• Title/Summary/Keyword: piezoelectric thin film

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LTCC 기판을 이용한 PZT 압력 센서의 제작 및 특성 연구

  • Heo, Won-Yeong;Hwang, Hyeon-Seok;Lee, Tae-Yong;Lee, Gyeong-Cheon;Song, Jun-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.03b
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    • pp.13-13
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    • 2010
  • Piezoelectric sensors are extensively used to measure force because of their high sensitivity and low cost. however, the development of device with reduced size but with improved sensitivity is highly important. Low-temperature co-fired ceramic (LTCC) is one of promising materials for this application than a silicon substrate because it has very good electrical and mechanical properties as well as possibility of making various three dimensional (3D) structures. In this work, piezoelectric pressure sensors based on hybrid LTCC technology were presented. The LTCC diaphragms with thickness of $400\;{\mu}m$ were fabricated by laminating 12 green tapes which consist of alumina and glass particle in an organic binder. The piezoelectric sensing layer consists of PZT thin film deposited by RF magnetron sputtering method on between top and bottom Au electrodes. The PZT films deposited on LTCC diaphragms were successfully grown and were analyzed by using X-ray diffraction method (XRD) and field emission scanning electron microscope (FESEM).

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Dielectric and piezoelectric properties of Ag doped $Pb(Zr,Ti)O_3-Pb(Mn,W,Sb,Nb)O_3$ Ceramics (Ag첨가에 따른 $Pb(Zr,Ti)O_3-Pb(Mn,W,Sb,Nb)O_3$의 유전 및 압전 특성)

  • Chung, Hyun-Woo;Lim, Sung-Hun;Lee, Eun-Sun;Jeon, Chang-Sung;Lee, Sang-Yeol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.117-120
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    • 2004
  • The dielectric and piezoelectric properties of silver doped $Pb(Zr,Ti)O_3-Pb(Mn,W,Sb,Nb)O_3$ ceramics was examined. By varying the contents of silver(0.0, 0.4, 1.0 mol%), the effect of doped silver on PZT-PMWSN thin film was investigated at various sintering temperature(900, 1000, $1100^{\circ}C$). As increasing silver contents, the relative dielectric constant is increased and sinterbility is enhanced. At the specimen with 0.4 mol% Ag and sintered at $1100^{\circ}C$, electromechanical coupling factor(kp), mechanical quality factor(Qm), dielectric constant(${\varepsilon}r$) and dielectric loss were 0.502, 811, 991, 0.006, respectively. The results show that the PZT-PMWSN/Ag composites have enhanced piezoelectic and dielectric properties and processing condition is improved.

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Measurement of Residual Stress of AlN Thin Films Deposited by Two-Facing-Targets (TFT) Sputtering System (Two-Facing-Targets (TFT) 스퍼터링장치를 이용하여 증착한 AlN박막의 잔류응력 측정)

  • Han, Chang-Suk;Kwon, Yong-Jun
    • Korean Journal of Materials Research
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    • v.31 no.12
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    • pp.697-703
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    • 2021
  • Aluminum nitride having a dense hexagonal structure is used as a high-temperature material because of its excellent heat resistance and high mechanical strength; its excellent piezoelectric properties are also attracting attention. The structure and residual stress of AlN thin films formed on glass substrate using TFT sputtering system are examined by XRD. The deposition conditions are nitrogen gas pressures of 1 × 10-2, 6 × 10-3, and 3 × 10-3, substrate temperature of 523 K, and sputtering time of 120 min. The structure of the AlN thin film is columnar, having a c-axis, i.e., a <00·1> orientation, which is the normal direction of the glass substrate. An X-ray stress measurement method for crystalline thin films with orientation properties such as columnar structure is proposed and applied to the residual stress measurement of AlN thin films with orientation <00·1>. Strength of diffraction lines other than 00·2 diffraction is very weak. As a result of stress measurement using AlN powder sample as a comparative standard sample, tensile residual stress is obtained when the nitrogen gas pressure is low, but the gas pressure increases as the residual stress is shifts toward compression. At low gas pressure, the unit cell expands due to the incorporation of excess nitrogen atoms.

