• ETRI Journal
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• v.6 no.4
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• pp.37-40
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• 1984

in the case of using SMES to shave the peak load with the isolated synchronous ge nerator- converter, the performance equations are derived. The commutation angle, the power angle, the field current, the storage energy and the power are derived by changing firing angle, that is, following the excitation velocity of SMES current. The output characteristics are computed by digital computer simulation.

• Journal of the Korean institute of surface engineering
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• v.42 no.5
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• pp.191-196
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• 2009

Nanocrystalline Cu thin films were electrodeposited from sulfate baths and investigated systematically the influences of $Cu^{2+}$ concentration and additives on current efficiency, residual stress, surface morphology, and XRD patterns of electrodeposited Cu film. Current efficiency was nearly 100% at from 0.2M to 1.0 M $Cu^{2+}$ concentration. but it was linearly increased with $Cu^{2+}$ concentration at less than 0.2M. The residual stress was observed in range of 7.9 to 18.4 MPa and tensile stress mode. Dendritic and powdered form was obtained at below 0.1 M. As increased with $Cu^{2+}$ concentration in solution, the main peak in the XRD pattern shifted (111) and (220) from (200). In the other hand, all about 100% current efficiency observed in all additive concentration systems, and residual stress observed in range of 20.4 to 26.3 MPa tensile stress. The condition 5(Ultra make-up - 10 ml/l, Ulta A - 0.5ml/l, Ultr B - 0.5 ml/l) was good surface morphology, and fcc(111) peak in XRD patterns increased with increasing additive concentration.

• Journal of Power Electronics
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• v.15 no.6
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• pp.1480-1488
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• 2015

In this paper, a revolutionary buck converter is proposed with soft-switching technology, which is realized by a coupled inductor. Both zero-voltage switching (ZVS) of main switch and zero-current switching (ZCS) of freewheeling diode are achieved at turn on and turn off without using any auxiliary circuits by the resonance between the parasitic capacitor and the coupled inductor. Furthermore, the peak voltages of the main switch and the peak current of the freewheeling diode are significantly reduced by the coupled inductor. As a result, the proposed converter has the advantages of simple circuit, convenient control, low consumption and so on. The detailed operation principles and steady-state analysis of the proposed ZVS-ZCS buck converter are presented, and detailed power loss analysis and some simulation results are also included. Finally, experimental results based on a 200-W prototype are provided to verify the theory and design of the proposed converter.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.1
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• pp.11-19
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• 2007

This paper presents two novel compensation circuits for leakage current and power supply noise (PSN) in phase locked loop (PLL) using a nanometer CMOS technology. The leakage compensation circuit reduces the leakage current of the charge pump circuit which becomes more serious problem due to the thin gate oxide and small threshold voltage in nanometer CMOS technology and the PSN compensation circuit decreases the effect of power supply variation on the output frequency of VCO. The PLL design is based on a 32nm predictive CMOS technology and uses a 0.9V power supply voltage. The simulation results show that the proposed PLL achieves a 88% jitter reduction at 440MHz output frequency compared to the PLL without leakage compensator and its output frequency drift is little to 20% power supply voltage variations. The PLL has an output frequency range of $40M{\sim}725MHz$ with a multiplication range of 11023, and the RMS and peak-to-peak jitter are 5ps and 42.7ps, respectively.

• ETRI Journal
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• v.38 no.2
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• pp.244-251
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• 2016

In this paper, we investigate the electrical characteristics of two trench-gate-type super-barrier rectifiers (TSBRs) under different p-body implantation conditions (low and high). Also, design considerations for the TSBRs are discussed in this paper. The TSBRs' electrical properties depend strongly on their respective p-body implantation conditions. In the case of the TSBR with a low p-body implantation condition, it exhibits MOSFET-like properties, such as a low forward voltage ($V_F$) drop, high reverse leakage current, and a low peak reverse recovery current owing to a majority carrier operation. However, in the case of the TSBR with a high p-body implantation condition, it exhibits pn junction diode.like properties, such as a high $V_F$, low reverse leakage current, and high peak reverse recovery current owing to a minority carrier operation. As a result, the TSBR with a low p-body implantation condition is capable of operating as a MOSFET, and the TSBR with a high p-body implantation condition is capable of operating as either a pn junction diode or a MOSFET, but not both at the same time.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.26 no.7
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• pp.52-58
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• 2012

