• Title/Summary/Keyword: plasma application

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Protective Coatings for the Elements of Ships Power Plants which Use Sea Water

  • Minaev, Alexander N.;Gnedenkov, S.V.;Sinebryukhov, S.L.;Mashtalar, D.V.
    • Journal of Advanced Marine Engineering and Technology
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    • v.36 no.3
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    • pp.341-350
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    • 2012
  • In this paper we observe the protective coatings carbon for steel, aluminium and titanium alloys were obtained by plasma electrolytic oxidation (PEO) under unipolar and bipolar conditions. The anticorrosion properties and the thermal stability of the surface layers were studied by electrochemical impedance spectroscopy and potentiodynamic polarization. It was found that the application of the bipolar PEO mode enables one to synthesize the surface layers that possess enhanced anticorrosion and mechanical properties. results of research of antiscale PEO - coatings for marine power equipment are presented. The combined method of prevention of corrosion and scale formation was tested at the industrial plants of Russian Shipyard "Zvezda".

Laser Microfabrications for Next-Generation Flat Panel Display (레이저를 이용한 차세대 평판 디스플레이 공정)

  • Kim, Kwang-Ryul
    • Korean Journal of Materials Research
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    • v.17 no.7
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    • pp.352-357
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    • 2007
  • Since a pattern defects "repair" system using a diode pumped solid state laser for Flat Panel Display (FPD) was suggested, a lot of laser systems have been explored and developed for mass-production microfabrication process. A maskless lithography system using 405 nm violet laser and Digital Micromirror Device (DMD) has been developed for PDP and Liquid Crystal Display (LCD) Thin Film Transistor (TFT) photolithography process. In addition, a "Laser Direct Patterning" system for Indium Tin Oxide (ITO) for Plasma Display Panel(PDP) has been evaluated one of the best successful examples for laser application system which is applied for mass-production lines. The "heat" and "solvent" free laser microfabrications process will be widely used because the next-generation flat panel displays, Flexible Display and Organic Light Emitting Diode (OLED) should use plastic substrates and organic materials which are very difficult to process using traditional fabrication methods.

Application of Neodymium Oxide into Transparent Dielectric Materials for PDP

  • Jung, Byung-Hae;Kim, Hyung-Sun;Lee, Ki-Sung;Sohn, Sang-Ho;Kwon, Tae-In;Lee, Sung-Wook
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.799-802
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    • 2002
  • For purer images in plasma display panel, a new dielectric compositions containing neodymium oxide were studied. In the present study, Pb-based compositions were used as mother glasses (PbO-$B_2O_3-SiO_2Nd_2O_3$) and thermal, dielectric, and optical properties were measured. As a result the new dielectric with a rare-earth oxide made selectively visible light penetrated and showed especially noticeable absorption properties at 585 nm that is surely related to the erroneous gas from Ne discharge. Thus, this light purple colored glass composition will help PDP to come true to get better imaging process.

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The improvement of discharge characteristics and lifetime of PDP by MgO deposition on the phosphor

  • Ha, Chang-Hoon;Kim, Jae-Sung;Jeong, Dong-Cheol;Whang, Ki-Woong
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.232-235
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    • 2002
  • An alternate application of MgO film for the improvement of discharge characteristics and life time in an ac plasma display panel (PDP) is suggested. In this research, we deposited MgO on the phosphor to get the same address characteristics irrespective of each phosphor. To avoid the luminance and efficiency degradation by MgO deposition on the phosphor, we optimized the MgO thickness through experiments. The results showed that PDP with MgO coated phosphor has a uniform formative delay in address discharge and improved degradation characteristics.

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Development of I-Chuck for Oxide Etcher (Oxide Etcher 용 E-Chuck의 기술개발)

  • 조남인;남형진;박순규
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.4 no.4
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    • pp.361-365
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    • 2003
  • A unipolar-type E-chuck was fabricated for the application of holding silicon wafers in the oxide etcher. For the fabrication of the unipolar ESC, core technologies such as coating of polyimide films and anodizing treatment of aluminum surface were developed. The polyimide films were prepared on thin coated copper substrates to minimize the plasma damage during the etch processing. Thin film heater technology was also developed for new type of E-chuck.

