• 한국결정성장학회지
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• 제26권4호
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• pp.135-138
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• 2016

AlN 결정을 PVT(물리 기상 이동법, Physical Vapor Transport) 법으로 성장함에 있어 결정립의 성장 거동을 관찰하였다. 작은 AlN 결정립이 성장한 이후 결정립들은 이웃한 결정립과 합쳐지면서 성장하는 거동을 보였다. 이를 실체현미경을 이용하여 관찰한 결과를 보고하고자 한다.

• 한국의류학회지
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• 제22권1호
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• pp.72-79
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• 1998

Journal of the Korean Society of Clothing and Textiles Vol. 22, No. 1 (1998) p. 72∼79 The purpose of this study was to investigate the effects of geometrical structure and fiber type on the water vapor transport properties of nonwoven batting materials. Two types of fiber were used such as polyester and wool. Correlation between physical properties of nonwovens and water vapor transport rate was analyzed by Pearson Correlation. Steady and dynamic state water vapor transport properties were measured by absorption, evaporation and cobaltots chloride method respectively. The results were as follows: 1) In geometrical structure, thickness of nonwovens was effected on absorption and evaporation rate and air permeability was more influencing factor on water vapor transport rate than porosity. There were no decreasing of water vapor transport rate in hydrophilic fiber at high relative humudity. 2) The hydrophilicity of fiber affected steady and dynamic state water vapor permeabilities and wool nonwoven showed higher water vapor transport rate than polyester at high relative humidity. 3) Thickness showed higher correlation coefficient with water vapor transport rate than other physical properties of nonwovens.

• 한국결정성장학회지
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• 제13권4호
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• pp.187-198
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• 2003

Zinc selenide (ZnSe) single crystals hold promise for many electro-optics, acousto-optic and green laser generation applications. This material is prepared in closed ampoules by the physical vapor transport (PVT) growth method based on the dissociative sublimation. We investigate the effects of diffusive-convection on the crystal growth rate of ZnSe with a low vapor pressure system in a horizontal configuration. Our results show that for the ratios of partial pressures, s=0.2 and 2.9, the growth rate increases with the Peclet number and the temperature differences between the source and crystal. As the ratio of partial pressures approaches the stoichiometric value of 2, the rate increases. The mass fluk based on one dimensional (1D model) flow for low vapor pressure system fall within the range of the predictions (2D model) obtained by solving the coupled set of conservation equations, which indicates the flow fields would be advective-diffusive. Therefore, the rate and the flow fields are independent of gravity acceleration levels.

• 한국결정성장학회지
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• 제20권3호
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• pp.125-132
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• 2010

For typical governing dimensionless parameters of Ar = 5, Pr = 1.16, Le = 0.14, Pe = 3.57, Cv = 1.02, $Gr_s=2.65{\times}10^6$, the effects of thermo physical properties such as a molecular weight, a binary diffusivity coefficient, a partial pressure of component B on solutally buoyancy-driven convection (solutal Grashof number $Gr_s=2.65{\times}10^6$) are theoretically investigated for further understanding and insight into an essence of solutal convection occurring in the vapor phase during the physical vapor transport of a $Hg_2Cl_2-N_2$ system. The solutally buoyancy-driven convection is significantly affected by any significant disparity in the molecular weight of the crystal components and the impurity gas of nitrogen. The solutal convection in a vertical orientation is found to be more suppressed than a tenth reduction of gravitational accelerations in a horizontal orientation. For crystal growth parameters under consideration, the greater uniformity in the growth rate is obtained for either solutal convection mode in a vertical orientation or thermal convection mode in horizontal geometry. The growth rate is also found to be first order exponentially decayed for $10{\leq}P_B{\leq}200$ Torr.

• 한국결정성장학회지
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• 제19권3호
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• pp.116-124
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• 2009

Our computational studies for the physical vapor transport crystal growth of $Hg_2Cl_2-Cl_2$ system evidence suggests that the PVT growth process exhibits the diffusion-dominated behaviors for aspect ratios more than and equal to 10, which would provide purely diffusive transport conditions adequate to microgravity environments less than $10^{-3}g_0$. Also, the regimes of high temperature difference based on the fixed source temperature of $380^{\circ}C$, where ${\Delta}T$ is relatively large enough for the crystal growth of mercurous chloride, the transport rates do not keep increasing with ${\Delta}T$ but tend to some constant value of $2.12\;mole\;cm^{-2}s^{-1}$. For the aspect ratios of 5, 10, and 20, the transport rate is directly proportional to the total pressure of the system under consideration. For Ar = 5, the rate is increased by a factor of 2.3 with increasing the total pressure from 403 Torr to 935 Torr, i.e., by a factor of 2.3. For both Ar = 10 and 20, the rate is increased by a factor of 1.25 with increasing the total pressure from 403 Torr to 935 Torr.

