 자기장이 약한 대서양 지역과 하와이 지역에서 발생 확률이 가장 높으며, 지자기 활동성 지수인 Dst나 태양 활동성을 나타내는 F10.7지수와는 특별한 상관관계가 없다는 사실을 확인할 수 있었다. 밀도 증가 지역 내의 전자 온도 변화는 개별 사건마다 증가, 유지, 또는 감소를 보이고 있으나, 온도가 급격히 감소하는 경우가 지배적이었다.

• 조명전기설비학회논문지
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• 제20권8호
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• pp.6-14
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• 2006

본 논문은 TFT-LCD(Thin Film Transistor Liquid Crystal Display) PECVD(Plasma Enhanced Chemical Vapor Deposition) 장비 공정용 챔버(Chamber) 세정을 위한 새로운 플라즈마 세정방법에 적합한 플라즈마 발생방법과 플라즈마 발생을 위한 고주파 전원장치의 전력회로에 관한 연구이다. 세정에 요구되는 고밀도 플라즈마는 안테나 형태의 기존 ICP(Inductively Coupled Plasma) 방식에 강자성체인 페라이트 코어를 적용하므로 써 $1{\times}10^{11}[EA/cm^3]$이상의 고밀도 플라즈마 발생을 가능하게 하였다. 플라즈마 발생을 위한 400[kHz] 고주파 전력 변환장치의 경우 범용 HB(Half Bridge) 인버터 방식을 적용하여 플라즈마 부하에서도 안정적인 영전압 스위칭 동작을 확인 하였다. 변압기 직렬결합 방식을 사용한 10[kW] 고출력을 통해 $A_r$과 $NF_3$가스 분위기하에서 플라즈마의 밀도와 $NF_3$가스 분해율을 측정하므로서 고주파 전력 변환 장치의 성능을 입증하였다.

• Asian-Australasian Journal of Animal Sciences
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• 제14권11호
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• pp.1592-1597
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• 2001

Sixteen pigs from 2 distinct genetic lines (LGAH and VFIL) obtained after eight generations of divergent selection for high (H) and low (L) lean tissue growth rate with ad-libitum feeding (LGA) and voluntary feed intake (VF1), respectively, were used in this study. The objectives of this investigation were to establish appropriate working conditions for the postheparin plasma lipoprotein lipase (LPL) assay and to study relationships between fat deposition and plasma lipids, very low density lipoprotein (VLDL) lipids, VLDL-subfractions and postheparin plasma LPL activity in growing pigs. Four preliminary experiments were performed to determine the appropriate working conditions for the postheparin plasma LPL assays. Postheparin plasma preincubated with SDS (20-50 mM) at $26^{\circ}C$ for 45 minutes inhibited hepatic lipase activity. A total of $2{\mu}l$ VLDL/assay produced maximum stimulation of LPL activity. Postheparin plasma protein and increasing incubation time contributed an optimum response. LGAH pigs had a significantly higher proportion subtraction 2 than VFIL pigs. No differences were observed in postheparin plasma LPL activity and backfat thickness for two lines of pigs. There were positive correlations between backfat thickness and proportion of subtractions 2 and postheparin plasma LPL activity but the results were not statistically significant. Backfat thickness was not statistically correlated with proportion of subtraction 2 and postheparin plasma LPL activity in a multiple regression analysis. It is believed that the apolipoprotein E, which is present in higher quantities in VLDL-subfraction 2 plays an important role for clearing VLDL triacylglycerol into adipose tissue. LPL activity of pigs can be measured by using postheparin plasma technique. If the relationships of backfat thickness and VLDL-subfraction 2 and postheparin plasma LPL activity can be established, it suggests that these parameters could be used as indicators in selection programmes. Further experiments need to be conducted by using larger sample size and different breed of pigs with greater differences in backfat thicknesses to confirm these trends.

• 전자공학회논문지A
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• 제31A권4호
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• pp.84-91
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• 1994

A compact electron cyclotron resonance(ECR) plasma system composed of a microwave generator and a magnet coil was fabricated. A Langmuir single probe was used to investigate the plasma characteristics of the system through I-V measurements. The performance of the compact ECR plasma system was tested for the case of silicon etching reaction with $CF_{4}/O_{2}$(30%) mixed gas. Electron density and etch rate increased to maximum values and then decreased with increasing argon gas pressure, but electron temperature changed in the opposite way. The electron density and the electron temperature of argon gas plasma were 0.85${\times}~5.5{\times}10^{10}cm^{-3}$ and 4.5~6.0 eV, respectively, in the pressure range from $3{\times}10^{4}$ to 0.05Torr. The etch rate reached a maximum value at the position of 2.5cm from the bottom of plasma cavity. Etch rate uniformity was $\pm$6% across 6cm wafer. Anisotropic index was 0.75 at 1.5${\times}10^{-4}$Torr.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.513-514
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• 2005

In plasma processing reactors, it is common practice to control plasma density and ion bombardment energy by manipulating excitation voltage and frequency. In this paper, a dually excited capacitively coupled rf plasma reactor is self-consistently simulated with a three moment model. Effects of phase differences between primary and secondary voltage waves, simultaneously modulated at various combination of commensurate frequencies, on plasma properties are investigated. The simulation results show that plasma potential and density as well as primary self-dc bias are nearly unaffected by the phase lag between the primary and the secondary voltage waves. The results also show that, with the secondary frequency substantially lower than the primary frequency, secondary self-dc bias remains constant regardless of the phase lag. As the secondary frequency approaches to the primary frequency, however, the secondary self-dc bias becomes greatly altered by the phase lag, and so does the ion bombardment energy at the secondary electrode. These results demonstrate that ion bombardment energy can be more carefully controlled through plasma simulation.

• 반도체디스플레이기술학회지
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• 제22권1호
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• pp.118-123
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• 2023

Partially magnetized capacitively coupled plasma (CCP) sources are investigated using a two-dimensional kinetic simulation code named EDIPIC-2D. A converging numerical solution was obtained for CCP with a 60 MHz power source, while properly capturing the dynamics of electrons and power absorption over a single RF period. The effects of magnetic fields with different orientations were evaluated. Axial magnetic fields caused changes in the spatial distribution of plasma density, affecting the loss channel. Transverse magnetic fields enhanced stochastic heating near the powered electrode, leading to an increase in plasma density while the significant E×B drift loss compensated for this rise.

• 한국추진공학회지
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• 제26권6호
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• pp.1-9
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• 2022

본 연구에서는 현대적 전기식 기폭관의 해석 모델링을 대상으로 실용적 적용이 가능한 금속성 플라즈마 조성비 및 전기전도도 계산모델이 제시되었다. 현 플라즈마 모델은 기폭관 브릿지 전기폭발 현상 시 발생하는 고밀도 플라즈마 영역의 비이상 플라즈마 효과 보정을 포함하였다. 구리 플라즈마를 대상으로 한 계산 결과는 넓은 온도 범위 및 고밀도 영역에서 해당 측정 결과와 전반적으로 잘 일치하여 기폭관 모델링 대상 적용에 적절함을 보여주었다.