• Title/Summary/Keyword: phase compensated VGA

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Transceiver IC for CMOS 65nm 1-channel Beamformer of X/Ku band (X/Ku 대역 CMOS 65nm 단일 채널 빔포머 송수신기 IC )

  • Jaejin Kim;Yunghun Kim;Sanghun Lee;Byeong-Cheol Park;Seongjin Mun
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.24 no.4
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    • pp.43-47
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    • 2024
  • This paper introduces a phased-array single-channel transceiver beamformer IC built using 65nm CMOS technology, covering the 8-16 GHz range and targeting the X and Ku bands for radar and satellite communications. Each signal path in the IC features a low noise amplifier (LNA), power amplifier (PA), phase shifter (PS), and variable gain amplifier (VGA), which allow for phase and gain adjustments essential for beam steering and tapering control in typical beamforming systems. Test results show that the phase-compensated VGA offers a gain range of 15 dB with 0.25 dB increments and an RMS gain error of 0.27 dB. The active vector modulator phase shifter delivers a 360° phase range with 2.8125° steps and an RMS phase error of 3.5°.

A Dual-Mode 2.4-GHz CMOS Transceiver for High-Rate Bluetooth Systems

  • Hyun, Seok-Bong;Tak, Geum-Young;Kim, Sun-Hee;Kim, Byung-Jo;Ko, Jin-Ho;Park, Seong-Su
    • ETRI Journal
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    • v.26 no.3
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    • pp.229-240
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    • 2004
  • This paper reports on our development of a dual-mode transceiver for a CMOS high-rate Bluetooth system-onchip solution. The transceiver includes most of the radio building blocks such as an active complex filter, a Gaussian frequency shift keying (GFSK) demodulator, a variable gain amplifier (VGA), a dc offset cancellation circuit, a quadrature local oscillator (LO) generator, and an RF front-end. It is designed for both the normal-rate Bluetooth with an instantaneous bit rate of 1 Mb/s and the high-rate Bluetooth of up to 12 Mb/s. The receiver employs a dualconversion combined with a baseband dual-path architecture for resolving many problems such as flicker noise, dc offset, and power consumption of the dual-mode system. The transceiver requires none of the external image-rejection and intermediate frequency (IF) channel filters by using an LO of 1.6 GHz and the fifth order onchip filters. The chip is fabricated on a $6.5-mm^{2}$ die using a standard $0.25-{\mu}m$ CMOS technology. Experimental results show an in-band image-rejection ratio of 40 dB, an IIP3 of -5 dBm, and a sensitivity of -77 dBm for the Bluetooth mode when the losses from the external components are compensated. It consumes 42 mA in receive ${\pi}/4-diffrential$ quadrature phase-shift keying $({\pi}/4-DQPSK)$ mode of 8 Mb/s, 35 mA in receive GFSK mode of 1 Mb/s, and 32 mA in transmit mode from a 2.5-V supply. These results indicate that the architecture and circuits are adaptable to the implementation of a low-cost, multi-mode, high-speed wireless personal area network.

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