• Title/Summary/Keyword: pinning field

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Magnetic Properties of Transition Metal Doped La0.5Ca0.5(Mn0.98TM0.02)O3(TM=Cr, Ti) (전이금속을 치환한 란탄망간산화물계 La0.5Ca0.5(Mn0.98TM0.02)O3(TM=Cr, Ti)의 자성 특성 연구)

  • Kang, J.H.;Jun, S.J.;Park, J.S.;Lee, Y.P.;Lee, Y.S.
    • Journal of the Korean Magnetics Society
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    • v.17 no.1
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    • pp.14-17
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    • 2007
  • Magnetic properties of transition metal doped $La_{0.5}Ca_{0.5}(Mn_{0.98}TM_{0.02})O_3$(TM=Cr and Ti) are studied. The samples are synthesized by the conventional solid-state method. Using vibrating sample magnetometer magnetization-temperature measurement were carried out with zero field cooling and field cooling at 50 Oe. Cr-doped sample shows cluster or spin glass like behavior while Ti doped does not. Curie temperature obtained were decreased from that of LCMO(245.5 K). Curie temperatures of Cr-doped and Ti-doped samples are 235.5 K and 232.7 K, respectively. The temperature-dependent coercivity $H_c(T)$ was also measured. The coercive force continuously decreases with the substitution of Cr and Ti, The result can be understood in terms of the interaction between defect and domain wall.

(K,Na)NbO3-based Lead-free Piezoelectric Materials: An Encounter with Scanning Probe Microscopy

  • Zhang, Mao-Hua;Thong, Hao Cheng;Lu, Yi Xue;Sun, Wei;Li, Jing-Feng;Wang, Ke
    • Journal of the Korean Ceramic Society
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    • v.54 no.4
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    • pp.261-271
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    • 2017
  • Environment-friendly $(K,Na)NbO_3-based$ (KNN) lead-free piezoelectric materials have been studied extensively in the past decade. Significant progress has been made in this field, manifesting competitive piezoelectric performance with that of lead-based, for specific application scenarios. Further understanding of the relationship between high piezoelectricity and microstructure or more precisely, ferroelectric domain structure, domain wall pinning effect, domain wall conduction and local polarization switching underpins the continuous advancement of piezoelectric properties, with the help of piezoresponse force microscopy (PFM). In this review, we will present the fundamentals of scanning probe microscopy (SPM) and its cardinal derivative in piezoelectric and ferroelectric world, PFM. Some representative operational modes and a variety of recent applications in KNN-based piezoelectric materials are presented. We expect that PFM and its combination with some newly developed technology will continue to provide great insight into piezoelectric materials and structures, and will play a valuable role in promoting the performance to a new level.

Effects of Excess Yttrium Addition on YBCO Thin Films Prepared by TFA-MOD Process (MOD-TFA 공정에 의한 YBCO박막제조시 과잉 yttrium첨가 효과에 관한 연구)

  • Lee Seung-Yi;Song Seul-A;Kim Byeong-Joo;Park Jin-A;Kim Ho-Jin;Lee Hee-Gyoun;Hong Gye-Won;Jang Seog Heon;Joo Jinho;Yoo Jai-Moo;Pradeep Halder
    • Progress in Superconductivity
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    • v.7 no.1
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    • pp.87-91
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    • 2005
  • [ $YBa_{2}Cu_{3}O_{7-x}$ ] thin films were fabricated on $LaAlO_3$(100) substrate by TFA-MOD process. Yttrium-excess (0, 2.5, 5, 10, 15, 20 $at\%$) coating solution was prepared by adding extra amount of yttrium into a stoichiometric(Y:Ba:Cu=1:2:3) TFA precursor solution. Results are presented concerning the influence of excess yttrium additions on the microstructure development and superconducting properties of $YBa_{2}Cu_{3}O_{7-x}$ film. Large sized CuO particles was observed by SEM EDS investigation. The addition of excess yttrium affected little on $T_c$ of $YBa_{2}Cu_{3}O_{7-x}$ film. $J_c$ of YBCO film was enhanced with excess yttrium addition. Jc maximum of $2.21\;MA/cm^2$ (77 K, self field) appeared with the $15\;at\%$ addition of excess yttrium. With further yttrium addition up to $20\;at\%$, Jc decreased down to $0.9\;MA/cm^2$.

