• Korean Journal of Materials Research
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• v.12 no.3
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• pp.195-199
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• 2002

Planar Hall effect of ferromagnetic GaMnAs thin films was investigated for the first time. The films were grown in an optimized growth condition via molecular beam epitaxy at low temperatures. For the optimization of the growth conditions, we used reflection high-energy electron diffraction, electrical conductivity, double crystal x-ray diffraction, and superconducting quantum interference device measurements techniques. We observed that the difference between the longitudinal resistance and the transverse resistance matches the planar Hall resistance. The ratio of the planar Hall resistance at saturation magnetic field to that at zero reached above 500%.

• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.179-183
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• 2001

Magnetoresistance and Planar Hall effect of Glass/Ni$\sub$83/Fe$\sub$17/(2 nm)/[Cu(2 nm)Ni$\sub$83/Fe$\sub$17/(20 nm)]$\sub$50/ multilayer were measured. Repeated saw tooth like planar Hall effect signal was observed in the range of magnetization reversal process, while no sign of such saw tooth was observed in Magnetoresistance diagram. For the reason of saw tooth like signal, it is supposed that subsequent abrupt domain wall motion of each magnetic layer in the process of magnetization reversal process was observed in planar Hall effect in transverse direction to the current direction. This fine structure of planar Hall effect was observed for applied fields in any direction. Magnetoresistance curve did not show this fine structure of magnetization reversal, of course, since only net magnetization of each layer has to do with the resistivity. Extended research on the reason of this sawtooth like signal should be conducted.

• Journal of Magnetics
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• v.19 no.1
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• pp.10-14
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• 2014

In this study, we fabricate an integrated microfluidic chip with a planar Hall effect (PHE) sensor for single magnetic bead detection. The PHE sensor was constructed with a junction size of $10{\mu}m{\times}10{\mu}m$ using a trilayer structure of Ta(3 nm)/NiFe(10 nm)/Cu(1.2 nm)/IrMn(10 nm)/Ta(3 nm). The sensitivity of the PHE sensor was 19.86 ${\mu}V/Oe$. A diameter of 8.18 ${\mu}m$ magnetic beads was used, of which the saturation magnetization was ~2.1 emu/g. The magnetic susceptibility ${\chi}$ of these magnetic beads was calculated to be ~0.14. The diluted magnetic beads solution was introduced to the microfluidic channel attributing a single bead flow and simultaneously the PHE sensor voltage was measured to be 0.35 ${\mu}V$. The integrated microchip was able to detect a magnetic moment of $1.98{\times}10^{-10}$ emu.

• Journal of Magnetics
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• v.12 no.1
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• pp.40-44
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• 2007

The Planar Hall effect in a spin valve structure has been applied as a biosensor being capable of detecting $Dynabeads^{(R)}$ M-280. The sensor performance was tested under the application of a DC magnetic field where the output signals were obtained from a nanovoltmeter. The sensor with the pattern size of $50{\times}100{\mu}m^2$ has produced high sensitivity; especially, the real-time profiles by using that sensor revealed significant performance at external applied magnetic field of around 7.0 Oe with the resolution of 0.04 beads per $\mu m^2$. Finally, a successful array including 24 patterns with the single sensor size of $3{\times}3{\mu}m^2$ has shown the uniform and stable signals for single magnetic bead detection. The comparison of this sensor signal with the others has proved feasibility for biosensor application. This, connecting with the advantages of more stable and high signal to noise of PHR sensor's behaviors, can be used to detect the biomolecules and provide a vehicle for detection and study of other molecular interaction.

• Proceedings of the Korean Magnestics Society Conference
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• 1997.11a
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• pp.38-39
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• 1997

• Proceedings of the Korean Magnestics Society Conference
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• 2000.05a
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• pp.118-119
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• 2000

• Journal of the Korean Society for Nondestructive Testing
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• v.28 no.5
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• pp.421-426
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• 2008

The magnetic bio-sensor used the PHR (planar hall resistance) effect generated by the free layer in spin-valve giant magnetoresistance structure of Ta/NiFe/CoFe/Cu/NiFe/IrMn/Ta. The PHR element with micrometer size was fabricated through the photolithograph and dry etching process. The PHR signal with magnetic field was measured under the conditions of with and without single magnetic bead. A single magnetic bead of diameter $2.8\;{\mu}m$ was successfully detected using the PHR sensor. Therefore, the high resolution PHR sensor can be applied to bio-sensor application utilizing the output voltage variation of the PHR signals in the presence and absence of a single magnetic bead.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.224.1-224.1
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• 2007

• Proceedings of the Korean Magnestics Society Conference
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• 1997.11a
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• pp.40-41
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• 1997

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.393-399
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• 1997

H-SiC single crystals were successfully grown by the sublimation method and the optimum growth conditions were established. The grown SiC crystals were about 33 mm in diameter and 11 mm in length. The micropipe density of the polished SiC wafers was 400/$\textrm{cm}^2$, and the planar defect density was 50/$\textrm{cm}^2$. Raman spectroscopy and DCXRD analysis were used to examine the crystallinity of Acheson seeds and the 6H-SiC wafers. As a result, the crystallinity of the 6H-SiC wafers was better than that of Acheson seeds. For examination of the electrical properties of the undopped 6H-SiC wafers Hall measurements were applied. According to the measurements the carrier concentration was estimated to be $3.91{\times}10^{15}/\textrm {cm}^3$ and doping type of the undopped. 6H-SiC wafers was n-type.