• YAKHAK HOEJI
• /
• v.46 no.5
• /
• pp.331-336
• /
• 2002

The purpose of this study is to develop a non-invasive blood glucose measurement method by a portable near infrared (NIR) system which was newly integrated by our lab. The portable NIR system includes a tungsten halogen lamp, a specialized reflectance fiber optic probe and a photo diode array type InGaAs detector; which was developed by a microchip technology based on the lithography. Reflectance NIR spectra of different parts of human body (finger tip, earlobe, and inner lip) were recorded by using a fiber optic probe. The spectra were collected over the spectral range 1100 ∼ 1740 nm. Partial least squares regression (PLSR) was applied for the calibration and validation for the determination of blood glucose. The calibration model from earlobe spectra presented better results, showing good correlation with a glucose oxidase method which is a mostly used standard method. This model predicted the glucose concentration for validation set with a SEP of 33 mg/dL. This study indicated the feasibility for non-invasive monitoring of blood glucose by a portable near infrared system.

• Journal of the Optical Society of Korea
• /
• v.10 no.2
• /
• pp.91-95
• /
• 2006

Blood pressure was predicted from photoplethysmography (PPG). To obtain PPG, backscattered light from a fingertip was measured and its waveform was analyzed. Systolic upstroke time and diastolic time in the pulse waveform were used as parameters to predict blood pressure. The experiment was carried out with five subjects on five different days. The systolic upstroke time had a correlation coefficient of -0.605 with respect to systolic blood pressure and the diastolic time had a correlation coefficients of -0.764 for diastolic pressure. This PPG method does not require an air-cuff installation on the arm and can predict blood pressure continuously. This simple LED/photo detector setup can be a good candidate for nonconstrained monitoring of blood pressure variations.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.51 no.6
• /
• pp.240-245
• /
• 2002

In this paper, a novel optical measuring system for the measurement of nonuniform electric field was proposed. The electric field distorted by the discharges was detected through proposed optical measuring system based on the Pockets effect and Mach-Zehnder interferometer. In order to produce distorted electric field, corona discharge was generated from needle-plane electrode in air and detected by optical measuring system. This optical measuring system is constructed by He-Ne laser, single mode optical fiber, $2{\times}2$ 50/50 beam splitter, $LiNbO_3$ Pockets cell, photo detector and PC. In this system, output signal of Pockels sensor is measured by digital oscilloscope and transferred to the PC for recording and statistical processing. Through this paper, a promising possibilities of proto-type optical measuring system were evinced.

• Journal of Sensor Science and Technology
• /
• v.24 no.2
• /
• pp.93-95
• /
• 2015

We present an optical detection method for the fundamental vibrational mode of a tuning fork crystal oscillator in air. A focused He/Ne laser beam is directed onto the edge of one vibrating tine of the tuning fork; its vibrating motion chops the incoming laser beam and modulates the intensity. The beam with modulated intensity is then detected and converted to an electrical signal by a high-speed photo-detector. This electrical signal is a sinusoid at the resonant frequency of the tuning fork vibration, which is 32.76 kHz. Our scheme is robust enough that the sinusoidal signal is detectable at up to $40^{\circ}$ of rotation of the tuning fork.

• 연구논문집
• /
• s.31
• /
• pp.135-147
• /
• 2001

The wall-thickness of insulated pipelines can be easily evaluated by measuring the gamma-ray transmission intensity because this intensity is inversely proportional to the thickness of insulated pipeline. The main purpose of this study is to develop the nondestructive and filmless on-line inspection system of corrosion by measuring the wall thickness of insulated pipeline. The inspection system is constructed with radioisotope, 64 channel photo diode array detector, crawler system and data taking and operating software. The traditional off-line radiographic method carried out by exposing film cassettes can be replaced by this cost-effective on-line digital imaging method and the application will be greatly expected especially in the chemical and petrochemical industries.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2004.05b
• /
• pp.655-657
• /
• 2004

