• Title/Summary/Keyword: pipeline ADC

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A 12b 100 MS/s Three-Step Hybrid Pipeline ADC Based on Time-Interleaved SAR ADCs

  • Park, Jun-Sang;An, Tai-Ji;Cho, Suk-Hee;Kim, Yong-Min;Ahn, Gil-Cho;Roh, Ji-Hyun;Lee, Mun-Kyo;Nah, Sun-Phil;Lee, Seung-Hoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.2
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    • pp.189-197
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    • 2014
  • This work proposes a 12b 100 MS/s $0.11{\mu}m$ CMOS three-step hybrid pipeline ADC for high-speed communication and mobile display systems requiring high resolution, low power, and small size. The first stage based on time-interleaved dual-channel SAR ADCs properly handles the Nyquist-rate input without a dedicated SHA. An input sampling clock for each SAR ADC is synchronized to a reference clock to minimize a sampling-time mismatch between the channels. Only one residue amplifier is employed and shared in the proposed ADC for the first-stage SAR ADCs as well as the MDAC of back-end pipeline stages. The shared amplifier, in particular, reduces performance degradation caused by offset and gain mismatches between two channels of the SAR ADCs. Two separate reference voltages relieve a reference disturbance due to the different operating frequencies of the front-end SAR ADCs and the back-end pipeline stages. The prototype ADC in a $0.11{\mu}m$ CMOS shows the measured DNL and INL within 0.38 LSB and 1.21 LSB, respectively. The ADC occupies an active die area of $1.34mm^2$ and consumes 25.3 mW with a maximum SNDR and SFDR of 60.2 dB and 69.5 dB, respectively, at 1.1 V and 100 MS/s.

Range-Scaled 14b 30 MS/s Pipeline-SAR Composite ADC for High-Performance CMOS Image Sensors

  • Park, Jun-Sang;Jeong, Jong-Min;An, Tai-Ji;Ahn, Gil-Cho;Lee, Seung-Hoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.1
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    • pp.70-79
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    • 2016
  • This paper proposes a low-power range-scaled 14b 30 MS/s pipeline-SAR composite ADC for high-performance CIS applications. The SAR ADC is employed in the first stage to alleviate a sampling-time mismatch as observed in the conventional SHA-free architecture. A range-scaling technique processes a wide input range of 3.0VP-P without thick-gate-oxide transistors under a 1.8 V supply voltage. The first- and second-stage MDACs share a single amplifier to reduce power consumption and chip area. Moreover, two separate reference voltage drivers for the first-stage SAR ADC and the remaining pipeline stages reduce a reference voltage disturbance caused by the high-speed switching noise from the SAR ADC. The measured DNL and INL of the prototype ADC in a $0.18{\mu}m$ CMOS are within 0.88 LSB and 3.28 LSB, respectively. The ADC shows a maximum SNDR of 65.4 dB and SFDR of 78.9 dB at 30 MS/s, respectively. The ADC with an active die area of $1.43mm^2$ consumes 20.5 mW at a 1.8 V supply voltage and 30 MS/s, which corresponds to a figure-of-merit (FOM) of 0.45 pJ/conversion-step.

12-bit 10-MS/s CMOS Pipeline Analog-to-Digital Converter (12-비트 10-MS/s CMOS 파이프라인 아날로그-디지털 변환기)

  • Cho, Se-Hyeon;Jung, Ho-yong;Do, Won-Kyu;Lee, Han-Yeol;Jang, Young-Chan
    • Journal of IKEEE
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    • v.25 no.2
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    • pp.302-308
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    • 2021
  • A 12-bit 10-MS/s pipeline analog-to-digital converter (ADC) is proposed for image processing applications. The proposed pipeline ADC consists of a sample and hold amplifier, three stages, a 3-bit flash analog-to-digital converter, and a digital error corrector. Each stage is operated by using a 4-bit flash ADC (FADC) and a multiplying digital-to-analog converter (MDAC). The proposed sample and hold amplifier increases the voltage gain using gain boosting for the ADC with high resolution. The proposed pipelined ADC is designed using a 180-nm CMOS process with a supply voltage of 1.8 and it has an effective number of bit (ENOB) of 10.52 bits at sampling rate of 10MS/s for a 1-Vpp differential sinusoidal analog input with frequency of 1 MHz. The measured ENOB is 10.12 bits when the frequency of the sinusoidal analog input signal is a Nyquist frequency of approximately 5 MHz.

