• Journal of the Korean Society of Radiology
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• v.15 no.4
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• pp.525-531
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• 2021

The detector of the positron emission tomography (PET) is composed using a plurality of scintillation pixels and photo sensors. The use of multiple photo sensors increases cost and complicates signal processing. In this study, a detector with reduced cost and simple signal processing was designed using a small number of photo sensors. A scintillation pixel and a small number of photo sensors were used, and a optical guide was used to deliver light to all the photo sensors. A reflector is applied to the scintillation pixel and the optical guide to transmit the maximum amount of light to the photo sensor. A diffuse reflector and a specular reflector were used for the reflector, and a flood image was obtained by applying different thicknesses of the optical guide. An optimal combination was selected through comparative analysis of the acquired flood images. As a result, when specular reflectors were used for both the scintillation pixel and the optical guide, excellent flood images were obtained from optical guides of all thicknesses. For the optical guide, the optimal image was obtained when using a 3 mm thickness in consideration of the size of the image and the analysis of the point where the image of the scintillation pixel was formed.

• The Journal of the Korea institute of electronic communication sciences
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• v.7 no.3
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• pp.579-583
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• 2012

We have designed the small particle detection system. The scatteing effect of light was used to detect small particle. The fabricated system consisted of laser diode, lens, pin hole, and photo detector. The aperture, lens, and photo detector were optimized to improve the performance of detection system. The fabricated detection system detected the scattered light by small particle entering into detection system and its response time was fast.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.7
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• pp.583-590
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• 2002

In this paper, a new Silicon on Insulator (SOI)-based photodetector was proposed, and its basic operation principle was explained. Fabrication steps of the detector are compatible with those of conventional SOI CMOS technology. With the proposed structure, RGB (Read, Green, Blue) which are three primary colors of light can be realized without using any organic color filters. It was shown that the characteristics of the SOI-based detector are better than those of bulk-based detector. To see the response characteristics to the green (G) among RGB, SOI and bulk NMOSFETS were fabricated using $1.5\mu m$ CMOS technology and characterized. We obtained optimum optical response characteristics at $V_{GS}=0.35 V$ in NMOSFET with threshold voltage of 0.72 V. Drain bias should be less than about 1.5 V to avoid any problem from floating body effect, since the body of the SOI NMOSFET was floated. The SOI and the bulk NMOSFETS shown maximum drain currents at the wavelengths of incident light around 550 nm and 750 nm, respectively. Therefore the SOI detector is more suitable for the G color detector.

• Journal of Radiation Protection and Research
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• v.43 no.4
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• pp.131-136
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• 2018

Background: We investigated the current characteristics of a thin-film Ag electrode on a chemical vapor deposition (CVD) diamond. The CVD diamond is widely recognized as a radiation detection material because of its high tolerance against high radiation, stable response to various dose rates, and good sensitivity. Additionally, thin-film Ag has been widely used as an electrode with high electrical conductivity. Materials and Methods: Considering these properties, the thin-film Ag electrode was deposited onto CVD diamonds with varied deposition thicknesses (${\fallingdotseq}50/98/152/257nm$); subsequently, the surface thickness, surface roughness, leakage current, and photo-current were characterized. Results and Discussion: The leakage current was found to be very low, and the photo-current output signal was observed as stable for a deposited film thickness of 98 nm; at this thickness, a uniform and constant surface roughness of the deposited thin-film Ag electrode were obtained. Conclusion: We found that a CVD diamond radiation detector with a thin-film Ag electrode deposition thickness close to 100 nm exhibited minimal leakage current and yielded a highly stable output signal.

• Journal of the Korean Society for Precision Engineering
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• v.12 no.7
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• pp.46-52
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• 1995

This paper proposes methodologies for the development of radiation thermometer using InSb photo-detector of which spectral sensitivity is excellent over the wave length range of 2 .mu. m .approx. 5 .mu. m. The proposed radiation thermometer has broad measurement range from normal to high, up to more than 1000 .deg. C, with high accuracy, and can measure temperature on the material surface or heat emission noncontactely with high speed. Optical system was consisted of two convex lens with foruslength of 15.2mm for infrared lay focusing, Ge filter to cut the short wave length components and sapphire filter to cut the long wave length components. The cold shielded was installed in the whole surface of the light-absorbing element to remove the error- mometer, calibration using black body furnace which has temperature range of 90 .deg. C .approx. 1100 .deg. C was carried out, and temperature calaibration curve was obtained by exponential function curvefitting. The result shows maximum error less than 0.24%(640K .+-. 1.6K) over the measurement range of 90 .deg. C .approx. 700 .deg. C, and from this result the usefulness of the developed thermometer has been confirmed.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.49-52
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• 2003