FBAR Device with Thin AlN Piezoelectric Film for 2 GHz RF Bandpass Filter Applications (2 GHz 대역 RF 대역통과 필터 응용을 위한 AlN 압전 박막을 이용한 FBAR 소자)

  • Giwan Yoon;Munhyuk Yim;Dongkyu Chai;Kim, Sanghee;Kim, Jongheon
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.7 no.2
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    • pp.250-254
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    • 2003
  • A film bulk acoustic resonator (FBAR) device for 2 GHz radio frequency (RF) bandpass filter application is presented. This FBAR device consists of an aluminum nitride (AlN) film sandwiched between top(Al) and bottom(Au) electrodes and an acoustic multilayer reflector of a silicon dioxide/tungsten (SiO2/W). The A/N film deposited using a RF sputtering was observed to have small columnar grains with a strongly preferred orientation towards c axis. In addition to a high quality factor (4300), a large return loss of 37.19 dB was obtained.

Study on Basic Characteristics of Hollow Piezoelectric Actuator for Driving Nanoscale Stamp (나노스템프 구동용 중공형 압전액추에이터 기본특성에 관한 연구)

  • Park, Jung-Ho;Lee, Hu-Seung;Lee, Jae-Jong;Yun, So-Nam;Ham, Young-Bog;Jang, Sung-Cheol
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.35 no.9
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    • pp.1015-1020
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    • 2011
  • Nanoimprint lithography has been actively investigated. This method can replicate a nanopatterned master stamp onto a thin polymer film on a silicon substrate and so on. In this study, a square-shaped hollow piezoelectric actuator is presented, which is newly developed. This actuator is used for driving a nanoscale stamp in nanoimprint lithography instead of a conventional electric motor. The fabricated prototype actuator has 95 layers and side lengths of 23 mm and 18 mm for the outer and inner squares, respectively. By adopting a novel process instead of the conventional forming process for fabricating a one-layer actuator, the one-layer is composed of four rectangular segments produced by sawing a ceramic film with a thickness of 0.3 mm. The basic characteristics on displacement and generation force of the fabricated prototype actuator are experimentally investigated. Furthermore, the displacement characteristics obtained by using a PI controller are tested and discussed.

Deposition of ZnO Thin Films by RF Magnetron Sputtering and Charcaterization of the ZnO thin film SAW filter (RF 마그네트론 스터터링에 의한 ZnO박막증착 및 SAW 필터 특성 분석)

  • Lee, Yong-Ui;Yang, Hyeong-Guk;Kim, Yeong-Jin;Han, Jeong-In;Kim, Hyeong-Jun
    • Korean Journal of Materials Research
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    • v.4 no.7
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    • pp.783-791
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    • 1994
  • Piezoelectric ZnO thin films were deposited on 7059 glass substrate by rf magnetron sputtering. The effects of deposition parameter, such as rf power, gas pressure and $O_{2}$/Ar gas ratio, on the crystallinity and electrical properties of the deposited ZnO thin films were studied. It was found that the deposition rate was higher than the previously reported values. ZnO films were suitable for SAW filter since a standard deviation of XRD (002) peak rocking curve was less than $6^{\circ}$. ZnO thin films, which were deposited at $O_{2}$/Ar ratio larger than 25%, showed high resistance. SAW filter was fabricated using ZnO film, of which thickness was 0.25 of the wavelength of the propatating surface acoustic wave. The measured frequency response was consistent with the calculated one. The SAW filter had center frequency 39.08 MHz, phase velocity 2501 m/sec and insertion loss 29 dB.

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Thin Film Bulk Acoustic Resonator(FBAR) Bandpass Filter Design Technique Using Genetic Algorithm (유전자알고리즘을 이용한 FBAR RF 대역통과여파기 설계기법)

  • 이정흠;김형동
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.40 no.3
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    • pp.10-17
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    • 2003
  • In this paper, genetic algorithm (GA)-based Thin Film Bulk Acoustic Resonator (FBAR) RF filter design technique is proposed. Since the BVD(Butterworth-Van Dyke) lumped element model is valid only around the resonance, FBAR filter design technique based on BVD circuit has an approximate error. Instead of using BVD model, optimizing filter design method utilizes an analytical electrical impedance equation of FBAR. The geometry of FBAR such as thickness of the piezoelectric layer and area which significantly affect the filter response is optimized by GA. US-PCS Rx Bandpass filter obtained by the proposed technique shows a better response comparing with the typical and BVD-based filter.

