• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.280.1-280.1
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• 2016

Generally InGaN/GaN green light emitting diode (LED) exhibits the low quantum efficiency (QE) due to the large lattice mismatch between InGaN and GaN. The QE of InGaN-based multiple quantum wells (MQWs) is drastically decreased when an emission wavelength shifts from blue to green wavelength, so called "green gap". The "green gap" has been explained by quantum confined Stark effect (QCSE) caused by a large lattice mismatch. In order to improve the QE of green LED, undoped graded short-period InGaN/GaN superlattice (GSL) and Si-doped GSL (SiGSL) structures below the 5-period InGaN/GaN MQWs were grown on the patterned sapphire substrates. The luminescence properties of InGaN/GaN green LEDs have been investigated by using photoluminescence (PL) and time-resolved PL (TRPL) measurements. The PL intensity of SiGSL sample measured at 10 K shows stronger about 1.3 times compared to that of undoped GSL sample, and the PL peak wavelength at 10 K appears at 532 and 525 nm for SiGSL and undoped GSL, respectively. Furthermore, the PL decay of SiGSL measured at 10 K becomes faster than that of undoped GSL. The faster decay for SiGSL is attributed to the increased wavefunction overlap between electron and hole due to the screening of piezoelectric field by doped carriers. These PL and TRPL results indicate that the QE of InGaN/GaN green LED with GSL structure can be improved by Si-doping.

• The Korean Journal of Ceramics
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• v.2 no.3
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• pp.137-141
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• 1996

Ambient air aged anodically etched porous silicon (PS) and spark-processed silicon (sp-Si) show interesting similarities and dissimilarities in some of their luminescence-related properties. Among these similarties are: (1) the photoluminescence (PL) peak maximum in the blue/violet (410 nm);(2) the blue/violet PL peak positions are essentially unchanged with temperature ; (3) PL decay times in the nanosecond region which are independent of the detection wavelength, which is much faster in decay times compared to that of observed decay time in $SiO_2$.Among the dissimilarities are: (1) the PL intensity of blue/violet luminescence, namely, the PL intensity of sp-Si is at least 2 orders of magnitude larger than that of an ambient air aged PS; (2) the blue/violet PL intensity of sp-Si is more stable than that of ambient air aged PS under UV illuminations; (3) FTIR spectra of sp-Si favor those modes, which involve silicon -oxygen bonds in $SiO_2$ stoichiometry, whereas ambient air aged PS can be considered as a nonstoichiometric oxide judging from the observed vibrational spectra.

• Journal of the Korean Ceramic Society
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• v.33 no.10
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• pp.1170-1176
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• 1996

Porous silicon was prepared by anodic reaction. The process was controlled by current density and etching time an the thickness change and the room temperature PL was measured. The thickness of porous silicon was increased with etching time and was decreased after critical time. It was the same as increasing current density. It needed only 15 sec to electropolish the surface of porous silicon above current density 70 mA/cm2. We can understand that increasing etching time leads narrow size of Si column by porous silicon formation mechanism. And the sample with narrow Si column revealed PL blue shift. The specimens were heated in the range of 300-1000$^{\circ}C$ in order to see PL changes. The heat treatment was proceeded in H2 atmosphere vacuum system to avoid oxidation. The PL was disappeared above 600$^{\circ}C$. In high temperature some sintered Si columns were observed in SEM photography. There was no difference of -Hx bonds which was suggested as evidence of hydride compounds luminescence between 500$^{\circ}C$ and 600$^{\circ}C$. Thus it is concluded that quantum confinement is major factor of PL of porous silicon.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.104-111
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• 1998

The InGaAs/InP quantum wells(QWs) were grown by low pressure metalorganic chemical vapor deposition and the effects of growth interruption steps on their interfacial structures were investigated by measuring photoluminescence spectra. When InP or InGaAs surface was treated under the same group V ambient, the full width at half maximum (FWHM) of the QW peak increased possibly due to the incorporation of impurities during the growth interruption time. When InP surface was treated under $AsH_3$, howerer, the PL peak showed red-shift due to the As-P exchange reaction and the change of FWHM was not remarkable. The effective thickness of InAs interfacial layer formed during $AsH_3$, treatment on the InP surface was calculated to be 1~2 monolayers. In the case of InGaAs treatment under $PH_3$, the PL peak energy and the FWHM increasied. This results suggest that $PH_3$ treatment on the InGaAs surface suppresses the incorporation of As into the subsequent InP layer and the local replacement of As by P occurs simultaneously.

