• 제목/요약/키워드: photo region

검색결과 166건 처리시간 0.029초

Quantum Chemical Designing of Novel Organic Non-Linear Optical Compounds

  • Mahmood, Asif;Abdullah, Muhammad Imran;Nazar, Muhammad Faizan
    • Bulletin of the Korean Chemical Society
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    • 제35권5호
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    • pp.1391-1396
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    • 2014
  • In the present study, ten metal free non-linear optical (NLO) compounds have been designed. These compounds have designed by structural modification of (2-cyano-5-(4-(phenyl(4-vinylphenyl)amino)phenyl) penta-2,4-dienoic acid (TC4). Density functional theory was used for structure optimization and determination of photo-physical properties. These compounds contain triphenylamine as electron-donor and cyanoacrylic acid as acceptor. Five ${\pi}$-spacers are used to connect the donor and acceptor. Two auxiliary donors are also used to assist the donor. Results of this study indicate that stronger electron-donating auxiliary groups and longer ${\pi}$-conjugation enhance NLO response. Major absorption peaks of all systems were in the visible region. These absorption peaks are associated with the ${\pi}-{\pi}^*$ transitions of the entire molecule. From calculations it is clear that all system will be good NLO material. The present calculations will provide new ways for experimentalists to synthesize high-performance NLO material.

Green Light-emitting diode using a germyl-substituted PPV derivative

  • Hwang, Do-Hoon;Lee, Jeong-Ik;Cho, Nam-Sung;Shim, Hong-Ku
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.582-584
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    • 2004
  • The light-emitting properties of poly(2-triethylgermyl-1,4-phenylenevinylene) (TEG-PPV) are compared with those of the silyl-substituted PPV homologue, poly(2-trimethylsilyl-1,4phenylenevinylene) (TMS-PPV). The precursor polymer is solution-processable. After carrying out thermal elimination on the precursor polymer film, the resulting fully conjugated polymer film was found to exhibit high thermal stability in air, and absorption that is shifted to the longer wavelength region owing to the extension of the n-conjugated system. TEG-PPV exhibits efficient green light emission; the maximum PL emission of a TEG-PPV thin film was found to be at 515 nm. The HOMO and LUMO energy levels were also determined using photo-emission spectroscopy. The performance of the TEG-PPV EL device was found to be comparable to that of the TMS-PPV device.

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디지탈 X선 촬영술의 기술 발전과 전망

  • 민병구
    • 전기의세계
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    • 제34권9호
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    • pp.548-552
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    • 1985
  • 서울대학교 병원에서는 약2년간의 이분야에 대한 기초 및 임상연구 결과를 토대로 하여 D.S.R.System을 개발하고 있다. 현재 개발하고 있는 Systme은 다음과 같다. 1) X선 발생장치 및 Control부분 2) 산란효과 제거를 위한 fore-slit 및 after-slit과 구동장치 3) X선을 광신호로 변환하기 위한 rare earth screen과 광신호를 전기적인 신호로 변환시키기 위한 photo-diode array detector의 결합체, 4) data 수집부분, 증폭장치와 A/D변환기, 고속 data 저장용 기억장치 부분 5) data 처리와 display를 위한 Bit-slice processor 5) Picture Archiving and Communication Systems (PACS) 이러한 부분 이외에 SNR을 향상시키고 좁은 부위의 region of interest를 보다 정확하게 관찰하기 위해서 511p/mm의 고밀도 선형검출기를 병행으로 사용하고 있다. 이 선형검출기를 이용하여 일부의 영상을 관찰하여 그 결과를 Wiener filter 등의 방법의 매개변수 선정에 이용하여 전체적인 영상의 질을 향상시키고자 하는 것이다.

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견의 결정성에 관한 연구(II) -견 피브로인의 산 처리에 의한 결정화와 황변억제효과에 대하여- (A Study on the Crystallinity in Silk Fibers(II) -Crystallization in Silk Fibroin by Acid Treatment and Its Photoyellowing Reduction Effect-)

  • 장정대;최석철
    • 한국염색가공학회지
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    • 제6권2호
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    • pp.24-29
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    • 1994
  • In order to investigate the crystallization in silk fibroin induced by acid treatment and its photo-yellowing reduction effect. silk fibroin were immersed in PH 3.5~4.0 sulfuric acid and 0.01N hydro-chloric acid at 2$0^{\circ}C$, and the changes of crystallinity were measured by infrared spectroscopy, X-ray diffraction. Yellowness index caused by UV irradiation were also observed. The results are as follows : 1. ${\beta}$-form transition occurs when the silk fibroin are immersed at 2$0^{\circ}C$ in pH 3.5~4.0 sulfuric acid and 0.01N hydro-chloric acid. Formation of new hydrogenbond in molecules on the amorphous region induced ${\beta}$-form structure, and increased crystallinity. 2. Crystallization owing to $\beta$-form transition reduced the initial yellowness index by ultraviolet irradiation.

