• Journal of information and communication convergence engineering
• /
• v.13 no.4
• /
• pp.280-285
• /
• 2015

Double random phase encryption (DRPE) is one of the well-known optical encryption techniques, and many techniques with DRPE have been developed for information security. However, most of these techniques may not solve the fundamental security problem caused by using fixed phase masks for DRPE. Therefore, in this paper, we propose a key phase mask updating scheme for DRPE to improve its security, where a spatial light modulator (SLM) is used to implement key phase mask updating. In the proposed scheme, updated key data are obtained by using previous image data and the first phase mask used in encryption. The SLM with the updated key is used as the second phase mask for encryption. We provide a detailed description of the method of encryption and decryption for a DRPE system using the proposed key updating scheme, and simulation results are also shown to verify that the proposed key updating scheme can enhance the security of the original DRPE.

• Proceedings of the Optical Society of Korea Conference
• /
• 2001.02a
• /
• pp.194-195
• /
• 2001

We fabricated fiber bragg gratings using interferometric method with Phase mask. The interferometer consisted of two plane-parallel mirrors and a phase mask perpendicular to mirrors. The Gratings were written using an Argon-ion laser. The experimental setup could change Bragg wavelength given by the phase mask. (omitted)

• Current Optics and Photonics
• /
• v.3 no.5
• /
• pp.401-407
• /
• 2019

Polymeric optical waveguide devices with Bragg gratings have been investigated, for implementing tunable lasers and wavelength filters used in wavelength-division-multiplexed optical communication systems. Owing to the excellent thermo-optic effect of these polymers, wavelength tuning is possible over a wide range, which is difficult to achieve using other optical materials. In this study the phase-mask technology, which has advantages over the conventional interferometeric method, was introduced to facilitate the fabrication of Bragg gratings in polymeric optical waveguide devices. An optical setup capable of fabricating multiple Bragg gratings simultaneously on a 4-inch silicon wafer was constructed, using a 442-nm laser and phase mask. During fabrication, some of the diffracted light in the phase mask was totally reflected inside the mask, which affected the quality of the Bragg grating adversely, so experiments were conducted to solve this issue. To verify grating uniformity, two types of wavelength-filtering devices were fabricated using the phase-mask lithography, and their reflection and transmission spectra were measured. From the results, we confirmed that the phase-mask method provides good uniformity, and may be applied for mass production of polymer Bragg-grating waveguide devices.

• Journal of Korea Multimedia Society
• /
• v.19 no.6
• /
• pp.1043-1051
• /
• 2016

In this paper, double encryption technique of binary image using random phase mask and 2-step phase-shifting digital holography is proposed. After phase modulating of binary image, firstly, random phase mask to be used as key image is generated through the XOR operation with the binary phase image. And the first encrypted image is encrypted again through the fresnel transform and 2-step phase-shifting digital holography. In the decryption, simple arithmetic operation and inverse Fresnel transform are used to get the first decryption image, and second decryption image is generated through XOR operation between first decryption image and key image. Finally, the original binary image is recovered through phase modulation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.11
• /
• pp.901-907
• /
• 2000

As the minimum feature size for making ULSI approaches the wavelength of light source in optical lithography, the aerial image is so hardly distorted because of the optical proximity effect that the accurate mask image reconstruction on wafer surface is almost impossible. We applied the Optical Proximity Correction(OPC) on isolated patterns assuming Attenuated Phase Shift Mask(APSM) as well as binary mask, to correct the widening of isolated patterns. In this study, we found that applying OPC to APSM shows much better improvement not only in enhancing the resolution and fidelity of t도 images but also in enhancing the process margin than applying OPC to the binary mask. Also, we propose the OPC method of APSM for isolated patterns, the size of which is less than the wavelength of the ArF excimer laser. Finally, we predicted the resolution limit of optical lithography through the aerial image simulation.

• 전자공학회논문지 IE
• /
• v.48 no.2
• /
• pp.1-5
• /
• 2011

The epitaxial GaN layer of $120{\mu}m$ ~ $300{\mu}m$ thickness with a stripe Ti mask pattern is performed by hydride vapor phase epitaxy(HVPE). Ti strpie mask pattern is deposited by DC magnetron sputter on GaN epitaxial layer of $3{\mu}m$ thickness is grown by hydride vapor phase epitaxy(HVPE). Void are observed at point of Ti mask pattern when GaN layer is investigated by scanning electron microscope. The Crack of GaN layer is observed according to void when it is grown more thick GaN layer. The full width at half maximum of peak which is measured by X-ray diffraction is about 188 arcsec. It is not affected its crystallization by Ti meterial when GaN layer is overgrown on Ti stripe mask pattern according as it is measure FWHM of overgrowth GaN using Ti material against FWHM of first growth GaN epitaxial layer.

• Korean Journal of Optics and Photonics
• /
• v.18 no.5
• /
• pp.303-308
• /
• 2007

We report here on the application of a digital holographic microscope as a metrology tool for the inspection and the micro-topography reconstruction of different micro-structures of phase shift photo-mask (PSM). The lithography by phase shift photo-mask uses the interference and the pattern of the PSM is not imaged by general optical microscope. The technique allows us to obtain digitally a high-fidelity surface topography description of the phase shift photo-mask with only one hologram image acquisition, allowing us to have relatively simple and compact set-ups able to give quantitative information of PSM.

• Journal of the Semiconductor & Display Technology
• /
• v.15 no.2
• /
• pp.32-37
• /
• 2016

Sidewall angle (SWA) of an absorber stack in extreme ultraviolet lithography mask is considered to be $90^{\circ}$ ideally, however, it is difficult to obtain $90^{\circ}$ SWA because absorber profile is changed by complicated etching process. As the imaging performance of the mask can be varied with this SWA of the absorber stack, more complicated optical proximity correction is required to compensate for the variation of imaging performance. In this study, phase shift mask (PSM) is suggested to reduce the variation of imaging performance due to SWA change by modifying mask material and structure. Variations of imaging performance and lithography process margin depending on SWA were evaluated through aerial image and developed resist simulations to confirm the advantages of PSM over the binary intensity mask (BIM). The results show that the variations of normalized image log slope and critical dimension bias depending on SWA are reduced with PSM compared to BIM. Process margin for exposure dose and focus was also improved with PSM.

• Proceedings of the Optical Society of Korea Conference
• /
• 2001.02a
• /
• pp.62-63
• /
• 2001

We studied a method to use a variable discrete random phase mask in 2-D binary data representation for efficient holographic data storage. The variable phase mask is realized by use of a liquid crystal display.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2013.05a
• /
• pp.633-634
• /
• 2013