• Journal of Information Display
• /
• v.6 no.1
• /
• pp.8-11
• /
• 2005

A flexible reflective cholesteric liquid crystal display (ChLCD) is fabricated on plastic substrates by using the pixel isolation method. The polymer walls between pixels and the polymer layers in the pixels are formed by two-step UV irradiation. Electro-optical response of the ChLCD with polymer wall and layer is studied and compared with conventional bistable ChLCD cells.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.879-882
• /
• 2009

A pixel isolation wall of liquid crystal display is fabricated by the anisotropic photoreaction of a cinnamate based prepolymer. The various oligomers containing a cinnamate moiety were synthesized and used for the formation of the pixel isolation wall. The anisotropic photoreaction of cinnamate moiety was closely related with the liquid crystal orientation at the polymer wall boundary.

• ETRI Journal
• /
• v.33 no.4
• /
• pp.580-588
• /
• 2011

This paper proposes reversible data hiding using minimum/maximum preserved overflow/underflow avoidance (MMPOUA). The proposed MMPOUA algorithm consists of three main steps. These steps include the minimum (or maximum) pixel fixing, pixel squeezing, and pixel isolation. The aims of pixel fixing are to keep the minimum (or maximum) pixel of a host block unchanged and prevent the occurrence of overflow/underflow. Both the pixel squeezing and pixel isolation supply hiding storage while keeping the amount of distortion low. The proposed method can avoid (or significantly reduce) the overhead bits used to overcome overflow/underflow issues. At an embedding rate of 0.15 bpp, the proposed algorithm can achieve a PSNR value of 48.52 dB, which outperforms several existing reversible data hiding schemes. Furthermore, the algorithm performed well in a variety of images, including those in which other algorithms had difficulty obtaining good hiding storage with high perceived quality.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2003.05a
• /
• pp.249-252
• /
• 2003

This paper propose an advanced circuit for fingerprint sensor signal processing. We increased the voltage between ridge and valley by modifying the parasitic capacitance eliminating circuit of sensor plate. The analog to comparator was designed for comparing the sensor signal voltage with the reference signal voltage. We also propose an exective isolation strategy for removing noise and signal coupling of each sensor pixel. The 128$\times$144 pixel fingerprint sensor circuit was designed and simulated, and the layout was performed.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.5 no.2
• /
• pp.102-106
• /
• 2005

A low dark current CMOS image sensor (CIS) pixel without any process modification is developed. Dark current is mainly generated at the interface region of shallow trench isolation (STI) structure. Proposed pixel reduces the dark current effectively by separating the STI region from the photodiode junction using simple layout modification. Test sensor array that has both proposed and conventional pixels is fabricated using 0.18 m CMOS process and the characteristics of the sensor are measured. The result shows that the dark current of the proposed pixel is 0.93fA/pixel that is two times lower than the conventional design.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.7 no.6
• /
• pp.1297-1303
• /
• 2003

This paper propose an advanced circuit for fingerprint sensor signal processing. We increased the voltage between ridge and valley by modifying the parasitic capacitance eliminating circuit of sensor plate. The analog comparator was designed for comparing the sensor signal voltage with the reference signal voltage. We also propose an effective isolation strategy for removing noise and signal coupling, ESD of each sensor pixel. The 128${\times}$l44 pixel fingerprint sensor circuit was designed and simulated, and the layout was performed.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.13 no.3
• /
• pp.531-536
• /
• 2009

In this paper, we propose $256{\times}256$ pixel array fingerprint sensor with an advanced circuits for detecting. The pixel level simple detection circuit converts from a small and variable sensing current to binary voltage out effectively. We minimizes an electrostatic discharge(ESD) influence by applying an effective isolation structure around the unit pixel. The sensor circuit blocks were designed and simulated in standard CMOS $0.35{\mu}m$ process. Full custom layout is performed in the unit sensor pixel and auto placement and routing is performed in the full chip.

• Current Optics and Photonics
• /
• v.7 no.5
• /
• pp.485-495
• /
• 2023

The pixel size in high-resolution complementary metal-oxide-semiconductor (CMOS) image sensors continues to shrink due to chip size limitations. However, the pixel pitch's miniaturization causes deterioration of optical performance. As one solution, a quad color filter (CF) array with pixel binning has been developed to enhance sensitivity. For high sensitivity, the microlens structure also needs to be optimized as the CF arrays change. In this paper, the covered microlens, which consist of four microlenses covered by one large microlens, are proposed for the quad CF array in the backside illumination pixel structure. To evaluate the optical performance, the suggested microlens structure was simulated from 0.5 ㎛ to 1.0 ㎛ pixels at the center and edge of the sensors. Moreover, all pixel structures were compared with and without in-pixel deep trench isolation (DTI), which works to distribute incident light uniformly into each photodiode. The suggested structure was evaluated with an optical simulation using the finite-difference time-domain method for numerical analysis of the optical characteristics. Compared to the conventional microlens, the suggested microlens show 29.1% and 33.9% maximum enhancement of sensitivity at the center and edge of the sensor, respectively. Therefore, the covered microlens demonstrated the highly sensitive image sensor with a quad CF array.

• Journal of Information Display
• /
• v.6 no.1
• /
• pp.1-7
• /
• 2005

We propose new fabrication methods of a pixel-isolated liquid crystal (LC) structure for flexible display applications. In the LC structure fabricated through the proposed method, the patterned interpixel walls for sustaining the cell thickness are supported by the solidified polymer layer through anisotropic phase separation of LC/polymer composite, causing the alignment of the LC molecules to have very good mechanical stability against external pressure. In addition, we show that such pixel-isolating walls can be made by the stamping method which can be applied to fabricate large size plastic LCDs by roll-to-roll processing.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2008.10a
• /
• pp.571-574
• /
• 2008

In this paper, we propose $256{\times}256$ pixel array fingerprint sensor with an advanced circuits for detecting. The pixel level simple detection circuit converts from a small and variable sensing current to binary voltage out effectively. We minimizes an electrostatic discharge(ESD) influence by applying an effective isolation structure. The sensor circuit blocks were designed and simulated in standard CMOS $0.35{\mu}m$ process. Full custom layout is performed in the unit sensor pixel and auto placement and routing is performed in the full chip.