• Nuclear Engineering and Technology
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• 제52권4호
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• pp.827-834
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• 2020

Damage of tungsten due to helium ions of a PF device was studied. The tungsten was analyzed by SEM and AFM after irradiation. SEM revealed fine bubbles of helium atoms with diameters of a few nanometers, which join and form larger bubbles and blisters on the surface of tungsten. This observation confirmed the results of molecular dynamics simulation. SEM analysis after etching of the irradiated surface indicated cavities with depth range of 35-85 nm. The average fluence of helium ion of the PF device was calculated about 5.2 × 10¹⁵ cm^-2 per shot, using Lee code. Energy spectrum of helium ions was estimated using a Thomson parabola spectrometer as a function of dN/dE ∝ E^-2.8 in the energy range of 10-200 keV. The characteristics of helium ion beam was imported to SRIM code. SRIM revealed that the maximum DPA and maximum helium concentration occur in the depth range of 20-50 nm. SRIM also showed that at depth of 30 nm, all of the tungsten atoms are displaced after 20 shots, while at depth of higher than 85 nm the destruction is insignificant. There is a close match between SRIM results and the measured depths of cavities in SEM images of tungsten after etching.

• 신재생에너지
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• 제9권2호
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• pp.23-29
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• 2013

Furnace and laser is currently the most important doping process. However furnace is typically difficult appling for selective emitters. Laser requires an expensive equipment and induces a structural damage due to high temperature using laser. This study has developed a new atmospheric pressure plasma source and research atmospheric pressure plasma doping. Atmospheric pressure plasma source injected Ar gas is applied a low frequency (a few 10 kHz) and discharged the plasma. We used P type silicon wafers of solar cell. We set the doping parameter that plasma treatment time was 6s and 30s, and the current of making the plasma is 70 mA and 120 mA. As result of experiment, prolonged plasma process time and highly plasma current occur deeper doping depth and improve sheet resistance. We investigated doping profile of phosphorus paste by SIMS (Secondary Ion Mass Spectroscopy) and obtained the sheet resistance using generally formula. Additionally, grasped the wafer surface image with SEM (Scanning Electron Microscopy) to investigate surface damage of doped wafer. Therefore we confirm the possibility making the selective emitter of solar cell applied atmospheric pressure plasma doping with phosphorus paste.

• 생명과학회지
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• 제21권6호
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• pp.838-844
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• 2011

본 연구는 고강도 1회성 운동 시 혈장 MDA와 SOD의 농도변화와 임파구 DNA 손상에 대한 성별의 차이를 평가하는데 목적이 있었다. 본 연구의 목적을 달성하기 위하여 남자 대학생과 여자 대학생을 대상으로 85%$VO_{2max}$ all-out 운동수행에 따른 혈장 MDA와 SOD 그리고 임파구 DNA 손상에 대한 분석을 실시하였으며, 연구 결과에 대한 결론은 다음과 같다. 85%$VO_{2max}$ all-out 운동에 따른 혈장 MDA와 SOD는 운동 종료 시 유의하게 증가하였으며, 통계적으로 유의한 차이는 나타나지 않았으나 남성이 여성에 비해 MDA는 높고 SOD는 낮은 경향을 보였다. 반면 85%$VO_{2max}$ all-out 운동에 따른 임파구 DNA 손상을 알아보기 위해 실시한 comet assay 결과 세 가지 parameter (%DNA in the tail, tail length, tail moment) 모두 운동 종료 시 유의하게 증가하였으며 남성의 %DNA in the tail과 tail length가 여성에 비해 통계적으로 유의하게 높게 나타났다. 따라서 본 연구 결과를 종합해보면 1회성 고강도 운동은 산화적 스트레스를 유발할 수 있으며 남성이 여성에 비해 산화적 손상이 더 크다고 보여진다. 그러나, DNA 손상에는 산화적 스트레스 외에도 체력, 호르몬 수치, 생활습관, 운동 강도 및 지속시간 등 여러 가지 요인들이 영향을 줄 수 있다고 보고되고 있어, 성별에 따른 DNA 손상에 대한 명확한 기전을 제시하기 위해서는 DNA 손상에 영향을 줄 수 있는 여러 요인들과의 관계를 고려한 지속적인 연구들이 필요하다고 생각된다.

• 한국전기전자재료학회논문지
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• 제11권4호
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• pp.261-266
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• 1998

In developing the high density memory device, the etching of fine pattern is becoming increasingly important. Therefore, definition of ultra fine line and space pattern and minimization of damage and contamination are essential process. Also, the high density plasma in low operating pressure is necessary. The candidates of high density plasma sources are electron cyclotron resonance plasma, helicon wave plasma, helical resonator, and inductively coupled plasma. In this study, planar type magnetized inductively coupled plasma etcher has been built. The density and temperature of Ar plasma are measured as a function of rf power, flow rate, external magnetic field, and pressure. The oxide etch rate and selectivity to polysilicon are measured as the above mentioned conditions and self-bias voltage.