Open-Loop Pipeline ADC Design Techniques for High Speed & Low Power Consumption (고속 저전력 동작을 위한 개방형 파이프라인 ADC 설계 기법)

  • Kim Shinhoo;Kim Yunjeong;Youn Jaeyoun;Lim Shin-ll;Kang Sung-Mo;Kim Suki
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.30 no.1A
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    • pp.104-112
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    • 2005
  • Some design techniques for high speed and low power pipelined 8-bit ADC are described. To perform high-speed operation with relatively low power consumption, open loop architecture is adopted, while closed loop architecture (with MDAC) is used in conventional pipeline ADC. A distributed track and hold amplifier and a cascading structure are also adopted to increase the sampling rate. To reduce the power consumption and the die area, the number of amplifiers in each stage are optimized and reduced with proposed zero-crossing point generation method. At 500-MHz sampling rate, simulation results show that the power consumption is 210mW including digital logic with 1.8V power supply. And the targeted ADC achieves ENOB of about 8-bit with input frequency up to 200-MHz and input range of 1.2Vpp (Differential). The ADC is designed using a $0.18{\mu}m$ 6-Metal 1-Poly CMOS process and occupies an area of $900{\mu}m{\times}500{\mu}m$

A Capacitor Mismatch Error Cancelation Technique for High-Speed High-Resolution Pipeline ADC

  • Park, Cheonwi;Lee, Byung-Geun
    • IEIE Transactions on Smart Processing and Computing
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    • v.3 no.4
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    • pp.161-166
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    • 2014
  • An accurate gain-of-two amplifier, which successfully reduces the capacitor mismatch error is proposed. This amplifier has similar circuit complexity and linearity improvement to the capacitor error-averaging technique, but operates with two clock phases just like the conventional pipeline stage. This makes it suitable for high-speed, high-resolution analog-to-digital converters (ADCs). Two ADC architectures employing the proposed accurate gain-of-two amplifier are also presented. The simulation results show that the proposed ADCs can achieve 15-bit linearity with 8-bit capacitor matching.

A 15b 50MS/s CMOS Pipeline A/D Converter Based on Digital Code-Error Calibration (디지털 코드 오차 보정 기법을 사용한 15비트 50MS/s CMOS 파이프라인 A/D 변환기)

  • Yoo, Pil-Seon;Lee, Kyung-Hoon;Yoon, Kun-Yong;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.5
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    • pp.1-11
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    • 2008
  • This work proposes a 15b 50MS/s CMOS pipeline ADC based on digital code-error calibration. The proposed ADC adopts a four-stage pipeline architecture to minimize power consumption and die area and employs a digital calibration technique in the front-end stage MDAC without any modification of critical analog circuits. The front-end MDAC code errors due to device mismatch are measured by un-calibrated back-end three stages and stored in memory. During normal conversion, the stored code errors are recalled for code-error calibration in the digital domain. The signal insensitive 3-D fully symmetric layout technique in three MDACs is employed to achieve a high matching accuracy and to measure the mismatch error of the front-end stage more exactly. The prototype ADC in a 0.18um CMOS process demonstrates a measured DNL and INL within 0.78LSB and 3.28LSB. The ADC, with an active die area of $4.2mm^2$, shows a maximum SNDR and SFDR of 67.2dB and 79.5dB, respectively, and a power consumption of 225mW at 2.5V and 50MS/s.

Design of High Speed Pipelined ADC for System-on-Panel Applications (System-on-Panel 응용을 위한 고속 Pipelined ADC 설계)

  • Hong, Moon-Pyo;Jeong, Ju-Young
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.2
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    • pp.1-8
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    • 2009
  • We designed an ADC that operated upto 500Msamples/sec based on proposed R-string folding block as well as second folding block. The upper four bits are processed in parallel by the R-string folding block while the lower four bits are processed in pipeline structured second folding block to supply digital output. To verify the circuit performance, we conducted HSPICE simulation and the average power consumption was only 1.34mW even when the circuit was running at its maximum sampling frequency. We further measured noise immunity by applying linear ramp signal to the input. The DNL was between -0.56*LSB and 0.49*LSB and the INL was between -0.93*LSB and 0.72*LSB. We used 0.35 microns MOSIS device parameters for this work.

