• Smart Structures and Systems
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• v.5 no.3
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• pp.279-290
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• 2009

Two degrees of freedom resonant systems are employed to improve the resonant property of resonant sensor, as compared to a single degree of freedom resonant system. This paper presents design, development and testing of two degrees of freedom resonant sensor. To measure absolute mass, cantilever shaped two different masses (smaller/absorber mass and bigger/drive mass) with identical resonant frequency are mechanically linked to form 2 - Degree-of-Freedom (DOF) resonator which exhibits higher amplitude of displacement at the smaller mass. The same concept is extended for measuring differential quantity, by having two bigger mass and one smaller mass. The main features of this work are the 3 - DOF resonator for differential detection and the microcontroller based closed loop electronics for resonant sensor with piezoelectric sensing and excitation. The advantage of using microcontroller is that the method can be easily extended for any range of measurand.

• ETRI Journal
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• v.21 no.4
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• pp.65-82
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• 1999

We present a calculation model for an improved quantitative theoretical analysis of electronic and optical properties of strained-piezoelectric[111] InGaAs/GaAs superlattices (SLs). The model includes a full band-coupling between the four important energy bands: conduction, heavy, light, and spin split-off valence bands. The interactions between these and higher lying bands are treated by the k ${\cdot}$ p perturbation method. The model takes into account the differences in the band and strain parameters of constituent materials of the heterostructures by transforming it into an SL potential in the larger band-gap material region. It self-consistently solves an $8{\times}8$ effective-mass $Schr{\ddot{o}}dinger$ equation and the Hartree and exchange-correlation potential equations through the variational procedure proposed recently by the present first author and applied to calculate optical matrix elements and spontaneous emission rates. The model can be used to further elucidate the recent theoretical results and experimental observations of interesting properties of this type of quantum well and SL structures, including screening of piezoelectric field and its resultant optical nonlinearities for use in optoelectronic devices.