• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.59-59
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• 2008

Pb(Zr,Ti)$O_3$(PZT)는 현재 가장 우수한 압전특성을 가진 압전 재료로써, 압전효과와 역압전효과를 이용한 압전 액추에이터, 압전 트랜스듀서, 센서, 레조네이터 등의 활동에 대한 연구과 활발하게 이루어 지고 있다. 그러나 압전성이 우수한 PZT 세라믹스들은 Pb 성분이 포함되어 있기 때문에 환경오염뿐 아니라, 경제적인 측면에서도 많은 문제점을 가지고 있어 최근에는 유해원소인 Pb를 포함하지 않는 친환경 압전 세라믹스에 관한 연구가 활발히 진행되고 있다. (Na, K)$NbO_3$은 뛰어난 특성을 가지고 있어 Pb를 기본조성으로 하는 압전세라믹스를 대체할 수 있는 대표적인 물질중의 하나로 알려져 있다. 그러나, potassium의 수분과의 반응성과, 소결시 휘발로 인해 높은 소결밀도의 NKN을 제조하기 어렵다. 이러한 단점을 보안하기 위해 Hot pressing, Hot forging, SPS 등 여러가지 방법을 이용하여 연구가 수행되고 있지만, 고가의 제조공정을 이용해야만 한다. 본 연구에서는 $BaSrTiO_3$의 새로운 고용체를 추가시켜 기본 NKN 조성보다 소결밀도, 유전 및 압전특성을 향상시키고자 하였다.

• Journal of the Korean Ceramic Society
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• v.37 no.9
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• pp.871-878
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• 2000

본 연구는 3mol% Pb(Sb$_{1}$2/Nb$_{1}$2/)O$_3$가 첨가된 상경계 영역의 Pb(Zr,Ti)O$_3$(PSN-PZT) 세라믹스에 대하여 RT66A와 광섬유센서를 이용하여, 교류강전계 하에서 압전 및 유전특성을 조사하였다. PSN-PZT 세라믹스의 압전 및 유전 특성에 미치는 non-180$^{\circ}$분역 재배열의 영향을 평가하기 위하여 RT66A와 MTI-2000 Fotonic$^{TM}$ sensor를 이용하여 인가전계와 주파수의 함수로 전계유기변위를 측정하였다. 그 결과, 교류강전계 하에서 전계유기변위는 강전계, 저주파수에서 큰 이력현상을 나타내고, 전계유기변위로부터 결정된 유효압전상수는 주파수가 감소할수록 증가하는 거동을 나타내고 있으며, 이러한 거동은 non-180$^{\circ}$분역 재배열의 영향으로 해석되었다.

• Applied Science and Convergence Technology
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• v.25 no.5
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• pp.88-91
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• 2016

The $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+xwt%PbO systems at temperature of $1250^{\circ}C$ for 4 hours was successful synthesized. In this study, PbO-doped $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$ systems with non-linear behaviors showed ordering-degree dependence at the low temperature range were prepared using the columbite precursor method. And the characteristic of remnant polarization vs. electric field were analyzed. The pyroelectric, dielectric and piezoelectric properties of partially disordered $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+xwt%PbO solid solutions were studied as a function of temperature, frequency, and electric field. It showed distinct features of temperature dependent of pyroelectric coefficient, spontaneous polarization and dielectric constant at about $50^{\circ}C$. The figure of merit was calculated as pyroelectric coefficient, dielectric constant and dissipation factor. It was found that the high voltage responsivity FV, high detectivity FD were $0.0373m^2/C$ and $0.6735{\times}10^{-4}Pa{-1/2}$, respectively, in the $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+3.0 wt%PbO system.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.5
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• pp.508-516
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• 1992

In this study, dielectric and piezoelectric properties of 0.05Pb(AlS12/3TWS11/3T)OS13T-0.95Pb(ZrS10.52TTiS10.48T)OS13T system ceramics were investigated with respect to the variations of MnOS12T and FeS12TOS13T additions amounts. The results obtained in this study are summarized as follows: 1. As the amounts of MnOS12T and FeS12TOS13T are increased, tetragonality(c/a) and apparent density were decreased but grain size was increased, also the limits of solubility were revealed because pores were formed at the amounts of 0.3wt% MnOS12T and 0.5wt% FeS12TOS13T. 2. AS the increasing of amounts of MnOS12T and FeS12TOS13T, the temperature of phase transition(TS1cT) was decreased, and pemeability had maximum value at the amount of 0.3wt% MnOS12T but were sharply decreasd for the increasing FeS12TOS13T amounts. 3. As the amounts of MnOS12T and FeS12TOS13T are increased, the electro-mechanical coupling factor(kS1pT) was decreased from 60% to 41%, 19% respectively, but mechanical quality factor(QS1mT) had maximum values 720 for amount of 0.3wt% MnOS12T and 320 the amount of 0.5wt% FeS12TOS13T.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.157-160
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• 2001