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AUTOMATIC ROAD NETWORK EXTRACTION. USING LIDAR RANGE AND INTENSITY DATA

  • Kim, Moon-Gie;Cho, Woo-Sug
    • 대한원격탐사학회:학술대회논문집
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    • 대한원격탐사학회 2005년도 Proceedings of ISRS 2005
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    • pp.79-82
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    • 2005
  • Recently the necessity of road data is still being increased in industrial society, so there are many repairing and new constructions of roads at many areas. According to the development of government, city and region, the update and acquisition of road data for GIS (Geographical Information System) is very necessary. In this study, the fusion method with range data(3D Ground Coordinate System Data) and Intensity data in stand alone LiDAR data is used for road extraction and then digital image processing method is applicable. Up to date Intensity data of LiDAR is being studied. This study shows the possibility method for road extraction using Intensity data. Intensity and Range data are acquired at the same time. Therefore LiDAR does not have problems of multi-sensor data fusion method. Also the advantage of intensity data is already geocoded, same scale of real world and can make ortho-photo. Lastly, analysis of quantitative and quality is showed with extracted road image which compare with I: 1,000 digital map.

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전자 공명을 이용한 저온 플라즈마 식각에 관한 연구 (A Study on the Law Temperature Plasma Etching using Electron Cyclotron Resonance)

  • 이석현;김재성;황기웅;김원규
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1992년도 하계학술대회 논문집 B
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    • pp.850-853
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    • 1992
  • A cryogenic electron cyclotron resonance plasma etching system has been built to study wafer-temperature in the silicon etching characteristics. The wafer temperature was controlled from -150 to +30 $^{\circ}C$ during etching using the liquid nitrogen cooled helium gas. Although silicon was etched isotropically in $SF_6$ plasma at room temperatures, we found that it is possible to suppress the etch undercut in Si by reducing a substrate temperature without side wall passivation. In addition, the selectivity of silicon to photoresist was improved considerably at a low wafer temperature. Etch rates, anisotropy and selectivity to photo resist are measured as a function of the wafer temperature in the region of -125 $\sim$ 25$^{\circ}C$ and rf bias power of 20W $\sim$ 80W.

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Photo-Leakage Currents in Organic Thin-Film Transistor

  • Cho, Sang-Mi;Han, Seung-Hoon;Kim, Jun-Hee;Lee, Sun-Hee;Choo, Dong-June;Uchiike, H.;Oh, Myung-Hwan;Jang, Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.1386-1389
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    • 2005
  • We report the light illumination effect on the performance of pentacene organic thin-film transistor (OTFT). The TFT performance with and without illumination were measured at various temperatures. The off-state currents increase linearly with light intensity in the region of gate voltage where the holes are majority carriers in the TFT channel. The minimum photocurrents of OTFT increase with increasing light intensity.

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Static I-V Characteristics of Optically Controlled GaAs MESFET's with Emphasis on Substrate-induced Effects

  • Murty, Neti V.L. Narasimha;Jit, S.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제6권3호
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    • pp.210-224
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    • 2006
  • A new analytical model for the static I-V characteristics of GaAs MESFET’s under optically controlled conditions in both linear and saturation region is presented in this paper. The novelty of the model lies in characterizing both photovoltaic (external, internal) and photoconductive effects. Deep level traps in the semi insulating GaAs substrate are also included in this model. Finally, effect of backgate voltage on I-V characteristics is explained analytically for the first time in literature. Small signal parameters of GaAs MESFET are derived under both dark and illuminated conditions. Some of the results are compared with reported experimental results to show the validity of the proposed model. Since accurate dc modeling is the key to accurate ac modeling, this model is very useful in the designing of photonic MMIC’s and OEIC’s using GaAs MESFET.

호용성이 있는 광결합 부성저항회로의 설계 (A Versatile Design of Optronic Negative Resistance)

  • 박성한
    • 대한전자공학회논문지
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    • 제15권4호
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    • pp.33-37
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    • 1978
  • 전압제어형이나 전류제어형부성저항으로 사용될 수 있는 호용성이 있는 광결합부성저항회로가 설계되었다. 이 호용성은 트런지스터의 교환 및 회로내의 한 접속점을 변경시킴으로 이루어진다. 이러한 부성저항회로의 부성저항특성은 매우 선형적이며 부성저항값 및 I-V특성은 수동소자값의 변화로 넓은 범위에 걸쳐 변화된다.

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광학 선형 패터네이터를 이용한 고압 환경 하에서의 분무 측정 (Spray Measurement Using Optical Line Patternator at High Ambient Pressure)

  • 고현석;신상희;윤영빈
    • 한국가시화정보학회지
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    • 제3권1호
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    • pp.63-70
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    • 2005
  • Optical Line Patternator(OLP) has been applied to get a distribution of the spray at high ambient pressure. OLP is a combined technique of extinction measurement and image processing. The attenuated intensity of laser beam after traversing spray region was measured by using a photo-detector, and the line image of Mie-scattering was captured simultaneously in the path of each laser beam by using a CCD camera. The distribution of extinction coefficient in the spray is obtained by processing these data with the algebraic reconstruction technique. From the distribution of extinction coefficient, the surface distribution of spray can be reconstructed. OLP does not use laser sheet but use laser beam so that the noise effect of multiple scattering, caused by increasing number density of droplet in high pressure environment, is reduced drastically. OLP is expected as a suitable method which can investigate the characteristics of relatively large spray under the high pressure environment such as liquid rocket engine.

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