• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.186-186
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• 2000

After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.

• Journal of Information Display
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• v.7 no.4
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• pp.21-23
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• 2006

We developed a 4.5" 192${\times}$64 active matrix organic light-emitting diode display on a glass using organic thin-film transistor (OTFT) switching-arrays with two transistors and a capacitor in each sub-pixel. The OTFTs has bottom contact structure with a unique gate insulator and pentacene for the active layer. The width and length of the switching OTFT is 800${\mu}m$ and lO${\mu}m$ respectively and the driving OTFT has 1200${\mu}m$ channel width with the same channel length. On/off ratio, mobility, on-current of switching OTFT and on-current of driving OTFT were $10^6,0.3{\sim}0.5$ $cm^2$/V·sec, order of 10 ${\mu}A$ and over 100 ${\mu}A$, respectively. AMOLEDs composed of the OTFT switching arrays and OLEDs made using vacuum deposition method were fabricated and driven to make moving images, successfully.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.36 no.6C
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• pp.361-367
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• 2011

In this paper, we propose encryption method to using complemented MLCA(Maximum Length Cellular Automata) based on NBCA(Null Boundary CA) and 2D CAT (Two-Dimensional Cellular Automata Transform) for efficient image encryption. The encryption method is processed in the following order. First, a transition matrix T is created using the Wolfram Rule matrix. Then, the transition matrix T is multiplied to the original image that is intended to be encrypted, which transfers the pixel values of the original image. Furthermore, the converted original image goes through a XOR operation with complemented vector F to convert into a complemented MLCA applied image. Then, the gateway value is set and 2D CAT basis function is created. Also, the 2D CAT is encrypted by multiplying the created basis function to the complemented MLCA applied image. Lastly, the stability analysis verifies that proposed method holds a high encryption quality status.

• Journal of the Korean Society of Surveying, Geodesy, Photogrammetry and Cartography
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• v.35 no.1
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• pp.1-10
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• 2017

An UAV (Unmanned Aerial Vehicle) is a flight system that is designed to conduct missions without a pilot. Compared to traditional airborne-based photogrammetry, UAV-based photogrammetry is inexpensive and can obtain high-spatial resolution data quickly. In this study, we aimed to classify the land cover using high-spatial resolution images obtained using a UAV. An RGB camera was used to obtain high-spatial resolution orthoimage. For accurate classification, multispectral image about same areas were obtained using a multispectral sensor. A DSM (Digital Surface Model) and a modified NDVI (Normalized Difference Vegetation Index) were generated using images obtained using the RGB camera and multispectral sensor. Pixel-based classification was performed for twelve classes by using the RF (Random Forest) method. The classification accuracy was evaluated based on the error matrix, and it was confirmed that the proposed method effectively classified the area compared to supervised classification using only the RGB image.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.999-1002
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• 2004

We propose and simulate a new integrated DAC analog buffer composed of only p-type poly-Si TFTs in AMLCD and AMOLED. Proposed circuit employs a voltage level shifter which $V_{OUT}$ has a linear functional relation to $V_{IN}$. The proposed scheme enables to allow a constant $V_{GS}$ of buffer transistor so that the charging speed of pixel data address is improved.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.9 no.2
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• pp.144-150
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• 2000

Surface roughness is one of the most important parameters to estimate quality of products. As this reason so many studies were car-ried out through various attempts that were contact or non-contact using computer vision. Even through these efforts there were few good results in this research., however texture analysis making a important role to solve these problems in various fields including universe aviation living thing and fibers. In this study feature value of co-occurrence matrix was calculated by statistic method and roughness value of worked surface was classified, of it. Experiment was carried out using input vector of neural network with characteristic value of texture calculated from worked surface image. It's found that recognition rate of 74% was obtained when adapting texture features. In order to enhance recogni-tion rate combination type in characteristics value of texture was changed into input vector. As a result high recognition rate of 92.6% was obtained through these processes.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.449-451
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• 2000

Crosstalk is the primary cause of image distortion in active matrix liquid crystal displays (AMLCD). Crosstalk produces voltage errors that limit gray scale fidelity and consequently, degrades display resolution, contrast ratio, color fidelity, and image quality. In this study, crosstalk phenomena of some methods to compensate level shift voltages has been simulated. This will be contributed to find the way to design the excellent image quality of the TFT-LCDs.

• Journal of Biomedical Engineering Research
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• v.8 no.2
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• pp.171-176
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• 1987

Wiener filtering method was applied to the dual energy imaging procedure in digital radiography(D.R.). A linear scanning photodiode arrays with 1024 elements(0.6mm H 1.3mm pixel size) were used to obtain chest images in 0.7 sec. For high energy image acquisition, X-ray tube was set at 140KVp, 100mA with a rare-earth phosphor screen. Low energy image was obtained with X-ray tube setting at 70KVp, 150mA. These measured dual energy images are represented in the vector matrix notation as a linear discrete model including the additive random noise. Then, the object images are restored in the minimum mean square error sense using Wiener filtering method in the transformed domain. These restored high and low energy images are used for computation of the basis image decomposition. Then the basis images are linearly combined to produce bone or tissue selective images. Using this process, we could improve the signal to noise ratio characteristics in the material selective images.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.517-520
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• 2008

A voltage-programming pixel circuit, which compensates the threshold voltage shift of TFTs and the degradation of OLED, is proposed for large sized a-Si:H active matrix organic light emitting diode (AMOLED) applications. Considering threshold voltage variation (or shift), OLED degradation and reverse bias annealing, HSPICE simulation results indicate that luminance error of every gray level is less than 0.4 LSB under the condition of +1V threshold voltage shift and from -0.2 LSB to 2.6 LSB within 30% degradation of OLED in the case of 40-inch full HDTV condition.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1111-1114
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• 2006

We have developed a 2 inch LTPS-TFT AMOLED display with a top emission structure on a $50-{\mu}m-thick$ metal foil. The Active matrix back planes were fabricated with the p-channel LTPS TFT with a conventional pixel circuit consisting of 2 transistors and 1 capacitance. The p-channel TFTs on the metal foil exhibited the field-effect mobility of $22cm^2/Vs$. Finally, a images from prototype monochrome AMOLED displays are successfully presented, with $64{\times}88$ pixels and 56-ppi resolution.