채널 레벨 컨트롤러는 DWDM(Dense Wavelength Division Multiplexing) 방식의 OXC(Optical Cross Connect), OADM(Optical Add/Drop Multiplexer), 광 증폭기(EDFA : Erbium Doped Fiber Amplifier) 둥의 시스템에서 채널별 광신호의 세기를 조절하여 시스템의 신뢰성을 높이는 중요한 제어기다. 본 논문에서는 12채널 VOA(Variable Optical Attenuator) 4개를 사용하여 40채널의 광 신호 레벨을 제어할 수 있는 컨트롤러를 구현하였다. 각 채널의 광 신호 레벨을 제어하는데 하나의 마이크로 프로세서가 5개의 채널을 제어하고 총 8개의 마이크로프로세서로 40채널을 분산 제어하도록 구성하였다. 또한 외부와 통신을 하고 사용자로부터의 명령을 각각의 마이크로프로세서에 전달하기 위한 마이크로프로세서를 추가하였으며, 출력되는 광 신호의 세기를 측정하여 VOA를 제어하는데 있어서 VOA 출력에서 바로 PD(Photo Detector)로 입력하여 AWC(Arrayed Waveguide Grating) 출력에서 광 신호를 다시 분파하여 PD에 입력하는 번거로움을 개선하였다.

• Journal of the Korean Society of Mechanical Technology
• /
• v.13 no.4
• /
• pp.93-99
• /
• 2011

This paper presents a new type of optical silicon accelerometer using deep reactive ion etching (DRIE) and micro-stereolithography technology. Optical silicon accelerometer is based on a mass suspended by four vertical beams. A vertical shutter at the end of the mass can only moves along the sensing axis in the optical path between two single-mode optical fibers. The shutter modulates intensity of light from a laser diode reaching a photo detector. With the DRIE technique for (100) silicon, it is possible to etch a vertical shutter and beam. This ensures low sensitivity to accelerations that are not along the sensing axis. The microstructure for sensor packaging and optical fiber fixing was fabricated using micro stereolithography technology. Designed sensors are two types and each resonant frequency is about 15 kHz and 5 kHz.

• Proceedings of the PSK Conference
• /
• 2003.10b
• /
• pp.67.3-68
• /
• 2003

The purpose of this study is to improve repeatability of a non-invasive blood glucose measurement. The portable NIR system that was newly integrated by our lab includes a tungsten halogen lamp, a specialized reflectance fiber optic probe and a photo diode array type InGaAs detector, which was developed by a microchip technology based on the lithography. Reflectance NIR spectra of finger tip were recorded by using a fiber optic probe. The probe was fixed in the system and subjects put their finger on the probe head. (omitted)

• Nuclear Engineering and Technology
• /
• v.56 no.7
• /
• pp.2557-2562
• /
• 2024

A type of integrated multiple-single-channel analyzer (IMSCA) is described. The IMSCA works with an input pulse of 2-20 pC, and it can be directly connected to a scintillation detector, which eliminates the need for a linear amplifier. It consists of 64 input ports, so 1-64 detectors can be set by users according to different requirements. Two energy regions for each input channel can be simultaneously analyzed. Another advantage of the IMSCA is that it integrates with a high-speed pulse signal acquisition card and transmits data to the computer through the network. The maximum pulse through-rate is 1.4 MHz, and linearity can reach 0.1%. This IMSCA has been successfully used in enrichment detecting of nuclear fuel rod.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.38 no.10
• /
• pp.671-677
• /
• 2001

A RuO$_2$ Schottky photo-detector was designed and fabricated with GaN layers on the sapphire substrate. For good absorption of UV light, an epitaxial structure with undoped GaN(0.5 ${\mu}{\textrm}{m}$)/n￣-GaN(0.1${\mu}{\textrm}{m}$)/n＋-GaN(1.5${\mu}{\textrm}{m}$) was grown by MOCVD. The structure had the carrier concentrations of 3.8$\times$10$^{18}$ cm￣$^3$, the mobility of 283$\textrm{cm}^2$/V.s. After ECR etching process for mesa structure with the diameter of about 500${\mu}{\textrm}{m}$, Al ohmic contact was formed on GaN layer. After proper passivation between the contacts with Si$_3$/N$_4$, was formed on undoped GaN layer. The fabricated Schottky diode had a specific contact resistance of 1.15$\times$10$^{-5}$ ［$\Omega$.$\textrm{cm}^2$］. It has a low leakage current of 305 pA at -5 V, which was attributed by stable characteristics of RuO$_2$ Schottky contact. In optical measurement, it showed the high UV to visible extinction ratio of 10$^{5}$ and very high responsivity of 0.23 A/W at the wavelength of 365nm.