• 반도체디스플레이기술학회지
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• 제22권3호
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• pp.130-135
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• 2023

Plasma-resistant ceramic (PRC) is a material used to prevent internal damage in plasma processing equipment for semiconductors and displays. The challenge is to suppress particles falling off from damaged surfaces and increase retention time in order to improve productivity and introduce the latest miniaturization process. Here, we confirmed the effect of suppressing plasma deterioration and reducing the etch rate through surface treatment of existing PRC with an initial illumination level of 200 nm. In particular, quartz glass showed a decrease in etch rate of up to 10%. Furthermore, it is believed that micro-scale secondary particles formed on the microstructure of each material grow as crystals during the fluoridation process. This is a factor that can act as a killer defect when dropped, and is an essential consideration when analyzing plasma resistance. The plasma etching suppression effect of the initial illumination is thought to be due to partial over etching at the dihedral angle of the material due to the sputtering of re-emission of Ar+-based cations. This means that plasma damage due to densification can also be interpreted in existing PRC studies. The research results are significant in that they present surface treatment conditions that can be directly applied to existing PRC for mass production and a new perspective to analyze plasma resistance in addition to simple etching rates.

• 한국전기전자재료학회논문지
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• 제15권7호
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• pp.570-575
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• 2002

$SrBi_2Ta_2O_9$ thin films were etched in $Cl_2/CF_4/Ar$ inductively coupled plasma (ICP). The maximum etch rate was 1300 ${\AA}/min$ at 900 W ICP power in Cl$_2$(20%)/$CF_4$(20%)/Ar(60%). As RF source power increased, radicals (F, Cl) and ion ($Ar^+$) increased. The influence of plasma induced damage during etching process was investigated in terms of P-E hysteresis loops, chemical states on the surface, surface morphology and phase of X-ray diffraction. The chemical states on the etched surface were investigated with X-ray spectroscopy and secondary ion mass spectrometry. After annealing $700^{\circ}C$ for 1 h in $O_2$ atmosphere, the decreased P-E hysteresises of the etched SBT thin films in Ar and $Cl_2/CF_4/Ar$ plasma were recovered.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.208.2-208.2
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• 2016

Many researchers have paid attention to the studies on the interaction between non-thermal plasma and aqueous solutions for biomedical applications. The gas composition in the plasma is very important. Oxygen and nitrogen are the main gases of interest in biological applications. Especially, we focus on the oxygen concentration. In this experiment, we studied the role of oxygen concentration in plasma induced chemical reactions in solution. At first, the amount of ions are measured according to changing the oxygen concentration. And we checked the relationship between these ions and pH value. Secondly, when the oxygen concentration is changed, it identified the type and amount of radical generated by the plasma. In order to confirm the effect of these chemical property change to biological material, hemoglobin and RBCs are chosen. RBCs are one of the common basic biological cells. Thirdly, when plasma treated according to oxygen concentration in nitrogen feeding gas, oxidation of hemoglobin and RBC is checked. Finally, membrane oxidation of RBC is measured to examine the relation between hemoglobin oxidation and membrane damage through relative hemolysis and Young's modulus. Our results suggest that reactive species generated by the plasma differsdepending on the oxygen concentration changes. The pH values are decreased when oxygen concentration increased. OH decrease and NO increase are also observed. These reactive species makes change of chemical properties of solution. We also able to confirm that the difference in these reactive species to affect the oxidation of the Hb and RBCs. The Hb and RBCs are more oxidized with the high oxygen concentration conditions. But membrane is damaged more by plasma treatment with only nitrogen gas. It is shown that red blood cells membrane damage and oxidation of hemoglobin are not directly related.

• Nuclear Engineering and Technology
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• 제54권7호
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• pp.2586-2591
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• 2022

In the present work, we have irradiated the DI-BSCCO superconducting tapes with the 100 keV deuterium ions to investigate the effect of ion irradiation on their critical current (Ic). The damage simulations are carried out using the binary collision approximation method to get the spatial distribution and depth profile of the damage events in the high temperature superconducting (HTS) tape. The point defects are formed near the surface of the HTS tape. These point defects change the vortex profile in the superconducting tape. Due to the long-range interaction of vortices with each other, the Ic of the tape degrades at the 77 K and self magnetic field. The radiation dose of 2.90 MGy degrades the 44% critical current of the tape. The results of the displacement per atom (dpa) and dose deposited by the deuterium ions are used to fit an empirical relation for predicting the degradation of the Ic of the tape. We include the dpa, dose and columnar defect terms produced by the incident particles in the empirical relation. The fitted empirical relation predicts that light ion irradiation degrades the Ic in the DI-BSCCO tape at the self field. This empirical relation can also be used in neutron irradiation to predict the lifetime of the DI-BSCCO tape. The change in the Ic of the DI-BSCCO tape due to deuterium irradiation is compared with the other second-generation HTS tape irradiated with energetic radiation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.6-6
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• 2010