• 한국결정성장학회지
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• 제24권2호
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• pp.54-58
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• 2014

PVT(물리 기상 이동법, Physical Vapor Transport) 법을 적용하여 질화알루미늄(AlN, Aluminum Nitride) 단결정을 성장하였으며, 성장된 결정의 결정성과 성장 온도에 따른 상에 대하여 고찰하였다. 성장된 단결정은 광학현미경을 이용하여 결정의 상을 관찰하였고, 관찰된 결과를 비교 분석하여 본 실험에 적용된 성장 장치에서의 최적의 성장 온도 조건을 설정할 수 있었다. 본 연구에서는 AlN 단결정 성장 결과를 비교 고찰하여 보고하고자 한다.

• 한국결정성장학회지
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• 제29권3호
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• pp.140-142
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• 2019

자외선 LED용 기판소재로 응용가능한 AlN(질화알루미늄) 단결정을 물리기상이동법(Physical Vapor Transport Method)으로 성장하기 위해 성장 거동을 조사하였다. 다결정의 종자결정을 사용하였으며, 직경은 3인치급이었고, 120시간 동안 성장공정을 수행하여 길이 약 4 mm의 다결정상을 얻었다. 본 연구에서는 성장 조건과 대형의 도가니를 사용하였을 경우의 성장 거동에 대하여 고찰하여 보고자 하였다.

• 한국결정성장학회지
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• 제20권3호
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• pp.117-124
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• 2010

For Ar=5, Pr=1.18, Le=0.15, Pe=2.89, Cv=1.06, $P_B$=20 Torr, the effects of impurity $(N_2)$ on thermally and solutally buoyancy-driven convection ($Gr_t=3.46{\times}10^4$ and $Gr_s=6.02{\times}10^5$, respectively) are theoretically investigated for further understanding and insight into an essence of thermo-solutal convection occurring in the vapor phase during the physical vapor transport. For $10K{\leq}{\Delta}T{\leq}50K$, the crystal growth rates are intimately related and linearly proportional to a temperature difference between the source and crystal region which is a driving force for thermally buoyancy-driven convection. Moreover, both the dimensionless Peclet number (Pe) and dimensional maximum velocity magnitudes are directly and linearly proportional to ${\Delta}T$. The growth rate is second order-exponentially decayed for $2{\leq}Ar{\leq}5$. This is related to a finding that the effects of side walls tend to stabilize the thermo-solutal convection in the growth reactor. Finally, the growth rate is found to be first order exponentially decayed for $10{\leq}P_B{\leq}200$ Torr.

• 한국결정성장학회지
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• 제32권1호
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• pp.16-24
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• 2022

A computational study of combined thermal and solutal convection (double diffusive convection) in a sealed crystal growth reactor is presented, based on a two-dimensional numerical analysis of the nonlinear and strongly coupled partial differential equations and their associated boundary conditions. The average Nusselt numbers for the source regions are greater than those at the crystal regions for 9.73 × 10³ ≤ Gr_t ≤ 6.22 × 10⁵. The average Nusselt numbers for the source regions varies linearly and increases directly with the thermal Grashof number form 9.73 × 10³ ≤ Gr_t ≤ 6.22 × 10⁵ for aspect ratio, Ar (transport length-to-width) = 1 and 2. Additionally, the average Nusselt numbers for the crystal regions at Ar = 1 are much greater than those at Ar = 2. Also, the occurrence of one unicellular flow structure is caused by both the thermal and solutal convection, which is inherent during the physical vapor transport of Hg₂Br₂. When the aspect ratio of the enclosure increases, the fluid movement is hindered and results in the decrease of thermal buoyancy force.

• 한국결정성장학회지
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• 제26권1호
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• pp.49-52
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• 2016

본 연구에서는 AlN 결정 성장시 중요한 공정변수 중의 하나인 성장 압력과 온도 조건에 따라 다르게 성장되는 AlN 결정상의 결과에 대하여 고찰하였다. AlN 결정 성장은 6H-SiC 종자 결정을 사용하여 PVT(Physical Vapor Transport)법을 적용하여 성장시켰다. 성장 압력과 온도에 따라 AlN 결정의 특성이 변화하였고, Raman 분석을 통해 다양한 방향을 갖는 AlN 결정이 SiC 종자 결정 위에 성장되는 것을 확인하였다.