• Journal of the Korean Vacuum Society
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• v.13 no.3
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• pp.103-108
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• 2004

High-quality ZnO films were grown on sapphire (001) substrates by the atomic layer epitaxy (ALE) technique using DEZn as a Zinc precusor and $H_2O $ as an oxidant at both $170^{\circ}C$ and $400^{\circ}C$ which are in the ALE and the CVD process temperature ranges, respectively. The films were annealed in an oxygen atmosphere in the temperature range from 600 to 100$0^{\circ}C$ for an hour and then investigate photoluminescence (PL) properties using He-Cd laser. PL intensity tends to increases as the annealing temperature increase for both the annealed ZnO films grown at $170^{\circ}C$ and $400^{\circ}C$ , while PL did not nearly occur at the as-deposited ones. The PL intensity of the ZnO film grown at $400^{\circ}C$ is low after it is annealed at high temperature owing to a large number of Zn-Zn bonds although it has increased in the visible light wavelength region after annealing. In contrast the PL intensity has increased significant in the visible light region after annealing

• Journal of the Korean Vacuum Society
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• v.22 no.2
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• pp.86-91
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• 2013

The optical properties of InAs quantum dots (QDs) grown on GaAs substrates grown by molecular beam epitaxy have been studied using photoluminescence (PL) and time-resolved PL measurements. InAs QDs were grown using an arsenic interruption growth (AIG) technique, in which the As flux was periodically interrupted by a closed As shutter during InAs QDs growth. In this study, the shutter of As source was periodically opened and closed for 1 (S1), 2 (S2), or 3 s (S3). For comparison, an InAs QD sample (S0) without As interruption was grown in a pure GaAs matrix for 20 s. The PL intensity of InAs QD samples grown by AIG technique is stronger than that of the reference sample (S0). While the PL peaks of S1 and S2 are redshifted compared to that of S0, the PL peak of S3 is blueshifted from that of S0. The increase of the PL intensity for the InAs QDs grown by AIG technique can be explained by the reduced InAs clusters, the increased QD density, the improved QD uniformity, and the improved aspect ratio (height/length). The redshift (blueshift) of the PL peak for S1 (S3) compared with that for S0 is attributed to the increase (decrease) in the QD average length compared to the average length of S0. The PL intensity, PL peak position, and PL decay time have been investigated as functions of temperature and emission wavelength. S2 shows no InAs clusters, the increased InAs QD density, the improved QD uniformity, and the improved QD aspect ratio. S2 also shows the strongest PL intensity and the longest PL decay time. These results indicate that the size (shape), density, and uniformity of InAs QDs can be controlled by using AIG technique. Therefore the emission wavelength and luminescence properties of InAs/GaAs QDs can also be controlled.

• Journal of Integrative Natural Science
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• v.2 no.1
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• pp.28-31
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• 2009

We describe the synthesis and characterization of silicon nanoparticles prepared by the soluton reduction of SiCl4. These reactions produce Si nanoparticles with surfaces that are covalently terminated. The resultant organic derivatized Si nanoparticles as well as a probable distribution of Water-soluble Si nanoparticles are observed and characterized by photoluminescence(PL) spectroscopy. This work focuses originally on the organic- and water-soluble silicon nanoparticles in terms of the photoluminescence. Further this work displays probably the first layout of hydrogen terminated Si nanoparticles synthesized in solution at room temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.603-609
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• 2008

Photoluminescence (PL) of neutron-irradiated GaN films and nanowires is investigated in this study. The GaN films and nanowires were irradiated by neutron beams in air at room temperature, and the neutron-irradiated films and nanowires were annealed in an atmosphere of $NH_3$ at temperatures ranging from 500 to $1100^{\circ}C$. The line-shapes of the PL spectra taken from the neutron-irradiated GaN films and nanowires were changed differently with increasing annealing temperature. In this study, light-emitting centers created in the neutron-irradiated GaN films and nanowires are examined and their origins are discussed. In addition, it is suggested here that the neutron-transmutation-doping is a simple and useful means of homogeneous impurity doping into nanowires with control of the doping concentration.

• Journal of the Korean institute of surface engineering
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• v.35 no.5
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• pp.305-311
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• 2002

Optical measurements have been used to study the biaxial tensile strain in heteroeptaxial ZnTe epilayers on the (100) GaAs substrate by hot wall epitaxy (HWE) with Zn reservoir. It is effect on the low-temperature photoluminescence spectrum of the material. Optimum growth condition has been determined by a four-crystal rocking curve (FCRC) and a low temperature photoluminescence measurement (PL). It was found that Zn partial pressure from Zn reservoir has a strong influence on the quality of grown films. Under the determined optimum growth condition, ZnTe epitaxial films with thickness of 0.72~24.8$\mu\textrm{m}$ were grown for studying the effect of the thickness on crystalline quality. The PL and FCRC results indicated that the quality of ZnTe films becomes higher rapidly with increase of thickness up to 6$\mu\textrm{m}$. The best value of the FWHM of the four crystal rocking curve, 66 arcsec, was obtained on the film with 12$\mu\textrm{m}$ in thickness. The PL spectrum shows the splitted strong free exciton emissions and very weak deep band emissions. These results show the high quality of films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.202-205
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• 2002

The photoluminescence (PL) characteristics of the silicon-oxygen(Si-O) superlattice formed by molecular beam epitaxy (MBE) were studied. To confirm the presence of the nanocrystalline Si structure, Raman scattering measurement was performed. The blue shift was observed in the PL peak of the oxygen-annealed sample, compared to the hydrogen-annealed sample, which is due to a contribution of smaller crystallites. Our results determine the right direction for the fabrication of silicon-based optoelectronic and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in high-speed and low-power silicon MOSFET devices in the future.