• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.8
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• pp.646-651
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• 1998

In this present study, the luminescence characteristics and mechanism of energy $CaTiO_3$:Pr phosphor were studied using disk specimens sintered at various temperatures and envirenment. A single-phase $CaTiO_3$:Pr was synthesized by sintering above 140$0^{\circ}C$ and its crystal structure was found to be perovskite orthorhombic. A dominant peak around 360 nm and a broad peak around 395 nm were observed in the PLE(Photoluminescence Excitation) spectrum of $CaTiO_3$:Pr with fixed emission wavelength at 612 nm, the decay time of 360 nm excitation was found to be longer than that of 395 nm excitation. From this result, it is assumed that the free carrier excited to 360 nm is transferred to 395 nm energy level. Therefore, the decrease in 395 nm intensity observed in CaTiO$_3$:Pr specimens sintered in Ar gas environment induced shorter decay time and improved CL luminescence.

• Transactions on Electrical and Electronic Materials
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• v.8 no.4
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• pp.166-169
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• 2007

In applying LCD to TV application, one of the most significant factors to be improved is image sticking on the moving picture. LCD is different from CRT in the sense that it's continuous passive device, which holds images in entire frame period, while impulse type device generate image in very short time. To reduce image sticking problem related to hold type display mode, we made an experiment to drive TN-LCD like CRT. We made articulate images by turn on-off backlight, and we realized the ratio of Back Light on-off time by counting between on time and off time for video signal input during 1 frame (16.7 ms). Conventional CCFL (cold cathode fluorescent lamp) cannot follow fast on-off speed, so we evaluated new fluorescent substances of light source to improve residual light characteristic of CCFL. We realized articulate image generation similar to CRT by CCFL blinking drive and TN-LCD overdriving. As a result, reduced image sticking phenomenon was validated by naked eye and response time measurement.

• Ceramist
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• v.22 no.3
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• pp.281-300
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• 2019

Surface enhanced Raman scattering (SERS) was first discovered in 1974 by an unexpected Raman signal increase from Pyridine adsorbed on rough Ag electrode surfaces by the M. Fleishmann group. M. Moskovits group suggested that this phenomenon could be caused by surface plasmon resonance (SPR), which is a collective oscillation of free electrons at the surface of metal nanostructures by an external light source. After about 40 years, the SERS study has attracted great attention as a biomolecule analysis technology, and more than 2500 new papers and 500 review papers related to SERS topic have been published each year in recently. The advantages of biomaterials analysis using SERS are as follows; ① Molecular level analysis is possible based on unique fingerprint information of biomolecule, ② There is no photo-bleaching effect of the Raman reporters, allowing long-term monitoring of biomaterials compared to fluorescence microscopy, ③ SERS peak bandwidth is approximately 10 to 100 times narrower than fluorescence emission from organic phosphor or quantum dot, resulting in higher analysis accuracy, ④ Single excitation wavelength allows analysis of various biomaterials, ⑤ By utilizing near-infrared (NIR) SERS-activated nanostructures and NIR excitation lasers, auto-fluorescence noise in the visible wavelength range can be avoided from in vivo experiment and light damage in living cells can be minimized compared to visible lasers, ⑥ The weak Raman signal of the water molecule makes it easy to analyze biomaterials in aqueous solutions. For this reason, SERS is attracting attention as a next-generation non-invasive medical diagnostic device as well as substance analysis. In this review, the principles of SERS and various biomaterial analysis principles using SERS analysis will be introduced through recent research papers.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.37 no.6
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• pp.9-16
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• 2000

The perception of flicker on the computer display devices depends upon the temporal waveform of the phosphor decay characteristic, the frame rate, and the display size. The lowest frequency at which flicker is not perceived is called the critical fusion frequency or critical frequency. Critical fusion frequency is evaluated by the display illuminance and the modulation (m) defined as the ratio of the amplitude of first harmonic frequency to the DC of the waveform. In this paper, we analyze the relationship bet ween the critical fusion frequency, relating to the decay characteristic of the phosphors and luminance on the monitor, and the frame frequency. Also under considering the viewing angle, we presented the frame frequency that is less sensitive to the full size of the display device.

• Journal of Advanced Marine Engineering and Technology
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• v.39 no.4
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• pp.473-477
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• 2015

In this paper, a commercial phosphorescent white light-emitting diode (WLED) visible light communication (VLC) system with an equalization circuit to achieve the high modulation bandwidth was designed and demonstrated. An analytical method to examine the performance of the equalizer was carried out using a general circuit-simulator, PSpice. The equalization circuit was composed of two passive filters with resisters and a capacitor and an active filter with an op-amp. Utilizing our post-equalization technology, the ~3.5 MHz bandwidth of phosphor WLED could be extended to ~25 MHz without using an optical blue-filter. In this VLC system with a single round-type WLED and a single PIN photo-diode, ASK data transmission up to 35 Mbps at a 1m free space distance was obtained. The resulting bit-error-rate was $7.6{\times}10^{-4}$, which is less than the forward error correction (FEC) limit of $3.8{\times}10^{-3}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.174-175
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• 2012

(In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.184-184
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• 2012

Recently, InGaN/GaN multi-quantum well grown on GaN pyramid structures have attracted much attention due to their hybrid characteristics of quantum well, quantum wire, and quantum dot. This gives us broad band emission which will be useful for phosphor-free white light emitting diode. On the other hand, by using quantum dot emission on top of the pyramid, site selective single photon source could be realized. However, these structures still have several limitations for the single photon source. For instance, the quantum efficiency of quantum dot emission should be improved further. As detection systems have limited numerical aperture, collection efficiency is also important issue. It has been known that micro-cavities can be utilized to modify the radiative decay rate and to control the radiation pattern of quantum dot. Researchers have also been interested in nano-cavities using localized surface plasmon. Although the plasmonic cavities have small quality factor due to high loss of metal, it could have small mode volume because plasmonic wavelength is much smaller than the wavelength in the dielectric cavities. In this work, we used localized surface plasmon to improve efficiency of InGaN qunatum dot as a single photon emitter. We could easily get the localized surface plasmon mode after deposit the metal thin film because lnGaN/GaN multi quantum well has the pyramidal geometry. With numerical simulation (i.e., Finite Difference Time Domain method), we observed highly enhanced decay rate and modified radiation pattern. To confirm these localized surface plasmon effect experimentally, we deposited metal thin films on InGaN/GaN pyramid structures using e-beam deposition. Then, photoluminescence and time-resolved photoluminescence were carried out to measure the improvement of radiative decay rate (Purcell factor). By carrying out cathodoluminescence (CL) experiments, spatial-resolved CL images could also be obtained. As we mentioned before, collection efficiency is also important issue to make an efficient single photon emitter. To confirm the radiation pattern of quantum dot, Fourier optics system was used to capture the angular property of emission. We believe that highly focused localized surface plasmon around site-selective InGaN quantum dot could be a feasible single photon emitter.