• Title/Summary/Keyword: pixel array

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Development of a Temperature Sensor for OLED Degradation Compensation Embedded in a-IGZO TFT-based OLED Display Pixel (a-IGZO TFT 기반 OLED 디스플레이 화소에 내장되는 OLED 열화 보상용 온도 센서의 개발)

  • Seung Jae Moon;Seong Gyun Kim;Se Yong Choi;Jang Hoo Lee;Jong Mo Lee;Byung Seong Bae
    • Journal of Sensor Science and Technology
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    • v.33 no.1
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    • pp.56-61
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    • 2024
  • The quality of the display can be managed by effectively managing the temperature generated by the panel during use. Conventional display panels rely on an external reference resistor for temperature monitoring. However, this approach is easily affected by external factors such as temperature variations from the driving circuit and chips. These variations reduce reliability, causing complicated mounting owing to the external chip, and cannot monitor the individual pixel temperatures. However, this issue can be simply and efficiently addressed by integrating temperature sensors during the display panel manufacturing process. In this study, we fabricated and analyzed a temperature sensor integrated into an a-IGZO (amorphous indium-gallium-zinc-oxide) TFT array that was to precisely monitor temperature and prevent the deterioration of OLED display pixels. The temperature sensor was positioned on top of the oxide TFT. Simultaneously, it worked as a light shield layer, contributing to the reliability of the oxide. The characteristics of the array with integrated temperature sensors were measured and analyzed while adjusting the temperature in real-time. By integrating a temperature sensor into the TFT array, monitoring the temperature of the display became easier and more accurate. This study could contribute to managing the lifetime of the display.

Design of Gamma Camera with Diverging Collimator for Spatial Resolution Improvement (공간분해능 향상을 위한 확산형 콜리메이터 기반의 감마카메라 설계)

  • Lee, Seung-Jae;Jang, Yeongill;Baek, Cheol-Ha
    • Journal of the Korean Society of Radiology
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    • v.13 no.4
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    • pp.661-666
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    • 2019
  • Diverging collimators is used to obtain reduced images of an object, or to detect a wide filed-of-view (FOV) using a small gamma camera. In the gamma camera using the diverging collimators, the block scintillator, and the pixel scintillator array, gamma rays are obliquely incident on the scintillator surface when the source is located the periphery of the FOV. Therefore, the spatial resolution is reduced because it is obliquely detected in depth direction. In this study, we designed a novel system to improve the spatial resolution in the periphery of the FOV. Using a tapered crystal array to configure the scintillation pixels to coincide with the angle of the collimator's hole allows imaging to one scintillation pixel location, even if events occur to different depths. That is, even if is detected at various points in the diagonal direction, the gamma rays interact with one crystal pixel, so resolution does not degrade. The resolution of the block scintillator and the tapered crystal array was compared and evaluated through Geant4 Application for Tomographic Emission (GATE) simulation. The spatial resolution of the obtained image was 4.05 mm in the block scintillator and 2.97 mm in the tapered crystal array. There was a 26.67% spatial resolution improvement in the tapered crystal array compared to the block scintillation.

DOI Detector Design using Different Sized Scintillators in Each Layer (각 층의 서로 다른 크기의 섬광체를 사용한 반응 깊이 측정 검출기 설계)

  • Seung-Jae, Lee
    • Journal of the Korean Society of Radiology
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    • v.17 no.1
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    • pp.11-16
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    • 2023
  • In preclinical positron emisson tomography(PET), spatial resolution degradation occurs outside the field of view(FOV). To solve this problem, a depth of interaction(DOI) detector was developed that measures the position where gamma rays and the scintillator interact. There are a method in which a scintillation pixel array is composed of multiple layers, a method in which photosensors are arranged at both ends of a single layer, a method in which a scintillation pixel array is constituted in several layers and a photosensor is arranged in each layer. In this study, a new type of DOI detector was designed by analyzing the characteristics of the previously developed detectors. In the two-layer detector, different sizes of scintillation pixels were used for each layer, and the array size was configured differently. When configured in this form, the positions of the scintillation pixels for each layer are arranged to be shifted from each other, so that they are imaged at different positions in a flood image. DETECT2000 simulation was performed to confirm the possibility of measuring the depth of interaction of the designed detector. A flood image was reconstructed from a light signal acquired by a gamma-ray event generated at the center of each scintillation pixel. As a result, it was confirmed that all scintillation pixels for each layer were separated from the reconstructed flood image and imaged to measure the interaction depth. When this detector is applied to preclinical PET, it is considered that excellent images can be obtained by improving spatial resolution.

Auto-stereoscopic 60 view 3D using slanted Lenticular lens array

  • Im, Hee-Jin;Lee, Byung-Joo;Hong, Hyung-Ki;Shin, Hyun-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1500-1503
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    • 2007
  • Auto-stereoscopic 3D of 60-view number is made using slanted lenticular lens array and LCD of 15.1 inch diagonal size and 3200 by 2400 pixel numbers. Due to its large view number, smooth motion parallax is observed and the visual fatigue is reduced.