Two types of ozone monitors using UV absorption method were tried in consideration of cost of the monitor and precision in measuring. The high concentration ozone monitor for high concentration real time ozone monitoring from ozone generator was composed of a low pressure mercury lamp as UV source, a photo multiplier tube as UV detector and signal processing unit for the most part. This structure could be very useful for low price high concentration ozone monitor due to simple system structure and fairly good monitoring characteristics. The developed system showed good linear output characteristics to ozone in the measuring concentration range of 0.05 and 2 wt.%. For accuracy ambient ozone monitoring in ambient in ppm level, the system composed of a high power pulsed xenon lamp as UV source, an optical spectrometer with a high sensitivity linear CCD array as UV detector and signal processing unit in brief speaking was proposed our study for the first time in the world. The developed system showed good linearity and sensitivity in relative low measuring range between 10ppm and 10,000ppm, and showed some feasibility of high resolution ozone monitor using CCD array as photodetector.

• Fire Science and Engineering
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• v.24 no.1
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• pp.46-53
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• 2010

This is a case report of a photo-electric single station alarm for residential fire prevention. The detector was developed for the certification in Japanese market which is more than 100 times bigger than Korean market. A comparison and review for test standard owned by KFI (Korea Institute of Fire Industry & Technology) and JFEII (Japan Fire Equipment Inspection Institute) respectively is also conducted. The detector alarms with a buzzer and an indicating LED. Operating period and time in alarm, low battery and fire situation is stated. The electronics circuit part to reduce its current and the detector's characteristics are described. It is explained that the measured current and experimental result of the battery discharge can meet the 10 years operation.

• Journal of Sensor Science and Technology
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• v.14 no.4
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• pp.272-277
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• 2005

A CMOS active pixel sensor has been designed and fabricated using standard 2-poly and 4-metal $0.35{\mu}m$ CMOS processing technology. The CMOS active pixel sensor has been made up of a unit pixel having a highly sensitive PMOSFET photo-detector and electronic shutters that can control the light exposure time to the PMOSFET photo-detector, correlated-double sampling (CDS) circuits, and an 8-bit two-step flash analog to digital converter (ADC) for digital output. This sensor can obtain a stable photo signal in a wide range of light intensity. It can be realized with a special function of an electronic shutter which controls the light exposure-time in the pixel. Moreover, this sensor had obtained the digital output using an embedded ADC for the system integration. The designed and fabricated image sensor has been implemented as a $128{\times}128$ pixel array. The area of the unit pixel is $7.60{\mu}m{\times}7.85{\mu}m$ and its fill factor is about 35 %.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.798-801
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• 2001

we have investigated a characteristic of a vibration displacement detector, which was made with a photocoupler. Output signals of the detector were dominant at 700Hz of the frequency of vibrator, and It was maximum, when the amplitude of input signal had been at 1.1V. The detector will be used in measuring the surface roughness of substrates.

• Nuclear Engineering and Technology
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• v.54 no.11
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• pp.4215-4219
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• 2022

The Cd_0.95Mn_0.05Te_0.98Se_0.02 (CMTS) ingot was grown by the vertical Bridgman technique at low pressure. All wafers showed high resistivity, which suggests potential as a room-temperature semiconductor detector. The resistivity of the CMTS planar detector was 1.47 × 10¹⁰ Ω·cm and mobility lifetime product of electrons was 1.29 × 10^-3 cm²/V. The spectroscopic property with Am-241 and Co-57 was evaluated. The energy resolution about 59.5 keV gamma-ray of Am-241 was 11% and the photo-peak of 122 keV gamma-ray from Co-57 was clearly distinguished. The result shows the first detector-grade CMTS in the world and proves CMTS's potential as a radiation detector operating at room temperature.