Characteristics of ZnO Thin Films of FBAR using ALD and RF Magnetron Sputtering (ALD와 RF 마그네트론 스퍼터링을 이용한 FBAR 소자의 ZnO 박막증착 및 특성)

  • Shin, Young-Hwa;Kwon, Sang-Jik;Yoon, Young-Soo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.2
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    • pp.164-168
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    • 2005
  • Piezoelectric ZnO thin films were for the first time formed on SiO$_2$/Si(100) substrate using 2-step deposition, atomic layer deposition(ALD) and RF magnetron sputtering deposition, for film bulk acoustic resonator(FBAR) applications. The ZnO buffer layer by ALD was deposited using alternating diethyl zinc(DEZn)/$H_2O$ exposures and ultrahigh purity argon gas for purging. The ZnO films by 2-step deposition revealed stronger c-axis-preferred orientation and smoother surface than those by the conventional RF sputtering method. The solidly mounted resonator(SMR)-typed FBAR fabricated by using 2-step deposition method revealed higher quality factor of 580 and lower return loss of -17.35dB. Therefore the 2-step deposition method in this study could be applied to the FBAR device fabrication.

Design of the Backlight Inverter for Large TFT-LCD Monitor & Manufacture of Multilayer Piezoelectric Transformer (TFT-LCD 모니터용 대출력 인버터설계와 적층형 압전 변압기 제작)

  • Han, Jae-Hyun;Lim, Young-Cheol;Yang, Seung-Hak;Kweon, Gie-Hyoun
    • Proceedings of the KIEE Conference
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    • 2002.04a
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    • pp.158-163
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    • 2002
  • 최근 전자통신기기의 급속화된 발전과 함께 전자부품에 대한 초소형화, 고성능화가 요구되고 있다. 특히 노트북 컴퓨터나, PDA, LCD 모니터와 같이 박막 액정 표시장치(Thin Film Transistor Liquid Crystal Display, TFT-LCD)가 대표적인 예라 볼 수 있다. 이러한 박막 액정 표시장치는 그 내부에 냉음극 형광램프(Cold Cathode Fluroscent Lamp)가 있어서 백라이트의 역할을 하는데 냉음극 형광램프의 특성상 초기 고압의 구동전압을 인가시킬 수 있는 인버터가 필수적이라 하겠다. 본 논문에서는 18인치(4_CCFL), 20인치(6_CCFL) TFT-LCD 모니터용, 멀티램프 구동 인버터를 설계 제작하여 90%에 가까운 효율을 얻었다. 코일손실 및 전자유도의 장애가 없고 불연성의 장점을 가지고, 소형화가 가능한 적층형 압전 변압기를 제작하고 이 제작된 적층형 압전 변압기의 전기적 특성분석을 통한 방전램프 구동용 인버터의 승압용 변압기로써 적용이 가능함을 확인하였다.

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Grain Orientation and Electrical Properties of $Sr_2Nb_2O_7$ Ceramics and Thin Films (다결정 및 박막형 $Sr_2Nb_2O_7$의 입자배향과 전기적특성)

  • 손창헌;전상재;남효덕;이희영
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.4
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    • pp.274-280
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    • 1998
  • Polycrystalline $Sr_2Nb_2O_7$ ceramics with very high Curie temperature were sintered using the powder derived by the chemical coprecipitation method (CCP). The phase evolution and grain-orientation of sintered samples were examined by XRD, while sintering behavior, dielectric properties and polarization were studied by SEM and ferroelectric tester. Extremely high degree of grain-orientation was observed along the (0k0) direction, which resulted in anisotropic dielectric properties of the sintered samples, with the dielectric constant values approaching those for single crystal. Thin film fabrication of $Sr_2Nb_2O_7$ in the pyroniobate family was also attempted on $SiO_2$/Si(100), Pt/$SiO_2$/Si(100), Pt/Ti/$SiO_2$/Si(100) and Pt/$ZrO_2/SiO_2/Si_2(100)$ substrates, using metalorganic decomposition (MOD) process. Neodecanoate precursor solution was prepared by mixing strontium neodecanoate with niobium neodecanoate synthesized from niobium ethoxide. It was found that $Sr_2Nb_2O_7$ single phase appeared in XRD patterns the samples annealed above $950^{\circ}C$. The effect of substrate type on film microstructure and dielectric properties was observed.

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