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Novel Structure of 21.6 inch a-Si:H TFT Array for the Direct X-ray Detector

  • Kim, Jong-Sung;Joo, In-Su;Choo, Kyo-Seop;Park, June-Ho;Chung, In-Jae
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.13-14
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    • 2000
  • 21.6" a-Si:H TFT array for direct conversion X-ray detector with 2480 by 3072 pixel is successfully developed. To obtain good X-ray image quality, novel structure, storage on BCB structure, is proposed. The structure reduces the parasitic capacitance of data line, one of the main sources of signal noise. Also, the structure shows higher failure resistance against defects than that of the old design.

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Development of High-Definition PDP TV with High-Efficient Hexagonal Array Structure

  • Lee, Byung-Hak;Heo, Eun-Gi;Yoon, Cha-Keun;Lee, Kwang-Sik;Cho, Yoon-Hyoung;Yoo, Min-Sun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.347-350
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    • 2003
  • Optimization of the luminance, luminous efficiency, and address voltage margin characteristics has been made on the delta color array PDP with various hexagonal shape subpixels. The optimal subpixel and electrode designs are obtained for the 42-inch high-definition PDP ($1,366{\times}768$) with the fine pixel pitch less than 0.7 mm. The hexagonal delta array structure shows more improved characteristics than that of the normal delta array structure with rectangular shape subpixels.

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A Fiber Laser Spectrometer Demodulation of Fiber Bragg Grating Sensors for Measurement Linearity Enhancement

  • Kim, Hyunjin;Song, Minho
    • Journal of the Optical Society of Korea
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    • v.17 no.4
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    • pp.312-316
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    • 2013
  • A novel fiber-optic sensor system is suggested in which fiber Bragg grating sensors are demodulated by a wavelength-sweeping fiber laser source and a spectrometer. The spectrometer consists of a diffraction grating and a 512-pixel photo-diode array. The reflected Bragg wavelength information is transformed into spatial intensity distribution on the photo-diode array. The peak locations linearly correspond to the Bragg wavelengths, regardless of the nonlinearities in the wavelength tuning mechanism of the fiber laser. The high power density of the fiber laser enables obtaining high signal-to-noise ratio outputs. The improved demodulation characteristics were experimentally demonstrated with a fiber Bragg grating sensor array with 5 gratings. The sensor outputs were in much more linear fashion compared with the conventional tunable band-pass filter demodulation. Also it showed advantages in signal processing, due to the high level of photo-diode array signals, over the broadband light source system, especially in measurement of fast varying dynamic physical quantities.

Array of Pentacene TFTs for AMOLED

  • Choe, Ki-Beom;Jung, Hyun;Ryu, Gi-Seong;Xu, Yong-Xian;Lee, Jae-June;Song, Chung-Kun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1424-1427
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    • 2005
  • In this paper, we studied on the application of Organic Thin Film Transistors (OTFTs) to the active matrix organic light emitting diodes (AMOLED). We designed organic transistor based pixel circuits for AMOLED. The pixel circuit is consisted of two-transistor, one-capacitor and one-OLED. We report the simulation results of the pixel circuits that OLED current varied as the data line and scan line voltage. Also, we will describe the fabrication process of the Pentacene OTFTs arrays and the organic light emitting diodes. The driving results of the fabricated unit pixels and their 4x4 arrays are also presented.

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Common Image Processing Techniques Comparison in Application (응용에서 영상처리 기술에 대한 비교)

  • Shin, Seong-Yoon;Jang, Dai-Hyeon;Rhee, Yang-Won
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2010.05a
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    • pp.612-613
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    • 2010
  • The common image processing method treat the image as the array of pixels, and every pixel with its eight neighbors who directly around it form a square neighbor domain, sometimes may be more than that such as $5{\times}5$, or $7{\times}7$, and then adopt the convolution and template for every possible pixel value and then divide a attenuation factor, restrict the result in the area between 0 and 255, while the original and processed value record respectively. During the whole procedure, the result sole exist and represent the processing without changing the original pixel.

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A CMOS active pixel sensor with embedded electronic shutter and A/D converter (전자식 셔터와 A/D 변환기가 내장된 CMOS 능동 픽셀 센서)

  • Yoon, Hyung-June;Park, Jae-Hyoun;Seo, Sang-Ho;Lee, Sung-Ho;Do, Mi-Young;Choi, Pyung;Shin, Jang-Kyoo
    • Journal of Sensor Science and Technology
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    • v.14 no.4
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    • pp.272-277
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    • 2005
  • A CMOS active pixel sensor has been designed and fabricated using standard 2-poly and 4-metal $0.35{\mu}m$ CMOS processing technology. The CMOS active pixel sensor has been made up of a unit pixel having a highly sensitive PMOSFET photo-detector and electronic shutters that can control the light exposure time to the PMOSFET photo-detector, correlated-double sampling (CDS) circuits, and an 8-bit two-step flash analog to digital converter (ADC) for digital output. This sensor can obtain a stable photo signal in a wide range of light intensity. It can be realized with a special function of an electronic shutter which controls the light exposure-time in the pixel. Moreover, this sensor had obtained the digital output using an embedded ADC for the system integration. The designed and fabricated image sensor has been implemented as a $128{\times}128$ pixel array. The area of the unit pixel is $7.60{\mu}m{\times}7.85{\mu}m$ and its fill factor is about 35 %.