• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.3
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• pp.107-115
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• 2009

Particular interest in the role of convection in vapor crystal growth has arisen since some single crystals under high gravity acceleration of $10g_0$ appear considerably larger than those under normal gravity acceleration ($1g_0$). For both ${\Delta}T=60\;K$ and 90 K, the mass flux increases by a factor of 3 with increasing the gravity acceleration from $1g_0$ up to $10g_0$. On the other hand, for ${\Delta}T=30\;K$, the flux is increased by a factor of 1.36 for the range of $1g_0{\leq}g{\leq}10g_0$. The maximum growth rates for $1g_0$, $4g_0$, $10g_0$ appear approximately in the neighborhood of y = 0.5, and the growth rates shows asymmetrical patterns, which indicate the occurrence of either one single or more than one convective cell. The maximum growth rate for $10g_0$ is nearly greater than that for $1g_0$ by a factor of 2.0 at $P_B=20\;Torr$. For three different gravity levels of $1g_0$, $4g_0$ and $10g_0$, the maximum growth rates are greater than the minimum rates by a factor of nearly 3.0, based on $P_B=20\;Torr$. The mass flux increases with increasing the gravity acceleration, for $1g_0{\leq}g_y{\leq}10g_0$, and decreases with increasing the partial pressure of component B, xenon (Xe), $P_B$. The $|U|_{max}$ is directly proportional to the gravity acceleration for $20\;Torr{\leq}P_B{\leq}300\;Torr$. As the partial pressure of $P_B$ (Torr) decreases from 300 Torr to 20 Torr, the slopes of the $|U|_{max}s$ versus the gravity accelerations increase from 0.1 sec to 0.17 sec. The mass flux of $Hg_2Cl_2$ is exponentially decayed with increasing the partial pressure of component B, $P_B$ (Torr) from 20 Torr up to 300 Torr.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.1
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• pp.20-26
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• 2013

Special attention in the role of convection in vapor crystal growth has been paid since some single crystals under microgravity environments less than 1 $g_0$ exhibits a diffusive-convection mode and much uniformity in front of the crystal regions than a normal gravity acceleration of 1 $g_0$. The total molar fluxes show asymmetrical patterns in interfacial distribution, which indicates the occurrence of either one single or more than one convective cell. As the gravitational level decreases form 1 $g_0$ down to $1.0{\times}10^{-4}\;g_0$, the intensity of convection, indicative of the maximum molar fluxes, is reduced significantly for ${\Delta}T=30K$ and 90 K. The total molar fluxes decay first order exponentially with the partial pressure of component B, PB (Torr) for 20 Torr ${\leq}PB{\leq}$ 300 Torr, and two gravity accelerations of $g_y=1\;g_0$ and 0.1 $g_0$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.4
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• pp.149-156
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• 2006

For an aspect ratio (transport length-to-width) of 5, Pr = 2.89, Le = 0.018, Pe = 2.29, Cv = 1.11, $P_B$=40 Torr, solutally buoyancy-driven convection $(Gr_s=3.03{\times}10^5)$ due to the disparity in the molecular weights of the component A $(Hg_2Cl_2)$ and B (He) is stronger than thermally buoyancy-driven convection $(Cr_t=1.66{\times}10^4)$. The crystal growth rate is decreased exponentially for $2.5\;{\leq}\;Ar\;{\leq}\;5$, with (1) the linear temperature profile and a fixed temperature difference, (2) the imposed thermal profile, a fixed crystal region and varied temperature difference. This is related to the finding that the effects of side walls tend to stabilize convection in the growth reactor. But, with the imposed thermal profile, a fixed source region and varied temperature difference, the rate is increased far $2\;{\leq}\;Ar\;{\leq}\;3$, and remains nearly unchanged for $3\;{\leq}\;Ar\;{\leq}\;5$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.230-233
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• 2001