A 10b 100MS/s 27.2mW $0.8mm^2$ 0.18um CMOS Pipeline ADC with Various Circuit Sharing Schemes (다양한 회로 공유기법을 사용하는 10비트 100MS/s 27.2mW $0.8mm^2$ 0.18um CMOS Pipeline ADC)

  • Yoon, Kun-Yong;Lee, Se-Won;Choi, Min-Ho;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.4
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    • pp.53-63
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    • 2009
  • This work proposes a 10b 100MS/s 27.2mW $0.8mm^2$ 0.18um CMOS ADC for WLAN such as an IEEE 802.11n standard. The proposed ADC employs a three-stage pipeline architecture and minimizes power consumption and chip area by sharing as many circuits as possible. Two multiplying DACs share a single amplifier without MOS switches connected in series while the shared amplifier does not show a conventional memory effect. All three flash ADCs use only one resistor ladder while the second and third flash ADCs share all pre-amps to further reduce power consumption and chip area. The interpolation circuit employed in the flash ADCs halves the required number of pre-amps and an input-output isolated dynamic latch reduces the increased kickback noise caused by the pre-amp sharing. The prototype ADC implemented in a 0.18um n-well 1P6M CMOS process shows the DNL and INL within 0.83LSB and 1.52LSB at 10b, respectively. The ADC measures an SNDR of 52.1dB and an SFDR of 67.6dB at a sampling rate of 100MS/s. The ADC with an active die area of $0.8mm^2$ consumes 27.2mW at 1.8V and 100MS/s.

A 2.0-GS/s 5-b Current Mode ADC-Based Receiver with Embedded Channel Equalizer (채널 등화기를 내장한 2.0GS/s 5비트 전류 모드 ADC 기반 수신기)

  • Moon, Jong-Ho;Jung, Woo-Chul;Kim, Jin-Tae;Kwon, Kee-Won;Jun, Young-Hyun;Chun, Jung-Hoon
    • Journal of the Institute of Electronics and Information Engineers
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    • v.49 no.12
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    • pp.184-193
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    • 2012
  • In this paper, a 5-bit 2-GS/s 2-way time interleaved pipeline ADC for high-speed serial link receiver is demonstrated. Implemented as a current-mode amplifier, the stage ADC simultaneously processes the tracking and residue amplification to achieve higher sampling rate. In addition, each stage incorporates a built-in 1-tap FIR equalizer, reducing inter-symbol-interference (ISI)without an extra digital post-processing. The ADC is designed in a 110nm CMOS technology. It comsumes 91mW from a 1.2-V supply. The area excluding the memory block is $0.58{\times}0.42mm^2$. Simulation results show that when equalizer is enabled, the ADC achieves SNDR of 25.2dB and ENOB of 3.9bits at 2.0GS/s sample rate for a Nyquist input signal. When the equalizer is disengaged, SNDR is 26.0dB for 20MHz-1.0GHz input signal, and the ENOB of 4.0bits.

A 14b 100MS/s $3.4mm^2$ 145mW 0.18um CMOS Pipeline A/D Converter (14b 100MS/s $3.4mm^2$ 145mW 0.18un CMOS 파이프라인 A/D 변환기)

  • Kim Young-Ju;Park Yong-Hyun;Yoo Si-Wook;Kim Yong-Woo;Lee Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.5 s.347
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    • pp.54-63
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    • 2006
  • This work proposes a 14b 100MS/s 0.18um CMOS ADC with optimized resolution, conversion speed, die area, and power dissipation to obtain the performance required in the fourth-generation mobile communication systems. The 3-stage pipeline ADC, whose optimized architecture is analyzed and verified with behavioral model simulations, employs a wide-band low-noise SHA to achieve a 14b level ENOB at the Nyquist input frequency, 3-D fully symmetric layout techniques to minimize capacitor mismatch in two MDACs, and a back-end 6b flash ADC based on open-loop offset sampling and interpolation to obtain 6b accuracy and small chip area at 100MS/s. The prototype ADC implemented in a 0.18um CMOS process shows the measured DNL and INL of maximum 1.03LSB and 5.47LSB, respectively. The ADC demonstrates a maximum SNDR and SFDR of 59dB and 72dB, respectively, and a power consumption of 145mW at 100MS/s and 1.8V. The occupied active die area is $3.4mm^2$.