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ICP ETCHING OF TUNGSTEN FOR X-RAY MASKS

  • Jeong, C.;Song, K.;Park, C.;Jeon, Y.;Lee, D.;Ahn, J.
    • Journal of Surface Science and Engineering
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    • v.29 no.6
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    • pp.869-875
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    • 1996
  • In this article the effects of process parameters of inductively coupled plasma etching with $SF_6$ /$N_2$/Ar mixture gas and mask materials on the etched profile of W were investigated. While the etched profile was improved by $N_2$-addition, low working presure, and reduced $SF_6$ flow rate, the etching selectity (W against SAL resist) was decreased. Due to the difficulty of W etching with single layer resist, sputter deposited $Al_2O_3$ film was used as a hardmask. Reduction of required EB resist thickness through $Al_2O_3$ mask application could reduce proximity effect during e-beam patterning, but the etch anisotropy was degraded by decreased sidewall passiviation effect.

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Application and Technology on Development of High Temperature Structure SiCf/SiC Composite Materials (고온용 SiCf/SiC 복합재료개발 기술과 활용방향)

  • Yoon, Han-Ki;Lee, Young-Ju;Park, Yi-Hyun
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.32 no.11
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    • pp.1016-1021
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    • 2008
  • The development of the first wall whose major function is to withstand high neutron and heat fluxes is a critical path to fusion power. The materials database and the fabrication technology are being developed for design, construction and safety operation of the fusion reactor. The first wall was designed to consist of the plasma facing armor, the heat sink layer and the supporting plates. and Porous materials are of significant interest due to their wide applications in catalysis, separation, lightweight structural materials. In this study, the characteristics of the sintering process of SiC ceramic, $SiC_f$/SiC composite and porous $C_f$/SiC composite have been introduced order to study of the fusion blanket materials and heat-exchange pannel.

Weldability of Pure Titanium Thin plate for LPG Re-Condenser by Nd:YAG Laser - Physical Constant and Welding Parameter - (LPG 재응축기용 순티타늄 박판의 Nd:YAG 레이저 용접성(I) - 순티타늄의 물성과 용접변수 -)

  • Kim, Jong-Do;Gwak, Myeong-Seop;Lee, Chang-Je;Kim, Chang-Su
    • Proceedings of the KWS Conference
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    • 2007.11a
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    • pp.363-365
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    • 2007
  • Titanium and its alloys have excellent corrosion resistance, high strength to weight ratios and high temperature creep properties, which make them using many various fields of application. Responding to these needs, welding processes for titanium are also being used including TIG, MIG, resistance welding, plasma arc welding, diffusion welding, electron beam welding and laser welding. In this study, It is possible to get sound beads without humping bead and spatter with the decrease of peak power according to increase of pulse width and change of welding speed for heat input control at pulsed Nd:YAG laser welding of titanium plates for Lap welding.

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Low dielectric material etching technology for Cu interconnection (Plasma를 이용한 구리배선용 저유전 물질의 etching에 대한 연구)

  • Lee, Kil-Hun;Jung, Do-Hyun;Choi, Jong-Sun
    • Proceedings of the KIEE Conference
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    • 2000.11c
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    • pp.519-521
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    • 2000
  • The application of low dieletric constant material instead of $SiO_2$ has been considered to reduce interconnection delay, crosstalk, power exhaustion. Methylsilsesquioxane (MSSQ) have a dieletric constant less than k>3 which is lower than that for the convention $SiO_2$ insulator ($k{\sim}4$). The Propose of this study is to know etching rate of MSSQ. Expermentation in this paper use RIE(Reactive ion Etching) and centre) flow rate of $CF_4/O_2$ gas, RF power.

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Analysis of electron transport characteristic in He gas by MCS (MCS에 의한 Helium 기체 중의 전자수송특성 해석)

  • Song, Byoung-Doo;Ha, Sung-Chul;Seo, Sang-Hyoen;Moon, Ki-Seok;Yoo, Hoy-Young;Kim, Sang-Nam
    • Proceedings of the KIEE Conference
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    • 1998.07e
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    • pp.1752-1754
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    • 1998
  • Recently the research about electron transport characteristic and energy distribute function in mixture gases within Helium, has been used and developed widely as industrial quality improvement of extinguish characteristic, electrical dielectric strength ability of application of each species high voltage apparatus, gas plasma etching progress of work to use manufacture of semiconductor, thin film molding by CVD, insulation film to use ultra LSI, etc. This paper analyze electron transport characteristic in the range E/N $1{\sim}60$[Td], pressure $0.1{\sim}6.0$[Torr] by MCS. It is necessary to seek electron drift velocity, diffusion coefficient, lonization coefficients, characteristic energy, mean energy and electron energy distribution function as electron transport characteristic.

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