• Geomechanics and Engineering
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• v.37 no.6
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• pp.577-590
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• 2024

With increasing demand for nuclear power generation, nuclear structures are being planned and constructed worldwide. A grave safety concern is that these structures are sensitive to large-magnitude shaking, e.g., during earthquakes. Seismic response analysis, which requires P- and S-wave velocities, is a key element in nuclear structure design. Accordingly, it is important to determine the P- and S-wave velocities in the Gyeongju and Pohang regions of South Korea, which are home to nuclear power plants and have a history of seismic activity. P- and S-wave velocities can be obtained indirectly through a correlation with physical properties (e.g., N values, Young's modulus, and uniaxial compressive strength), and researchers worldwide have proposed regression equations. However, the Gyeongju and Pohang regions of Korea have not been considered in previous studies. Therefore, a database was constructed for these regions. The database includes physical properties such as N values and P- and S-wave velocities of the soil layer, as well as the uniaxial compressive strength, Young's modulus, and P- and S-wave velocities of the bedrock layer. Using the constructed database, the geological characteristics and distribution of physical properties of the study region were analyzed. Furthermore, models for predicting P- and S-wave velocities were developed for soil and bedrock layers in the Gyeongju and Pohang regions. In particular, the model for predicting the S-wave velocity for the soil layers was compared with models from previous studies, and the results indicated its effectiveness in predicting the S-wave velocity for the soil layers in the Gyeongju and Pohang regions using the N values. The proposed models for predicting P- and S-wave velocities will contribute to predicting the damage caused by earthquakes.

• Proceedings of the Korea Water Resources Association Conference
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• 2006.05a
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• pp.2-11
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• 2006

In the processes of hydrological cycle, when precipitation reaches the ground surface, water may become surface runoff or infiltrate into soil and then possibly further percolate into groundwater aquifer. A part of the water is returned to the atmosphere through evaporation and transpiration. Soil moisture dynamics driven climate fluctuations plays a key role in the simulation of water transfer among ground surface, unsaturated zone and aquifer. In this study, a one-layer canopy and a four-layer soil representation is used for a coupled soil-vegetation modeling scheme. A non-zero hydraulic diffusivity between the deepest soil layer modeled and groundwater table is used to couple the numerical equations of soil moisture and groundwater dynamics. Simulation of runoff generation is based on the mechanism of both infiltration excess overland flow and saturation overland flow nested in a numerical model of soil moisture dynamics. Thus, a comprehensive hydrological model integrating canopy, soil zone and aquifer has been developed to evaluate water resources in the plain region of Huaihe River basin in East China and simulate water transfer among precipitation, surface water, soil moisture and groundwater. The newly developed model is capable of calculating hydrological components of surface runoff, evapotranpiration from soil and aquifer, and groundwater recharge from precipitation and discharge into rivers. Regional parameterization is made by using two approaches. One is to determine most parameters representing specific physical values on the basis of characterization of soil properties in unsaturated zone and aquifer, and vegetations. The other is to calibrate the remaining few parameters on the basis of comparison between measured and simulated streamflow and groundwater tables. The integrated modeling system was successfully used in the Linhuanji catchment of Huaihe plain region. Study results demonstrate that (1) on the average 14.2% of precipitation becomes surface runoff and baseflow during a ten-year period from 1986 to 1995 and this figure fluctuates between only 3.0% in drought years of 1986, 1988, 1993 and 1994 to 24.0% in wet year of 1991; (2) groundwater directly deriving from precipitation recharge is about 15.0% t of the precipitation amount, and (3) about half of the groundwater recharge flows into rivers and loses through evaporation.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.41 no.1
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• pp.142-155
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• 2016

In order to satisfy 5th generation mobile system's requirements, recently many works have been done in various layers. Especially in physical layer, new waveforms like Filter bank Multi-Carrier(FBMC), Universal Filtered Multi-Carrier(UFMC), Generalized Frequency Division Multiplexing(GFDM) have been proposed and their performance have been evaluated. But most previous researches have provided limited information by comparing couple new waveforms each other with different assumptions and simulation parameters. In this paper, we investigate the key technique of each 5G new waveform, and compare them in various aspects and the same simulation environment, and finally provide what waveform is appropriate in different application scenarios.

• Korean Journal of Materials Research
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• v.31 no.6
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• pp.353-366
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• 2021

In this study, photocatalytic degradation of ammonia in petrochemical wastewater is investigated by solar light photocatalysis. Two-dimensional ultra-thin atomic layer structured MoS₂ are synthesized via a simple hydrothermal method. We examine all prepared samples by means of physical techniques, such as SEM-EDX, HRTEM, FT-IR, BET, XRD, XPS, DRS and PL. And, we use fullerene modified MoS₂ nanosheets to enhance the activity of photochemically generated oxygen (PGO) species. Surface area and pore volumes of the MoS₂-fullerene samples significantly increase due to the existence of MoS₂. And, PGO oxidation of MB, TBA and TMST, causing its concentration in aqueous solution to decrease, is confirmed by the results of PL. The generation of reactive oxygen species is detected through the oxidation reaction from 1,5-diphenyl carbazide (DPCI) to 1,5-diphenyl carbazone (DPCO). It is found that the photocurrent density and the PGO effect increase in the case with modified fullerene. The experimental results show that this heterogeneous catalyst has a degradation of 88.43% achieved through visible light irradiation. The product for the degradation of NH₃ is identified as N₂, but not NO^2- or NO^3-.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.