In this study, we have investigated the effect of the solar power generation facilities on the power quality of interconnected solar power generation system. When the solar power generation facility was connected to the distribution system, whether the solar power generation is under operation or not, Peak factor of current was increased to 0.033[%], Frequency is deviated from $60{\pm}0.2$[Hz] and also Short term flicker indication($P_{st}$) increased to 0.213[p.u.] compare with the disconnected situation. Harmonic current [%] in orders was 11.42[%] maximum under 11th orders and was 7.861[%] between 11th and 17th orders. These values were about 3 or 4 times compared with "the power system interconnection technique standards" at the same situation above. Therefore, we could confirmed that the solar power generation facility, when it was connected to the existing distribution system, made bad influence on the power qualities such as the peak factor of current, frequency regulation, short term flicker indication($P_{st}$) and harmonic current [%] in orders etc.

• Korean Journal of Materials Research
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• v.13 no.12
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• pp.769-774
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• 2003

In this paper, we report on the DC characteristics of the AlGaN/GaN HFETs using physical models on piezoelectric and thermal effects. Employing the models was found to be essential for a realistic prediction of the DC current-voltage characteristics of the AlGaN/GaN HFETs. Though use of the implementation of the physical models, peak drain current, transconductance, pinch-off voltage, and most importantly, the negative slope in the current were accurately predicted. The importance of the heat sink effect was demonstrated by the comparison of the DC characteristics of AlGaN/GaN HFETs fabricated from different substrates including sapphire, Si and SiC. Highest peak current was achieved from the device with SiC by an effective suppression of heat sink effect.

• Journal of Magnetics
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• v.15 no.4
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• pp.204-208
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• 2010

Local wall thinning in pipelines affects the structural integrity of industries like nuclear power plants (NPPs). In the present study, a pulsed eddy current (PEC) differential probe with two excitation coils and two Hall-sensors was fabricated to measure the wall thinning in insulated pipelines. A stainless steel test sample was prepared with a thickness that varied from 1 mm to 5 mm and was laminated by plastic insulation to simulate the pipelines in NPPs. The excitation coils in the probe were driven by a rectangular current pulse, the difference of signals from two Hall-sensors was measured as the resultant PEC signal. The peak value of the detected signal is used to describe the wall thinning. The peak value increased as the thickness of the test sample increased. The results were measured at different insulation thicknesses on the sample. Results show that the differential PEC probe has the potential to detect wall thinning in an insulated NPP pipelines.

• Journal of the Korean institute of surface engineering
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• v.50 no.5
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• pp.398-404
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• 2017

In order to study the AC driving mechanism for OLED lighting, the fluorescent OLEDs were fabricated and the electroluminescent characteristics of the OLEDs by AC forward bias were analyzed. In the case of the driving method of OLED by AC forward bias under the same voltage and the same current density, degradation of luminescent characteristics for elapsed time progressed faster than in the case of the driving method by DC bias. These phenomena were caused by the peak voltage of AC forward bias which is ${\sqrt{2}}$ times higher than the DC voltage. In addition, the degradation of the OLED was accelerated because the AC forward bias had come close to the upper limit of the allowable voltage range even though the peak voltage didn't exceed the allowable range of the OLED. However, the fabricated fluorescent OLED showed little degradation of OLED characteristics due to AC forward bias from 0 V to 6.04 V. Therefore, OLED lighting by AC driving will become commercialized if sufficient luminance is realized at a voltage at which the characteristics of the OLED are not degradation by the AC driving method.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.40 no.8
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• pp.808-815
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• 1991

The behavior of space charge in PE/ionomer blends has been investigated using the thermally stimulated current (TSC) technique. In the blends, at least two TSC peaks over the temperature range from -50 to 100\ulcorner are observed, one at -5 ~ 10\ulcorner (a peak) and the others at above 60\ulcorner (a peak). The a peak is assigned as the orientation of dipoles from the ionomer component. Two a peaks seem to be related to the charge trapping at sites related to the crystalline phases. One a peak is associated with the ionic interfaces and the other with the ethylene chains without the ionic interfaces. The amount of charges stored in PE/Surlyn 1652 blends increases as the poling field increases over the field range of +8 ~ +30 kV/mm, whereas that in PE/Surlyn 1601 blends increases slightly at low poling fields and then decreases at high poling fields above +10 kV/mm. Exact reasons for such a dirrerence are not known at this point.