• Journal of the Optical Society of Korea
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• 제20권6호
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• pp.694-697
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• 2016

Up-converted phase noise, which is induced by the low-frequency relative intensity noise (RIN) of a laser through AM-PM conversion within a photodetector (PD), is first measured here by means of a cross-correlation method. Our proposed measurement system can isolate the RIN-induced phase noise from noise contributions of other components, such as amplifiers, modulators, and mixers. In particular, shot noise and thermal noise generated from the PD are also suppressed by this method, so that standalone characteristics of the RIN-induced phase noise can be obtained. Experimental results clearly show the quantitative relationship between the RIN-induced phase noise and the incident optical power of the PD. Our findings indicate that the least RIN-induced phase noise appeared at the saturation point of the PD, which is about -162 dBc/Hz at 10 kHz offset.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.2312-2314
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• 2005

For the upcoming nano-bio technology(NBT), we suggested InAs self-assembled quantum dot enhanced resonant-cavity avalanche type photodetector to detect near infrared(NIR) wavelength. To confirm the feasibility of RC-APD structure, we have simulated using conventional simulator.

• Current Optics and Photonics
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• 제3권4호
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• pp.336-341
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• 2019

This paper proposes an optical system where the organic compound content in water is determined by using an ultraviolet (UV) LED (280 nm) and photodetector. The results obtained by the proposed prototype LED spectroscopy system, which includes a single photodetector and two parallel sample holders, are calculated by applying partial least square regression; the values are highly correlated with the actual concentrations of potassium hydrogen phthalate solutions, with an adjusted coefficient of determination about 0.996. Moreover, the total organic carbon values derived from the UV-Vis spectrometer of real samples (lake, river and sea water) differed little from those obtained by the LED spectroscopy. We confirm that the fast, sensitive, and compact LED sensor system can be readily configured for real-time monitoring of organic compounds in water.

• 한국재료학회지
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• 제32권8호
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• pp.333-338
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• 2022

In this work, we developed silver nanowires and a silicon based Schottky junction and demonstrated ultrafast broadband photosensing behavior. The current device had a response speed that was ultrafast, with a rising time of 36 ㎲ and a falling time of 382 ㎲, and it had a high level of repeatability across a broad spectrum of wavelengths (λ = 365 to 940 nm). Furthermore, it exhibited excellent responsivity of 60 mA/W and a significant detectivity of 3.5 × 10¹² Jones at a λ = 940 nm with an intensity of 0.2 mW cm^-2 under zero bias operating voltage, which reflects a boost of 50 %, by using the AC PV effect. This excellent broadband performance was caused by the photon-induced alternative photocurrent effect, which changed the way the optoelectronics work. This innovative approach will open a second door to the potential design of a broadband ultrafast device for use in cutting-edge optoelectronics.

• 한국광학회:학술대회논문집
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• 한국광학회 2008년도 동계학술발표회 논문집
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• pp.99-100
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• 2008

• 한국고분자학회지:고분자과학과기술
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• 제25권6호
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• pp.521-524
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• 2014

• 한국광학회:학술대회논문집
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• 한국광학회 2002년도 제13회 정기총회 및 2002년도 동계학술발표회
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• pp.188-189
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• 2002

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.93.2-93
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• 1998

• 센서학회지
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• 제21권6호
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• pp.413-419
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• 2012

A dynamic range extension technique is proposed based on a 3-transistor active pixel sensor (APS) with gate/body-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector using a feedback structure. The new APS consists of a pseudo 3-transistor APS and an additional gate/body-tied PMOSFET-type photodetector, and to extend the dynamic range, an NMOSFET switch is proposed. An additional detector and an NMOSFET switch are integrated into the APS to provide negative feedback. The proposed APS and pseudo 3-transistor APS were designed and fabricated using a $0.35-{\mu}m$ 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) process. Afterwards, their optical responses were measured and characterized. Although the proposed pixel size increased in comparison with the pseudo 3-transistor APS, the proposed pixel had a significantly extended dynamic range of 98 dB compared to a pseudo 3-transistor APS, which had a dynamic range of 28 dB. We present a proposed pixel that can be switched between two operating modes depending on the transfer gate voltage. The proposed pixel can be switched between two operating modes depending on the transfer gate voltage: normal mode and WDR mode. We also present an imaging system using the proposed APS.

• 한국자기학회지
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• 제18권2호
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• pp.71-74
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• 2008

본 논문에서는 4분할 광 검출기 상에 입사된 광점의 크기에 따른 optical beam deflection방식에서의 변위 측정감도의 변화에 대해 살펴보았다. 3mW의 헬륨-네온 레이저를 사용하여 optical beam deflection방식의 광학적 변위 측정 장치를 제작하였으며 광 검출기에 도달하는 광점의 크기를 변화시켜가며 제작된 변위 측정 장비가 나타내는 변위 측정감도를 관찰하였다. 또한 광 검출기에 도달하는 optical beam power를 원형의 균일한 분포를 지닌 광점으로 설정하여 광점 크기의 변화에 따른 변위 측정감도를 계산하였다. 측정된 결과와 계산을 통하여 검출기 상에 입사하는 광점의 크기가 작을수록 변위 측정감도가 증가함을 알 수 있었으며 이는 나노미터 급의 변위측정 장비 개발에 있어 광 검출기에 도달하는 광점의 크기를 최소화함으로써 변위 측정감도를 최적화 할 수 있음을 나타낸다.