• International Journal of Advanced Culture Technology
• /
• 제9권2호
• /
• pp.130-135
• /
• 2021

Because of the COVID-19 epidemic, many countries have made the obligation to wear masks normal. Wearing masks in public places has become a must. At present, wearing a mask to participate in sports makes it very common. People seek to gain health through exercise but ignore the potential respirato-ry health threat. That is, wearing a mask will cause a decrease in oxygen content in the body. This neg-ative impact becomes more prominent as the wear-ing time and oxygen consumption increase. To pro-tect people from viruses and enjoy a healthy life. This paper proposes a breathing pattern that im-proves blood oxygen saturation while wearing a jogging mask and walking. Namely, shouting breathing pattern. Use a pulse oximeter to measure the blood oxygen saturation of running at different speeds and compare the normal breathing pattern and the shouting breathing pattern. The results show that the shouting breathing pattern has a sig-nificant improvement in the blood oxygen satura-tion of low-speed walking and medium-speed jog-ging.

• 반도체디스플레이기술학회지
• /
• 제3권2호
• /
• pp.5-9
• /
• 2004

Microcircuit fabrication requires precise control of impurities in tiny regions of the silicon. These regions must be interconnected to create components and VLSI circuits. The patterns to define such regions are created by lithographic processes. In order to image features smaller than 70 nm, it is necessary to employ non-optical technology (or next generation lithography: NGL). One such NGL is extreme ultra-violet lithography (EUVL). EUVL transmits the pattern on the wafer surface after reflecting ultra-violet through mask pattern. If particles exist on the blank mask, it can't transmit the accurate pattern on the wafer and decrease the reflectivity. It is important to care the blank mask. We removed the particles on the wafer using focused ion beam (FIB). During removal, FIB beam caused damage the multi layer mask and it decreased the reflectivity. The relationship between particle removal and reflectivity is examined: i) transmission electron microscope (TEM) observation after particle removal, ii) reflectivity simulation. It is found that the image mode of FIB is more effective for particle removal than spot and bar mode.

• 전자공학회논문지D
• /
• 제34D권12호
• /
• pp.62-67
• /
• 1997

The optical lithography wit an ArF excimer laser as a light source is expected to be used in the mass production of giga-bit DRAMs which require less than 0.2.mu.m minimum feature size. In this case, the distortion of a patterned image becomes very severe, since the lithography porcess is performed at the resolution limit. Traditionally, the photomask pattern was designed and revised with trial-and-error methods, such as repeated execution of process simulators or actual process experiments which require time and effort. Ths paper describes a program which automatically finds an optimal mask pattern. The program divides the mask plane into cells with same sizes, chooses a cell randomly, changes the transparent/opaque property of the cell, and eventually genrates a mask pattern which produces required image pattern. The program was applied to real DRAM cell patterns to produce mask patterns which genertes image patterns closer to object images than original mask patterns.

• 한국컴퓨터정보학회논문지
• /
• 제27권10호
• /
• pp.185-193
• /
• 2022

본 연구는 성인 여성의 얼굴 유형에 적합한 마스크 패턴 개발을 위하여 시판되고 있는 다회용 마스크 패턴을 비교·분석하고자 하였다. 이를 통해 마스크 패턴 개발 및 생산업체에 필요한 자료를 제공하고자 하였다. 시판 다회용 마스크 패턴의 치수 및 형태를 비교한 결과, 성인용으로 제작된 L사이즈 마스크임에도 불구하고 치수에 있어서 큰 차이를 나타냈다. 가상착의에 대한 외관평가 결과 정면의 앞중심선의 수직, 마스크의 윗부분 감쌈과 여유, 코높이, 마스크 아랫부분의 감쌈과 여유에서 디자인별로 유의미한 차이가 있었다. 측면도 얼굴 옆부분의 감쌈, 옆부분의 여유, 끈 간격과 길이에서 유의미한 차이를 나타냈다. 외관평가 결과, 마스크4가 가장 좋은 평가를 받았다. 마스크 패턴의 형태는 코 아랫부분에 크게 다트가 있어 얼굴의 입체적인 형태를 커버할 수 있도록 되어 있으나 마스크에 따라 곡선의 정도와 각도에 차이를 나타냈다. 마스크 상부와 마스크 하부, 볼 부분은 밀착되지만, 코와 입 부분에는 여유가 있는 마스크 패턴의 평가가 높았다. 마스크 패턴은 얼굴형 및 치수에 대한 분석을 통해 마스크 상부길이와 하부길이, 코 높이에 따른 마스크 다트량의 설정이 이루어져야 할 것으로 생각된다.

• 산업공학
• /
• 제11권2호
• /
• pp.107-117
• /
• 1998

This paper presents a useful method of registration in manufacturing of shadow color mask for cathode ray tubes of the FTM (Flat Tension Mask) type, wherein the shadow mask and front panel are interchangeable when mask-panels are assembled, which is called ICM system. Theoretical analysis and alignment process are presented. The pattern of mask aperture is registered with a screen pattern of corresponding geometry of the panel in flat tension mask tube. Registration accuracy of panel and mask affects the purity of color cathode ray tube concerned with mislanding. It tries to minimize the misregistration caused by variances, which are mechanical error, mask stretching position error, restrictive number of fiducial point, etc.