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Effect of MnO$_2$ addition on the piezoelectric properties in 0.9Pb($Mg_{1/3}Nb_{2/3}$)$O_3$-0.1Pb$TiO_3$relaxor ferroelectrics (0.9Pb($Mg_{1/3}Nb_{2/3}$)$O_3$-0.1Pb$TiO_3$계 완화형 강유전체에서 MnO$_2$ 첨가에 따른 압전물성의 변화)

  • Park, Jae-Hwan;Park, Jae-Gwan;Kim, Byung-Kook;Kim, Yoon-Ho
    • Korean Journal of Materials Research
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    • v.11 no.6
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    • pp.498-501
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    • 2001
  • The effects of MnO$_2$ addition on the piezoelectric properties in 0.9Pb($Mg_{1/3}Nb_{2/3}$)$O_3$-0.1Pb$TiO_3$ relaxor ferroelectrics were studied in the ferroelectricity-dominated temperature range from -4$0^{\circ}C$ to 3$0^{\circ}C$. Dielectric, piezoelectric properties and electric-field- induced strain were examined to clarify the effect of MnO$_2$ addition. As the added amount of MnO$_2$ increase. dielectric and piezoelectric properties of Pb(Mg$_{1/3}$ Nb$_{2/3}$O$_3$ became harder. From the experimental results, it was suggested that Mn behaves as a ferroelectric domain pinning element.

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Etch resist patterning of printed circuit board by ink jet printing technology (잉크젯 인쇄기술을 이용한 인쇄회로기판의 에칭 레지스터 패터닝)

  • Seo, Shang-Hoon;Lee, Ro-Woon;Kim, Yong-Sik;Kim, Tae-Gu;Park, Sung-Jun;Yun, Kwan-Soo;Park, Jae-Chan;Jeong, Kyoung-Jin;Joung, Jae-Woo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.108-108
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    • 2007
  • Inkjet printing is a non-contact and direct writing associated with a computer. In the industrial field, there have been many efforts to utilize the inkjet printing as a new way of manufacturing, especially for electronic devices. The etching resist used in this process is an organic polymer which becomes solidified when exposed to ultraviolet lights and has high viscosity of 300 cPs at ambient temperature. A piezoelectric-driven ink jet printhead is used to dispense $20-40\;{\mu}m$ diameter droplets onto the copper substrate to prevent subsequent etching. In this study, factors affecting the pattern formation such as printing resolution, jetting property, adhesion strength, etching and strip mechanism, UV pinning energy have been investigated. As a result, microscale Etch resist patterning of printed circuit board with tens of ${\mu}m$ high have been fabricated.

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Magnetoresistive of (NiFe/CoFe)/Cu/CoFe Spin-Valvec ((NiFe/CoFe)/Cu/CoFe Spin-Valve 박막의 자기저항 특성)

  • 오미영;이선영;이정미;김미양;이장로
    • Journal of the Korean Magnetics Society
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    • v.7 no.5
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    • pp.265-273
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    • 1997
  • The MR ratios and the exchange biasing field and interlayer coupling field were investigated in $Ni_{91}Fe_{19}/Co_{90}Fe_{10}/Cu/Co_{90}Fe_{10}/NiO$ spin-valve sandwiches grown on antiferromagnetic NiO films as a function of the NiO thickness, the thickness of Cu and pinning layer $Co_{90}Fe_{10}$. The spin-valve sandwiches were deposited on the Corning glass 7059 by means of the 3-gun dc and 1-gun rf magnetron sputtering at a 5 mtorrpartial Ar pressure and room temperature. The deposition field was 50 Oe. The MR curve was measured by the four-terminal method with applied magnetic soft bilayer [NiFe/CoFe] (90$\AA$) decreased dramatically to less than 10 Oe when the NiFe/CoFe bilayer used an NiFe bilayer thicker that 20$\AA$. So NiFe layer improved the softmagnetic properties in the NiFe/CoFe bilayer. The GMR ratio and the magnetic field sensitivity of the spin-valve film $Ni_{91}Fe_{19}(40{\AA})/Co_{90}Fe_{10}(50{\AA}) /Cu(30{\AA})/Co_{90}Fe_{10}(35{\AA})/NiO(800{\AA})$ was 6.3% and about 0.5 (%/Oe), respectively. The MR ratio had 5.3% below an annealing temperature of 20$0^{\circ}C$ which slowly decreased to 3% above 30$0^{\circ}C$. The large blocking temperature of the spin-valve film was taken (as being) due to the good stability of the NiO films. Thus, the spin-valve films with a free NiFe/CoFe layer clearly had a high large GMR output and showed a effective magnetic field sensitivity for a suitable spin-valve head material.

