• Title/Summary/Keyword: phase change characteristics

검색결과 907건 처리시간 0.028초

판형 상변화 물질 용기의 2상 열교환 현상 연구 (A Study on Two Phase Heat Exchange of Plate Type PCM Container)

  • 김석현;조성우;이채수
    • 설비공학논문집
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    • 제8권4호
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    • pp.576-582
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    • 1996
  • This work studies qualitative thermal characteristics of PCM cold storage medium container and its surrounding streams. Experimental parameters are initial PCM temperature and cold water flow rate. A mathematical modeling was establised to estimate temperature distribution and the cooling process. We found that the phase-change temperatures of PCM varies from 6 to $8^{\circ}C$ which is constant for other materials and that the dominant heat transfer resistance is that on the container side taking about 3/4 of the total resistance. The one dimensional mathematical model predicts experimental data quit well.

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$Ge_2Sb_2Te_5$ 상변화 소자의 상부구조 변화에 따른 결정화 특성 연구 (A study on characteristics of crystallization according to changes of top structure with phase change memory cell of $Ge_2Sb_2Te_5$)

  • 이재민;신경;최혁;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.80-81
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    • 2005
  • Chalcogenide phase change memory has high performance to be next generation memory, because it is a nonvolatile memory processing high programming speed, low programming voltage, high sensing margin, low consumption and long cycle duration. We have developed a sample of PRAM with thermal protected layer. We have investigated the phase transition behaviors in function of process factor including thermal protect layer. As a result, we have observed that set voltage and duration of protect layer are more improved than no protect layer.

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에탄올에 의한 TMA-포접화합물의 냉각특성 개선에 대한 연구 (A Study on the Cooling Characteristics Improvement of TMA-Water Clathrate Compound by Ethanol)

  • 이종인;김창오
    • 한국자동차공학회논문집
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    • 제15권1호
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    • pp.23-28
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    • 2007
  • This study aims to find out cooling characteristics of TMA(Tri-Methyl-Amine, $(CH_3)_3N$) 25wt%-water clathrate compound with ethanol($CH_3CH_2OH$) such as supercooling, phase change temperature and specific heat. For this purpose, ethanol is added as per weight concentration and cooling experiment is performed at $-6{\sim}-8^{\circ}C$, cooling heat source temperature, and it leads the following result. (1) Phase change temperature is decreased due to freezing point depression phenomenon. Especially, it is minimized as $3.8^{\circ}C$ according to cooling source temperature in case that 0.5wt% of ethanol is added. (2) If 0.5wt% of ethanol is added, average supercooling degree is $0.9^{\circ}C$ and minimum supercooling is 0.8, $0.7^{\circ}C$ according to cooling heat source temperature. The restraint effect of supercooling is shown. (3) Specific heat shows tendency to decrease if ethanol is added. It is $3.013{\sim}3.048\;kcal/kg^{\circ}C$ according to cooling heat source temperature if 0.5wt% of ethanol is added. Phase change temperature higher than that of water and inhibitory effect against supercooling can be confirmed through experimental study on cooling characteristics of TMA 25wt%-water clathrate compound by adding additive, ethanol. This can lead to shorten refrigerator operation time of low temperature latent heat storage system and improve COP of refrigerator and efficiency of overall system. Therefore energy can be saved and efficiency can be improved much more.

Phase Change Memory와 Capacitor-Less DRAM을 사용한 Unified Dual-Gate Phase Change RAM (Unified Dual-Gate Phase Change RAM (PCRAM) with Phase Change Memory and Capacitor-Less DRAM)

  • 김주연
    • 한국전기전자재료학회논문지
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    • 제27권2호
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    • pp.76-80
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    • 2014
  • Dual-gate PCRAM which unify capacitor-less DRAM and NVM using a PCM instead of a typical SONOS flash memory is proposed as 1 transistor. $VO_2$ changes its phase between insulator and metal states by temperature and field. The front-gate and back-gate control NVM and DRAM, respectively. The feasibility of URAM is investigated through simulation using c-interpreter and finite element analysis. Threshold voltage of NVM is 0.5 V that is based on measured results from previous fabricated 1TPCM with $VO_2$. Current sensing margin of DRAM is 3 ${\mu}A$. PCM does not interfere with DRAM in the memory characteristics unlike SONOS NVM. This novel unified dual-gate PCRAM reported in this work has 1 transistor, a low RESET/SET voltage, a fast write/erase time and a small cell so that it could be suitable for future production of URAM.