Indium Tin Oxide (ITO)를 포함한 Transparent Conduction Oxide (TCO)는 LCD, OLED와 같은 Display, 그리고 Solar Cell 등 광신호와 전기신호간 변환이 필요한 모든 Device에 반드시 필요한 핵심 물질로, 특히 고특성 Display의 투명전극에서 요청되는 95% 이상의 투과도와 $15\;{\Omega}/{\square}$ 이하의 면저항 특성을 동시에 만족할 수 있는 기술은 현재까지 Plasma Sputtering 공정으로 $160^{\circ}C$ 이상에서 증착된 ITO 박막이 유일하다. 그러나, 최근 차세대 기술로서 Plastic Film을 기반으로 하는 Flexible Display 및 Flexible Solar Cell 구현에 대한 요구가 급증하면서, Plastic Film 기판위에 Plasma Damage이 없이 상온에 가까운 저온 ($100^{\circ}C$ 이하)에서 특성이 우수한 ITO 투명전극을 형성 할 수 있는 기술의 확보가 중요한 현안이 되고 있다. 지난 10년 동안 $100^{\circ}C$이하 저온에서 고특성의 ITO 또는 TCO 박막을 얻기위한 다양한 연구와 구체적인 공정이 활발히 연구되어 왔으나, ITO의 결정화 온도 (통상 $150{\sim}180^{\circ}C$)이하에서 증착된 ITO박막은 비정질 상태의 물성적 특성을 보여 원하는 전기적, 광학적 특성확보가 어려웠다. 본 논문에선 기본적으로 절연체 특성을 가져야 하는 산화물인 TCO가 반도체 또는 도체의 물리적 특성을 보여주는 기본원리의 고찰을 토대로, 재료학적 특성상 Crystalline 구조를 보여야 하는 ITO (Complex Cubic Bixbyte Structure)가 Plasma Sputtering 공정으로 저온에서 증착될 때 비정질 구조를 갖게 되는 원인을 규명하고, 이를 바탕으로 저온에서 증착된 ITO가 Crystalline 구조를 유지 할 수 있게 하고, Stress Control에 유리한 Nano-Crystalline 박막을 형성하면서 Crystallinity를 임의로 조절 할 수 있는 새로운 기술인 Magnetic Field Shielding Sputtering (MFSS) 공정과 최근 성과를 소개한다. 한편, 또 다른 새로운 저온 TCO 박막형성 기술로서, 유기반도체와 같은 Process Damage에 매우 취약한 유기물 위에 Plasma Damage 없이 TCO 박막을 직접 형성할 수 있는 Neutral Beam Assisted Sputtering (NBAS) 기술의 원리를 설명하고, 본 공정을 적용한 Top Emission OLED 소자의 결과를 소개한다. 또한, 고온공정이 수반되는 Solar Cell용 투명전극의 경우, 통상의 TCO박막이 고온공정을 거치면서 전기적 특성이 열화되는 원인을 규명하고, 이에 대한 근본적 해결 방법으로 ITO 박막의 Dopant인 Tin (Sn) 원자의 활성화를 증가시킨 Inductively Coupled Plasma Assisted DC Magnetron Sputtering (ICPDMS)의 원리와 박막의 물성적 특성과 내열 특성을 소개한다.

• 한국진공학회지
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• 제8권4A호
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• pp.490-495
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• 1999

In 0.18 $\mu \textrm m$ LOGIC device, the etch rate of NMOS polysilicons is different from that of PMOS polysilicons due to the state of polysilicon to manufacture gate line. To control the etch profile, we tested the ratio of $Cl_2$/HBr gas and the total chamber pressure, and also we reduced Back He pressure to get the vertical profile. In the case of manufacturing the gate photoresist line, we used Bottom Anti-Reflective Coating (BARC) to protect refrection of light. As a result we found that $CF_4O_2$ gas is good to etch BARC, because of high selectivity and good photoresist line profile after etching BARC. in the results of the characterization of plasma damage to the antenna effect of gate oxide, NO type thin film(growing gate oxide in 0, ambient followed by an NO anneal) is better than wet type thin film(growing gate oxide in $0_2+H_2$ ambient).