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Annealing Cycle Dependence of MR Properties for Free Layer in $Ni_{25}Mn_{75}-Spin$ Valve Films ($Ni_{25}Mn_{75}-Spin$ Valve 박막 자유층의 열처리 순환수에 따른 자기저항 특성)

  • 이낭이;이주현;이가영;김미양;이장로;이상석;황도근
    • Journal of the Korean Magnetics Society
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    • v.10 no.2
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    • pp.62-66
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    • 2000
  • Annealing cycle number and nonmagnetic layer thickness dependences of interlayer coupling field ( $H_{inf}$ ) and coercivity ( $H_{cf}$ ) of free magnetic layer on NiMn alloy-spin valve films (SVF) were investigated. The SVF is Glass (7059)/N $i_{81}$F $e_{l9}$(70 $\AA$)/Co(10 $\AA$)/Cu(t $\AA$)/Co(15 $\AA$)N $i_{81}$$Fe_{19}$(35 $\AA$)/N $i_{25}$M $n_{75}$(250 $\AA$)Ta(50 $\AA$) films, it were fabricated using the dc sputtering method at different pinning layer thickness and nonmagnetic spacer thickness (Cu thickness; 30 $\AA$, 35 $\AA$, 40 $\AA$) of NiMn alloy with 25 at.%. Ni In case that Cu thickness of SVF is 35 $\AA$ and peak exchange coupling field ( $H_{ex}$) was 620 Oe, while coercivity $H_{c}$ = 280 Oe and MR ratio showed 2.5%. As for $H_{inf}$ and $H_{cf}$ , every SVF increased up to the stabilized values with the increase of annealing cycle number 15, which were $H_{inf}$ of 120 Oe and $H_{cf}$ of 75 Oe. The increase of $H_{cf}$ with the annealing cycle number seems to be caused by the effective reduction of Cu layer thickness due to the increase of interfacial mixing of Cu layer and Co layer. In addition, the $H_{inf}$ and $H_{cf}$ dependences of free NiFe layer by the interfacial mixing effect were appeared the different aspects when Cu layer becomes more thinner and thicker than Cu layer thickness of 35 $\AA$, respectively.ively....

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Fabrication of Gd1.5Ba2Cu3O7-y Bulk Superconductors from the Powder Synthesized by a Solid-State Reaction Method (고상반응법으로 합성한 분말로부터 Gd1.5Ba2Cu3O7-y 벌크 초전도체의 제조)

  • Kim, Yong Ju;Park, Seung Yeon;You, Byung Youn;Park, Soon-Dong;Kim, Chan-Joong
    • Korean Journal of Materials Research
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    • v.23 no.6
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    • pp.309-315
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    • 2013
  • $GdBa_2Cu_3O_{7-y}$(Gd123) powders were synthesized by the solid-state reaction method using $Gd_2O_3$ (99.9% purity), $BaCO_3$ (99.75%) and CuO (99.9%) powders. The synthesized Gd123 powder and the Gd123 powder with $Gd_2O_3$ addition ($Gd_{1.5}Ba_2Cu_3O_{7-y}$(Gd1.5)) were used as raw powders for the fabrication of Gd123 bulk superconductors. The Gd123 and Gd1.5 bulk superconductors were fabricated by sintering or a top-seeded melt growth (TSMG) process. The superconducting transition temperature ($T_{c,onset}$) of the sintered Gd123 was 93 K and the transition width was as large as 20 K. The $T_{c,onset}$ of the TSMG processed Gd123 was 82 K and the transition width was also as large as 12 K. The critical current density ($J_c$) at 77 K and 0 T of the sintered Gd123 and TSMG processed Gd123 were as low as a few hundreds A/$cm^2$. The addition of 0.25 mole $Gd_2O_3$ and 1 wt.% $CeO_2$ to Gd123 enhanced the $T_c$, $J_c$ and magnetic flux density (H) of the TSMG processed Gd123 sample owing to the formation of the superconducting phase with high flux pinning capability. The $T_c$ of the TSMG processed Gd1.5 was 92 K and the transition width was 1 K. The $J_cs$ at 77 K (0 T and 2 T) were $3.2{\times}10^4\;A/cm^2$ and $2.5{\times}10^4\;A/cm^2$, respectively. The H at 77 K of the TSMG-processed Gd1.5 was 1.96 kG, which is 54% of the applied magnetic field (3.45 kG).