• 전자공학회논문지 IE
• /
• 제48권2호
• /
• pp.1-5
• /
• 2011

HVPE법으로 $3{\mu}m$의 GaN epi를 성장하고 이 위에 DC 마그네트론 Sputter를 이용하여 Ti stripe 패턴 형성하였으며 다시 HVPE를 이용하여 $120{\mu}m$ ~ $300{\mu}m$ 두께의 GaN를 overgrowth하였다. 성장된 GaN는 SEM 측정으로 Ti 패턴한 부분에서 void가 관찰되었고 보다 두꺼운 GaN를 성장시에는 크랙이 void를 따라 발생할 수 있음을 확인하였으며 XRD측정으로 FWHM은 188 arcsec로 측정되었다. 성장전의 GaN epi와의 반치폭을 비교하였을 때 패턴에 사용된 Ti는 overgrowth시 결정성에는 크게 영향을 주지 않는다는 것을 확인하였다.

• 반도체디스플레이기술학회지
• /
• 제9권4호
• /
• pp.13-18
• /
• 2010

Extreme ultraviolet (EUV) lithography using 13.5 nm wavelengths is expected to be adopted as a mass production technology for 32 nm half pitch and below. One of the new issues introduced by EUV lithography is the shadowing effect. Mask shadowing is a unique phenomenon caused by using mirror-based mask with an oblique incident angle of light. This results in a horizontal-vertical (H-V) biasing effect and ellipticity in the contact hole pattern. To minimize the shadowing effect, a refilled mask is an available option. The concept of refilled mask structure can be implemented by partial etching into the multilayer and then refilling the trench with an absorber material. The simulations were carried out to confirm the possibility of application of refilled mask in 32 nm line-and-space pattern under the condition of preproduction tool. The effect of sidewall angle in refilled mask is evaluated on image contrast and critical dimension (CD) on the wafer. We also simulated the effect of refilled absorber thickness on aerial image, H-V CD bias, and overlapping process window. Finally, we concluded that the refilled absorber thickness for minimizing shadowing effect should be thinner than etched depth.

• Macromolecular Research
• /
• 제13권5호
• /
• pp.435-440
• /
• 2005

This study describes a method where the match of two different length scales, i.e., the patterns from self-assembled block copolymer (<50 nm) and electron beam writing (>50 nm), allow the nanometer scale pattern mask. The method is based on using block copolymers containing a poly(methyl methacrylate) (PMMA) block, which is subject to be decomposed under an electron beam, as a pattern resist for electron beam lithography. Electron beam on self assembled block copolymer thin film selectively etches PMMA microdomains, giving rise to a polymeric nano-pattern mask on which subsequent evaporation of chromium produces the arrays of Cr nanoparticles followed by lifting off the mask. Furthermore, electron beam lithography was performed on the micropatterned block copolymer film fabricated by micro-imprinting, leading to a hierarchical self assembled pattern where a broad range of length scales was effectively assembled, ranging from several tens of nanometers, through submicrons, to a few microns.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.183-183
• /
• 2012

In the era of 45 nm or beyond technology, conventional etch mask using photoresist showed its limitation of etch mask pattern collapse as well as pattern erosion, thus hard mask in etching became necessary for precise control of etch pattern geometry. Currently available hard mask materials are amorphous carbon and polymetric materials spin-on containing carbon or silicon. Amorphous carbon layer (ACL) deposited by PECVD for etch hard mask has appeared in manufacturing, but spin-on carbon (SOC) was also suggested to alleviate concerns of particle, throughput, and cost of ownership (COO) [1]. SOC provides some benefits of reduced process steps, but it also faced with wiggling on a sidewall profile. Diamond like carbon (DLC) was also evaluated for substituting ACL, but etching selectivity of ACL was better than DLC although DLC has superior optical property [2]. Developing a novel material for pattern hard mask is very important in material research, but it is also worthwhile eliminating a potential issue to continuously develop currently existing technology. In this paper, we investigated in-situ dry-cleaning (ISD) monitoring of ACL coated process chamber. End time detection of chamber cleaning not only provides a confidence that the process chamber is being cleaned, but also contributes to minimize wait time waste (WOW). Employing Challenger 300ST, a 300mm ACL PECVD manufactured by TES, a series of experimental chamber cleaning runs was performed after several deposition processes in the deposited film thickness of $2000{\AA}$ and $5000{\AA}$. Ar Actinometry and principle component analysis (PCA) were applied to derive integrated and intuitive trace signal, and the result showed that previously operated cleaning run time can be reduced by more than 20% by employing real-time monitoring in ISD process.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1999년도 하계학술대회 논문집 G
• /
• pp.3010-3011
• /
• 1999

컴퓨터 모니터용 Color Display Tube (CDT)와 TV수상기용 Color Picture에 모두 사용되는 부품인 shadow mask는 전자총에서 발생된 전자빔이 Screen에 이르기 바로 전에 위치함으로써 화질에 지대한 영향을 미친다. 이러한 shadow mask의 제작 기술은 발전을 거듭하여 현재는 한 쌍의 working pattern을 사용하여 생산하는 방식이 사용되고 있다. 본 논문에서는 를 고정밀 하고 고정시키는 자동 장비의 개발 사례를 소개 한다.