보조권선 활용에 의한 SRM의 진동 및 소음 저감 방안 (Vibration and Acoustic Noise Reduction Method of SRM Using Auxiliary Winding)

  • 정태욱
    • 대한전기학회논문지:전기기기및에너지변환시스템부문B
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    • 제52권11호
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    • pp.548-556
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    • 2003
  • Switched reluctance motor(SRM) has simple magnetic structure, and needs simple power electronic driving circuit. It is very useful for wide range adjustable speed drive system. But, SRM drive generates large vibration and acoustic noise because it is commutated individually by step pulse m.m.f of each phase. In the vibration and acoustic noise characteristics. the considerable vibration and noise is induced by radial deforming of stator, so the frequency of dominant vibration and noise is coincident with the frequency of natural frequency of mechanical structure. This radial vibration force is generated by abrupt change of radial magnetic force in the phase commutation region. This paper studied about simple electromagnetic structure of SRM using auxiliary compensating winding for the reduction of noise and vibration. This auxiliary winding is coupled with all phase windings electromagnetically and absorb and transfer magnetic energy variation from phase to other phase. By this interaction of phase windings and compensating winding can reduce abrupt radial force change and vibration and acoustic noise. In this paper the improvement effect is examined by the test of prototype machine.

PRAM을 위한 $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ (x= 0, 0.05, 0.1) 박막의 특성 (Characteristics of $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ (x= 0, 0.05, 0.1) thin films for PRAM)

  • 김성원;송기호;이현용
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.21-22
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    • 2008
  • In the paper, we report several experimental data capable of evaluating the phase transformation characteristics of $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ (x =0, 0.05, 0.1) thin films. The $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ phase change thin films have been prepared by thermal evaporation. The crystallization characteristics of amorphous$Ag_x(Ge_2Sb_2Te_5)_{1-x}$ thin films were investigated by using nano-pulse scanner with 658 nm laser diode (power; 1~17 mW, pulse duration; 10~460 ns) and XRD measurement. It was found that the more Ag is doped, the more crystallization speed was 50 improved. In comparision with $Ge_2Sb_2Te_5$ thin film, the sheet resistance$(R_{amor})$ of the amorphous $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ thin films were found to be lager than that of $Ge_2Sb_2Te_5$ film($R_{amor}$ $\sim10^7\Omega/\square$ and $R_{cryst}$ 10 $\Omega/\square$). That is, the ratio of $R_{amor}/R_{cryst}$ was evaluates to be $\sim10^6$ This is very helpful to writing current reduction of phase-change random acess memory.

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비휘발성 상변화메모리소자에 응용을 위한 칼코게나이드 $Ge_1Se_1Te_2$ 박막의 특성 (The Characteristics of Chalcogenide $Ge_1Se_1Te_2$ Thin Film for Nonvolatile Phase Change Memory Device)

