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INEQUALITIES FOR THE AREA OF CONSTANT RELATIVE BREADTH CURVES

  • Kim, Yong-Il;Chai, Y.D.
    • Bulletin of the Korean Mathematical Society
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    • v.36 no.1
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    • pp.15-23
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    • 1999
  • We obtain an efficient upper bound of the area of convex curves of constant relative breadth in the Minkowski plane. The estimation is given in terms of the Minkowski are length of pedal curve of original curve.

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Interfacial Energetics of All Oxide Transparent Photodiodes

  • Yadav, Pankaj;Kim, Hong-sik;Patel, Malkeshkumar;Kim, Joondong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.390.1-390.1
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    • 2016
  • The present work explains the interfacial energetics of all oxide transparent photodiodes. The optical, structural and morphological of copper oxides were systematically analyse by UV-Visible spectrometer, X-Ray diffraction, Raman spectroscopy, Scanning electron microscopy (SEM) and Atomic force microscopy measurements (AFM). The UV-Visible result exhibits optical bandgap of Cu2O and CuO as 2.2 and 2.05 eV respectively. SEM and AFM result shows a uniform grain size distribution in Cu2O and CuO thin films with the average grain size of 45 and 40 nm respectively. The results of Current-Voltage and Kelvin probe force microscope characteristics describe the electrical responses of the Cu2O/ZnO and CuO/ZnO heterojunctions photodiodes. The obtained electrical response depicts the approximately same knee voltages with a measurable difference in the absolute value of net terminal current. More over the present study realizes the all oxide transparent photodiode with zero bias photocurrent. The presented results lay the template for fabricating and analysing the self-bias all oxide transparent photodetector.

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Ultrafast and flexible UV photodetector based on NiO

  • Kim, Hong-sik;Patel, Malkeshkumar;Kim, Hyunki;Kim, Joondong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.389.2-389.2
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    • 2016
  • The flexible solid state device has been widely studied as portable and wearable device applications such as display, sensor and curved circuits. A zero-bias operation without any external power consumption is a highly-demanding feature of semiconductor devices, including optical communication, environment monitoring and digital imaging applications. Moreover, the flexibility of device would give the degree of freedom of transparent electronics. Functional and transparent abrupt p/n junction device has been realized by combining of p-type NiO and n-type ZnO metal oxide semiconductors. The use of a plastic polyethylene terephthalate (PET) film substrate spontaneously allows the flexible feature of the devices. The functional design of p-NiO/n-ZnO metal oxide device provides a high rectifying ratio of 189 to ensure the quality junction quality. This all transparent metal oxide device can be operated without external power supply. The flexible p-NiO/n-ZnO device exhibit substantial photodetection performances of quick response time of $68{\mu}s$. We may suggest an efficient design scheme of flexible and functional metal oxide-based transparent electronics.

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Modeling the clutch energy and clutch life of a heavy duty vehicle

  • Akkurt, Ismail;Anlas, Gunay;Bedir, Hasan
    • Advances in Automotive Engineering
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    • v.1 no.1
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    • pp.21-39
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    • 2018
  • Clutch energy is the thermal energy dissipated on the clutch disc, and it reaches its highest level during drive-off as a result of the difference between the angular speeds of the flywheel and clutch disc, and the torque transmitted. The thermal energy dissipated effects the clutch life. This study presents a new drive-off and thermal model to calculate the clutch energy for a rear wheel driven heavy-duty vehicle and to analyze the effects of clutch energy on temperatures of clutch pressure plate, flywheel and clutch housing. Three different driver profiles are used, based on the release of the clutch pedal in modulation zone: i) the pedal travels with the same speed all the way, ii) the travel speed of the pedal increases, iii) the travel speed of the pedal decreases. Vehicle test is performed to check the accuracy of the model. When compared to a simpler model that is widely used in the literature to calculate the clutch energy, the model used in this study calculates the clutch energy and angular speed behaviors of flywheel and transmission input shaft in better agreement with experimental results. Clutch wear and total clutch life are also estimated using the mean specific friction power.

ITO Nanowires-embedded Transparent Metal-oxide Semiconductor Photoelectric Devices (ITO 나노와이어 기반의 투명 산화물 반도체 광전소자)

  • Kim, Hyunki;Kim, Hong-Sik;Patel, Malkeshkumar;Kim, Joondong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.12
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    • pp.808-812
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    • 2015
  • Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction of p-type NiO and n-type ZnO. A functional template of ITO nanowires (NWs) was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.

NiO-transparent Metal-oxide Semiconductor Photoelectric Devices (NiO 기반의 투명 금속 산화물 반도체 광전소자)

  • Ban, Dong-Kyun;Park, Wang-Hee;Eun, Seong Wan;Kim, Joondong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.6
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    • pp.359-364
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    • 2016
  • NiO serves as a window layer for Si photoelectric devices. Due to the wide energy bandgap of NiO, high optical transparency (over 80%) was achieved and applied for Si photoelectric devices. Due to the high the high mobility, the heterojunction device (Al/n-Si/$SiO_2$/p-NiO/ITO) provide ultimately fast photoresponses of rising time of $38.33{\mu}s$ and falling time of $39.25{\mu}s$, respectively. This functional NiO layer would provide benefits for high-performing photoelectric devices, including photodetectors and solar cells.