• 전력전자학회:학술대회논문집
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• 전력전자학회 2004년도 전력전자학술대회 논문집(2)
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• pp.704-708
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• 2004

Recently, many nation have released standard such as IEC 61000-3-2 and IEEE 59, which impose a limit on the harmonic current drawn by equipment connected to AC line in order to prevent the distortion of an AC Line. Therefore, Plasma Display Panel (PDP) which is highlightened in digital display device also has the Power Factor Correction (PFC) circuit to meet the harmonic requirements. In PDP power module, the conventional boost converter is usually used for the PFC circuit. However, it comes serious thermal problem on it's bridge diode due to heat of PDP, and therefore the system stability is not guaranteed. In this paper, the bridgeless boost converter, which is used for PFC circuit of the PDP power module, is designed and verified the possibility of the application in a practical product in a view of efficiency, component count, temperature and etc.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권2호
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• pp.76-79
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• 1999

Low-hydrogenated DLC films were coated on the Mo-tip FEAs by 'layer-by-layer' process based on the plasma-enhanced CVD method. The hydrogen content in the DLC film deposited by the 'layer-by-layer' process was appeared to be remarkably lowered through SIMS analysis. Also, the low-hydrogenated DLC-coated Mo-tip FEA showed good potentiality for FED applications in terms of turn-on voltage, emission current, emission stability and light emitting uniformity.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1543-1546
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• 2008

Modified pulse waveforms were applied to an AC plasma display panel with an auxiliary electrode in order to improve the operation voltage margin. Reciprocal sustain pulse waveforms and modified auxiliary pulse waveforms were applied to the sustain and auxiliary electrode, respectively. During the sustain period, the influence of the address electrode on the luminous efficacy of long-coplanar gap discharges was mitigated by application of reciprocal sustain pulse waveforms. Modified auxiliary pulse waveforms maintained the high efficacy obtained from the AC PDP with an auxiliary electrode. The proposed reciprocal sustain and modified auxiliary pulses waveforms can induce stable discharges in long-coplanar gap discharges and can control wall charges with a wider auxiliary pulse voltage margin, thereby enhancing the luminous efficacy of the AC PDP with an auxiliary electrode.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.942-945
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• 2006

The picture quality of a plasma display panel is very sensitive to the phosphor characteristics such as luminescence, decay time, surface properties, and even longevity of phosphor material in itself. In our previous work, the discharging characteristics in green cell of PDP were demonstrated to be enhanced by coating $Zn_2SiO_4:Mn^{2+}$ phosphors with positively charged metal oxide such as MgO. Here, $Zn_2SiO_4:Mn^{2+}$ phosphors were coated by various metal oxides for examining the coating effect on the picture quality. Specially, longevity while fabricating the panel was investigated for panel application in this work. Also the effects of ion and electron bombardment on the phosphor surface will be discussed in this work.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 추계학술대회 논문집 학회본부
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• pp.111-113
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• 1989

Recently nitrided oxides have been investigated for the application as the replacement of thermally grown oxides in the MIS devices. In this paper, nitrided oxides which were treated by the $N_2$ plasma were fabricated with the 350 $^{\circ}C$ substrate temperature, 0.2 torr chamber pressure, 250 watt RF power, 60 seem $N_2$ flow rate, 30 mins treatment time. After the UV light is radiated on the sample, it is noticed that the interface state density, $N_{ss}$, is slightly decreased. Under the UV light, the samples are stress by $\pm$DC bias. After those treatment interface state density. $N_{ss}$, is increased.

• Carbon letters
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• 제2권1호
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• pp.27-36
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• 2001

The pack-cementation process is the method which is formed SiC coating layer to improve weak oxidation properties of CFRCs (carbon fiber-reinforced carbons). This method develops the anti-oxidation coating layer having no dimensional changes and good wetting properties. In this study to improve the oxidative resistance of the prepared 4D CFRCs, the surface of CFRCs is coated by SiC using pack cementation method. The mechanical properties of SiC-coated 4D CFRCs are measured by the 3-point bending test, and their ablation properties are investigated by the arc torch plasma test. From the results, it is found that both mechanical and ablation properties of SiC-coated 4D CFRCs are much better than bare CFRCs.

• ETRI Journal
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• 제24권5호
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• pp.398-400
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• 2002

Using $Cr_2O_3$ thin film, we developed a novel etch-stop technique for the protection of silicon surface morphology during deep ion coupled plasma etching of silica layers. With this technique we were able to etch a silica trench with a depth of over 20 ${\mu}m$ without any damage to the exposed silicon terrace surface. This technique should be well applicable to fabricating silica planar lightwave circuit platforms for opto-electronic hybrid integration.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 춘계학술대회
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• pp.1078-1082
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• 2003

A feasibility study for the fabrication of master replication with nanostructures by Nanoimprint Lithography (NIL) was investigated for application of polymer Photonic Bandgap (PBG) devices used in photonic IC. Large area gratings of $9{\times}15(mm^2)$ with p = 400 nm was successfully embossed on PMMA on silicon wafer and the embossing parameters (temperature, pressure, time) were established. A precise control of $O_2$ plasma Reactive Ion Etching (RIE) process time allowed window opening over the whole area despite the presence of wafer bending. Master replication with aspect ratio 1 was successfully fabricated, but master replication with aspect ratio 3 needs to optimize parameters. All replications were done in a NIL process.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.1211-1214
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• 2003

The film is prepared by electron cyclotron resonance chemical vapor deposition (ECRCVD) employing CH$_4$ and H$_2$ gases. It is deposited by the control of microwave plasma power, gas flow ratio, deposition pressure, and In-situ thermal treatment temperature. The structure of a-C:H (hydrogenated amorphous carbon) thin film is analysed by FT-IR spectroscopy. The fraction sp$^3$ versus sp$^2$ bonding is very important to clear up the surface and interrace of a-C:H film properties such as nano-scale friction behavior. The sp$^3$ versus sp$^2$ bonding of a-C:H thin film is dependent on the deposition conditions, therefore. nano-scale friction behavior is dependent on the deposition conditions.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 추계종합학술대회 논문집
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• pp.330-333
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• 1999

A Schottky characteristic is one of the important properties to determine the performance of GaN electronic devices. In this paper, we have studied how to improve the property after n$^{+}$ layer etching by ICP(Induced Coupled Plasma)-RIE(Reactive ion Etching). We have tried $N_2$radiation, annealing after $N_2$radiation, and annealing in $N_2$environment. We have found that a simple annealing method in $N_2$environment is enough to improve the Schottky characteristic for electronic device-Quality application.n.