  • 이재민;정홍배
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제55권6호
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    • pp.297-301
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    • 2006
  • In the present work, we investigate the characteristics of new composition material, chalcogenide $Ge_1Se_1Te_2$ material in order to overcome the problems of conventional PRAM devices. The Tc of $Ge_1Se_1Te_2$ bulk was measured $231.503^{\circ}C$ with DSC analysis. For static DC test mode, at low voltage, two different resistances are observed. depending on the crystalline state of the phase-change resistor. In the first sweep, the as-deposited amorphous $Ge_1Se_1Te_2$ showed very high resistance. However when it reached the threshold voltage(about 11.8 V), the electrical resistance of device was drastically reduced through the formation of an electrically conducting path. The phase transition between the low conductive amorphous state and the high conductive crystal]me state was caused by the set and reset pulses respectively which fed through electrical signal. Set pulse has 4.3 V. 200 ns. then sample resistance is $80\sim100{\Omega}$. Reset pulse has 8.6 V 80 ns, then the sample resistance is $50{\sim}100K{\Omega}$. For such high resistance ratio of $R_{reset}/R_{set}$, we can expect high sensing margin reading the recorded data. We have confirmed that phase change properties of $Ge_1Se_1Te_2$ materials are closely related with the structure through the experiment of self-heating layers.

A Preconditioning Method for Two-Phase Flows with Cavitation

  • Shin B.R.;Yamamoto S.
    • 한국전산유체공학회:학술대회논문집
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    • 한국전산유체공학회 2003년도 The Fifth Asian Computational Fluid Dynamics Conference
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    • pp.181-182
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    • 2003
  • A preconditioned numerical method for gas-liquid to-phase flow is applied to solve cavitating flow. The present method employs a density based finite-difference method of dual time-stepping integration procedure and Roe's flux difference splitting approximation with MUSCL-TVD scheme. A homogeneous equilibrium cavitation model is used. The method permits simple treatment of the whole gas-liquid two-phase flow field including wave propagation, large density changes and incompressible flow characteristics at low Mach number. By this method, two-dimensional internal flows through a venturi tuve and decelerating cascades are computed and discussed.

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커뮤테이션 구간의 토크리플 저감을 위한 SRM의 토크 분배 함수 기법 (Torque Sharing Function of SRM for Torque Ripple Reduction in Commutation Region)

  • 김태형;;이동희;안진우
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2007년도 추계학술대회 논문집
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    • pp.148-150
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    • 2007
  • A novel torque sharing function (TSF) is presented. To improve efficiency and to reduce torque ripple in commutation region, only a phase torque under commutation is regulated to produce a uniform torque. And the torque developed by the other phase remains with the previous state under a current limit of the motor and drive. If the minimum change of a phase torque reference can not satisfy the total reference torque, two-phase changing mode is used. Since a phase torque is constant and the other phase torque is changed at each rotor position, total torque error can be reduced within a phase torque error limit. And the total torque error is dependent on the change of phase torque. To consider non-linear torque characteristics and to suppress a tail current at the end of commutation region, the incoming phase current is changed to torque increasing direction, but the outgoing phase current is changed to torque decreasing direction. So, the torque sharing of the outgoing phase and incoming phase can be smoothly changed with a minimum current cross over. The proposed control scheme is verified by some computer simulations and experimental results.

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토크분배함수를 이용한 SRM의 적접토크제어기법 (Direct Torque Control Scheme of Switched Reluctance Motor using Novel Torque Sharing Function)

  • 안진우;이동희;김태형
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 추계학술대회 논문집 전기기기 및 에너지변환시스템부문
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    • pp.138-140
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    • 2007
  • A novel non-linear logical torque sharing function (TSF) is presented. To improve efficiency and to reduce torque ripple in commutation region, only a phase torque under commutation is regulated to produce a uniform torque. And the torque developed by the other phase remains with the previous state under a current limit of the motor and drive. If the minimum change of a phase torque reference can not satisfy the total reference torque, two-phase changing mode is used. Since a phase torque is constant and the other phase torque is changed at each rotor position, total torque error can be reduced within a phase torque error limit. And the total torque error is dependent on the change of phase torque. To consider non-linear torque characteristics and to suppress a tail current at the end of commutation region, the incoming phase current is changed to torque increasing direction, but the outgoing phase current is changed to torque decreasing direction. So, the torque sharing of the outgoing phase and incoming phase can be smoothly changed with a minimum current cross over. The proposed control scheme is verified by some computer simulations and experimental results.

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