FeSi2/Si Layer were grown using FeSi2, Si wafer by the chemical transport reactio nmethod. The directoptical energy gap was found to be 0.871eV at 300 K. The Hall effect is a physical effect arising in matter carrying electric current inthe presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. IN this paper, we study electrical properties of FeSi2/Si layer. And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it applicationVarious phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.234-237
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• 2001

FeSi2/Si Layer were grown using FeSi2, Si wafer by the chemical transport reactio nmethod. The directoptical energy gap was found to be 0.871eV at 300 K. The Hall effect is a physical effect arising in matter carrying electric current inthe presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. IN this paper, we study electrical properties of FeSi2/Si layer. And then we measured Hall coefficient Hall mobility,carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it applicationVarious phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.234-237
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• 2001

FeSi$_2$/Si Layer were grown using FeSi$_2$, Si wafer by the chemical transport reaction method. The directoptical energy gap was found to be 0.871ev at 300 K. The Hall effect is a physical effect arising in matter carrying electric current in the presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. In this paper, we study electrical properties of FeSi$_2$/Si layer And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important Part for it application Various phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.230-233
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• 2001

FeSi$_2$ Layer were grown using FeSi$_2$, Si wafer by the chemical transport reaction method. The directoptical energy gap was found to be 0.87leV at 300 K. The Hall effect is a Physical effect arising in matter carrying electric current in the presence of a magnetic field. The effect is named after the American physicist E.H. Hall, who discovered it in 1879. In this paper, we study electrical properties of FeSi$_2$/Si layer. And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it application various phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.207-207
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• 2006

We investigated the effects of hydrogen addition to the growth process of SiC single crystal using sublimation physical vapor transport(PVT) techniques. Hydrogen was periodically added to an inert gas for the growth ambient during the SiC bulk growth Grown 2"-SiC single crystals were proven to be the polytype of 6H-SiC and carrier concentration levels of about $10^{17}/cm^3$ was determined from Hall measurements. As compared to the characteristics of SiC crystal grown without using hydrogen addition, the SiC crystal without definitely exhibited lower carrier concentration and lower microplpe density as well as reduced growth rate.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.2
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• pp.50-57
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• 2004

Mercurous Bromide ($Hg_2Br_2$) crystals hold promise for many acousto-optic and opto-electronic applications. This material is prepared in closed ampoules by the physical vapor transport (PVT) growth method. We investigate the effects of solutal convection on the crystal growth rate in a horizontal configuration for diffusive-convection conditions and purely diffusion conditions achievable in a low gravity environment. Our results show that the growth rate is decreased by a factor of one-fourth with a ten reduction of gravitational acceleration near y = 2.0 cm. For 0.1 $g_O$ the growth rate pattern exhibits relatively flat which is intimately related to diffusion-dominated processes. The growth rate nonuniformity is regardless of aspect ratio across the interfacial positions from 0 to 1.5. Also, the effect of a factor of the ten reduction in the gravitational acceleration is same to both Ar = 5 and 2. The enlargement in the molecular weight of B from 50 to 500 by a factor 4 causes a decrease in the maximum growth rate by the same factor, indicative of the effect of solutal gradients.

• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.91-96
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• 2018

In this study temperature distribution and gas flow inside a planetary type reactor in which a number of satellites on a spinning susceptor were rotating were analyzed using numerical simulation. Effects of flow rates on gas flow and temperature distribution were investigated in order to obtain design parameters. The commercial computational fluid dynamics software CFD-ACE+ was used in this study. The multiple-frame-of-reference was used to solve continuity, momentum and energy conservation equations which governed the transport phenomena inside the reactor. Kinetic theory was used to describe the physical properties of gas mixture. Effects of the rotation speed of the satellites was clearly seen when the inlet flow rate was small. Thickness of the boundary layer affected by the satellites rotation became very thin as the flow rate increased. The temperature field was little affected by the incoming flow rate of precursors.