We have investigated the Dielectric and Piezoelectric properties of $xPb(R_{1/2}Ta_{1/2})O_3-(1-x)Pb(Zr_{0.52}Ti_{0.48})O_3$ (R=Al,Y) solid solutions in which R ions are substituted for Al and Y ions. The maximum value of electromechanical coupling factor kp of 55% and 51% were obtained at the composition of 5mol% PAT and 5mol% PYT. However mechanical quality factor$(Q_m)$ had a minimum value of 44 and 69 at the composition of 5mol% PAT and 5mol% PYT. Also, the maximum value of piezoelectctric constant of $d_{33}(329[pC/N])$ and $d_{33}(310[pC/N])$ were obtained at the composition of 5mol% PAT and 5mol% PYT.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.650-656
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• 1995

High frequency SAW filters for cellular communications were fabricated by metallizing 36$^{\circ}$Y-X LiTaO$_3$piezoelectric substrate with IIDT type electrodes. It was found that the center frequency of the filter was lowered than as designed. In order to overcome such a drawback and enable a fine tuning of its center frequency, dielectric SiN$_{x}$ thin films were deposited on LiTaO$_3$substrate by PECVD as passivation layer and then frequency responses were also characterized. As a result, the center frequency of the filter could be shifted to a higher frequency with increasing the thickness of SiN$_{x}$ film, because SAW velocity increased with increasing the ratio of the thickness of dielectric thin film to wavelength. The insertion loss of the filter, however, became larger with increasing the thickness of SiN$_{x}$ film.

• Journal of the Korean Ceramic Society
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• v.43 no.1 s.284
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• pp.42-47
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• 2006

In this paper, we prepared high-quality ZnO thin films for application of FBAR (Film Bulk Acoustic Resonator) by using pulse DC magnetron sputtering. To prevent the formation of low dielectric layers between metal and piezoelectric layer, Ru film of 30 nm thickness was used as a buffer layer. In addition we investigated the influence of annealing condition with various temperatures. As the annealing temperature increased, the crystalline orientation with the preference of (002) c-axis and resistance properties improved. The single resonator which was fabricated at $500^{\circ}C$ exhibited the resonance frequency and the return loss 0.99 GHz and 15 dB, respectively. This work demonstrates potential feasibility for the use of thin film Ru buffer layers and the optimization of annealing condition.

• Proceedings of the Acoustical Society of Korea Conference
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• spring
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• pp.275-278
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• 2000

In this study, the acoustic transducer of a thin circular disc-type with PZT/Metal was designed. The dielectric and piezoelectric properties of $0.5wt\%$ $MnO_2$ and NiO doped 0.1Pb($Mg_{1/3}$$Nb_{2/3}$)$O_3$-$0.45PbTiO_3$-$0.45PbZrO_3$ ceramics were investigated aiming at acoustic transducer applications. The vibration characteristics for the laminated circular plate was analyzed for the various thickness and diameter of the piezoceramic layer and metal layer. The acoustic characteristics which is radiated from the acoustic transducer within the finite space was simulated using the finite element method. It has been observed that the characteristics of the sound pressure ard impedance response calculated for the various models of the size and geometry of acoustic transducer.

• Journal of the Korean Ceramic Society
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• v.22 no.2
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• pp.17-24
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• 1985

In the composition of $Pb(Mg_{0.15} W_{0.15})Ti_{0.35}-Zr_{0.35}O_3$ the effect of particle size on PbO vaporization were measured, . The initial step of discontinuous vaporization of unreated PbO during the calcining process was depended on the particle size. All additives $La_2O_3Nb_2O_5$ and $Al_2O_3$ inhibited the grain growth of the composition $Pb(Mg_{0.15} W_{0.15})Ti_{0.35}-Zr_{0.35}O_3$ +2wt% excess PbO. The dielectric and piezoelectric properties of the composition $Pb(Mg_{0.15} W_{0.15})Ti_{0.35}-Zr_{0.35}O_3$ were improved by the addition of 2wt% excess PbO and proper additive. The electromechanical planar coupling factor of 0.65 and mechnical quality factor of 390 could be obtained by adding 5wt% $Nb_2O_5$ to the composition 2wt% excess PbO+$Pb(Mg_{0.15} W_{0.15})Ti_{0.35}-Zr_{0.35}O_3$.

• Journal of the Korean Ceramic Society
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• v.43 no.2 s.285
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• pp.106-113
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• 2006

PMN-PZT films with thickness of $5\;{\mu}m$ were deposited on $Pt/Ti/SiO_2/Si$ substrate at room temperature using aerosol deposition process. The films showed fairly dense microstructure without any crack. XRD and TEM analysis revealed that the films consisted of randomly oriented nanocrystalline and amorphous phases. Post-annealing process was employed to induce crystallization and grain growth of the as-deposited films and to improve the electrical properties. The annealed film showed markedly improved electrical properties in comparison with as-deposited film. The film after annealing at $700^{\circ}C$ for 1h exhibited the best electrical properties. Dielectric constant $(\varepsilon_r)$, remanent polarization $(P_r)$ and piezoelectric constant $(d_{33})$ were 1050, $13\;{\mu}C/cm^2$ and 120 pC/N, respectively.